Académique Documents
Professionnel Documents
Culture Documents
RA08H1317M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
BLOCK DIAGRAM
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module 2 3
for 12.5-volt portable/ mobile radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
1 4
voltage (V GG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power 5
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with 1 RF Input (Pin)
the input power.
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
FEATURES
• Enhancement-Mode MOSFET Transistors 4 RF Output (Pout)
(IDD≅0 @ VDD=12.5V, VGG=0V) 5 RF Ground (Case)
• Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW
• ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
All parameters, conditions, ratings, and limits are subject to change without noti ce.
10 100
TOTAL EFFICIENCY
8 η T @Pout=8W 80
6 60
ηT(%)
VDD=12.5V
4 Pin=20mW
40
ρ in @Pout=8W
2 20
0 0
130 140 150 160 170 180
FREQUENCY f(MHz)
Now Preparing
Now Preparing
30.0 ±0.2
10.0 ±0.2
6.0 ±0.2
6.0 ±0.2
7.4 ±0.2
1 2 3 4
6.0 ±1
3.0 ±0.2
Ø0.45 ±0.15
6.1 ±1
13.7 ±1
18.8 ±1
23.9 ±1
3.5 ±0.2
(5.4)
2.3 ±0.4
1.5 ±0.2
1 RF Input (P in)
2 Gate Voltage (V GG)
3 Drain Voltage (V DD)
4 RF Output (P out)
5 RF Ground (Case)
ZG=50Ω ZL=50Ω
Signal Pre- Directional Directional Power
Attenuator Attenuator Attenuator
Generator amplifier Coupler Coupler Meter
C1 C2
- + + -
DC Power DC Power
C1, C2: 4700pF, 22uF in parallel Supply V GG Supply V DD
1 RF Input (P in)
2 Gate Voltage (V GG)
3 Drain Voltage (V DD)
4 RF Output (P out)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
2 3
1 4
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=8W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (P out / ηT ) - Pout +
Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (8W/40% – 8W + 0.02W) = 2.50 °C/W
When mounting the module with the thermal resistance of 2.50 °C/W, the channel temperature of each stage transistor
is:
Tch1 = Tair + 39.1 °C
Tch2 = Tair + 54.0 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the pos sibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such
as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any
malfunction or mishap.
JAPAN: GERMANY:
Mitsubishi Electric Corporation Mitsubishi Electric Europe B.V.
Semiconductor Sales Promotion Department Semiconductor
2-2-3 Marunouchi, Chiyoda-ku Gothaer Strasse 8
Tokyo, Japan 100 D-40880 Ratingen, Germany
Email: sod.sophp@hq.melco.co.jp Email: semis.info@meg.mee.com
Phone: +81-3-3218-4854 Phone: +49-2102-486-0
Fax: +81-3-3218-4861 Fax: +49-2102-486-3670
SINGAPORE: ITALY:
Mitsubishi Electric Asia PTE Ltd Mitsubishi Electric Europe B.V.
Semiconductor Division Semiconductor
307 Alexandra Road Centro Direzionale Colleoni,
#3-01/02 Mitsubishi Electric Building, Palazzo Perseo 2, Via Paracelso
Singapore 159943 I-20041 Agrate Brianza, Milano, Italy
Email: semicon@asia.meap.com Email: semis.info@meg.mee.com
Phone: +65 64 732 308 Phone: +39-039-6053-10
Fax: +65 64 738 984 Fax: +39-039-6053-212
TAIWAN: U.K.:
Mitsubishi Electric Taiwan Company, Ltd., Mitsubishi Electric Europe B.V.
Semiconductor Department Semiconductor
9F, No. 88, Sec. 6 Travellers Lane, Hatfield
Chung Shan N. Road Hertfordshire, AL10 8XB, England
Taipei, Taiwan, R.O.C. Email: semis.info@meuk.mee.com
Email: metwnssi@metwn.meap.com Phone: +44-1707-278-900
Phone: +886-2-2836-5288 Fax: +44-1707-278-837
Fax: +886-2-2833-9793
U.S.A.: AUSTRALIA:
Mitsubishi Electric & Electronics USA, Inc. Mitsubishi Electric Australia,
Electronic Device Group Semiconductor Division
1050 East Arques Avenue 348 Victoria Road
Sunnyvale, CA 94085 Rydalmere, NSW 2116
Email: customerservice@edg.mea.com Sydney, Australia
Phone: 408-730-5900 Email: semis@meaust.meap.com
Fax: 408-737-1129 Phone: +61 2 9684-7210
+61 2 9684 7212
+61 2 9684 7214
CANADA: +61 3 9262 9898
Mitsubishi Electric Sales Canada, Inc. Fax: +61 2 9684-7208
4299 14th Avenue +61 2 9684 7245
Markham, Ontario, Canada L3R OJ2
Phone: 905-475-7728
Fax: 905-475-1918