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Door module } Low VF (MEGA) Schottky rectifier } Low VCEsat (BISS) transistors } Small-signal MOSFETs } General-purpose transistors } ESD protection diodes
ABS module } Low VF (MEGA) Schottky rectifier } Low VCEsat (BISS) transistors } ESD protection diodes Automotive networking }E SD protection diodes e.g. MMBZ and PESDXCAN-series
Automotive power } TVS diodes } Low VF (MEGA) Schottky diodes } Low VCEsat (BISS) transistors Daylight beam } Low VF (MEGA) Schottky rectifier } Wide range of automotive grade Power MOSFETs: - Steering - Braking / stability - Body control - Engine management - Fan control - Transmission - Water pump
As automotive manufacturers strive for convenient body applications, new safety systems, infotainment systems, and efficient powertrain solutions, the semiconductor content of vehicles is rising and electronic systems are becoming more complex. Consequently, semiconductor suppliers must meet increasingly severe requirements.
Benefit from our experience NXP is the global leader in automotive MOSFETs and a global supplier of small-signal discretes with more than 50 years experience in developing and producing diodes and transistors.
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Automotive trend
More electronics, more power, lower losses
Low VF (MEGA) Schottkys, low VCEsat (BISS) transistors, power and small-signal MOSFETs medium power capability in smallest packages, low power consumption ESD protection portfolio, 1-18 lines, High ESD robustness up to 30 kV, dedicated automotive bus protection Continuous certification program, zero defects breakthrough program, robust, mature technologies and processes
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Focus on cost
Integration of functions
Broad range of integrated products: diode arrays, double transistors matched pair transistors, Resistor-equipped transistors (RETs), low VCEsat (BISS) loadswitches
Package innovations
FlatPower packages
NXPs new FlatPower packages with clip-bond technology meet the demand for thinner products with high power capabilities. Today a range of 28 medium-power, low VF rectifiers and 70 TVS diodes are housed in new SOD123W and SOD128. They offer high power ratings similar to standard SMA/SMB packages but occupy only half of the PCB area.
Package size } Very flat and small packages - SOD128 (3.8 x 2.5 x 1.0 mm) - SOD123W (2.6 x 1.7 x 1.0 mm) Key benefits }H ighest values for surge and power capability due to clip-bond technology } Low height for economic use of space } AEC-Q101 qualified }P ad layout compatible with SMA and SMB for easy drop-in replacement } Minimized outline and reflow soldering footprint }N on-flammability classification UL 94V-0 and RoHS standards compliance (Dark Green) Key applications of TVS diodes } Power supplies / power management } Surge protection } Free wheeling diode for relay coil Key applications of Schottky rectifiers } Power management circuits, especially DC/DC converters } Reverse polarity protection } Free-wheeling diodes for inductive loads in motors and relays
Leadless packages
We offer a very broad range of discrete functions in various leadless packages. Functions include ESD protection, Zener, Switching, and Schottky diodes, low VCEsat (BISS), Resistor-Equipped Transistors (RETs), MOSFET solutions.
Key features and benefits } Broad portfolio, supports all kinds of applications } From 2 pin to 6 pin options } Reduced size enables higher integration for smaller designs }F rom very small (SOD882D: 1 x 0.6 x 0.37) to medium-power packages with P tot = 1 W (SOT1061 and SOT1118: 2.0 x 2.0 x 0.65) } Broad portfolio with AEC-Q101 qualification } Non-flammability classification UL 94V-0 and RoHS standards compliance (Dark Green) } SOD882D with solderable side pads for improved optical inspection (AOI)
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LFPAK
LFPAK (SOT669) for high-density applications NXP MOSFETs housed in the compact, thermally-enhanced Loss Free PAcKage (LFPAK) are optimized for high-density automotive applications. LFPAK delivers the ultimate combination with ultra-low package resistance, superior reliability and thermal performance. All this in a very small package that ensures you can put power where you need it most, anywhere in the car. In automotive systems space is becoming a key issue, especially under the hood. Todays MOSFETs need to provide the absolute best thermal performance possible to enable switching of loads requiring significant currents. In answer to this, NXP has introduced the LFPAK to ensure a superior level of on-resistance and thermal performance in an extremely compact housing. The combination of NXPs TrenchMOS technology and LFPAK delivers compact power to many applications that previously were limited to only large discrete power packages. The LFPAKs copper source clip design overcomes the limitations of the standard SO8, resulting in thermal resistances comparable to that of bigger packages such as DPAK. In a traditional power package the main thermal pathway is vertically down through the mounting and into the PCB. However, the LFPAK also conducts a significant amount of heat upwards and out through the source lead. Fully qualified to meet the rigorous demands of the AEC-Q101 standard for discrete devices, these new products are aimed at a variety of applications where size, thermal performance and low cost manufacturing processes are critical design considerations. Key benefits } Low inductance } Low thermal resistance } Dimensions comparable to SO8 } Significantly thinner than SO8 & DPAK } Wirebond free - Cu clip design } High current transient robustness } Avalanche Robust up to Tj(max) } 100% avalanche tested } Automotive AEC-Q101 qualified to 175 C } Leads are optical-inspection friendly Target applications for LFPAK products } Engine and transmission controllers } Advanced braking systems } Coolant pumps } DC-DC converters } Reverse battery protection } General-purpose automotive switching where space is at a premium Comparison between typical wirebonds and clip design Package LFPAK DPAK*
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PCB area reduced by more than 45% LFPAK case temperature is significantly lower than two SO8 packages, and similar to single DPAK (1 W power dissipation on all three packages)
Power MOSFETs
NXP offers a highly flexible approach to power design for automotive systems. NXP is a global leader in the area of discrete power MOSFETs for automotive systems. An in-depth understanding of automotive applications means NXP can deliver power semiconductor solutions from its wide range of standard products or its capability to create unique custom offerings to meet customer specific requirements.
Features and benefits AEC Q101 compliant Low conduction losses due to very low on-state resistance Suitable for logic and standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating
Applications 12 V automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power steering Motors, lamps and solenoids Transmission control
Small-signal MOSFETs
Our advanced MOSFET solutions deliver the flexibility and performance that todays market demands. Choose from a wide range of general-purpose MOSFET solutions: The N- and P-channel enhancement mode Field-Effect Transistors (FET) are using Trench MOSFET technology and are offered in various small SMD packages - from SOT23 down to the very small SOT883 (1 x 0.6 x 0.5 mm).
Key features and benefits } AEC-Q101 qualified } Logic-level compatible } Trench MOSFET technology } Including types with ESD protection up to 3 kV } Very fast switching Applications } High-speed line driver } High/Low-side load switch e.g. motion control } Relay driver } Switching circuits } Fuel injection
LIN
The PESD1LIN offers best-in-class ESD protection of one LIN bus line. The asymmetrical diode configuration ensures optimized electromagnetic immunity of LIN transceivers.
Key features PESD1LIN Bidirectional protection of one LIN bus line in a very small SOD323 (SC-76) SMD plastic package Max. peak pulse power: PPP = 160 W at tp = 8/20 s Low clamping voltage: V(CL)R = 40 V at IPP = 1 A Ultra low leakage current: IRM < 1 nA ESD protection of up to 23 kV
CMASTER/SLAVE
Power Application (e.g. electro motor, inductive loads) Application (e.g. voltage regulator and microcontroller)
LIN Transceiver
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CAN
PESD1CAN and PESD2CAN provide bidirectional protection of two CAN bus lines with one single SOT23 component. They can be used for both high speed and fault-tolerant CAN bus protection.
Key features PESD1CAN Bidirectional protection of two CAN bus lines in one small SOT23 package Very low capacitance CD = 11 pF ESD protection of up to 23 kV Key features PESD2CAN Bidirectional protection of two CAN bus lines in one small SOT23 package Max. peak pulse power: PPP = 230 W at tp = 8/20 s Low clamping voltage: V(CL)R = 34 V at Ipp = 1 A ESD protection of up to 30 kV
SPLIT CANH CAN BUS TRANSCEIVER CANL
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CAN bus
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PESD1CAN PESD2CAN
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FlexRay
PESD1FLEX protects advanced FlexRay system solutions supporting the high data rate of 10 Mbits/s.
Key features PESD1FLEX Bidirectional protection of two FlexRay bus lines in one small SOT23 package Very low capacitance CD = 11 pF at VR = 0 V, f = 5 MHz Ultra low leakage current: IRM < 1 nA ESD protection of up to 23 kV
3 BM FlexRay TRANSCEIVER BP
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MMBZ series
These device offer single line bidirectional or dual-line unidirectional transient overvoltage protection in a small SOT23 package.
Key features Common cathode or common anode configuration Max. peak pulse power: Ppp = 40 W at tp = 10/1000 s Ultra-low leakage current: IRM < 1 nA ESD protection of up 30 kV Example MMBZ series application
TVS diodes
Housed in very flat SOD128 or SOD123W packages, these Transient Voltage Suppressor (TVS) diodes save board space while guaranteeing industry-leading surge protection up to 600 W.
Key features and benefits } High Power rating: 400/600 W peak pulse } Small plastic packages SOT23/SOD123W/SOD128 } Very high surge/PCB area ratio }V ery low reverse leakage current (down to 1 A typical) } Dark Green packages free of halogens and antimony oxides } AEC-Q101 qualified Key applications } Power supplies / power management } Surge protection } Free wheeling diode for relay coil
CONTROLLER
MSD923
DC/DC converter
Key features Reduced thermal and electrical resistance Low collector-emitter saturation voltage VCEsat down to 30 mV Up to 8 A collector current capability IC Up to 20 A peak collector current ICM High current gain hFE - even at high IC High performance/board space ratio AEC-Q101 qualified portfolio
Key benefits Less heat generation, higher circuit efficiency Solution for high ambient temperature applications Cost effective replacement of medium power transistors Increased performance from small-signal discrete footprints
Key applications Applications in temperature critical environments, e.g. in engine or dashboard mounted components) High- and low-side switches, e.g. in control units Medium power DC/DC conversion Drivers in low supply voltage applications such as fans and motors Inductive load drivers, e.g. relays, buzzers MOSFET drivers
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High-side switch
Key benefits Lower handling and inventory costs Reduced board space Shorter assembly times and reduced pick-and-place efforts Simpler design process Increased system reliability due to fewer soldering joints
Key applications Digital applications Switching loads, e.g. for instrument clusters Controlling IC inputs, e.g. in engine control units
Standard Linear
NXPs portfolio of standard linear devices includes precision shunt-, and linear low drop-out voltage regulators. The TL431 three-terminal shunt regulator family with an output voltage range between Vref = 2.5 V and 36 V, is to be set by two external resistors.
Key features } Programmable output voltage from 2.5 V to 36 V 3 different voltage tolerances down to 0.5% Typical output impedance of only 0.2 AEC-Q100 (Grade 1) qualified Key applications Shunt regulator for a wide voltage range Precision current limiter Precision constant current sink
Key benefits Any output voltage in the given range can be set by just two external resistors Simple solution to achieve a stabilized voltage 3 versions: extra EMI ruggedness, enhanced stability area, and standard version Active output circuit for low temperature drift Low output noise
NXPs portfolio extension in 2011 includes TLVH431, shunt regulator in SOT23 with Vin = 20 V max and VREF = 1.24 V. Voltage regulators in SOT223: NX1117 with max output current of 1A, adjustable from 1.25 V up to 18 V and several fixed output voltage versions 1.2 - 12 V as well as the new automotive LDO NXV426x series.
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www.nxp.com
2010 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: November 2010 Document order number: 9397 750 17007 Printed in the Netherlands