IRAM630-1562F

Intelligent Power Module for Energy Efficient Compressor Applications

15A, 600V IPM

with Integrated PFC and Open Emitter Pins

Description
International Rectifier's IRAM630-1562F is a 15A, 600V PFC+Inverter Intelligent Power Module (IPM) with Open Emitter pins specifically designed for energy efficient Air Conditioners application. IR's technology offers an extremely compact, high performance compressor motor-driver with both PFC and Inverter stage in a single isolated package to simplify design. This advanced IPM is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark 3 phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A built-in high precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a Single in line package with full transfer mold structure and CTI>600 minimizes PCB space and resolves isolation problems to heatsink.

Features
Integrated boost PFC power stage and gate driver Integrated gate drivers and bootstrap circuits Temperature monitor Protection shutdown pin Low VCE (on) Trench IGBT technology Undervoltage lockout for all channels Matched propagation delay for all channels 3.3V Schmitt-triggered input logic Cross-conduction prevention logic Motor Power range up to 2kW / 85~253 Vac Isolation 2000VRMS min and CTI> 600 RoHS Compliant Recognized by UL (File Number: E252584)

Absolute Maximum Ratings

VCES / VRRM VAC V+ Iin @ TC=25C Iin @ TC=100C Ipk_PFC Fp_PFC Pd_PFC IGBT/ FW Diode Blocking Voltage AC Input Voltage Positive Bus Voltage PFC RMS Current at FPWM=20kHz PFC RMS Current at FPWM=20kHz PFC Maximum Peak Phase Current (Note 1) PFC Maximum PWM Carrier Frequency PFC Maximum Power dissipation per IGBT @ TC =25C 600 253 450 20 10 30 20 62 kHz W A V VRMS V

Note 1: tP<100ms, VCC=15V, TC=25C, FPWM=20kHz.

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IRAM630-1562F
Internal Electrical Schematic IRAM630-1562F
V+ (16)

D8

Q1

D1

Q2

D2

Q3

D3

PFC (1)
Q7 D7 Q4 D4 Q5 D5 Q6 D6

V- (19) VRU (22) VRV (21) VRW (20)

R7 R1

VB1 (12) U, VS1 (13) VB2 (8) V, VS2 (9) VB3 (4) W, VS3 (5)

C1

R2

R3

C2

C3

R4

R5

R6

VB2 HO2 VS2 VS1 HO1

VB3 HO3 VS3

VCC LO1 LO2 LO3 COM

HIN1 (23) HIN2 (24) HIN3 (25) LIN1 (26) LIN2 (27) LIN3 (28)

VB1 Driver IC

VDC GF VSDC

ITRIP VSS PFCOUT

PFCIN RCIN

HIN1

HIN2

HIN3

PFCIN (29) FLT/EN (30) PFCTRIP (31) ITRIP (32) TH (33) VCC (34) VSS (35)
C4 R9 R8

F/EN

LIN1

LIN2

LIN3

PFC TRIP

C5

C7

C6

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IRAM630-1562F
TJ (IGBT & Diode & IC) TC TSTG Maximum Operating Junction Temperature Operating Case Temperature Range Storage Temperature Range +150 -20 to +100 -40 to +125 Nm C

T Mounting torque Range (M3 screw) 0.8 to 1.0 Note 1: tP<100ms, VCC=15V, TC=25C, FPWM=20kHz. Note 2: Sinusoidal Modulation at V+=400V, VCC=15V, TJ=150C, MI=0.8, PF=0.6, See Figure 4. Note 3: tP<100ms, VCC=15V, TC=25C, FPWM=6kHz.

Absolute Maximum Ratings (Continued)

Symbol VS1,2,3 VB1,2,3 VCC VIN Parameter High side floating supply offset voltage High side floating supply voltage Low Side and logic fixed supply voltage Input voltage LIN, HIN, PFCIN, ITrip, FLT/EN PFCTRIP input voltage Min VB1,2,3 - 20 -0.3 -0.3 -0.3 Max VB1,2,3 +0.3 600 20 Lower of (VSS+15V) or VCC+0.3V Lower of (VSS+15V) or VCC+0.3V Units Conditions V V V V

VPFCTRIP

-2

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IRAM630-1562F
PFC Section Electrical Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. Symbol V(BR)CES V(BR)CES / T VCE(ON) ICES VFM VFM Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current Diode D8 Forward Voltage Drop Diode D7 Forward Voltage Drop Min 600 ---------------Typ --0.3 1.15 1.25 10 100 1.75 1.25 1.95 Max ----1.4 --150 --2.2 ----Units Conditions V V/C V A V V VIN=0V, IC=250A VIN=0V, IC=1mA (25C - 150C) IC=10A, TJ=25C IC=10A, TJ=150C VIN=0V, V+=600V VIN=0V, V+=600V, TJ=150C IF=10A IF=10A, TJ=150C IF=3.5A

PFC Section Switching Characteristics

VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. Symbol EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG RBSOA SCSOA Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-on Switching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On IGBT Gate Charge Reverse Bias Safe Operating Area Short Circuit Safe Operating Area 2 Min ----------------------Typ 540 220 760 15 140 930 310 1240 75 180 95 Max 700 350 1050 35 ------------140 ns nC J ns J Units Conditions IC=10A, V+=400V VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 IC=10A, V+=400V VCC=15V, L=1.2mH, TJ=150C Energy losses include "tail" and diode reverse recovery See CT1 IC=48A, V+=400V, VGE=15V TJ=150C, IC=40A, VP=600V V+= 450V, VGE=+15V to 0V TJ=150C, V+= 360V, VGE=+15V to 0V See CT3

FULL SQUARE ----s

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IRAM630-1562F
Inverter Section Electrical Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. Symbol V(BR)CES V(BR)CES / T VCE(ON) ICES VFM C1,2,3,4 C6,7 Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current Diode Forward Voltage Drop VCC / VBS Capacitor Value Itrip / PFCtrip Capacitor Value Min 600 -----------------Typ --0.3 1.5 1.7 5 80 1.8 1.45 47 1 Max ----1.7 --80 --2.35 ------Units Conditions V V/C V A V nF nF VIN=0V, IC=250A VIN=0V, IC=250A (25C - 150C) IC=5A, TJ=25C IC=5A, TJ=150C VIN=0V, V+=600V VIN=0V, V+=600V, TJ=150C IF=5A IF=5A, TJ=150C TJ=25C TJ=25C

Inverter Section Switching Characteristics

VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. Symbol EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG RBSOA SCSOA Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-on Switching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On IGBT Gate Charge Reverse Bias Safe Operating Area Short Circuit Safe Operating Area 2 Min ----------------------Typ 220 85 305 15 115 320 115 435 50 160 19 FULL SQUARE ----s Max 350 140 490 35 ------------29 ns nC J ns J Units Conditions IC=5A, V+=400V VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 IC=5A, V+=400V VCC=15V, L=1.2mH, TJ=150C Energy losses include "tail" and diode reverse recovery See CT1 IC=8A, V+=400V, VGE=15V TJ=150C, IC=5A, VP=600V V+= 450V, VCC=+15V to 0V TJ=150C, V+= 360V, VGE=+17.5V to 0V See CT3

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IRAM630-1562F
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential (Note 4) Symbol VB1,2,3 VS1,2,3 VCC VIN VPFCTRIP HIN Deadtime Definition High side floating supply voltage High side floating supply offset voltage Low side and logic fixed supply voltage Logic input voltage LIN, HIN, PFCIN, ITrip, FLT/EN PFCTRIP input voltage High side PWM pulse width External dead time between HIN and LIN Min VS+12.5 Note 5 13.5 0 -2 1 1 Typ VS+15 --15 --------Max VS+17.5 450 16.5 5 0 ----Units V V V V V s s

Note 4: For more details, see IRS26302D data sheet Note 5: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details)

Static Electrical Characteristics Driver Function

VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 4) Symbol VIN,th+ VIN,thVCCUV+, VBSUV+ VCCUV-, VBSUVVCCUVH, VBSUVH V(ITRIP) V(ITRIP, HYS) V(PFCTRIP) IQBS IQCC ILK IIN+ IINITRIP+ ITRIPPFCTRIP+ PFCTRIPRon_FLT RBS Definition Positive going input threshold for LIN, HIN, PFCIN, FLT/EN Negative going input threshold for LIN, HIN, PFCIN, FLT/EN VCC/VBS supply undervoltage, Positive going threshold VCC/VBS supply undervoltage, Negative going threshold VCC and VBS supply undervoltage lock-out hysteresis ITRIP threshold Voltage ITRIP Input Hysteresis PFCTRIP threshold Voltage Quiescent VBS supply current Quiescent VCC supply current Offset Supply Leakage Current Input bias current VIN=3.3V for LIN, HIN, PFCIN, FLT/EN Input bias current VIN=0V for LIN, HIN, PFCIN, FLT/EN ITRIP bias current VT/ITRIP=3.3V ITRIP bias current VT/ITRIP=0V PFC ITRIP bias current VPFC_ITRIP=-250mV PFC ITRIP bias current VPFC_ITRIP=0V Fault low on resistance Internal bootstrap FET on resistance Min 2.5 --10.2 10 --0.4 ---0.16 --------350 -------------Typ ----11.1 10.9 0.2 0.5 0.05 -0.2 0.02 -------0 1 0 20 0 50 200 Max --0.8 12 11.8 --0.6 ---0.24 --120 4 50 860 1 2 5 --5 100 400 Units V V V V V V V V V A mA A A A A A A A

V(PFCTRIP, HYS) PFCTRIP Input Hysteresis

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IRAM630-1562F
Dynamic Electrical Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25C, unless otherwise specified. Driver only timing unless otherwise specified. Symbol TON TOFF TFILIN TFILEN TEN TFLT TBLT-ITRIP TITRIP TPFCTRIP DT MT TFLT-CLR Parameter Input to Output propagation turnon delay time (see fig.11) Input to Output propagation turnoff delay time (see fig. 11) Input filter time (HIN,LIN,PFC,EN) Input filter time (FLT/EN) EN low to six switch turn-off propagation delay (see fig. 3) ITRIP to Fault propagation delay ITRIP Blanking Time ITRIP to six switch turn-off propagation delay (see fig. 2) PFCTRIP to switch turn-off propagation delay (see fig. 2) Internal Dead Time injected by driver Matching Propagation Delay Time (On & Off) all channels Post ITRIP to six switch turn-off clear time (see fig. 2) Min ----200 100 ----------190 --1.17 --Typ ----350 200 --800 500 ----290 --1.7 1.5 Max 1.15 1.15 ----1.15 ----1.5 1.5 420 50 2.19 --Units Conditions s IC=5A, V+=400V s ns ns s ns ns s s ns ns ms VIN=0 or VIN=3.3V VIN=0 or VIN=5V VIN=0 or VIN=3.3V, VEN=0 VIN=0 or VIN=3.3V, VITRIP=3.3V VIN=0 or VIN=3.3V, VITRIP=3.3V IC=5A, V+=400V IC=10A, V+=400V VIN=0 or VIN=3.3V External dead time> 400ns TC = 25C TC = 100C

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IRAM630-1562F
Thermal and Mechanical Characteristics
Symbol Rth(J-C) Rth(J-C) Rth(J-C) Rth(J-C) Rth(C-S) CTI Parameter Thermal resistance, PFC IGBT Thermal resistance, PFC Diode Thermal resistance, per IGBT Thermal resistance, per Diode Thermal resistance, C-S Comparative Tracking Index Min ----------600 Typ 1.6 3.0 3.8 5.8 0.1 --Max 2.0 3.6 4.6 6.9 ----V Inverter Operating Condition Flat, greased surface. Heatsink C/W compound thermal conductivity 1W/mK Units Conditions

Internal NTC - Thermistor Characteristics

Parameter R25 R125 B Definition Resistance Resistance B-constant (25-50C) Min 44.65 1.27 3989 -40 --Typ 47 1.41 4050 --1 Max 49.35 1.56 4111 125 --Units Conditions k k k C mW/C TC = 25C TC = 25C TC = 125C R2 = R1e [B(1/T2 - 1/T1)]

Temperature Range Typ. Dissipation constant

Input-Output Logic Level Table

V+

FLT/EN
HIN1,2,3 (20,22,23) LIN1,2,3 (24,25,26) IC Driver Lo Ho U,V,W (10,6,2)

ITRIP 0 0 0 0 1 X

HIN1,2,3 1 0 0 1 X X

LIN1,2,3 0 1 0 1 X X

U,V,W V+ 0 Off Off Off Off

1 1 1 1 1 0

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IRAM630-1562F
HIN1,2,3 LIN1,2,3 ITRIP
U,V,W

Figure 1. Input/Output Timing Diagram

HIN1,2,3 LIN1,2,3

ITRIP

50%

50%

TFLT
FLT
50%

U,V,W

50%

50%

TITRIP

TFLT-CLR

Figure 2. ITRIP Timing Waveform

EN

50%

TEN
U,V,W
50%

Figure 3. Output Enable Timing Diagram Note 6: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load.

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Module Pin-Out Description
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Name PFC na na VB3 W,VS3 na na VB2 V,VS2 na na VB1 U,VS1 na na V
+

Description PFC none none High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage none none High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage none none High Side Floating Supply voltage 1 Output 1 - High Side Floating Supply Offset Voltage none none Positive Bus Input Voltage none none Negative Bus Input Voltage Low Side Emitter Connection - Phase 3 Low Side Emitter Connection - Phase 2 Low Side Emitter Connection - Phase 1 Logic Input High Side Gate Driver - Phase 1 Logic Input High Side Gate Driver - Phase 2 Logic Input High Side Gate Driver - Phase 3 Logic Input Low Side Gate Driver - Phase 1 Logic Input Low Side Gate Driver - Phase 2 Logic Input Low Side Gate Driver - Phase 3 PFC input Fault Output and Enable Pin Current Protection Pin for PFC Current Protection Pin for Inverter Temperature Feedback +15V Main Supply Negative Main Supply

na na V
-

VRW VRV VRU HIN1 HIN2 HIN3 LIN1 LIN2 LIN3 PFCIN FLT/EN PFCTRIP ITRIP VTH VCC VSS

10

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IRAM630-1562F
Typical Application Connection IRAM630-1562F

Drive IC

1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1F, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DT04-4, application note AN-1044 or Figure 11. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation.

11

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IRAM630-1562F
Maxim um Output Phase RMS Current - A
12 11

10
9 8 7 6 5 4 3 2 1 0 TC = 80C TC = 90C TC = 100C

10

12

14

16

18

20

PWM Sw itching Frequency - kHz

Figure 4. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency + Sinusoidal Modulation, V =400V, TJ=150C, MI=0.8, PF=0.6, fmod=50Hz

Maxim um Output Phase RMS Current - A

8 7 6 5 4 3 2 1 0 1 10 Modulation Frequency - Hz 100 FPWM = 6kHz FPWM = 10kHz FPWM = 16kHz

Figure 5. Maximum Sinusoidal Phase Current vs. Modulation Frequency + Sinusoidal Modulation, V =400V, TJ=150C, TC=100C, MI=0.8, PF=0.6

12

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IRAM630-1562F
120

100

Total Pow er Loss- W

80

60

40 IOUT = 7.5A IOUT = 6A IOUT = 5A 0 2 4 6 8 10 12 14 16 18 20

20

0 PWM Sw itching Frequency - kHz

Figure 6. Total Power Losses vs. PWM Switching Frequency + Sinusoidal Modulation, V =400V, TJ=150C, MI=0.8, PF=0.6, fmod=50Hz

120

100

Total Pow er Loss - W

80

60 FPWM = 16kHz FPWM = 10kHz FPWM = 6kHz

40

20

0 0 1 2 3 4 5 6 7 8 Output Phase Current - ARMS

Figure 7. Total Power Losses vs. Output Phase Current + Sinusoidal Modulation, V =400V, TJ=150C, MI=0.8, PF=0.6, fmod=50Hz

13

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IRAM630-1562F
160

Max Allow able Case Temperature - C

140

120

100 FPWM = 6kHz FPWM = 10kHz FPWM = 16kHz

80

60

40 0 1 2 3 4 5 6 7 8 Output Phase Current - ARMS

Figure 8. Maximum Allowable Case Temperature vs. Output RMS Current per Phase + Sinusoidal Modulation, V =400V, TJ=150C, MI=0.8, PF=0.6, fmod=50Hz

160 TJ avg = 1.28 x TTherm + 7.57 150 140 130 120 110 100 90 65 70 75 80 85 90 95 100 105 110 115 Internal Therm istor Tem perature Equivalent Read Out - C

Figure 9. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6

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IGBT Junction Temperature - C

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IRAM630-1562F
5.0
+5V

Thermistor Pin Read-Out Voltage - V

4.5
REXT

4.0 3.5 3.0 2.5 2.0 1.5

TTHERM C -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 RTHERM k 1747 1245 898.5 655.8 484.0 360.9 271.7 206.5 158.2 122.3 95.23 74.73 59.07 TTHERM C 25 30 35 40 45 50 55 60 65 70 75 80 85 RTHERM k 47.00 37.64 30.33 24.59 20.05 16.43 13.54 11.21 9.328 7.798 6.544 5.518 4.674 TTHERM C 90 95 100 105 110 115 120 125 130 135 140 145 150 RTHERM k 3.972 3.388 2.902 2.494 2.150 1.860 1.615 1.406 1.228 1.076 0.9447 0.8321 0.7349

VTherm RTherm

Max Avg. Min

1.0 -40 -30 -20 -10

10

20 30 40 50 60 70 80 Therm istor Tem perature - C

90 100 110 120 130

Figure 10. Thermistor Readout vs. Temperature (4.7kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table.

11.0

Recommended Bootstrap Capacitor - F

10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0

10F

6.8F

4.7F 3.3F 2.2F 1.5F

10 PWM Frequency - kHz

15

20

Figure 11. Recommended Bootstrap Capacitor Value vs. Switching Frequency

15

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IRAM630-1562F
Figure 12. Switching Parameter Definitions

VCE
50% HIN /LIN

IC HIN /LIN
90 % IC 50% VCE

IC
90 % I C 50% HIN /LIN 50% VCE

VCE

HIN /LIN

10 % IC

10 % IC

tr TON
Figure 12a. Input to Output propagation turnon delay time.

tf TOFF
Figure 12b. Input to Output propagation turnoff delay time.

IF

VCE HIN /LIN

Irr trr
Figure 12c. Diode Reverse Recovery.

16

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IRAM630-1562F
V+

Hin1,2,3
IC Driver

Ho

IN
U,V,W

Lin1,2,3

Lo

IO

Figure CT1. Switching Loss Circuit

V+

Hin1,2,3
IC Driver

Ho

IN
U,V,W

Lin1,2,3

Lo

IO

Io

Figure CT2. S.C.SOA Circuit

V+

Hin1,2,3
IC Driver

Ho

IN
U,V,W

Lin1,2,3

Lo

IO

Io

Figure CT3. R.B.SOA Circuit

17

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IRAM630-1562F
Package Outline IRAM630-1562F2
missing pin : 2,3,6,7,10,11,14,15,17,18 note5 note4

note3

P 9DF00

IRA M630-1562F2

note2

35

note1: Unit Tolerance is + 0.5mm, Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from Font shown on Module. note5: "P" Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module.

Dimensions in mm For mounting instruction see AN-1049

Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information

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IRAM630-1562F
2013-10-23

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