CENTRE OF NANOTECHNOLOGY RTU,KOTA

NANOELECTRONICS

SHOBI BAGGA SIR CNT,RTU,KOTA

MAHENDRA SINGH YADAV

M.TECH,CNT,RTU,KOTA

Split Gate Transistor & Quantu

Cell Auto ata

Silicon on insulator
T!e a"#anta$es o% SO& te'!nolo$( 'o e %ro its )urie" o*i"e +,O-. la(er/ ostl( as a result o% t!e

0it! t!e re"u'tion o% t!e parasiti' 'apa'itan'es, re"u'e" "rain1sour'e 2un'tion 'apa'itan'es/

SO& "e#i'es (iel" i pro#e" s3it'!in$ spee" an" re"u'e" po3er 'onsu ption/ T!e operatin$ spee" is also i pro#e" sin'e t!e isolate" '!annel %ro su)strate )ias pre#ents t!e in'rease in a t!res!ol" #olta$e o% sta'4e" SO& transistors/ &n a""ition, t!e per%e't lateral an" #erti'al isolation %ro lat'!5up an" inter5"e#i'e lea4a$e %ree su)strate pro#i"es

C6OS te'!nolo$(, re"u'tion in #arious inter%eren'es, an" )etter so%t error i unit(/ 6oreo#er, SO& te'!nolo$( o%%ers ti$!ter transistor pa'4in$ "ensit( an" si pli%ie" pro'essin$

SO& transistors are 'lassi%ie" into t3o t(pes8 9partiall( "eplete" +:;. SO&,< i% t!e sili'on %il +t(pi'all( =>> n or ore. on t!e ,O- la(er is t!i'4er t!an t!e "epletion re$ion "ept! )eneat! t!e $ate o*i"e, an" 9%ull( "eplete" +F;. SO&,< i% t!e )o"( +sili'on %il . t!i'4ness is t!in enou$! +t(pi'all( ?> n or less. or t!e "opin$ 'on'entration o% t!e )o"( is lo3 enou$! to )e %ull( "eplete"

F; SO& transistors !a#e superior a"#anta$es o#er :; SO& transistors in ter s o% e*tre el( lo3 su)5t!res!ol" s3in$ +@A? B1"e'a"e., no %loatin$5)o"( e%%e'ts, an" lo3 t!res!ol" #olta$e #ariation 3it! te perature +257 ti es less. Ho3e#er, sin'e F; SO& transistors are e#en ore sensiti#e to pro'ess #ariation su'! as t!e sili'on %il la(er #ariation resultin$ in t!res!ol" #olta$e %lu'tuation, :; SO& "e#i'es 3ere 'o er'iall( intro"u'e" %irst/ 0it! 'are%ul "e#i'e "esi$n an" a"#an'e" pro'ess te'!niCues, %ull( "eplete" ultrat!in5 )o"( SO& +F; UT, SO&. "e#i'es are 'onsi"ere" as one o% t!e )est s'alin$ options

0!( ;ou)le5$ate Transistors E

10 nm Feature size 32 nm ;G5FETs 'an )e use" to %ill t!is $ap ;G5FETs are e*tensions o% C6OS 6anu%a'turin$ pro'esses si ilar to C6OS

Ke( li itations o% C6OS s'alin$ a""resse" t!rou$! ,etter 'ontrol o% '!annel %ro Re"u'e" s!ort5'!annel e%%e'ts ,etter &on1&o%% & pro#e" su)5t!res!ol" slope No "is'rete "opant %lu'tuations transistor $ates

:lanar transistors, in 3!i'! t!e $ates an" t!e '!annel are !oriFontal, Fin FETs, in 3!i'! t!e '!annel is #erti'al an" t!e 'on"u'tion is parallel to t!e 3a%er sur%a'e Berti'al transistors, in 3!i'! t!e 'on"u'tion "ire'tion is #erti'al/

;i%%erent T(pes o% ;G5FETs

First FinFET 5 ;ELTA +;Eplete" Lean5'!annel TrAnsistor.

;esi$n 5 Geo etr(

H%in GG T%in Top $ate o*i"e t!i'4ness GG si"e3all o*i"e t!i'4ness

E%%e'ti#e '!annel len$t! Le%% I L$ate J 2KLe*t

E%%e'ti#e '!annel 3i"t! 0 I T%in J 2KH%in

T!e '!annel 'an )e le%t un "ope", t!e t!res!ol" #olta$e )ein$ a"2uste" )( '!oosin$ t!e appropriate etal %or t!e $ate aterial T!e !ei$!t o% t!is %in 3ill )e at t!e en" t!e ele'tri'al 3i"t! o% t!e "e#i'e/ &n"ee", 'ontrar( to planar "e#i'es, t!e 'on"u'tion ta4es pla'e on t!e #erti'al si"e3alls o% t!e %in/ T!e 'on"u'tion 3i"t! is t!us t3i'e t!e %in !ei$!t +!%in./ As t!e %in !ei$!t is li ite" to t(pi'all( ?>L=>> n , FinFETs are usuall( "esi$ne" as ulti%in$er transistors, 3it! a 'on"u'tion 3i"t! Cuanti%ie" )( 2!%in/ T!e i pa't o% t!is 3i"t! CuantiFation on t!e 'ir'uit "esi$n %le*i)ilit( !as to )e a''ounte" %or/ Furt!er ore, in or"er to rea'! !i$! la(out "ensit(, t!e ratio )et3een t!e %in !ei$!t an" a'!ie#a)le pit'! )et3een t3o su''essi#e %ins !as to )e a*i iFe"/ &n parti'ular, t!e %in !ei$!t !as to )e !i$!er t!an t!e pit'! )et3een t!e %in$ers in or"er to o)tain t!e sa e "ri#e 'urrent per sili'on area as planar "ou)le $ate transistors

Tri $ate Transistor

In that case, the channel is controlled by the gate on three sides. This device, called Tri gate has a conduction width given by twice the fin height plus the fin width. Tri gate is still a multi finger device, and the pitch between fins has to be lower than hfin +wfin/2 to obtain higher drive currents per silicon area than with planar devices. This limit is far more strict for Tri gate than for Fin FET, since the fin height must be as low as the fin width in order to operate in tri gate mode, and comparable to the gate length to benefit from a good electrostatic channel control. To further improve the electrostatic control of the channel, the buried o ide can be slightly etched during the fin patterning. In that case, the gate material is also deposited below the bottom face of the channel and the electrostatic control of this bac! interface can be improved These devices are called "#$ate transistors or %#FETs when the buried o ide is undercut

%#FET and "#$ate architectures are very similar to Trigate, but their channel control is close to that of a &uadruple#gate device.

;esi$n 5 ;epen"en'e o% Bt! an" S S3in$ on H%in

=>

T!e saturation o% Bt! roll5o%% an" S is o)ser#e" 3!en H%in is in'rease" %ro 2> n to N> n T!e 'riti'al H%in nee"e" %or saturation is "epen"ent on T%in For lar$er T%in, t!e 'riti'al H%in is 'orrespon"in$l( lar$er

;esi$n 5 ;epen"en'e o% Bt! an" S S3in$ on T%in

=>

==

Bt! roll5o%% an" S '!an$e %ro => n

ore an"

ore rapi"l( as T%in '!an$in$

to A> n , an" slo3 "o3n a%ter t!at

Fin t!i'4ness re"u'e 'an suppress s!ort '!annel e%%e'ts, )ut t!e #ariation 3ill '!an$e t!e per%or an'e o% t!e "e#i'e a lot On t!e ot!er !an" t!ere is a si$ni%i'ant "ra3)a'4 in SO& te'!nolo$(/ Sin'e t!e ,O-, 3!i'! !as appro*i atel( =>> ti es lo3er t!er al 'on"u'ti#it( t!an t!at o% sili'on,pre#ents t!er al 'on"u'tion pat! %ro SO& transistors to t!e su)strate, SO& transistors are easil( a%%e'te" )( t!e t!er al !eatin$ $enerate" in t!e '!annel, 3!i'! is 'alle" 9Sel%5Heatin$ E%%e'ts/<
==

=2

ConseCuentl(, t!e sel%5!eatin$ "e$ra"es t!e o)ilit( o% 'arriers an" 'auses t!e t!res!ol" #olta$e s!i%t/ T!ese e%%e'ts $et 3orse 3it! F; stru'tures )e'ause t!e( use t!inner sili'on %il s

uantu!"#ot c$llular auto!ata % CA&

As t'$ nu!($r o) transistors *lac$# onto a sin+l$ c'i* incr$as$s, t'$ '$at +$n$rat$# #urin+ a s,itc'in+ c-cl$ can no lon+$r ($ r$!o.$# an# t'is !a- r$sult in consi#$ra(l$ li!itation o) t'$ s*$$# o) o*$ration. T'$r$ is a n$, *ara#i+! ,'ic' ta/$s a#.anta+$ o) t'$ r$#uction o) t'$ )$atur$ si0$.

T'$ a#.anta+$ o) CA li$s in t'$ $1tr$!$l- 'i+' *ac/in+ #$nsiti$s *ossi(l$ #u$ to t'$ s!all si0$ o) t'$ #ots, t'$ si!*li)i$# int$rconn$ction, an# t'$ $1tr$!$l- lo, *o,$r"#$la- *ro#ucts

T!is is t!e si plest non5'lo'4e" QCA 'ell/ T!e 'ell 'onsists o% %our Cuantu "ots positione" at t!e 'o ers o% a sCuare/

T!e 'ell 'ontains t3o e*tra o)ile ele'trons, 3!i'! are allo3e" to tunnel )et3een nei$!)orin$ sites o% t!e 'ell, )ut not out o% t!e 'ell/ &% t!e tunnel )arriers )et3een 'ells are su%%i'ientl( !i$!, t!e ele'trons 3ill )e 3ell lo'aliFe" on in"i#i"ual "ots/

=2

=7

T!e Coulo ) repulsion )et3een t!e ele'trons sites in t!e sCuare as s!o3n/

a4es t!e

o''up( antipo"al

For an isolate" 'ell, t!ere are t3o ener$eti'all( eCui#alent arran$e ents, polariFations, o% t!e e*tra ele'trons t!at 3e 'an "enote as )inar( = an" )inar( >/

T!e t3o polariFation states o% t!e 'ell 3ill not )e ener$eti'all( eCui#alent i% ot!er 'ells are near)(, )e'ause t!e Coulo ) intera'tion 3it! ot!er 'ells )rea4s t!e "e$enera'(

A QCA 3ire is s!o3n in Fi$/ T!e le%t5 ost 'ell is %i*e" 3it! polariFation representin$ t!e input/ T!e "i%%eren'e )et3een input an" outputs 'ells in QCA arra(s is si pl( t!at inputs are %i*e" an" outputs are %ree to '!an$e/

T!e $roun" state 'on%i$uration o% t!e re ainin$ %ree 'ells is t!e one 3it! ea'! 'ell polariFe" in t!e sa e 3a( as t!e input 'ell/
=7

=D

0e 'an 'onsi"er t!is trans ission o% t!e input si$nal %ro one en" to t!e ot!er/ Cells t!at are positione" "ia$onall( %ro ea'! ot!er ten" to anti5ali$n/

Fi$/ s!o3s t!e %un"a ental QCA lo$i'al "e#i'e, a t!ree5input a2orit( $ate, %ro 3!i'! ore 'o ple* 'ir'uits 'an )e )uilt/ T!e 'entral 'ell, la)ele" t!e "e#i'e 'ell, !as t!ree %i*e" inputs la)ele" A, ,, an" C/ T!e "e#i'e 'ell !as its lo3est ener$( state i% it assu es t!e polariFation o% t!e a2orit( o% t!e t!ree input 'ells/

&n 'lo'4e" 'ir'uits, t!e s(ste is s3it'!e" s oot!l( )et3een t!e $roun" state 'orrespon"in$ to t!e ol" inputs an" t!e state 'orrespon"in$ to t!e ne3 inputs/

Clo'4in$ allo3s 'ells to )e lo'4e" in a parti'ular state, per%or in$ as a lat'!/ T!us $eneral purpose 'o putin$ is possi)le, an" in parti'ular, lat'!es a4e it possi)le to i ple ent pipeline" ar'!ite'tures as reCuire" in all !i$!5 per%or an'e s(ste s

A se#ere pro)le o% QCA arises %ro t!e %a't t!at QCA are sin$le5ele'tron "e#i'es an" t!e( are #er( sensiti#e to t!e )a'4$roun" '!ar$e/ To"a(, no #ia)le solutions to t!e )a'4$roun" '!ar$e i une sin$le5ele'tron s(ste s are 4no3n/ Anot!er serious "ra3)a'4 o% QCA "e#i'es is t!at roo 5 te perature operation is not a'!ie#a)le 3it! soli" state QCA s(ste s

T!e 'ir'uit is operate" in )ot! t!e "ire'tion an" no po3er a pli%i'ation

=D