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EC2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES
SEM:II Branch: CSE & IT
"UESTION BAN#
UNIT . I
$ART . A
1. Define the following terms: i) Charge ii) Current iii) Voltage iv) Power
2. Define the following terms: i) Mesh ii) Loop iii) Node iv) ran!h v)Networ"
#. Distinguish $etween a ran!h and a node of a !ir!uit.
%. Distinguish $etween a Mesh and a Loop of a !ir!uit.
&. Define '!tive and Passive elements of the !ir!uits.
(. Define )nilateral and ilateral elements.
*. Define linear and Non+Linear elements.
,. Define Lumped and distri$uted elements
-. .ow is the ele!tri!al energ/ sour!es !lassified0
11. Define an ideal voltage and an ideal !urrent sour!e.
11. 2hat are dependent and independent sour!es0
12. 2hat are the different t/pes of dependent or !ontrolled sour!es0
1#. 2hat is resistan!e0
1%. 2rite down the V+ 3 relationship of passive !ir!uit elements.
1&. Define 4hm.s law.
1(. 5tate and e6plain 7ir!hhoff.s laws
1*. 8wo resistan!es with the value of 91: 92 are !onne!ted in i) series and ii) parallel. 2hat is
the
e;uivalent resistan!e0
1,. 8wo indu!tors with the value of L1: L2 are !onne!ted in i) series and ii) parallel. 2hat is the
e;uivalent indu!tan!e0
1-. 8wo !apa!itors with the value of C1: C2 are !onne!ted in i) series and ii) parallel. 2hat is
the
e;uivalent !apa!itan!e0
21. 5tate voltage division rule.
21. 5tate !urrent division rule.
22. Define sour!e transformation.
2#. 2rite down the formula for a star !onne!ted networ" is !onverted into a delta networ".
2%. 2rite down the formula for a delta !onne!ted networ" is !onverted into a star networ".
2&. 2hat is Mesh anal/sis0
2(. 2hat is Nodal anal/sis0
2*. 2hen do we go for super mesh anal/sis0
2,. 2hen do we go for super node anal/sis0
2-. 5tate superposition theorem.
#1. 5tate 8hevenin.s theorem.
#1. 5tate Norton.s theorem.
#2. 5tate ma6imum power transfer theorem.
##. Define dualit/.
#%. 2rite down few e6amples pf dual pairs.
$ART - B
1. <6plain voltage division = !urrent division method using suita$le e6ample.
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2. Derive the relationship to e6press three delta !onne!ted resistan!es into star.
#. 8wo resistan!es 1&> and 21> are !onne!ted in parallel. ' resistan!e of 12> is !onne!ted in
serieswith the !om$ination. ' voltage of 121 V is applied a!ross the entire !ir!uit. ?ind the
!urrent in ea!h resistan!e: voltage a!ross 12> resistan!e and power !onsumed in all the
resistan!es.
%. ' resistan!e 9 is !onne!ted in series with a parallel !ir!uit !omprising two resistan!es of 12
and ,>.8he total power dissipated in the !ir!uit is *11 watts when the applied voltage is 211V.
Cal!ulate thevalue of 9.
&. <6plain the loop anal/sis of anal/@ing a given networ": with a suita$le e6ample.
(. 5tate and e6plain 5uperposition theorem.
*. 5tate and e6plain 8hevenin.s theorem.
,. ' $ridge networ" formed $/ four arms is as 'A2>: CA#>: CDA%>: D'A&>. ' ( >
resistan!e is!onne!ted $etween and D. ' $atter/ sour!e of -V is !onne!ted with internal
resistan!e of 1 >$etween ' and C su!h that ' is Bve and C is .ve. Cal!ulate !urrent through (>
resistan!e $/: i)Norton.s theorem ii) 8hevenin.s theorem.
UNIT . II
$ART . A
1. 2hat is transient state0
2. 2hat is transient time0
#. 2hat is natural response0
%. 2hat is transient response0
&. Define Lapla!e 8ransform fun!tion.
(. 2hat is Lapla!e transform of eat: sin at: teat and tn.
*. 2hat is inverse Lapla!e 8ransform0
,. Define time !onstant of 9L !ir!uit.
-. Define time !onstant of 9C !ir!uit.
11. 2hat is meant $/ natural fre;uen!/0
11. Define damping ratio.
12. 2rite down the !ondition: for the response of 9LC series !ir!uit to $e under damped for step
input.
1#. 2rite down the !ondition: for the response of 9LC series !ir!uit to $e over damped for step
input.
1%. Define initial value theorem.
1&. Define final value theorem.
1(. 2hat is driving point impedan!e0
1*. 2hat is transfer point impedan!e0
1,. Define networ" fun!tion.
1-. Define Pole and @ero.
21. Define resonant !ir!uit.
21. 2hen the !ir!uit is said to $e in resonan!e.
22. 2hat is resonant fre;uen!/0
2#. Define andwidth.
2%. Define sele!tivit/.
2&. Define ;ualit/ fa!tor.
2(. Define half power fre;uen!ies.
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2*. 2rite down the formula for indu!tive rea!tan!e and !apa!itive rea!tan!e.
2,. Cive the e6pression for ;ualit/ fa!tor of series 9LC !ir!uit.
2-. Cive the e6pression for ;ualit/ fa!tor of parallel 9LC !ir!uit.
$ART . B
1. Determine the e6pression of resonant fre;uen!/ and $andwidth of a series resonant !ir!uit.
2. Derive the e6pression for the half power $andwidth of a parallel resonant !ir!uit.
#. 2hat is D+fa!tor0 ?ind values of D+fa!tor for an indu!tor and !apa!itor.
%. 3n a single tuned resonant !ir!uit: the applied voltage in a primar/ !oil <g A 21 volts E9gA1):
91A92A
&>: L1AL2A #2 F.: M A21F .: se!ondar/ side !apa!itan!e C2 A 1.&F ?. Determine the resonant
fre;uen!/ and the output voltage at this fre;uen!/.
&. Derive the e6pression of ma6imum value of <1 and 31.
$ART . A
1. 2hat is semi!ondu!tor0
2. 2hat is energ/ level diagram0
#. 2hat is energ/ $and0
%. 2hat are the !lassifi!ations of semi!ondu!tors0
&. 2hat is doping0
(. 2hat are the !lassifi!ations of e6trinsi! semi!ondu!tor0
*. 2hat is N+t/pe semi!ondu!tor0
,. 2hat is P+t/pe semi!ondu!tor0
-. Define mass '!tion Law0
11. List the semi!ondu!tor parameters whi!h var/ with temperature0
11. 2hat is energ/ gap0
12. Define drift !urrent.
1#. Define diffusion !urrent.
1%. 2rite down the <instein relationship e;uation0
1&. Define diffusion length.
1(. Define !arrier life time.
1*. 2hat is !ontinuit/ e;uation0
1,. Define PN Gun!tion.
1-. 2rite down the diode !urrent e;uation.
21. 2hat is stati! resistan!e0
21. 2hat is d/nami! resistan!e0
22. 2hat is reverse resistan!e0
2#. Define transition !apa!itan!e.
2%. Define diffusion !apa!itan!e.
2&. 2hat are the $rea"downs in PN Gun!tion diode0
2(. 2hat is @ener diode0
2*. 2hat are the $rea"down me!hanisms in @ener diode0
2,. 2hat are the appli!ations of @ener diodes0
$ART . B
1. <6plain the PN Gun!tion diode.
2. <6plain the diode !urrent e;uation.
#. 2hat are the PN diode appli!ations0
%. Derive the e6pression for transition !apa!itan!e and diffusing !apa!itan!e.
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&. <6plain different methods of $rea"down in PN Gun!tion diodes.
(. Des!ri$e the operation of Hener diode and e6plain its !hara!teristi!s.
UNIT . IV
$ART . A
1. 2hat is 8ransistor0
2. 2hat are the advantages of 8ransistor0
#. 2hat are the t/pes of 8ransistor0
%. Des!ri$e the $asi! stru!ture of the I80
&. 2hat are the three terminals in a I80
(. 2hat is $iasing0
*. 2hat are the t/pes of transistor !onfiguration0
,. Define stati! !hara!teristi!s !urves in C !onfiguration.
-. Define input !hara!teristi!s for C !onfiguration.
11. 2hat is earl/ effe!t0
11. 2hat is meant $/ pun!h through0
12. 2rite the !urrent amplifi!ation fa!tor for a C transistor.
1#. 2rite the !urrent amplifi!ation fa!tor C< transistor.
1%. 2rite the !urrent amplifi!ation fa!tor for a CC transistor.
1&. 2rite the formula for input resistan!e in a C transistor.
1(. Define output !hara!teristi!s for C !onfiguration.
1*. 2rite the relationship $etween J and K.
1,. 2hi!h is the most !ommonl/ used transistor !onfiguration0 2h/0
1-. 2h/ is sili!on preferred over germanium in the manufa!ture of semi!ondu!tor devi!es0
21. 2hat are the different t/pes of transistor $rea"down0
21. Define dela/ time.
22. Define rise time.
2#. Define turn+on time.
2%. Define storage time.
2&. Define fall time
2(. Define turn off time.
2*. Cive few reasons for storage time.
2,. 2hat are the t/pes of ?<80
2-. Define pin!h off region.
#1. Define !hara!teristi! !urve.
#1. List the !hara!teristi!s of I?<8.
#2. Define pin!h off voltage.
##. 2rite down 5h!ot"l/.s e;uation.
#%. 2hi!h is the normal operation region in I?<80
#&. 2hat is $rea" down voltage0
#(. List the !hara!teristi! parameters of I?<8.
#*. Define 8rans!ondu!tan!e.
#,. Define Drain resistan!e.
#-. Define Drain !ondu!tan!e.
%1. Define amplifi!ation fa!tor.
%1. 2hat is M45?<80
%2. 2hat are the t/pes of M45?<80
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%#. 2hat is the other name for M45?<80
%%. 2hat are the pre!autions to $e ta"en when handling M45?<80
%&. 2rite the use of I?<8 as a voltage varia$le resistor.
$ART - B
1. Compare transistor !onfigurations.
2. <6plain a$out 'valan!he multipli!ation.
#. <6plain a$out 9ea!h through or Pun!h through.
%. Cive some reasons for dela/ time.
&. Cive some reasons for rise time and fall time.
(. Des!ri$e the transistor swit!hing times.
*. 2hat are the features of ?<80
,. <6plain the Chara!teristi!s of I?<8 with the help of neat s"et!hes.
-. 2ith the help of suita$le diagrams e6plain the wor"ing of different t/pes of M45?<8.
11. Compare ?<8 and I8.
11. 2hat are the appli!ations of I?<80
12. Compare I?<8 and M45?<8.
1#. Compare N+!hannel and P+!hannel M45?<8s.
1%. Compare N+!hannel and P+!hannel ?<8s.
UNIT .V
$ART - A
1. 2hat is Vara!ter diode0
2. 2hat are the appli!ations of Vara!ter diode0
#. 2hat is tunneling0
%. 2hat are the appli!ations of 8unnel diode0
&. 2hat is Photo diode0
(. 2hat are the t/pes of displa/ devi!es0
*. 2hat is a!tive displa/ devi!e0
,. 2hat is passive displa/ devi!e0
-. 2hat are the t/pes of L<D0
11. 2hat are the advantages of L<D0
11. 2hat are the t/pes of LCD.s0
12. 2hat are the appli!ations of LCD0
1#. Des!ri$e the $asi! stru!ture of 5C9.
1%. 2hat is forward $rea" over voltage0
1&. 2hat is reverse $rea" over voltage0
1(. Define holding !urrent.
1*. 2hat is the forward $lo!"ing region0
1,. Define Lat!hing0
1-. 2hat are the turn 4?? me!hanism used for 5C90
21. 2hat are the advantages of 5C90
21. 2hat is lat!hing !urrent0
22. 2hat is holding !urrent0
2#. Define voltage safe fa!tor.
2%. 2hat is turn 4N time0
2&. 2hat is turn 4?? time0
2(. 2hat is L'5<90
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2*. Cive the appli!ations of L'5<9.
2,. 2hat is 893'C0
2-. 2hat are the appli!ations of 893'C0
#1. 2hat is D3'C0
#1. 2hat are the appli!ations of D3'C0
#2. 2hat is )I80
##. 2hat is intrinsi! stand 4?? ratio of )I80
#%. 2hat is pea" point voltage0
#&. 2hat are the appli!ations of )I80
#(. <6plain the following terms: i) Photo!ondu!tive sensor ii) Photo emissive sensor
$ART - B
1. <6plain the operation of P3N diode.
2. Compare 8unnel diode and P+N Gun!tion diode0
#. 2hat are the appli!ations of P3N diode0
%. Des!ri$e the operation of L<D and LCD.
&. <6plain the operation of 893'C and D3'C.
(. Draw the e;uivalent !ir!uit of )I8 and e6plain its operation.
*. 2hat are the different regions in !hara!teristi! of )I80
,. 2rite short notes on light a!tivated 5C9.
-. Compare 5C9 and 893'C0
11. 2hat are the different operating modes of 893'C0
11. Compare LCD and L<D.
12. 2hat are the appli!ations of L<D0
1#. Cive the appli!ations of 5C9.
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EC 2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES
(Common to Biomedical Engineering, Electronics and Communication Engineering
and Information Technology)
(Regulation 2008)
Time : Three hours a!imum : "00 ar#s
$ns%er $&& 'uestions
PART A (10 2 = 20 Marks)
"( )ind Re' of the resti*e net%or# (
2( +etermine the current dra%n ,y the source as sho%n in
-( )or the circuit sho%n in fig(- determine the *alue of . at resonance and Band%idth of the circuit(
/( $ 0eries RC circuit consists of resistor of "0 and a ca1acitor of 0(") as sho%n in )ig(/( $ constant *oltage of 20* is
a11lied to the circuit at t20( +etermine *oltage across resistor and ca1acitor(
3( 0tate ass4$ction la%(
5( +efine diffusion ca1acitance(
6( +efine Base %idth modulation and ,ring out its conse'uences(
8( ention the ad*antages of 70)ET o*er 8)ET(
9( +ra% the t%o transistor model of an 0CR %ith its characteristic cur*e(
"0( :nder %hat 1rinci1le does a 1hoto *oltaic cell %or#;
PART B (5 16 = 0 Marks)
""( (a) (i) :se The*enin<s theorem to find the current through 3 resistor (ar#s 8) (ii) )ind the *oltage across 2
resistor in fig(5 ,y using su1er 1osition
theorem( (ar#s 8)
7r
(,) (i) +etermine current flo%ing through the 3 resistor in the circuit =orton theorem( (ar#s 8)
(ii) +etermine the ma!imum 1o%er deli*ered to the load in the circuit (ar#s 8)
"2( (a) (i) )ind the com1lete solution for the current in a R&C circuit for a sinusoidal in1ut( (ar#s 8)
(ii) The circuit consists of R 2 "0, & 2 0(3 > and C 2 200 ? )( If the s%itch is closed %hen f 2 -0@( +etermine the
current e'uation( (ar#s 8)
7r
(,) (i) Consider the single tuned circuit
"( Resonant fre'uency
2( 7ut1ut *oltage at resonance and
-( a!imum out1ut *oltage(
$ssume RsAA%r&, and #20(9( (ar#s 8)
(ii) Bith neat diagram, o,tain gain of a dou,le tuned am1lifier %ith critical *alue of mutual inductance( (ar#s 8)
"-( (a) (i) 0tate continuity e'uation and 1ro*e that concentration of changes is inde1endent of time %ith Cero electric
field( (ar#s 8)
(ii) Bith neat diagram, e!1lain the formation of D= Eunction and deri*e its de1letion %idth( (ar#s 8)
7r
(,) (i) Bhat is the ,rea#do%n mechanism found in Fener diode; E!1lain it %ith neat diagram( (ar#s 8)
(ii) Brite detailed notes on s1ace charge and diffusion ca1acitance( (ar#s 8)
"/( (a) E!1lain the construction and %or#ing 1rinci1le of a 8)ET and o,tain its characteristic 1arameters( (ar#s "5)
7r
(,) E!1lain the o1eration of a +e1letion mode 70)ET and its com1arison o*er enhancement 70)ET %ith neat
diagrams( (ar#s "5)
"3( (a) +iscuss the construction and o1eration of a Tunnel +iode %ith neat energy ,and diagram( (ar#s "5)
7r
(,) Brite detailed notes on:
(i) +I$C and TRI$C (ar#s 3)
(ii) Dhotodiode and Dhototransister (ar#s 3)
(iii) &E+ and &C+ (ar#s 5)
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