Electronic Devices Business Headquarters All copy rights are reserved.

1
Feb. 2012
Fuji Electric Co., Ltd.
Electronic Device Business headquarters,
Technology Division
T-type Advanced 3-level Inverter Module
Power dissipation and comparison tables
1. Introduction of Advanced 3-level Inverter Module
2. Inverter Mode comparison in 300A modules
3. Rectifier Mode comparison in 300A modules
4. RB-IGBT device characteristics
Electronic Devices Business Headquarters All copy rights are reserved. 2
2-level, NPC and A-NPC 3-level control
A-NPC 3level is suitable topology for High efficiency alternative Energy systems.
Type 2-level Inverter

NPC 3-level Inverter A-NPC 3-level
with Reverse series
A-NPC 3-level
with RB-IGBT
Circuit
Device IGBT:1200V IGBT:600V IGBT:1200V
+600V(Reverse series)
IGBT:1200V
+600V(RB-IGBT)
Output
Voltage


On-loss Small Large Large Small
SW-loss Large Small Small Small
Filter loss Large Small Small Small
Composing Easy Complication Easy Easy
Total Normal Normal Good Excellent
T1
T2
T1
T2
T3
T4
T1
T2
T4 T3
P
U
N
C
M
T1
T2
T4
T3
P
U
N
M
Electronic Devices Business Headquarters All copy rights are reserved. 3
950. 0
570. 0 570. 0 570. 0
562. 7
221. 7 271. 8 282. 9
596. 4
1008. 0
684. 8 651. 9
2109. 1
1799. 7
1526. 6 1504. 8
0
500
1000
1500
2000
2500
1 2 3 4
L
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s
e
s

i
n

I
n
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t
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r

M
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(
W
)
2-level, NPC and A-NPC 3-level control comparison,
in Inverter Mode
A-NPC 3level is suitable topology for High efficiency alternative Energy systems.
2-level Inverter (2L) NPC 3-level Inverter (NPC) A-NPC 3-level
Reverse series RB-IGBT
IGBT1200V IGBT600V IGBT1200V/600V, RB-IGBT600V
T1
T2
T3
T4
T1
T2
T1
T2
T4 T3
P
U
N
C
M
T1
T2
T4
T3
P
U
N
M
A-NPC 3-level (RB-IGBT) A-NPC 3-level (Reverse series) NPC 3-level 2-level
71.3% 72.4% 85.3% 100%
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950.0
570.0 570.0 570.0
562.7
243.3
326.3 336.0
573.5
939.6
635.0 602.1
2086.2
1752.9
1531.3
1508.1
0
500
1000
1500
2000
2500
1 2 3 4 L
o
s
s
e
s

i
n

R
e
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t
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r

M
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(
W
)
2-level, NPC and A-NPC 3-level control comparison,
in Rectifier Mode
A-NPC 3level is suitable topology for High efficiency alternative Energy systems.
2-level Inverter (2L) NPC 3-level Inverter (NPC) A-NPC 3-level
Reverse series RB-IGBT
IGBT1200V IGBT600V IGBT1200V/600V, RB-IGBT600V
T1
T2
T3
T4
T1
T2
T1
T2
T4 T3
P
U
N
C
M
T1
T2
T4
T3
P
U
N
M
A-NPC 3-level (RB-IGBT) A-NPC 3-level (Reverse series) NPC 3-level 2-level
72.2% 73.4% 84.0% 100%
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Equivalent circuit

Fuji A-NPC 3-level inverter Module 100A Type
Type name : 12MBI100VN-120-50
12MBI100VX-120-50
T1,T2 : 1200V/100A
T3,T4 : 600V/100A
For 400V class AC output
12MBI100VN-120-50 Outline View
12MBI100VN-120-50
12MBI100VX-120-50
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Fuji A-NPC 3-level inverter Module 300A Type
Equivalent circuit
(T3 and T4 are RB-IGBT)
Package outline
T1
T2
T4
T3
P
U
N
M
T1 G
T1/T4 E
T2 G
T2 E
T3 E T3 G
C T4 G
Type name : 4MBI300VG-120R-50
T1,T2 : 1200V/300A
T3,T4 : 600V/300A
For 400V class AC output
Electronic Devices Business Headquarters All copy rights are reserved. 7
Inverter Mode comparison in 300A modules
2-level; 2MBI300VH-120-50
NPC 3-level; 2MBI300VB-060-50 series
Advanced 3-level; 4MBI300VG-120R-50
Conditions;
100kVA Inverter
AC 400V, Io=145A, cos=1
Vdc=660V(330V+330V), Modulation rate =0.98
Tj=125deg,
Rg(T1,T2)=+10/-1ohm, Rg(T3,T4)=+8.2/-39ohm
Electronic Devices Business Headquarters All copy rights are reserved. 8
0
1,000
2,000
3,000
4,000
5,000
0 10 20 30
Fc (kHz)
D
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s
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p
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(
W
)
2Level
NPC 3-Level
Advanced 3-Level
RB-IGBT
Total Loss Comparison in Inverter Mode
Advanced 3-level module achieves lowest loss in 30kHz
and less carrier frequency
Total Loss
Electronic Devices Business Headquarters All copy rights are reserved. 9
0%
50%
100%
150%
200%
250%
300%
350%
400%
0 10 20 30
Fc (kHz)
D
e
v
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c
e

L
o
s
s

(
%
)
2Level
NPC 3-Level
Advanced 3-Level
RB-IGBT
Device Loss comparison in Inverter Mode
Advanced 3-level module achieves lowest loss in 30kHz
and less carrier frequency
Device Loss as 5kHz loss=100%
Electronic Devices Business Headquarters All copy rights are reserved. 10
950.0
570.0 570.0
562.7
221.7
282.9
596.4
1008.0
651.9
2109.1
1799.7
1504.8
0
500
1,000
1,500
2,000
2,500
1 2 3
2-Level
NPC 3-Level
A- 3Level
D
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s
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L
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s
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s

(
W
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Von Loss
SW Loss
Filter Loss
950.0
570.0 570.0
562.7
221.7
282.9
596.4
1008.0
651.9
2109.1
1799.7
1504.8
0
500
1,000
1,500
2,000
2,500
1 2 3
2-Level
NPC 3-Level
A- 3Level
D
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Von Loss
SW Loss
Filter Loss
Von Loss
SW Loss
Filter Loss
Loss Comparison in fc=5kHz Inverter Mode
Total loss of A-3level Inverter is lowest in 5kHz Inverter Mode
30% loss reduction from 2-level Inverter
17% loss reduction from NPC 3-level Inverter
100%
85% 71%
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Device Loss Analysis in fc=5kHz Inverter Mode
T1 and T4 FWD of A-3 level is not flowed the current.
CD1
CD2
89.6
67.0
83.9
25.7
10.9
17.4
39.0
16.3
20.7
9.8
29.1
84.0
24.7
9.0
17
9.8
0
50
100
150
200
250
1 2 3
D
e
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s

(
W
)

2 - Level
NPC 3 - Level A - 3Level
T1,T2
IGBT
Poff
Pon
Psat
T1,T2
FWD
Prr
Pf
T1,T4
IGBT
Psat
Pon
T2,T3
IGBT
P
Pf
Poff
CD1,2
FWD
P
193W
193W
205W
205W
155W
155W
T1,T2
IGBT
Psat
Pon
T3,T4
RB - IGBT
Prr
Psat
Poff
89.6
67.0
83.9
25.7
10.9
17.4
39.0
16.3
20.7
9.8
29.1
84.0
24.7
9.0
17
9.8
0
50
100
150
200
250
1 2 3
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W
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2 - Level
NPC 3 - Level A - 3Level
T1,T2
IGBT
Poff
Pon
Psat
T1,T2
FWD
Prr
Pf
T1,T4
IGBT
Psat
Pon
T2,T3
P
Psat
Poff
CD1,2
FWD
P
193W
193W
205W
205W
155W
155W
IGBT
Psat
Pon
T3,T4
RB - IGBT
Prr
Psat
Poff
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Rectifier Mode comparison in 300A modules
2-level; 2MBI300VH-120-50
NPC 3-level; 2MBI300VB-060-50 series
Advanced 3-level; 4MBI300VG-120R-50
Conditions;
100kVA Inverter
AC 400V, Io=145A, cos=1
Vdc=660V(330V+330V), Modulation rate =0.98
Tj=125deg
Rg(T1,T2)=+10/-1ohm, Rg(T3,T4)=+8.2/-39ohm
Electronic Devices Business Headquarters All copy rights are reserved. 13
0
500
1,000
1,500
2,000
2,500
3,000
3,500
4,000
4,500
0 5 10 15 20 25 30 35
Fc (kHz)
D
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p
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L
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(
W
)
2Level
NPC 3-Level
Advanced 3-Level
RB-IGBT
Total Loss Comparison in Rectifier Mode
Advanced 3-level module achieves lowest loss in 20kHz
and less carrier frequency
Total Loss
Electronic Devices Business Headquarters All copy rights are reserved. 14
0%
50%
100%
150%
200%
250%
300%
350%
400%
0 10 20 30
Fc (kHz)
D
e
v
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c
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L
o
s
s
(
%
)
2Level
NPC 3-Level
Advanced 3-Level
RB-IGBT
Device Loss comparison in Rectifier Mode
Advanced 3-level module achieves lowest loss in 20kHz
and less carrier frequency
Device Loss as 5kHz loss 100%
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Loss Comparison in fc=5kHz Rectifier Mode
Total loss of A-3level Inverter is lowest in 5kHz Rectifier Mode
30% loss reduction from 2-level Inverter
14% loss reduction from NPC 3-level Inverter
100%
84% 72%
950.0
570.0 570.0
562.7
243.3
336.0
573.5
939.6
602.1
2086.2
1752.9
1508.1
0
500
1,000
1,500
2,000
2,500
1 2 3
D
i
s
s
i
p
a
t
i
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n

L
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s
s
e
s

(
W
)
Von Loss
SW Loss
Filter Loss
2-Level NPC 3-Level A- 3Level
950.0
570.0 570.0
562.7
243.3
336.0
573.5
939.6
602.1
2086.2
1752.9
1508.1
0
500
1,000
1,500
2,000
2,500
1 2 3
D
i
s
s
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p
a
t
i
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L
o
s
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s

(
W
)
Von Loss
SW Loss
Filter Loss
Von Loss
SW Loss
Filter Loss
2-Level NPC 3-Level A- 3Level
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Device Loss Analysis in fc=5kHz Rectifier Mode
T1 and T4 FWD of A-3 level is not flowed the current.
CD1
CD2
10.1
25.7
39.0
85.5
61.1
75.6
29.1
13.4
20.5
17.3
24.7
10.9
14.0
16.3
21.5
30.6
17.1
0
20
40
60
80
100
120
140
160
180
200
2level NPC 3level A-3level
D
e
v
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c
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L
o
s
s
(
W
)

189W
189W
167W
167W
156W
156W
T1,T2
IGBT
Poff
Pon
Psat
T1,T2
FWD
Prr
Pf
T1,T4
FWD
Pf
Prr
T2,T3
IGBT
T2,T3
FWD
P
Poff
Pon
Psat
CD1,2
FWD
Pf
T1,T4
FWD
Pf
Prr
T3,T4
RB - IGBT
Poff
Pon
Psat
10.1
25.7
39.0
85.5
61.1
75.6
29.1
13.4
20.5
17.3
24.7
10.9
14.0
16.3
21.5
30.6
17.1
0
20
40
60
80
100
120
140
160
180
200
2level NPC 3level A-3level
D
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L
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s
s
(
W
)

189W
189W
167W
167W
156W
156W
T1,T2
IGBT
Poff
Pon
Psat
T1,T2
FWD
Prr
Pf
T1,T4
FWD
Pf
Prr
T2,T3
IGBT
T2,T3
FWD
P
Poff
Pon
Psat
CD1,2
FWD
Pf
T1,T2
FWD
Pf
Prr
T3,T4
RB - IGBT
Poff
Pon
Psat
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Reduction control of RB-IGBT leakage current
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570.0 570.0
282.9 282.9
651.9 651.9
16.3 0.0
1521.2 1504.8
0
200
400
600
800
1000
1200
1400
1600
Advanced 3-Level
RB-IGBT with Leakage Current
Reduction Control
Advanced 3-Level without Leakage
Current Reduction Control
RB-IGBT Leakage Current Loss in 300A type
100% 100.01%
Von Loss
SW Loss
Filter Loss
Leakage
Current Loss
RB-IGBT leakage Current loss is extremely low at Tj=125deg
Junction temperature, Tj, must be below 125deg
D
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A-3 Level module
With Leakage Current Reduction
Control

A-3 Level module
Without Leakage Current Reduction Control

+0.01%
Only
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-15
-10
-5
0
-800 -600 -400 -200 0
Vce (V)
J
c

(
A
/
c
m
2
)
J
c
(
m
A
/
c
m
2
)

Vge=0V
Vge=+15V
Leakage current
Leakage current can be reduced
with Vg=+15V
p+
Collector
n-
p p
n+ n+
Emitter Gate
p+ p+
Depletion region


RB-IGBT Leakage current
Vge=0V-15V
Tj=125
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RB-IGBT device characteristics
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Dicing Surface
Depletion region
Negative bias
GND
N
-
P
+
P
+
P
+
Active
Scribe
Carrier generation at dicing surface
Conventional IGBT
Cross sectional diagram of RB-IGBT
Junction
Isolation region
Dicing
Surface
Depletion region
GND
Negative bias
P
+
P
+
P
+
N
-
Active
Scribe
RB-IGBT
Electronic Devices Business Headquarters All copy rights are reserved. 22
-1000 -500 0 500 1000
-1x10
-3
-5x10
-4
0
5x10
-4
1x10
-3
RB-IGBT
(GE short)
Tj=25
o
C
Conventional NPT-IGBT
(V
GE
=+15V)
RB-IGBT
RB-IGBT (V
GE
=+15V)


I
C

(
A
)
V
CE
(V)
Blocking voltage
Forward -> <- Reverse
Blocking voltage characteristics of RB-IGBT
Electronic Devices Business Headquarters All copy rights are reserved. 23
E
o
f
f
(
m
J
)

@
T
j
=
1
2
5
d
e
g
CIGBT + FWD
600V/100A device
RB-IGBT
Vce(sat) @Tj=125degC
E
o
f
f
(
m
J
)

@
T
j
=
1
2
5
d
e
g
CIGBT + FWD
600V/100A device
RB-IGBT
Vce(sat) @Tj=125degC
Trade-off relationship for RB-IGBT
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The switching waveforms of RB-IGBT
Condition:
T3 switching T1-FWD recovery mode
Tj=RT, Vcc2=400V, Ic=300A, RG=+8.2/-39ohm
VGE(T3)=+/-15V, VGE(T4)=+15V,
snubber=1.84uF, Ls=34nH
Condition:
T1 switching T4 RB-IGBT recovery mode
Tj=RT, Vcc2=400V, Ic=300A, RG=+10ohm
VGE(T1)=+/-15V, VGE(T4)=+15V,
snubber=1.84uF, Ls=34nH
Turn-on
VGE: 10V/div
VCE: 100V/div
IC: 100A/div
t: 200ns/div
VCE
IC
VGE
Turn-off
VGE: 10V/div
VCE: 100V/div
IC: 100A/div
t: 500ns/div
VGE
VCE
IC
Riverse-
recovery
VCE: 100V/div
IC: 100A/div
t: 200ns/div
IC
VCE
IC
Riverse-
recovery
VCE: 100V/div
IC: 100A/div
t: 500ns/div
VCE
IC
Fuji RB-IGBT can be realized of fast switching operation same as normal IGBT and FWD.
Electronic Devices Business Headquarters All copy rights are reserved. 25
RB-IGBT Turn-On, Turn-OFF measurement Circuit
P
U
N
+
M
T4
VGE = +15V
T3
T1
VGE = -15V
T2
VGE = -15V
1.8uF
Vcc2
Ls=34nH
M403
400V
Ic
Vce
Wiring Inductance
Electronic Devices Business Headquarters All copy rights are reserved. 26
P
U
N
+
M
T2
VGE = -15V
1.8uF
Vcc2
Ls=34nH
T3
VGE = -15V
T4
VGE = +15V
T1
Wiring Inductance
M403
400V
Ic
Vce
RB-IGBT Reverse Recovery measurement Circuit
Electronic Devices Business Headquarters All copy rights are reserved. 27
Mechanism of RB-IGBT Leakage current
p
+
n
-
p
+
Collector

Emitter

Reverse VoltageVce
n
+
Electron
Hole
Hole
Gate

Mechanism at reverse voltage
Generation of hole at Reverse voltage area

Electron flow through the emitter area

This electron is base current of PNP transistor

Generation of Hole at P-layer

Generation of Large leakage current
Reverse voltage area
Electronic Devices Business Headquarters All copy rights are reserved. 28
Reduction method of Leakage current
(i) G-E short
(ii) V
GE
=+15V
n
+
Channel
Electron flows the n+ of Emitter
Not generation of Hole
pn diode operation
Small Leakage current
p
+
n
-
p
+
Reverse volgate
n
+
Electron
Hole p
+
n
-
p
+
Collector

Emitter

Base

Reverse Voltage
n
+
pnp Base Open
Generation of hole from emitter
Large Leakage current
Electron
Hole
Hole
Gate

Electronic Devices Business Headquarters All copy rights are reserved. 29
When RB-IGBT uses the FWD mode, please input the Vge = +15V.
Because the Leakage current of RB-IGBT is larger when the Vge=0V.
RB-IGBT leakage current can be reduced with Vge=+15V.

T1
T2
T4
T3
P
U
N
M
=

Io
Vge=+15V
T4 Gate
T2 Gate
T3 Gate
-10V
-10V
+15V
+15V
+15V
-10V
When T3 uses the FWD mode,
please input the Vge = +15V of T3.
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12 in 1, 100A type module
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Comparison of Device Loss (12in1 module 100A Type)
Conditions:
20kVA Inverter
AC 400V, Io=30A, cos=0.9
Vdc=700V(350V+350V)
Modulation rate =0.8
Tj=125C, Rg=datasheet value
2-Level: 7MBR100VN120-50
NPC 3-level: 7MBR100VZ060-50
A-NPC 3-level : 12MBI100VN-120-50
0
50
100
150
200
250
0 5 10 15 20 25 30 35 40
Carrier Frequency Hz
P
o
w
e
r

D
i
s
s
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p
a
t
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o
n

2Level
NPC 3-Level
Advanced 3-Level
RB-IGBT
100A Type switching loss is same level of NPC 3level.
The Total loss of 100A Type A-3level is the smallest in all the frequency
ranges.
There is no crossing point.

Electronic Devices Business Headquarters All copy rights are reserved. 32
Notes
1. This technical note contains the product specifications, characteristics, data, materials, and
structures as of January2012.
The contents are subject to change without notice for specification changes or other reasons.
When using a product listed in this Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only.
No right or license, either express or implied, under any patent, copyright, trade secret or other
intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted.
Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the
infringement or alleged infringement of other's intellectual property rights which may arise from the use of the
applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of
semiconductor products may become faulty. When using Fuji Electric semiconductor products in your
equipment, you are requested to take adequate safety measures to prevent the equipment from causing a
physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this technical note are intended for use in the following electronic and electrical
equipment which has normal reliability requirements.
Computers OA equipment Communications equipment (terminal devices) Measurement equipment
Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial
robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for
the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When
using these products for such equipment, take adequate measures such as a backup system to prevent the
equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
Transportation equipment (mounted on cars and ships) Trunk communications equipment
Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature
Emergency equipment for responding to disasters and anti-burglary devices Safety devices
Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and
equivalents to strategic equipment (without limitation).
Space equipment Aeronautic equipment Nuclear control equipment
Submarine repeater equipment
7. Copyright 1996-2012 by Fuji Electric Co., Ltd. All rights reserved.
No part of this technical note may be reproduced in any form or by any means without the express permission
of Fuji Electric Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not
in accordance with instructions set forth herein.