M

VN750SM
HIGH SIDE DRIVER

TYPE VN750SM
I

RDS(on) 55 m

IOUT 6A

VCC 36 V

CMOS COMPATIBLE INPUT I ON STATE OPEN LOAD DETECTION I OFF STATE OPEN LOAD DETECTION I SHORTED LOAD PROTECTION I UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN I PROTECTION AGAINST LOSS OF GROUND I VERY LOW STAND-BY CURRENT
I

SO-8

ORDER CODES
PACKAGE TUBE VN750SM T&R VN750SM13TR

REVERSE BATTERY PROTECTION (*)

SO-8 DESCRIPTION The VN750SM is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protect the device against overload. The device detects open load condition both in on and off state. The openload threshold is aimed at BLOCK DIAGRAM

detecting the 5W/12V standard bulb as an openload fault in the on state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection.

VCC

VCC CLAMP

OVERVOLTAGE DETECTION UNDERVOLTAGE DETECTION

GND Power CLAMP

INPUT LOGIC

DRIVER OUTPUT CURRENT LIMITER

STATUS

ON STATE OPENLOAD DETECTION OVERTEMPERATURE DETECTION

OFF STATE OPENLOAD AND OUTPUT SHORTED TO VCC DETECTION

(*) See application schematic at page 8

July 2002

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VN750SM
ABSOLUTE MAXIMUM RATING
Symbol VCC - VCC - Ignd IOUT - IOUT IIN ISTAT Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT VESD - STATUS - OUTPUT - VCC Maximum Switching Energy (L=1.3mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=10A) Power Dissipation TC=25C Junction Operating Temperature Storage Temperature Value 41 - 0.3 - 200 Internally Limited -6 +/- 10 +/- 10 4000 4000 5000 5000 90 4.2 Internally Limited - 55 to 150 Unit V V mA A A mA mA V V V V mJ W C C

EMAX Ptot Tj Tstg

CONNECTION DIAGRAM (TOP VIEW)

VCC OUTPUT OUTPUT VCC

N.C. STATUS INPUT GND

CURRENT AND VOLTAGE CONVENTIONS

IS

IIN INPUT ISTAT STATUS

VCC
IOUT OUTPUT GND VCC

VIN VSTAT IGND

VOUT

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VN750SM
THERMAL DATA
Symbol Rthj-lead Rthj-amb Parameter Thermal Resistance Junction-lead Thermal Resistance Junction-ambient

Max Max

Value 30 93 (*)

Unit C/W C/W

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35m thick) connected to all VCC pins. Horizontal mounting and no artificial air flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40C<Tj<150C unless otherwise specified) POWER

Symbol VCC VUSD VUSDhyst VOV RON Parameter Operating Supply Voltage Undervoltage Shut-down Undervoltage Shut-down Hysteresis Overvoltage Shut-down On State Resistance Test Conditions Min 5.5 3 Typ 13 4 0.5 36 IOUT=2A; Tj=25C; VCC>8V IOUT=2A; VCC>8V Off State; VCC=13V; VIN=VOUT=0V IS Supply Current Off State; VCC=13V; VIN=VOUT=0V; Tj=25C On State; VCC=13V; VIN=5V; IOUT=0A IL(off1) IL(off2) IL(off3) IL(off4) Off State Output Current Off State Output Current Off State Output Current Off State Output Current VIN=VOUT=0V VIN=0V; VOUT=3.5V VIN=VOUT=0V; Vcc=13V; Tj =125C VIN=VOUT=0V; Vcc=13V; Tj =25C 0 -75 10 10 2 55 110 25 20 3.5 50 0 5 3 Max 36 5.5 Unit V V V V m m A A mA A A A A

SWITCHING (VCC=13V)
Symbol td(on) td(off) Parameter Turn-on Delay Time Turn-off Delay Time Test Conditions RL=6.5 from VIN rising edge to VOUT=1.3V RL=6.5 from VIN falling edge to VOUT=11.7V RL=6.5 from VOUT=1.3V to VOUT=10.4V RL=6.5 from VOUT=11.7V to VOUT=1.3V Min Typ 40 30 See relative diagram See relative diagram Max Unit s s V/s

dVOUT/dt(on) Turn-on Voltage Slope

dVOUT/dt(off) Turn-off Voltage Slope

V/s

INPUT PIN
Symbol VIL IIL VIH IIH VI(hyst) VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage Test Conditions VIN=1.25V VIN=3.25V IIN=1mA IIN=-1mA 0.5 6 6.8 -0.7 Min 1 3.25 10 8 Typ Max 1.25 Unit V A V A V V V

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VN750SM
ELECTRICAL CHARACTERISTICS (continued) VCC - OUTPUT DIODE
Symbol VF Parameter Forward on Voltage Test Conditions -IOUT=2A; Tj=150C Min Typ Max 0.6 Unit V

STATUS PIN
Symbol VSTAT ILSTAT CSTAT VSCL Parameter Test Conditions Status Low Output Voltage ISTAT=1.6mA Status Leakage Current Normal Operation; VSTAT=5V Status Pin Input Normal Operation; VSTAT=5V Capacitance ISTAT=1mA Status Clamp Voltage ISTAT=-1mA Min Typ Max 0.5 10 100 6 6.8 -0.7 8 Unit V A pF V V

PROTECTIONS
Symbol TTSD TR Thyst tSDL Ilim Vdemag Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status delay in overload condition Current limitation Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 15 20 6 5.5V<VCC<36V IOUT=2A; VIN=0V; L=6mH 10 12 12 VCC-41 VCC-48 VCC-55 Max 200 Unit C C C s A A V

Tj>TTSD

OPENLOAD DETECTION
Symbol IOL tDOL(on) Parameter Openload ON State Detection Threshold Openload ON State Detection Delay Openload OFF State Voltage Detection Threshold Openload Detection Delay at Turn Off Test Conditions VIN=5V IOUT=0A Min 0.6 Typ 0.9 Max 1.2 200 Unit A s

VOL tDOL(off)

VIN=0V

1.5

2.5

3.5

V s

1000

OPEN LOAD STATUS TIMING (with external pull-up) IOUT< IOL VOUT > VOL VIN VIN

OVER TEMP STATUS TIMING Tj > TTSD

VSTAT

VSTAT

tDOL(off)

tDOL(on)

tSDL

tSDL

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VN750SM

Switching time Waveforms

VOUT 90% 80%

dVOUT/dt(on)

dVOUT/dt(off)

10% t VIN

td(on)

td(off)

TRUTH TABLE
CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL INPUT L H L H H L H L H L H L H L H OUTPUT L H L X X L L L L L L H H L H STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H L H H L

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VN750SM
ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN
ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E I -25 V +25 V -25 V +25 V -4 V +26.5 V II -50 V +50 V -50 V +50 V -5 V +46.5 V TEST LEVELS III -75 V +75 V -100 V +75 V -6 V +66.5 V TEST LEVELS RESULTS II III C C C C C C C C C C E E IV -100 V +100 V -150 V +100 V -7 V +86.5 V Delays and Impedance 2 ms 10 0.2 ms 10 0.1 s 50 0.1 s 50 100 ms, 0.01 400 ms, 2

I C C C C C C

IV C C C C C E

CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.

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VN750SM
Figure 1: Waveforms

NORMAL OPERATION INPUT LOAD VOLTAGE STATUS UNDERVOLTAGE VUSDhyst VUSD INPUT LOAD VOLTAGE STATUS undefined

VCC

OVERVOLTAGE VCC<VOV VCC INPUT LOAD VOLTAGE STATUS OPEN LOAD with external pull-up INPUT LOAD VOLTAGE STATUS VOUT>VOL VOL VCC>VOV

OPEN LOAD without external pull-up INPUT LOAD VOLTAGE STATUS

Tj INPUT LOAD CURRENT STATUS

TTSD TR

OVERTEMPERATURE

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VN750SM
APPLICATION SCHEMATIC
+5V

+5V

Rprot STATUS

VCC

Dld C Rprot INPUT OUTPUT

GND

VGND

RGND

DGND

GND PROTECTION REVERSE BATTERY

NETWORK

AGAINST

Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND 600mV / (IS(on)max). 2) RGND (VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the devices datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1k) should be inserted in parallel to DGND if the device will be driving an inductive load.

This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table.

C I/Os PROTECTION:
If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot ) in line to prevent the C I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of C and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -VCCpeak/Ilatchup Rprot (VOHC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup 20mA; VOHC 4.5V 5k Rprot 65k. Recommended Rprot value is 10k.

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VN750SM
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up resistor (RPU) connected between OUTPUT pin and a positive supply voltage (VPU) like the +5V line used to supply the microprocessor. The external resistor has to be selected according to the following requirements: 1) no false open load indication when load is connected: in this case we have to avoid VOUT to be higher than VOlmin; this results in the following condition VOUT=(VPU/(RL+RPU))RL<VOlmin. 2) no misdetection when load is disconnected: in this case the VOUT has to be higher than VOLmax; this results in the following condition RPU<(VPUVOLmax)/ IL(off2). Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pull-up resistor RPU should be connected to a supply that is switched OFF when the module is in standby. The values of VOLmin, VOLmax and IL(off2) are available in the Electrical Characteristics section.

Open Load detection in off state

V batt.

VPU

VCC RPU INPUT DRIVER + LOGIC OUT + R STATUS VOL RL IL(off2)

GROUND

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VN750SM
Off State Output Current
IL(off1) (uA)
3 2.5 2 1.5 4 1 3 0.5 0 -0.5 -1 -50 -25 0 25 50 75 100 125 150 175 2

High Level Input Current

Iih (uA)
7

Off state Vcc=36V Vin=Vout=0V

Vin=3.25V
5

0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Input Clamp Voltage

Vicl (V)
8 7.8

Status Leakage Current

Ilstat (uA)
0.05

Iin=1mA
7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175 0.01 0.02 0.03 0.04

Vstat=5V

Tc (C)

Tc (C)

Status Low Output Voltage

Vstat (V)
0.6

Status Clamp Voltage

Vscl (V)
8 7.8

0.5

Istat=1mA
7.6

Istat=1.6mA
0.4 7.4 7.2 0.3 7 6.8 0.2 6.6 6.4 6.2 0 -50 -25 0 25 50 75 100 125 150 175 6 -50 -25 0 25 50 75 100 125 150 175

0.1

Tc (C)

Tc (C)

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VN750SM
On State Resistance Vs. Tcase
Ron (mOhm)
140

On State Resistance Vs. VCC

Ron (mOhm)
120 110

120

100

Iout=2A Vcc=8V; 13V; 36V

Iout=2A
100

Tc= 150C
90 80

80

Tc= 125C
70 60 50

60

40

Tc= 25C
40 20 30 0 -50 -25 0 25 50 75 100 125 150 175 20 5 10 15 20 25 30 35 40

Tc= - 40C

Tc (C)

Vcc (V)

Openload On State Detection Threshold

Iol (A)
1.2 1.15 1.1 1.05 1

Input High Level

Vih (V)
3.6 3.4 3.2 3

Vcc=13V Vin=5V

0.95 0.9 0.85 2.6 0.8 0.75 0.7 2.2 0.65 0.6 -50 -25 0 25 50 75 100 125 150 175 2 -50 -25 0 25 50 75 100 125 150 175 2.4 2.8

Tc (C)

Tc (C)

Input Low Level

Vil (V)
2.8 2.6 2.4 2.2 2

Input Hysteresis Voltage

Vhyst (V)
1.5 1.4 1.3 1.2 1.1 1

1.8 0.9 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

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VN750SM
Overvoltage Shutdown
Vov (V)
50 48 46 4 44 42 40 38 36 2 34 32 30 -50 -25 0 25 50 75 100 125 150 175 1.5 1 -50 -25 0 25 50 75 100 125 150 175 3.5 3 2.5

Openload Off State Voltage Detection Threshold

Vol (V)
5 4.5

Vin=0V

Tc (C)

Tc (C)

Turn-on Voltage Slope

dVout/dt/(on) (V/ms)
1000 900 800 700 600 500 400 300 200 100 0 -50 -25 0 25 50 75 100 125 150 175

Turn-off Voltage Slope

dVout/dt(off) (V/ms)
500 450

Vcc=13V Rl=6.5Ohm

400 350 300 250 200 150 100 50 0 -50 -25

Vcc=13V Rl=6.5Ohm

25

50

75

100

125

150

175

Tc (C)

Tc (C)

Ilim Vs. Tcase

Ilim (A)
20 18

Vcc=13V
16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

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VN750SM
Maximum turn off current versus load inductance

ILMAX (A) 100

10
A B C

1 0.1 1 L(mH)
A = Single Pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive Pulse at TJstart=125C Conditions: VCC=13.5V Values are generated with RL=0 In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL Demagnetization Demagnetization Demagnetization

10

100

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VN750SM

SO-8 THERMAL DATA

SO-8 PC Board

Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, Cu thickness=35m, Copper areas: 0.14cm2, 2cm2).

Rthj-amb Vs PCB copper area in open box free air condition

RTHj_amb (C/W)

SO8 at 2 pins connected to TAB

110 105 100 95 90 85 80 75 70 0 0.5 1 1.5 2 2.5

PCB Cu heatsink area (cm^2)

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VN750SM
SO-8 Thermal Impedance Junction Ambient Single Pulse

ZTH (C/W) 1000

100

0.5 cm2 2 cm2

10

0.1

0.01 0.0001 0.001 0.01 0.1 1 Time (s) 10 100 1000

Thermal fitting model of a single channel HSD in SO-8

Pulse calculation formula

Z TH = R TH + Z THtp ( 1 )
where

= tp T
0.5 0.05 0.8 3.5 21 16 58 0.006 2.60E-03 0.0075 0.045 0.35 1.05 2

Thermal Parameter
Area/island (cm2) R1 (C/W) R2 (C/W) R3 ( C/W) R4 (C/W) R5 (C/W) R6 (C/W) C1 (W.s/C) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C)

Tj

C1

C2

C3

C4

C5

C6

R1

R2

R3

R4

R5

R6

Pd

28

T_amb

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VN750SM

SO-8 MECHANICAL DATA

mm. MIN. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 1.27 3.81 3.8 0.4 4 1.27 0.6 8 (max.) 0.8 1.2 0.031 0.047 0.14 0.015 TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5 6.2 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019

DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S L1

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VN750SM
SO-8 TUBE SHIPMENT (no suffix)

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)

All dimensions are in mm.

100 2000 532 3.2 6 0.6

TAPE AND REEL SHIPMENT (suffix 13TR) REEL DIMENSIONS

Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 12 4 8 1.5 1.5 5.5 4.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VN750SM

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

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