Vous êtes sur la page 1sur 10
SRN.KEN ELECTRIC COMPANY, LTD, SANKlDl SWJ’KtIIlVG 1UWLAlOR HYRRTD lC Type: STR-S6301 1. The present
SRN.KEN
ELECTRIC
COMPANY,
LTD,
SANKlDl SWJ’KtIIlVG 1UWLAlOR HYRRTD lC
Type:
STR-S6301
1.
The present specifications shall only apply to &Sanken SwitchinR Regulator Ilybrjd IC, type
STR-S6301.
2.
General
2.1 Category :
Hybrid JC incorporated with a S-layer Silkon Transistor,
.
2.2 Construction:
Plastic Mold Package (‘kansfer Mold) _
.
2.3 Applicat,ion:
Dire& control., RLC. type Swjtching RcguJator featuring Drjve
Circuit and the Over Current Protecljon. (using Photo Couplerb as
pri nrarykccondary isolation element,)
3.
FTuivalent Circuit
Trl
1.Cogxtor
i. !;h&
ter/bnmon (Power Tr . >
4:
-
Drj ve Control
J
5.
6. Current Detectm Base
7,EartWCurrent
Detector
8 .lkive Tr2 Base
9 .YhoLo Coupler (-)
4.
hw33rance and Outline
4 . 1.
Appearance
‘J’he MY shall be clean and
shall
not bear any stiin, rust or flaw,
4.2 Outline Drawings
Refer to PaEe 9,
4.3 Marking
The type number and lot number shall be legitimat~.ly be marked by laser printing;,
Refer to Page 9.
Date:
DecL 16,
1991
Specifhtion NO.:
SW- 17J_7OE
1/Y
5, Maxhe Ratings (T&5r) .P --. ---- -I- - -. _--- -VP I .-Be I
5, Maxhe Ratings (T&5r) .P --. ---- -I- - -. _--- -VP I .-Be I
5, Maxhe
Ratings (T&5r)
.P --. ----
-I-
-
-.
_---
-VP I
.-Be
I
.--
-
Unit
--~;;;&y--;;--~-
.-_-. DescripEion
Symbol
liat.i ng
.- ----.
_
-“-
---
- ------
.”
.
-
.
.
.
_
.
.
.
.
.
.
.
I,
Trl Colhc tor4hi ttor Voltage
hx?%
500
V
XI
---v-.b.---
--I*- _-
-.a*
. w-w--.
,
--.
--.
Ph# 4-2 Applying Voktage -A-B
-
12
v
.
.--_-- ,.--
.-L-P-, v2-d
.-_-- - -
.-- -.
---
1,,---WC_
Pin!!
Z-5 Applying
Vol tage
Vz- s
12
v
*
I-_s
---
---.
-.
G-s--
--*-
-.-A.--_-. - ---- _-
.--- --p-L
Yin# 5-8 Applying Voltage
Vs- 4
30
v
-Y-B--.
_-
a.
-
P.i.n# 7-6 Applying Voltage
5
V
v7- 6
-
--
---- -*de--
-
-
-
_-.--.
-
-.
.
.
_
.
_
.
I
.
--I*
--
.-
.
-
-.-
.
m
. e-q
.
I
Tr 1 COJ. lector Current
~(-II~LI
1O(Pulse:20)
A
%2
-
_P -
------.
Tr4 Collector Current
brr4 I
500
rnA-
.I_-
.
_Y
---
D2 Forward Current
mA
ZYNfD2)
500
-
-
--
--I.
.-
-
---.I.--.
Da Forward Current
I INtD3)
100
RIA
--,
_
-.
_
I--
3.2
No fin
F3
_--.
_-
--“l”----r, ----.
Max. Power Did paI.ion
F’D
W
X3 I-_
2.7
T, r=lOO”C
-P-~--P”.
-_--I
Trl Junction Temperature
L
+I50
"C
/
-
-
-up-
-.-_
Frame Temperature (Operating)
Tc2
%1
.-h
-
-.
.
,
---
Storage Tempmature
T atIs
-30
-
+125 *c
-. ---
-_-.-
----_ Max. 011 tput Curren I;
10
1.7
Vo
=115V
%5
_-
-----_q
- A
--I
8. bctrical Characterist.ic
(T&!iV)
Trl
Characteristic
-.-_P
-
.--C
v
----.
Description
Symb0.I
Ratings
Unit
Conditions
---- -WI-.
_- -
-
--
_I
--.-------
--
Cdlector
Saturation
Vollage .--- VCatSATI
0.5 Max.
V
1c
=6A,
I,=I.2A
*-
-- L-p--
_--
.
.
------_---~_-~
1-w-.-
COllectOr Cut-Off Current
ICEX
1.0
Mm,
VcE=.soov,
vrse
=-I
,sv
‘-4-m-p -
,
mA
.7_
m-m-_
_--
Rase-Emitter Sahraticjn Volt;
VDe (3ATj
1.5 Max.
+
Ic
=fiA,
--_ Jn=1.2A
I,
--- _
-I-.
-.
_-_-
WI_
_---
1
.
. -
IX: Current - Gain
--P 15-40
VCE=/IV,
Tc=lA
-
.--I-
--,--
.--.- he --
-
Resistance
0.7
--.
Junction--Internal -- - .-- ,
- --_
Thermal
LCZ
“C/W
Frame
--.--- .P -_
_--
----
--
--_-
-
-_,
L
10 Max.
vs Measuring Circuit #I
tr
.-
Swi tchi nB Time
<-. --.- -I-, _-
P*-
--
I
-.- 0.6 Max. -----
---.
.-
- --a
vs Measuring Circuit #I tr .- Swi tchi nB Time <-. --.- -I-, _- P*- --
vs Measuring Circuit #I tr .- Swi tchi nB Time <-. --.- -I-, _- P*- --
2) Suggedd Sikone Grease: C-746 WTN-ETSU CIKMITAlS YG6260 TUSIIT~A SIIJCON~ SW?2 I’ORAY SILICONE 8. Other
2) Suggedd Sikone Grease: C-746 WTN-ETSU CIKMITAlS YG6260 TUSIIT~A SIIJCON~ SW?2 I’ORAY SILICONE 8. Other

2) Suggedd Sikone Grease: C-746

WTN-ETSU CIKMITAlS YG6260 TUSIIT~A SIIJCON~ SW?2 I’ORAY SILICONE
WTN-ETSU
CIKMITAlS
YG6260 TUSIIT~A SIIJCON~
SW?2 I’ORAY
SILICONE

8. Other Conditions

SIIJCON~ SW?2 I’ORAY SILICONE 8. Other Conditions l.)This product is designed and built, for It is

l.)This product is designed and built, for It is susceptible tokhe rad.iation.

and built, for It is susceptible tokhe rad.iation. use under the normal environment. 2)AS ‘$j.s PrC$Ct

use under the normal

It is susceptible tokhe rad.iation. use under the normal environment. 2)AS ‘$j.s PrC$Ct is recomized as

environment.

2)AS ‘$j.s PrC$Ct is recomized
2)AS ‘$j.s PrC$Ct is recomized

as the

Strategic

Material

2)AS ‘$j.s PrC$Ct is recomized as the Strategic Material which is un&p control of I& Iradc
2)AS ‘$j.s PrC$Ct is recomized as the Strategic Material which is un&p control of I& Iradc

which is un&p control of

as the Strategic Material which is un&p control of I& Iradc & LJWrt Law, an export

I& Iradc & LJWrt Law, an export khxmce

for

exportation,

control of I& Iradc & LJWrt Law, an export khxmce for exportation, granted bi the govern-t

granted bi the govern-t j,s r&uj,ed

control of I& Iradc & LJWrt Law, an export khxmce for exportation, granted bi the govern-t
V OUT 0 , / 1 Rc 1 1 * 1 I I I I
V OUT
0
, /
1
Rc
1
1
*
1
I
I
I
I
I
Da lx! :
Speci.f’.i~lion
No. :
Measuring circuit, (Svitching time) 2ops Rz -bBl a GND C Base Current ---I- _Lt 432
Measuring circuit, (Svitching time) 2ops Rz -bBl a GND C Base Current ---I- _Lt 432

Measuring circuit, (Svitching time)

2ops Rz -bBl a GND C
2ops
Rz
-bBl a
GND C

Base Current

---I-
---I-

_Lt 432

IBZ

F k 1
F
k
1

x se

~llector Current

I . 90% I : ‘ON
I
.
90%
I
:
‘ON

tb-

o-

- = 2&6n
-
=
2&6n
Ic =
Ic
=

3.5

A

Rr,

,

h=800mA , 182
h=800mA
,
182

=80CI mA

90% I : ‘ON tb- o- - = 2&6n Ic = 3.5 A Rr, , h=800mA
Dir Le :
Dir Le :

kc.

18,

1991

Speci f icatioll No. I

Speci f icatioll No. I

7 7

0

I

Dir Le : kc. 18, 1991 Speci f icatioll No. I 7 0 I ’ r

rr/sl

b.- 0
b.-
0

SANKEN

ELECTRIC

COMPANY,

LTD.

2

H

cl

2 H cl 4-l STR-S6301 Reverse Bias A-S-0. curve h=100 p.sec (duky : 1% or less

4-l

STR-S6301

Reverse Bias A-S-0. curve

h=100 p.sec (duky : 1% or less

no fin natural cooling

(Ta=Z!YC

6 mtl, Iel =3.&i, Iee =0.5A

natural cooling (Ta=Z!YC 6 mtl, Iel =3.&i, Iee =0.5A I / 100 200 300 4 0
I /
I /
I /
I /
I /
I /
I /
I /
I /
I /
I /
I /

I

I /
I /
I /
I /
I /
I /

/

100

200

300

400

SOrJ
SOrJ

600

0.1 0

Collector-Emitter

vohge V,, (V)

SSIFl.7170E
SSIFl.7170E
/ 100 200 300 4 0 0 SOrJ 6 0 0 0 . 1 0 Collector-Emitter
/ 100 200 300 4 0 0 SOrJ 6 0 0 0 . 1 0 Collector-Emitter
7/9
7/9

L q

L q
L q

Date:

kc, 16, 1991

Date: kc, 16, 1991 Spmzihation No. :

Spmzihation No. :

SANKEN ELECTR 1 C COMPANY, LTU- STR-S6000 series derating curve 5- S - i.- 0
SANKEN ELECTR 1 C COMPANY,
LTU-
STR-S6000 series derating curve
5-
S
-
i.-
0
20
46
6 0
8
0
100
125
Ambht tzmperatwe
Ta
(“Cl
Dale:
rl=.
IG,
1991
Spet5fication No. :
sm- 1 7 1 7 0 E.':
B/9
I
SANKEN COMPANY. L T D . digit of AD y-1 Sept. ELECTRIC unit : mm
SANKEN COMPANY. L T D . digit of AD y-1 Sept. ELECTRIC unit : mm
SANKEN
SANKEN

COMPANY.

SANKEN COMPANY. L T D . digit of AD y-1 Sept. ELECTRIC unit : mm 1

LTD.

digit of AD y-1

Sept.

ELECTRIC

SANKEN COMPANY. L T D . digit of AD y-1 Sept. ELECTRIC unit : mm 1

unit

: mm
: mm
1
1
L T D . digit of AD y-1 Sept. ELECTRIC unit : mm 1 123456709 (1)

123456709

D . digit of AD y-1 Sept. ELECTRIC unit : mm 1 123456709 (1) Part Number

(1) Part Number : S6301

ELECTRIC unit : mm 1 123456709 (1) Part Number : S6301 (2) Lut Number : 1st

(2) Lut Number :

1 123456709 (1) Part Number : S6301 (2) Lut Number : 1st digit : The last

1st digit : The last 2nd digit : yonth

5
5

3rd & 4th

digits

9 : Jan, - :OclLokr N n
9
: Jan,
-
:OclLokr
N
n

5 November

; December

date

01 - 31
01 -
31
: The
: The

*I :The lead center is offset

*2 :The dimension

measured at the

lead center is offset *2 :The dimension measured at the Dec. 16, 1991 by 0.4m hxn
Dec. 16, 1991
Dec. 16, 1991

by 0.4m hxn the center of the package. closest point to the My.

Date:

Specification No.:

SSE-'L7170E
SSE-'L7170E
g/9
g/9

This datasheet has been downloaded from:

Datasheets for electronic components.