BC817-25 / BC817-40

Discrete POWER & Signal Technologies

BC817-25 BC817-40
C

SOT-23
Mark: 6B. / 6C.

NPN General Purpose Amplifier

This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38.

Absolute Maximum Ratings*

Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
45 50 5.0 1.5 -55 to +150

Units
V V V A C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient

Max
*BC817-25 / BC817-40 350 2.8 357

Units
mW mW/ C C/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

BC817-25 / BC817-40

NPN General Purpose Amplifier

(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CES V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 mA, IB = 0 IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 20 V VCB = 20 V, TA = 150C 45 50 5.0 100 5.0 V V V nA A

ON CHARACTERISTICS
hFE DC Current Gain IC = 100 mA, VCE = 1.0 V - 25 - 40 IC = 500 mA, VCE = 1.0 V IC = 500 mA, I B = 50 mA IC = 500 mA, VCE = 1.0 V 160 250 40 400 600 0.7 1.2 V V

VCE( sat) VBE( on)

Collector-Emitter Saturation Voltage Base-Emitter On Voltage

Typical Characteristics

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

Typical Pulsed Current Gain vs Collector Current

V CE = 5V
125 C 25 C

Collector-Emitter Saturation Voltage vs Collector Current

0.6 0.5 0.4 0.3 0.2 0.1 0 0.01
- 40 C 25C 125 C

500 400 300 200

- 40 C

= 10

100 0 0.001 I
C-

0.01 0.1 COLLECTOR CURRENT (A)

0.1 1 I C - COLLECTOR CURRENT (A)

P 38

BC817-25 / BC817-40

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

VBE(ON) - BASE-EMITTER ON VOLTAGE (V)

VBE(ON) - BASE-EMITTER ON VOLTAGE (V)

Base-Emitter ON Voltage vs Collector Current

Base-Emitter ON Voltage vs Collector Current

1

0.8

- 40 C 25C

0.8

- 40 C 25C

0.6
125 C

0.6
125 C

0.4

VCE = 5V
0.01 0.1 C - COLLECTOR CURRENT (A)
P 38

0.4

VCE = 5V
0.01 0.1 I C - COLLECTOR CURRENT (A)
Pr38

0.2 0.001 I

0.2 0.001

C OBO - COLLECTOR-BASE CAPACITANCE (pF)

Collector-Cutoff Current vs Ambient Temperature

I CBO - COLLECTOR CURRENT (nA) 100
VCB = 40V

Collector-Base Capacitance vs Collector-Base Voltage

40

10

30

20

0.1

10

25

50 75 100 125 T A - AMBIENT TEMPERATURE (C)

150

0 0 4 8 12 Pr 38 16 20 24 28

V CB - COLLECTOR-BASE VOLTAGE (V)

h FE - GAIN BANDWIDTH PRODUCT (MHz)

Gain Bandwidth Product vs Collector Current

V CE = 10V 400 300 200 100 0
P D - POWER DISSIPATION (mW)

Power Dissipation vs Ambient Temperature

350 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE (o C) 125 150

500

SOT-23

10 100 I C - COLLECTOR CURRENT (mA)

1000