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DMG1016V

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET


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Features
Low On-Resistance Low Gate Threshold Voltage VGS(th) <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protected Gate to 2.5kV HBM "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data
Case: SOT-563 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 7 Ordering Information: See Page 7 Weight: 0.006 grams (approximate)

NEW PRODUCT

SOT-563

D1

G2

S2

Q1

Q2

S1

G1

D2

ESD PROTECTED TO 2.5kV HBM

TOP VIEW

BOTTOM VIEW

TOP VIEW Internal Schematic

Maximum Ratings N-CHANNEL Q1


Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1)

@TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 85C ID Value 20 6 870 630 Unit V V mA

Maximum Ratings P-CHANNEL Q2


Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1)

@TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 85C ID Value -20 6 -640 -460 Unit V V mA

Thermal Characteristics

@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 530 235 -55 to +150 Unit mW C/W C

Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes:

1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Diodes Inc.s Green policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DMG1016V
Document number: DS31767 Rev. 3 - 2

1 of 8 www.diodes.com

May 2009
Diodes Incorporated

DMG1016V

Electrical Characteristics N-CHANNEL Q1


Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Min 20 0.5 Typ 0.3 0.4 0.5 1.4 0.7 60.67 9.68 5.37 736.6 93.6 116.6 5.1 7.4 26.7 12.3 Max 100 1.0 1.0 0.4 0.5 0.7 1.2 Unit V nA A V S V pF pF pF pC Test Condition VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 400mA VGS = 0V, IS = 150mA

NEW PRODUCT

VDS = 16V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA

ns

Electrical Characteristics P-CHANNEL Q2 @TA = 25C unless otherwise specified


Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 4. Short duration pulse test used to minimize self-heating effect.

Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf

Min -20 -0.5

Typ 0.5 0.7 1.0 -0.9 -0.8 59.76 12.07 6.36 622.4 100.3 132.2 5.1 8.1 28.4 20.7

Max -100 2.0 -1.0 0.7 0.9 1.3 -1.2

Unit V nA A V S V pF pF pF pC

Test Condition VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = -250mA VGS = 0V, IS = -150mA

VDS = -16V, VGS = 0V f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -250mA VDD = -10V, VGS = -4.5V, RL = 47, RG = 10, ID = -200mA

ns

DMG1016V
Document number: DS31767 Rev. 3 - 2

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May 2009
Diodes Incorporated

DMG1016V N-CHANNEL Q1
1.0
VGS = 8.0V VGS = 4.5V

1.0

0.8

0.8 ID, DRAIN CURRENT (A)

NEW PRODUCT

ID, DRAIN CURRENT (A)

0.6

VGS = 3.0V VGS = 2.5V VGS = 2.0V

0.6

0.4

VGS = 1.5V

0.4

0.2
VGS = 1.2V

T A = 150C

0.2

TA = 125C

T A = 85C TA = 25C TA = -55C

0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5

0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic

0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.0
VGS = 1.8V VGS = 2.5V VGS = 4.5V

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

0.8

0.5

0.4

TA = 150C T A = 125C TA = 85C

0.3
T A = 25C

0.2
TA = -55C

0.1

0 0 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.2 1.0

1.7

0.8

RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)

1.5 RDSON, DRAIN-SOURCE ON-RESISTANCE () 0.6

1.3

1.1
VGS = 4.5V ID = 500mA

0.4

VGS = 2.5V ID = 250mA

0.9

0.2

VGS = 4.5V ID = 500mA

0.7 0.5 -50

VGS = 2.5V ID = 250mA

-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature

0 -50

-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature

DMG1016V
Document number: DS31767 Rev. 3 - 2

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May 2009
Diodes Incorporated

DMG1016V N-CHANNEL Q1 (continued)


1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V)

1.0

1.2

IS, SOURCE CURRENT (A)

0.8
TA = 25C

NEW PRODUCT

0.6

0.8

ID = 1mA

ID = 250A

0.4

0.4

0.2

0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature

0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2

100
Ciss

1,000
TA = 150C

IDSS, LEAKAGE CURRENT (nA)

C, CAPACITANCE (pF)

100

TA = 125C

10

Coss

C rss

10

T A = 85C

TA = 25C

1 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance


1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3

1
20

4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V)

20

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 260C/W P(pk)

D = 0.02

0.01

D = 0.01 D = 0.005

t1

t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2

D = Single Pulse

0.001 0.00001

0.0001

0.001

0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response

10

100

1,000

DMG1016V
Document number: DS31767 Rev. 3 - 2

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May 2009
Diodes Incorporated

DMG1016V P-CHANNEL Q2
1.0
VGS = -8.0V VGS = -4.5V

1.0
VDS = -5V

NEW PRODUCT

VGS = -3.0V

-ID, DRAIN CURRENT (A)

0.8

0.8

0.6

VGS = -2.5V VGS = -2.0V

0.6

0.4

0.4

0.2

VGS = -1.5V

0.2

T A = 150C TA = 125C TA = 85C T A = 25C TA = -55C

0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic 5

0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristic

3.0

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

1.6 1.4 1.2


VGS = -1.8V

1.0
VGS = -4.5V

0.8
TA = 150C TA = 125C T A = 85C TA = 25C

1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage 1.0
VGS = -2.5V

0.6

0.4
TA = -55C

VGS = -4.5V

0.2

0.4 0.6 0.8 -ID, DRAIN CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature

0.2

1.0

RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)

1.5

RDSON, DRAIN-SOURCE ON-RESISTANCE ()

1.7

1.0

0.8
VGS = -2.5V ID = -250mA

1.3

0.6

1.1
VGS = -4.5V ID = -500mA

0.4

0.9

VGS = -4.5V ID = -500mA

0.7 0.5 -50

VGS = -2.5V ID = -250mA

0.2

-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 16 On-Resistance Variation with Temperature

0 -50

-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 17 On-Resistance Variation with Temperature

DMG1016V
Document number: DS31767 Rev. 3 - 2

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May 2009
Diodes Incorporated

DMG1016V P-CHANNEL Q2 (continued)


1.6 -VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.0

1.2

-IS, SOURCE CURRENT (A)

0.8
TA = 25C

NEW PRODUCT

0.6

0.8
ID = -250A

ID = -1mA

0.4

0.4

0.2

0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature
100
Ciss

0 0.2

0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current

1,000
T A = 150C

-IDSS, LEAKAGE CURRENT (nA)

C, CAPACITANCE (pF)

100

TA = 125C

10

Coss

Crss

10

TA = 85C

T A = 25C

1 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Total Capacitance 1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3

1 20 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Leakage Current vs. Drain-Source Voltage 20

0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA R JA = 260C/W P(pk) D = 0.01 D = 0.005

D = 0.02

0.01

t1

t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2

D = Single Pulse

0.001 0.00001

0.0001

0.001

0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 22 Transient Thermal Response

10

100

1,000

DMG1016V
Document number: DS31767 Rev. 3 - 2

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Diodes Incorporated

DMG1016V Ordering Information (Note 5)


Part Number DMG1016V-7
Notes:

Case SOT-563

Packaging 3000/Tape & Reel

5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

NEW PRODUCT

Marking Information

CA1

YM

CA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September)

Date Code Key Year Code Month Code

2009 W Jan 1 Feb 2

2010 X Mar 3 Apr 4

2011 Y May 5 Jun 6

2012 Z Jul 7

2013 A Aug 8 Sep 9

2014 B Oct O Nov N

2015 C Dec D

Package Outline Dimensions


A

D G

SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm

H L

Suggested Pad Layout


C2 C2

C1

Y X

Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5

DMG1016V
Document number: DS31767 Rev. 3 - 2

7 of 8 www.diodes.com

May 2009
Diodes Incorporated

DMG1016V

IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

NEW PRODUCT

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 2009, Diodes Incorporated www.diodes.com

DMG1016V
Document number: DS31767 Rev. 3 - 2

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May 2009
Diodes Incorporated