FDMC86240 N-Channel Power Trench MOSFET

July 2010

FDMC86240
N-Channel Power Trench MOSFET
150 V, 16 A, 51 m
Features
Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant

General Description
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application
DC - DC Conversion

Top Pin 1 S S S G

Bottom D D D D D D D 8 1 S 5 6 7 4 3 2 G S S

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 C unless otherwise noted

Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 150 20 16 19 4.6 20 34 40 2.3 -55 to +150 mJ W C A Units V V

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.1 53 C/W

Package Marking and Ordering Information

Device Marking FDMC86240 Device FDMC86240 Package Power 33
1

Reel Size 13

Tape Width 12 mm

Quantity 3000 units

2010 Fairchild Semiconductor Corporation FDMC86240 Rev.C

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FDMC86240 N-Channel Power Trench MOSFET

Electrical Characteristics TJ = 25 C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 120 V, VGS = 0 V VGS = 20 V, VDS = 0 V 150 101 1 100 V mV/C A nA

On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 4.6 A VGS = 6 V, ID = 3.9 A VGS = 10 V, ID = 4.6 A, TJ = 125 C VDS = 10 V, ID = 4.6 A 2.0 2.9 -9 44.7 51.4 84.5 15 51 70 97 S m 4.0 V mV/C

Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 680 79 4.3 0.5 905 105 10 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain Miller Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 75 V, ID = 4.6 A VDD = 75 V, ID = 4.6 A, VGS = 10 V, RGEN = 6 8.2 1.7 14 3.1 11 6 2.8 2.3 17 10 26 10 15 9 ns ns ns ns nC nC nC nC

Drain-Source Diode Characteristics

VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 4.6 A VGS = 0 V, IS = 2 A IF = 4.6 A, di/dt = 100 A/s (Note 2) (Note 2) 0.79 0.75 58 63 1.3 1.2 93 102 V ns nC

NOTES: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design.

53 C/W when mounted on a 1 in2 pad of 2 oz copper

125 C/W when mounted on a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C; N-ch: L = 3 mH, IAS = 4.8 A, VDD = 150 V, VGS = 10 V.

FDMC86240 Rev.C

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FDMC86240 N-Channel Power Trench MOSFET

Typical Characteristics TJ = 25 C unless otherwise noted

20
VGS = 5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V VGS = 5.5 V

3.0
VGS = 4.5 V

ID, DRAIN CURRENT (A)

15

2.5
VGS = 5 V

2.0 1.5 1.0

PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX VGS = 6 V VGS = 10 V VGS = 5.5 V

10
VGS = 4.5 V

5
PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX

0 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V)

0.5 0 5 10 15 20
ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics

Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage

200
SOURCE ON-RESISTANCE (m)

2.2
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

2.0 1.8

ID = 4.6 A VGS = 10 V
rDS(on), DRAIN TO

PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX

150
ID = 4.6 A

1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)

100
TJ = 125 oC

50
TJ = 25 oC

0 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance vs Junction Temperature

20
PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX IS, REVERSE DRAIN CURRENT (A)

Figure 4. On-Resistance vs Gate to Source Voltage

20 10 VGS = 0 V

ID, DRAIN CURRENT (A)

15
VDS = 5 V

1
TJ = 150 oC TJ = 25 oC

10
TJ = 150 oC TJ = 25 oC

0.1

5
TJ = -55 oC

0.01

TJ = -55 oC

0 2 3 4 5 6
VGS, GATE TO SOURCE VOLTAGE (V)

0.001 0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward Voltage vs Source Current

FDMC86240 Rev.C

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FDMC86240 N-Channel Power Trench MOSFET

Typical Characteristics TJ = 25 C unless otherwise noted

10
VGS, GATE TO SOURCE VOLTAGE(V) ID = 4.6 A

2000 1000
Ciss
VDD = 50 V VDD = 100 V CAPACITANCE (pF)

8 6
VDD = 75 V

100
Coss

4 2

10
f = 1 MHz VGS = 0 V

Crss

0 0 2 4 6 8 10 12
Qg, GATE CHARGE(nC)

1 0.1

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain to Source Voltage

20
ID, DRAIN CURRENT (A)

6 5
IAS, AVALANCHE CURRENT(A)

4
TJ = 25 oC

15
Limited by Package VGS = 10 V

3
TJ = 100 oC

10
VGS = 6 V

2
TJ = 125 oC

5
RJC = 3.1 C/W
o

1 0.1

1
tAV, TIME IN AVALANCHE(ms)

10

0 25

50

75

100
o

125

150

TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Switching Capability

30 10
ID, DRAIN CURRENT (A)

Figure 10. Maximum Continuous Drain Current vs Case Temperature

2000 1000

100 us

P(PK), PEAK TRANSIENT POWER (W)

VGS = 10 V

SINGLE PULSE RJA = 125 C/W TA = 25 C

o o

1
THIS AREA IS LIMITED BY rDS(on)

1 ms 10 ms 100 ms 1s 10 s DC

100

0.1

10

SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 oC

0.01 0.005 0.1

10

100

500

1 0.5 -4 10

10

-3

10

-2

10

-1

10

100

1000

VDS, DRAIN to SOURCE VOLTAGE (V)

t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power Dissipation

FDMC86240 Rev.C

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FDMC86240 N-Channel Power Trench MOSFET

Typical Characteristics TJ = 25 C unless otherwise noted

2 1
NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER

0.1

D = 0.5 0.2 0.1 0.05 0.02 0.01

PDM

0.01
SINGLE PULSE RJA = 125 C/W
o

t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA

0.001 0.0005 -4 10 10
-3

10

-2

10

-1

10

100

1000

t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Transient Thermal Response Curve

FDMC86240 Rev.C

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FDMC86240 N-Channel Power Trench MOSFET

Dimensional Outline and Pad Layout

FDMC86240 Rev.C

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FDMC86240 N-Channel Power Trench MOSFET

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPM AccuPower F-PFS * PowerTrench Auto-SPM FRFET SM Build it Now Global Power Resource PowerXS The Power Franchise CorePLUS Programmable Active Droop Green FPS CorePOWER QFET Green FPS e-Series CROSSVOLT Gmax QS TinyBoost CTL GTO Quiet Series TinyBuck Current Transfer Logic IntelliMAX RapidConfigure TinyCalc DEUXPEED ISOPLANAR TinyLogic Dual Cool MegaBuck TINYOPTO EcoSPARK Saving our world, 1mW/W/kW at a time MICROCOUPLER TinyPower EfficentMax SignalWise MicroFET TinyPWM SmartMax ESBC MicroPak TinyWire SMART START MicroPak2 TriFault Detect SPM MillerDrive TRUECURRENT* STEALTH MotionMax Fairchild SerDes SuperFET Motion-SPM Fairchild Semiconductor SuperSOT-3 OptiHiT FACT Quiet Series SuperSOT-6 OPTOLOGIC FACT UHC OPTOPLANAR SuperSOT-8 FAST Ultra FRFET SupreMOS FastvCore UniFET SyncFET FETBench VCX Sync-Lock FlashWriter * PDP SPM VisualMax FPS XS
tm
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tm

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Rev. I48

Preliminary

First Production

No Identification Needed Obsolete

Full Production Not In Production

FDMC86240 Rev.C

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