LOW POWER VLSI On CMOS Submitted by: K.Nagendra Why we go to Low Power.. POR !

"ILI #: Enhan$ed run%time& Redu$ed weight& Redu$ed 'o(ume& Low $o)t o*eration +igh Per,orman$e: Low%$o)t $oo(ing& Low%$o)t *a$-aging& Low%$o)t o*eration RELI!"ILI #: !'oid therma( *rob(em) !'oid )$a(ing re(ated *rob(em)

Where .oe) Power /o In CMOS .ynami$ Power Con)um*tion : Charging and .i)$harging Ca*a$itor) Short Cir$uit Current) : Short $ir$uit *ath between )u**(y rai() during )wit$hing Lea-age: Lea-age diode) and tran)i)tor) Ptota( 0 P.#N 1 PSC 1 PLea-age 0CLV..21V..IPE!K34 r 1 ,567821V.. ILE!K

/(it$hing9: /(it$hing re,er) to )*uriou) and unwanted tran)ition) that o$$ur be,ore a node )ett(e down to it) ,ina( )teady%)tate 'a(ue. /(it$hing o,ten ari)e) when *ath) with unba(an$ed *ro*agation de(ay $on'erge) at the )ame *oint in the $ir$uit. he di))i*ation $au)ed by the )*uriou) tran)ition) $an rea$h u* to 7;< o, the tota( di))i*ation ,or )ome $ir$uit).

Short Cir$uit Current) Short $ir$uit $urrent) are en$ountered on(y in )tati$ de)ign. In )tati$ CMOS $ir$uit) the ,(ow $urrent ,rom V.. to /N. during Swit$hing when both

NMOS and PMOS $ondu$ting Simu(taneou)(y. Su$h *ath ne'er e=i)t) in a dynami$ $ir$uit).

Short%Cir$uit energy a) a ,un$tion o, )(o*e ratio Short%Cir$uit energy di))i*ation 4norma(i>ed with re)*e$t to >ero i6* ri)e time energy5 ,or a )tati$ CMOS. he *ower di))i*ation due to )hort $ir$uit $urrent) i) minimi>ed by mat$hing the ri)e6,a(( time) o, the in*ut and out*ut )igna(). Short%Cir$uit redu$ed by (ower the Su**(y Vo(tage. Con$(u)ion hu) the (ow *ower $an be a$hie'ed by de$rea)ing Vdd to $ertain (e'e(. !) (ea-age $urrent $annot be redu$ed& the )hort $ir$uit $urrent) are e(iminated by dynami$ $ir$uit). he *ower di))i*ation due to )hort $ir$uit $urrent) i) minimi>ed by mat$hing the ri)e6,a(( time) o, the in*ut and out*ut )igna() /(it$hing ma-e) *ower to di))i*ate )o it i) redu$ed by $o*e *ro$e)) ? @ A7%B7%7BAB& AA:BC PM Post: #2 project report tiger SP .e)er'ed Member Po)t): A&BD7 Eoined: 2eb 7BAB

RE: LOW POWER VLSI On CMOS full report *(ea)e read htt*:66$ite)eer=.i)t.*)u.edu6'iewdo$6dow...AFty*e0*d, ,or getting ,u(( re*ort ? @ A7%AB%7BAB& A7:;7 PM Post: #3 project report helper SP .e)er'ed Member

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RE: LOW POWER VLSI On CMOS full report

Gatta$hment0;DH7I LOW POWER VLSI EC!"OLO#$ !"S R!C In the *a)t& the maJor $on$ern) o, the VLSI de)ign were area& *er,orman$e& $o)t and re(iabi(ityK *ower $on)ideration wa) mo)t(y o, on(y )e$ondary im*ortan$e. In re$ent year)& thi) ha) begun to $hange in$rea)ing(y& *ower i) being gi'en $om*arab(e weight to area and )*eed $on)ideration). +igh *ower )y)tem) o,ten run hotK high tem*erature tend) C in$rea)eto e=a$erbate )e'era( )i(i$on ,ai(ure me$hani)m). E'ery AB in o*erating tem*erature rough(y doub(e) a $om*onentL) ,ai(ure rate. he growth o, *er)ona( $om*uting de'i$e) 4*ortab(e de)-to*)& audio and 'ideo%ba)ed mu(timedia *rodu$t)5 and wire(e)) $ommuni$ation) )y)tem) demand high%)*eed $om*utation and $om*(e= ,un$tiona(ityK with (ow *ower $on)um*tion. In thi) $onte=t& *ea- *ower 4ma=imum *o))ib(e *ower di))i*ation5 i) a $riti$a( de)ign ,a$tor a) it determine) the therma(& e(e$tri$a( (imit) o, de)ign)K im*a$t) the )y)tem $o)t& )i>e and weightK di$tate) )*e$i,i$ battery ty*e& )y)tem *a$-aging& heat )in-)K aggra'ate) the re)i)ti'e and indu$ti'e 'o(tage dro* *rob(em) *ointing to an u(timate )o(ution% LOW POWER VLSI EC+NOLO/#. Low *ower ha) emerged a) a *rin$i*a( theme in todayL) e(e$troni$) indu)try. he need ,or (ow *ower ha) $au)ed a maJor *aradigm )hi,t where *ower di))i*ation ha) be$ome a) im*ortant a $on)ideration a) *er,orman$e and area. hi) arti$(e re'iew) 'ariou) )trategie) and methodo(ogie) ,or de)igning (ow *ower $ir$uit) and )y)tem). It de)$ribe) the many i))ue) ,a$ing de)igner) at ar$hite$tura(& (ogi$& $ir$uit and de'i$e (e'e() and *re)ent) )ome o, the te$hniMue) that ha'e been *ro*o)ed to o'er$ome the)e di,,i$u(tie). he arti$(e $on$(ude) with the ,uture $ha((enge) that mu)t be met to de)ign (ow *ower& high *er,orman$e )y)tem). ? @
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