SPP08N80C3

CoolMOSTM Power Transistor

Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances

Product Summary V DS R DS(on)max @ Tj = 25C Q g,typ 800 0.65 45 V nC

PG-TO220-3

CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward)

Type SPP08N80C3

Package PG-TO220-3

Marking 08N80C3

Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque P tot T j, T stg M3 and M3.5 screws T C=25 C T C=25 C I D=1.6 A, V DD=50 V I D=8 A, V DD=50 V Value 8 5.1 24 340 0.2 8 50 20 30 104 -55 ... 150 60 W C Ncm A V/ns V mJ Unit A

Rev. 2.9

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SPP08N80C3
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 C 24 4 V/ns Value 8 Unit A

Parameter

Symbol Conditions min.

Values typ. max.

Unit

Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.2 62 K/W

Soldering temperature, T sold wave soldering only allowed at leads

1.6 mm (0.063 in.) from case for 10s

260

Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 A V (BR)DS V GS(th) I DSS V GS=0 V, I D=8 A V DS=V GS, I D=0.47 mA V DS=800 V, V GS=0 V, T j=25 C V DS=800 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=5.1 A, T j=25 C V GS=10 V, I D=5.1 A, T j=150 C Gate resistance RG f =1 MHz, open drain 800 2.1 870 3 3.9 20 A V

100 0.56

100 0.65 nA

1.5 1.2

Rev. 2.9

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SPP08N80C3
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance C iss C oss V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=0/10 V, I D=8 A, R G=10 ? , T j=25 C 99 25 15 72 10 ns 1100 46 36 pF Values typ. max. Unit

Effective output capacitance, energy C o(er) related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current
1)

C o(tr) t d(on) tr t d(off) tf

Q gs Q gd Qg V plateau V DD=640 V, I D=8 A, V GS=0 to 10 V

6 22 45 5.5

60 -

nC

V SD t rr Q rr I rrm

V GS=0 V, I F=I S=8 A, T j=25 C

1 550 7 24

1.2 -

V ns C A

V R=400 V, I F=I S=8 A, di F/dt =100 A/s

J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD=ID, di/dt=400A/s, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

2)

3)

4)

5)

6)

Rev. 2.9

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SPP08N80C3
1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
120 102
limited by on-state resistance

100

80

101

10 s

1 s

P tot [W]

60

I D [A]

100 s 1 ms

40

100

DC 10 ms

20

0 0 25 50 75 100 125 150

10-1 1 10 100 1000

T C [C]

V DS [V]

3 Max. transient thermal impedance ZthJC=f(tP) parameter: D=t p/T

101

4 Typ. output characteristics I D=f(V DS); T j=25 C; t p=10s parameter: V GS

30
20 V

100

20
10 V 0.5

Z thJC [K/W]

0.2 0.1 0.05

I D [A]

6V

10-1

0.02 0.01 single pulse

10
5.5 V

5V

4.5 V

10-2 10-5 10-4 10-3 10-2 10-1

0 0 5 10 15 20 25

t p [s]

V DS [V]

Rev. 2.9

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SPP08N80C3
5 Typ. output characteristics I D=f(V DS); T j=150 C; t p=10s parameter: V GS
12
20 V 10 V 6V

6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS

3.2

2.8 9
5.5 V

5V

R DS(on) [ ]

2.4

I D [A]

2
6V 5.5 V 5V 6.5 V 10 V

4.5 V

3 1.6
4.5 V

20 V

0 0 5 10 15 20 25

1.2 0 3 6 9 12 15

V DS [V]

I D [A]

7 Drain-source on-state resistance R DS(on)=f(T j); I D=5.1 A; V GS=10 V

8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10s parameter: T j

1.8 1.6

30

25 C

25 1.4 1.2 20

R DS(on) [ ]

I D [A]

1 0.8 0.6 0.4

98 %

15

150 C

typ

10

5 0.2 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10

T j [C]

V GS [V]

Rev. 2.9

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SPP08N80C3
9 Typ. gate charge V GS=f(Q gate); I D=8 A pulsed parameter: V DD
10

10 Forward characteristics of reverse diode I F=f(V SD); t p=10s parameter: T j

102

150C (98%)

160 V 25 C 640 V

101 6
150 C

25C (98C)

V GS [V]

4 100

I F [A]
0 0 10 20 30 40 50 10-1 0 0.5 1 1.5 2

Q gate [nC]

V SD [V]

11 Avalanche energy E AS=f(T j); I D=1.6 A; V DD=50 V

12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA

350

960

300

920

250

880

V BR(DSS) [V]

E AS [mJ]

200

840

150

800

100

760

50

720

0 25 50 75 100 125 150

680 -60 -20 20 60 100 140 180

T j [C]

T j [C]

Rev. 2.9

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SPP08N80C3
13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS)

104

9 8
Ciss

103

7 6

E oss [J]
300 400 500 600 700 800

C [pF]

5 4 3

102
Coss

101
Crss

2 1

100 0 100 200

0 0 100 200 300 400 500 600 700 800

V DS [V]

V DS [V]

Rev. 2.9

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SPP08N80C3
Definition of diode switching characteristics

Rev. 2.9

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SPP08N80C3
PG-TO220-3: Outline

Dimensions in mm/inches

Rev. 2.9

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SPP08N80C3

Published by Infineon Technologies AG 81726 Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 2.9

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2008-10-15