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2. a) Describe the construction and working of PN Junction diode. Draw its volt-
amphere characteristic curve and its equivalent circuit. State the limitation in the
operation of PN Junction diode.
b) Explain about intrinsic and extrinsic semiconductors. Give the energy band
description and the effect of temperature on semiconductors. State some of the
mostly used semiconductors.
3. a) Describe the construction and working of P-channel FET. Draw its volt-ampere
and transfer characteristic curve.
b) Draw the cross section of N-Channel and P-Channel MOSFET structures.
4.a) Explain the construction and working of npn and pnp transistor. Sketch its
characteristic curve for common emitter configuration.
b) A common base transistor has an input resistance of 20Ω and output resistance of
100kΩ. The collector load is 1kΩ. If a signal of 500mV is applied between
emitter and base, find the voltage amplification. Assume αac to be nearly one.
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Set No.
4. a) Describe the construction and working of n-channel FET. Draw its volt-amphere
and transfer characteristic curves.
b) Explain in detail the working of VJT. Draw its characteristic curve.
2. a) Sketch the energy band diagrams for (i) intrinsic (ii) n-type and (iii) p-type
semiconductors. Indicate various levels. What is the effect of temperature on the
positions of the Fermi levels?
b) Explain how the voltage, phase shift and frequency are measured by using a CRO.
4. a) With the help of structure, symbol, energy band diagrams and characteristics
explain the operation of Tunnel diode.
b) A full wave rectifier operated through a step down transformer 230V/ 24-0-24V,
50Hz has diodes with forward resistance of 50Ω, drives a resistive load of 200Ω.
Find dc output voltage, rectification efficiency, PIV and ripple factor.
5. a) Explain the active, saturation and cut-off regions of a transistor and how it is
biased in these regions.
b) With the help of structure, symbol, equivalent circuit and characteristics explain
the operations of UJT.
Contd….2
Code No. 222102 .2. Set No. 3
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Set No.
2. a) Explain the focussing methods with electric as well as magnetic fields in a CRO.
b) Give the detailed specifications of a CRO and list out the precautions to be taken
to handle it in the laboratory.
c) In CRT having magnetic deflection system, the screen is 25cm away from the
centre of the deflection coils. The length of the uniform magnetic field along the
axis is 5cm. If the deflection of 2cm is required on the screen, what is the amount
of the magnetic flux density required for the final anode of 1000 volts? Also
calculate deflection sensitivity.
4. a) What is meant by thresh hold voltage and why is it higher for silicon than that of
Germanium.
b) Is the doping levels of P and N materials of a junction diode be equal. Give
reasons.
c) Explain the construction, working and V-I characteristics of an enhancement
MOSFET.
5. a) Explain the reason for having negative resistance characteristic in UJT and give
its usefulness.
b) For a CE, CC, CB transistor configurations sketch (i) current gain ∼RL (ii) Voltage
gain ∼ RL (iii) input resistance ∼RL (iv) o/p resistance ∼Rs.
Contd….2
Code No. NR222102 .2. Set No. 4
8. a) Explain atleast with four examples, how the process of doping changes the
characteristics of a pn junction.
b) Derive the expression for the motion of electron in an electric field.
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