INTERNATIONAL ISLAMIC UNIVERSITY MALAYSIA

END OF SEMESTER EXAMINATION SEMESTER I, 2004/2005 SESSION

KULLIYYAH OF ENGINEERING
Programme Time Duration : ENGINEERING : 3:00 pm - 06:00 pm : 3 Hrs Section(s) : 4 Level of Study Date : UG 1 : 08/10/2004

Course Code : ECE 1312 Course Title : Electronics

This Question Paper Consists of Six (6) Printed Pages (Including Cover Page) With Five (5) Questions. INSTRUCTION(S) TO CANDIDATES

DO NOT OPEN UNTIL YOU ARE ASKED TO DO SO

!" Total marks of this examination is 100. !" This examination is worth 40% of the total assessment. !" Answer all 5 (Five) questions.

Any form of cheating or attempt to cheat is a serious offence which may lead to dismissal.

Electronics

ECE 1312

Q.1 [20 marks] (a) Sketch the output vo and determine the dc level of the output for the network shown in Fig. 1(a). Assume that vi = 100 sin(!t). (10 marks)

+ vi 2.2 k! Ideal diodes 2.2 k! 2.2 k!

+ vo

Fig. 1(a)

(b)

What are the maximum and minimum values of Vi, to operate a Zener diode of VZ (10 marks) = 20 V and IZ (max) = 60 mA. See Fig. 1(b).

220 ! + vi -

2
VZ = 20 V IZM = 60 mA 1.2 k!

+ vo -

Fig. 1(b)

Electronics

ECE 1312

Q.2 [20 marks] (a) Find the values of IBQ, ICQ, VCEQ and sketch the dc load line for the circuit shown in Fig. 2. Assume that # = 100, VBE = 0.7V and ICO has negligible effect on IC. (10 marks)

+15 V R1 C1 + vo vs vin R2 5 k! RE 1 k! C3 RL 2 k! 10 k! RC 1 k! +

RS 500 !

C2

Fig. 2 (b) Compute the voltage gain Av, input impedance Zi, current gain Ai, power gain G, and output impedance Zo for the amplifier shown in Fig. 2. (Assume, r" = 631 ! and the transistor is operating in the active region) (10 marks)

Electronics

ECE 1312

Q.3 [20 marks] (a) The MOSFET in Fig. 3 has Vto = 1 V, K = 0.25 mA/V2, # = 0. Determine the Qpoint values (VGSQ, IDQ and VDSQ) of the given circuit. (10 marks)

+20 V R1 C1 + vo vs vin R2 Fig. 3 1 M! RS 2.7 k! C3 RL 10 k! 3 M! RD 4.7 k! +

R 100 !

C2

(b)

Find the input impedance Zi, output impedance Zo and voltage gain Av for the amplifier in Fig. 3. (Assume gm = 1.77 mS and rd = $ !) (10 marks)

Electronics

ECE 1312

Q.4 [20 marks] (a) Derive an expression for feedback gain GF based on the amplifier shown in Fig. 4. (10 marks)

+ VS VF

V1

+ Vo

Fig. 4 (b) Calculate GF in each of the following cases and comment on the results. G 500 5000 10 100 1000 H 0.2 -0.01 0.08 0.01 -0.05

(10 marks)

1. 2. 3. 4. 5.

Electronics

ECE 1312

Q.5 [20 marks] (a) Draw the small signal mid-frequency ac equivalent circuit for the amplifier with feedback bias shown in Fig. 5. Use Miller theorem to give the expressions for Ri (10 marks) and Ro. +VCC

C2 RS vs C1 RF + vo vin Fig. 5 (b) Write True/False (Wrong answer bears negative mark): (10 marks) -

RL

1. When the anode is more positive than the cathode of a diode, the condition is called reverse bias. 2. A semiconductor material has a negative temperature coefficient of resistance which means that as temperature increases, the resistance increases. 3. A p-type semiconductor has more valence-band holes than valence band electrons. 4. A forward bias causes a large depletion region in a p-n junction offers a large resistance and therefore only permits a small current. 5. Leakage or reverse current is the extremely small current passes through the p-n junction due to minority carriers. 6. Covalent bond is electrons shared by two neighboring atoms, which form a recombined electron-hole pair. 7. Conduction band is an energy band in which electrons can move freely within a material. 8. When an electron goes from the valence band to the conduction band, it generates an electron-hole pair. 9. In n-type semiconductor, the electrons are called minority carriers and the Fermi level lies above the middle of the band gap. 10. At a p-n junction theres an attractive force between the electrons of the n-type material and the holes of the p-type material.