AP4800AGM

RoHS-compliant Product

Advanced Power Electronics Corp.

Simple Drive Requirement Low On-resistance Fast Switching Characteristic
D D D D

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS RDS(ON) ID
G S S S

30V 18m 9.6A

SO-8

Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

G S

Absolute Maximum Ratings

Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3 3

Rating 30 20 9.6 7.7 40 2.5 0.02 -55 to 150 -55 to 150

Units V V A A A W W/

Continuous Drain Current Total Power Dissipation Linear Derating Factor

Storage Temperature Range Operating Junction Temperature Range

Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3

Value 50

Unit /W

Data and specifications subject to change without notice

1 200712245

AP4800AGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=9A VGS=4.5V, ID=7A VGS=4V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70 C)
o

Min. 30 1 -

Typ. 13 21 9 12 2 7 7 7 22 7 710 155 145

Max. Units 18 28 40 3 1 25 100 18 1350 V m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF

VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=9A VDS=20V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz

Gate-Source Leakage Total Gate Charge

2

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2

Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2

Test Conditions IS=2.1A, VGS=0V IS=9A, VGS=0V, dI/dt=100A/s

Min. -

Typ. 24 14

Max. Units 1.2 V ns nC

trr
Qrr

Reverse Recovery Time

Reverse Recovery Charge

Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

AP4800AGM
40
40

T A =25 o C

ID , Drain Current (A)

30

20

V G = 3.0 V

ID , Drain Current (A)

10V 7.0 V 5.0 V 4.5 V

T A = 150 C

30

10V 7.0 V 5.0 V 4.5 V

20

V G = 3.0 V

10

10

0 0 1 2 3 4

0 0 1 2 3 4

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

18

1.6

ID=7A T A =25
16

ID=9A V G =10V
1.4

Normalized RDS(ON)
2 4 6 8 10

RDS(ON) (m)

14

1.2

12

1.0

10

0.8

0.6 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V)

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature

1.4

10

Normalized VGS(th) (V)

1.2

IS(A)

T j =150 o C
4

T j =25 o C

1.0

0.8
2

0.6 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V)

T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

3

AP4800AGM
12 1000

f=1.0MHz

ID=9A
10

C iss

VGS , Gate to Source Voltage (V)

V DS = 20 V
6

C (pF)

C oss C rss
100 0 5 10 15 20 25 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC)

V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

Normalized Thermal Response (Rthja)

Duty factor=0.5

10

100us

0.2

ID (A)

1ms
1

0.1

0.1

10ms 100ms 1s DC

0.05

PDM

t T
0.02

0.1

T A =25 C Single Pulse

0.01 0.1 1 10

0.01

Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthia=125 /W

Single Pulse

0.01 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

VDS 90%

VG QG 4.5V QGS QGD

10% VGS td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

ADVANCED POWER ELECTRONICS CORP.

Package Outline : SO-8

D
SYMBOLS

Millimeters
MIN NOM MAX

A 8 7 6 5 E1 1
E

1.35 0.10 0.33 0.19 4.80 3.80 5.80 0.38 0

1.55 0.18 0.41 0.22 4.90 3.90 6.15 0.71 4.00 1.27 TYP

1.75 0.25 0.51 0.25 5.00 4.00 6.50 1.27 8.00

A1 B C D E1 E L

e B

A
A1
DETAIL A

1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions.

c
DETAIL A

Part Marking Information & Packing : SO-8

Part Number

Package Code

meet Rohs requirement

4800AGM
YWWSSS
Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence