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<
=
< +
<
<
In this expression,
0
is a constant charge density, and x
0
is a length of the depletion region on the
p-side (-x
0
<x<0) and n-side (0<x<x
0
). The problem has planar symmetry, so there is no variation
of in the y or z directions.
Without worrying about the physics of how these charge distributions are created, we can find
the electric field and scalar potential within the junction region.
(a) The Electric field is zero in the regions x<-x
0
and x>x
0
. Derive a piecewise expression for
E(x) in the region between x
0
<x<0 and 0<x<x
0
.
(b) Find an expression for the scalar potential V(x) in the region x
0
<x<x
0
. You may assume
that V(-x
0
)=0.
(c) The potential difference V(x
0
)-V(-x
0
) is known as the built-in potential of a
semiconductor junction. Using the values
0
=160C/m
3
, and x
0
=0.65m what is the built-
in potential for this junction?
(While it is not necessary to know this to solve the problem, this charge distribution is created at
the interface between n-doped and p-doped semiconductor. The positive charge is created by
ionized donor atom cores, and the negative charge is created by ionized acceptor atom cores. The
values given above are typical for a Si p-n junction with doping levels N
A
=N
D
=10
15
cm
-3
. This
material is covered in great detail in EE2. )
(d) There are other types of junctions where the charge distribution is not so abrupt. These
are called graded junctions. Find E(x) and V(x) for the following charge distribution:
0
0 0
0
0 for
( ) for
0 for +
x x
x Gx x x x
x x
= <
s
<
,
where G is a constant of units (C/m
4
)