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0AT3G Series 400 Watt Peak Power Zener Transient Voltage Suppressors
Unidirectional
The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA series is supplied in ON Semiconductors exclusive, cost-effective, highly reliable SURMETIC package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.
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PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 5.0 78 V, 400 W PEAK POWER
Working Peak Reverse Voltage Range 5.0 V to 78 V Standard Zener Breakdown Voltage Range 6.7 V to 91.25 V Peak Power 400 W @ 1 ms ESD Rating of Class 3 (> 16 kV) per Human Body Model Response Time is Typically < 1 ns Flat Handling Surface for Accurate Placement Package Design for Top Slide or Bottom Circuit Board Mounting Low Profile Package SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable PbFree Packages are Available*
CATHODE
ANODE
MARKING DIAGRAM
xx AYWWG
Mechanical Characteristics: CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant and leads are
xx A Y WW G
= Device Code (Refer to page 3) = Assembly Location = Year = Work Week = PbFree Package
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
ORDERING INFORMATION
Device 1SMAxxAT3G SZ1SMAxxAT3G Package SMA (PbFree) SMA (PbFree) Shipping 5,000 / Tape & Reel 5,000 / Tape & Reel
260C for 10 Seconds POLARITY: Cathode indicated by molded polarity notch or polarity band MOUNTING POSITION: Any
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 ms, nonrepetitive. 2. 1 square copper pad, FR4 board. 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
I IF
VC VBR VRWM
IR VF IT
IPP
UniDirectional TVS
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ELECTRICAL CHARACTERISTICS
VRWM (Note 6) Volts 5.0 6.0 6.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 54 58 70 75 IR @ VRWM mA 400 400 250 25 5.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 Breakdown Voltage VBR (Volts) (Note 7) Min 6.4 6.67 7.22 8.89 9.44 10 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40 44.4 47.8 50 53.3 60 64.4 77.8 83.3 Nom 6.7 7.02 7.6 9.36 9.92 10.55 11.7 12.85 14.0 15.15 16.4 17.6 18.75 19.9 21.05 23.35 25.65 28.1 30.4 32.75 35.05 38.65 42.1 46.75 50.3 52.65 56.1 63.15 67.8 81.9 87.7 Max 7.0 7.37 7.98 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 52.8 55.3 58.9 66.3 71.5 86.0 92.1 @ IT mA 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VC @ IPP (Note 8) VC Volts 9.2 10.3 11.2 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.2 77.4 87.1 93.6 113 121 IPP Amps 43.5 38.8 35.7 29.4 27.8 26.0 23.5 22.0 20.1 18.6 17.2 16.4 15.4 14.5 13.7 12.3 11.3 10.3 9.5 8.8 8.3 7.5 6.9 6.2 5.8 5.5 5.2 4.6 4.3 3.5 3.3 C Typ. (Note 9) pF 2035 1730 1605 1035 1265 1200 1090 1000 925 860 800 758 715 680 645 585 540 500 460 430 405 375 345 315 295 280 265 240 225 190 180
Device* 1SMA5.0AT3G 1SMA6.0AT3G 1SMA6.5AT3G 1SMA8.0AT3G 1SMA8.5AT3G 1SMA9.0AT3G 1SMA10AT3G 1SMA11AT3G 1SMA12AT3G 1SMA13AT3G 1SMA14AT3G 1SMA15AT3G 1SMA16AT3G 1SMA17AT3G 1SMA18AT3G 1SMA20AT3G 1SMA22AT3G 1SMA24AT3G 1SMA26AT3G 1SMA28AT3G 1SMA30AT3G 1SMA33AT3G 1SMA36AT3G 1SMA40AT3G 1SMA43AT3G 1SMA45AT3G 1SMA48AT3G 1SMA54AT3G 1SMA58AT3G 1SMA70AT3G 1SMA75AT3G
Device Marking QE QG QK QR QT QV QX QZ RE RG RH RM RP RR RT RV RX RZ SE SG SK SM SP SR ST SV SX TE TG TP TR
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 7. VBR measured at pulse test current IT at an ambient temperature of 25C. 8. Surge current waveform per Figure 2 and derate per Figure 3. 9. Bias voltage = 0 V, F = 1.0 MHz, TJ = 25C. Please see 1SMA10CAT3 to 1SMA75CAT3 for Bidirectional devices. * Include SZ-prefix devices where applicable.
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100 Ippm, PEAK PULSE CURRENT (%) NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2. TA = 25C
120 10 ms 100 80 60 40 20 0 0.001 0.01 0.1 tP, PULSE WIDTH (ms) 1 10 PEAK VALUE Ippm
TA = 25C PW (ID) IS DEFINED AS THE POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF Ipp.
10
0.1
10-4
120 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT 100 80 60 40 20 0 10 x 1000 WAVEFORM AS DEFINED BY R.E.A.
10,000 1SMA5.0AT3G C, CAPACITANCE (pF) 1,000 1SMA10AT3G 1SMA36AT3G 100 1SMA64AT3G 10 TJ = 25C F = 1 MHz
1 0 40 80 120 160 TA, AMBIENT TEMPERATURE (C) 200 1 10 BIAS VOLTAGE (VOLTS) 100
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A A1
SOLDERING FOOTPRINT*
4.0 0.157
2.0 0.0787
2.0 0.0787
SCALE 8:1 mm inches
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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1SMA5.0AT3/D
www.s-manuals.com