TemperatureDependenceof CarrierConcentrations(Intrinsic Semiconductors) Semiconductors).

Lecture08

Intrinsiccarrierconcwithtempraturefor Ge,SiandGaAs.RefBGStreetmanFig318 MdJawaidAlam JIIT,Sect62,Noida,India

TemperatureDependenceofCarrierConcentrations (ExtrinsicSemiconductors)

Lecture08

Thetemperaturedependenceofelectronconcentrationin adopedsemiconductorcanbevisualizedasshowninthis Fig HereSiisdopedntypewithadonor concentrationND of1015 cm3. ylowtemperatures p Atvery (large1/T),negligible intrinsicEHPsexist,andthe donorelectronsarebound tothedonoratoms. atoms

RefBGStreetmanFig319 At higher temperatures ni is much greater than Nd, and the intrinsic nature dominate Between100400Kwheneveryavailable extrinsicelectronhasbeentransferredtothe yconstantwith conductionband,n0 isvirtually temperatureuntiltheconcentrationofintrinsic carriersni becomescomparabletotheextrinsic concentrationNd. JIIT,Sect62,Noida,India

MdJawaidAlam

CompensationandSpaceChargeNeutrality

Lecture08

If the dopingc carrier concentrations were ND >>ni or NA>>pi, respectively then only approximation no=Nd and po = NA is valid. The exact relationship among the electron, hole, donor, and acceptor concentrations can be obtained by considering the requirements for space charge neutrality If the material is to remain electrostatically neutral, the sum of the positive charges (holes and ionized donor atoms) must balance the sum of the negative charges (electrons and ionized acceptor atoms).

Ifthematerialisdopedntype(n0p0)then MdJawaidAlam JIIT,Sect62,Noida,India

Lecture08
Prob 1):IfaSisubstrateisdopedwith9 9*10 1010Asatomscm3atroom temperature then a) findtheequilibriumelectronandholeconcentrationinthedoped semiconductor. b) ShiftinFermilevelwithrespecttointrinsicFermilevel. c) IfwedopeBinsteadofAsthenrepeatparta)andb). Prob 2:FindthedopingconcentrationofAs orB (whicheverbesuitable) sothatFermilevelinthedopedSi liesexactlymiddleofthebandgap.

MdJawaidAlam

JIIT,Sect62,Noida,India

Lastlecture.

Lecture09

MdJawaidAlam

JIIT,Sect62,Noida,India

Lastlecture.

Lecture09

MdJawaidAlam

JIIT,Sect62,Noida,India

TemperatureDependenceofCarrierConcentrations (IntrinsicSemiconductors)

Lecture09

MdJawaidAlam

JIIT,Sect62,Noida,India

 DriftandDiffusion

Lecture09

We now have some idea of the number density of charge carriers (electrons and holes) present in a semiconductor material from the work we covered in the last lectures. Since Si current t is i the th rate t of f flow fl of f charge h , we shall h ll be able calculate currents flowing in real devices since we know the number of charge carriers. There are two current mechanisms which cause charges to move in semiconductors. The two mechanisms we shall study in due course are drift and diffusion.

Md Jawaid Alam

JIIT,Sec62,Noida,INDIA

 CarrierDrift

Lecture09

Electron and holes will move under the influence of an applied electric field since the field exert a force on charge carriers (electrons and holes). These movements result a current of ;

Id

F =q qE

I d = nqVd A
Vd

A
I d : driftcurrent
Vd :
driftvelocityofchargecarrier

nq

n: q:

numberofchargecarriersperunitvolume chargeoftheelectron

A : areaofthesemiconductor
Md Jawaid Alam JIIT,Sec62,Noida,INDIA

 CarrierMobility,

Lecture09

Vd = E
E: :
2 [] =cm V Sec

appliedfield mobility yofcharge g carrier

isaproportionalityfactor

Vd = E

Soisameasurehoweasilychargecarriersmove undertheinfluenceof anappliedfieldordetermineshowmobile the chargecarriers are. are

Md Jawaid Alam

JIIT,Sec62,Noida,INDIA

Themobilityhastwocomponents
Themobilityhastwocomponent

Lecture09

Latticeinteraction component

Impurityinteraction component

Md Jawaid Alam

JIIT,Sec62,Noida,INDIA

Thermalvelocity

Lecture09

Assume that A h s/c / crystal l is i at thermodynamic h d i equilibrium ilib i (i there (i.e. h i no is applied field). What will be the energy of the electron at a finite temperature? The electron will have a thermal energy of kT/2 per degree of freedom. So , in 3D, electron will have a thermal energy of

3 kT 1 * 2 3 kT m V th = V th = E = 2 2 2
V th : thermal V th T V th
1 2 1 2

3 kT m

velocity

of

electron

(m )
*

Md Jawaid Alam

JIIT,Sec62,Noida,INDIA

Randommotion resultnocurrent. current.

Lecture09

Since there is no applied field, the movement of the charge carriers will be completely random. This randomness result no net current flow. As a result of thermal energy there are almost an equal number of carriers moving right as left, in as out or up as down.

Md Jawaid Alam

JIIT,Sec62,Noida,INDIA

Calculation

Lecture09

Calculate the velocity of an electron in a piece of ntype silicon due to its thermal energy at RT and due to the application of an electric l t i field fi ld of f 1000 V/m V/ across the th piece i of f silicon. ili

V th = ? Vd = ?

RT = 300 K E = 1000 V / m

* me = 1.18 m 0

= 0.15 m 2 /(V s )

th

3 kT 5 = V 1.08 x 10 m / sec th m

V d = E V d = 150 m / sec
Md Jawaid Alam JIIT,Sec62,Noida,INDIA

Microscopicunderstandingofmobility mobility? ?

Lecture09

Howlong gdoesacarriermoveintimebeforecollision? Theaveragetimetakenbetweencollisionsiscalledasrelaxation time,(ormeanfreetime)

Howfardoesacarriermoveinspace(distance)beforea collision? Theaveragedistancetakenbetweencollisionsiscalledasmean freepath,. l

Md Jawaid Alam

JIIT,Sec62,Noida,INDIA

Calculation
Driftvelocity=AccelerationxMeanfreetime

Lecture09

Vd

F = * m

Forceisduetotheappliedfield,F=qE

F m =

q E * m

V
Md Jawaid Alam

q m

JIIT,Sec62,Noida,INDIA

Calculation

Lecture09

C Calculate l l t the th mean free f ti time and d mean free f path th for f electrons l t in a piece of ntype silicon and for holes in a piece of ptype silicon.

=?

l =?

* me = 1 .1 8 m o

mh = 0 .5 9 m o

e = 0 .1 5 m 2 /( (V s ) e = e m e
q = 1 0 1 2 sec

h = 0 .0 4 5 8 m 2 /( (V s ) h =
hmh

= 1 .5 4 x1 0 1 3 sec

v thelec = 1 .0 8 x1 0 5 m / s

v thh o le = 1 .0 5 2 x1 0 5 m / s

l e = v thelec e = (1 .0 8 x1 0 5 m / s )(1 0 1 2 s ) = 1 0 7 m l h = v thh o le h = (1 .0 0 5 2 x1 0 5 m / s )(1 .5 5 4 x1 0 1 3 sec) = 2 .3 3 4 x1 0 8 m

Md Jawaid Alam JIIT,Sec62,Noida,INDIA

SaturatedDriftVelocities(EffectatHighElectricField)

Lecture09

Vd = E
Soonecanmakeacarriergoasfastaswelikejustbyincreasing theelectricfield!!!

Vd

fore forholes

E
( )Implication (a) I li ti of fabove b eqn.

E
(b)S Saturation t ti d drift iftvelocity l it

Md Jawaid Alam

JIIT,Sec62,Noida,INDIA

 SaturatedDriftVelocities
Vdoes . Eimply that Vd The equation of not d = linearly with applied field E.

Lecture09

increases

Vd increases linearly for low values of E and then it saturates at some value of Vd which is close Vth at higher values of E. Any further increase in E after saturation point does not increase Vd instead warms up the crystal.

Md Jawaid Alam

JIIT,Sec62,Noida,INDIA

LastLecture

Lecture10

I d = nqV q dA
Vd = E
Soisameasurehow h easily l charge h carriersmove under d the h influence fl of f anappliedfieldordetermineshowmobile the chargecarriers are.

Themobilityhastwocomponent

Latticeinteraction component

Impurityinteraction component

 Mobilityvariationwithtemperature

Lecture10

T Hightemperature Lowtemperature

ln( )

L
ln(T)

Peakdependson thedensityof impurities

Thisequationiscalledas Mattheisensrule.

Md Jawaid Alam

JIIT,Sec62,Noida,INDIA

Mobilityvariationwithtemperature
For lightly g y doped p samples p (e.g., ( g the sample with doping of 1014 cm3), the lattice scattering dominates, and the mobility decreases as the temperature increases For heavily doped samples, the effect of impurity scattering is most pronounced at low temperatures. The mobility increases as the temperature increases, as can be seen for the sample with doping of 1019 For a given temperature, the mobility decreases with increasing impurity concentration because of enhanced impurity scattering

Lecture10

Electronmobilityinsiliconversustemperaturefor variousdonorconcentrations. concentrations Insertshowsthe theoreticaltemperaturedependenceofelectron Mobility

ConceptofMeanfreetime andMeanFreePathlengthL
Driftvelocity=AccelerationxMeanfreetime

Lecture10

Vd

F = * m

Forceisduetotheappliedfield,F=qE

F m =

q E * m

q m

Conductivity
I d = nqV Vd A I Jd = d A Vd = E q = m nq 2 Jx = m Ex

Lecture10
Vd

Id

nq

J x = nqVd = nq E

I d = nqVd A

nq q 2 = m

J x = Ex

OhmsLaw

Lecture10

J x = Ex

Ix Ix 1 V V = = A L A L

VA V I= = L R
Prob:
Assuming g that mobility y of electron is three times mobility y of holes in silicon at 300K prove that a silicon sample has maximum resistivity when it is slightly ptype. Also find the doping concentration for maximum resistivity.

Lecture10

Calculation

C Calculate l l t the th mean free f ti time and d mean free f path th for f electrons l t in a piece of ntype silicon and for holes in a piece of ptype silicon.

=?

l =?

* me = 1 .1 8 m o

mh = 0 .5 9 m o

e = 0 .1 5 m 2 /( (V s ) e = e m e
q = 1 0 1 2 sec

h = 0 .0 4 5 8 m 2 /( (V s ) h =
hmh

= 1 .5 4 x1 0 1 3 sec

v thelec = 1 .0 8 x1 0 5 m / s

v thh o le = 1 .0 5 2 x1 0 5 m / s

l e = v thelec e = (1 .0 8 x1 0 5 m / s )(1 0 1 2 s ) = 1 0 7 m l h = v thh o le h = (1 .0 0 5 2 x1 0 5 m / s )(1 .5 5 4 x1 0 1 3 sec) = 2 .3 3 4 x1 0 8 m

Md Jawaid Alam JIIT,Sec62,Noida,INDIA

HallEffect

Lecture11

The carrier concentration in a semiconductor may be different from the impurity concentration, because the ionized impurity density depends on the temperature and the impurity energy level. To measure the carrier concentration directly, the most commonly used method is Hall effect. effect Hall measurement is also one of the most convincing methods to show the existence of holes as charge carriers, because the give directly y the carrier type. yp measurement can g

HallEffectCont

Lecture11

Anelectricfieldappliedalongthexaxis Amagneticfieldappliedalongthezaxis Consideraptypesemiconductorsample HallCoefficient

where

HallEffectCont

Lecture11

AmeasurementoftheHallvoltageforaknowncurrentandmagneticfieldyields

whereallthequantitiesinthelighthandsideoftheequationcanbemeasured.

DiffusionCurrent
Theaveragerateofelectronflowperunitarea F1 ofelectronscrossingplane x=0fromtheleftisthen

Lecture11 n(x)

Similarly,theaveragerateofelectronflow perunit itareaF2 of felectrons l t at tx=lcrossing i planex=0fromtherightis

Where

3 kT 1 * 2 3 kT m V th = V th = E = 2 2 2

3 kT m

Lecture11
Thenetrateofcarrierflowfromlefttorightis

Approximatingthedensitiesatx= lbythe firsttwotermsofaTaylorseriesexpansion, weobtain

Where iscalledthediffusioncoefficientalsocalled thedliffusivity. dliffusivity Becauseeachelectroncarriersachargeq

LastLecture

Lecture12

Prob:Assumethat,inanntypesemiconductoratT=300K,theelectronconcentration variesLinearlyfrom1x1018 to7X1017cm3 overadistanceof0.1cm.Calculatethe diffusioncurrentdensityiftheelectrondiffusioncoefficientisDn=22.5cm2/s.

TotalCurrentdensity
n(x)

Current

Lecture12

Electrondiffusion

x Current

p(x)

HoleDiffusion

40

EinsteinRelation

Lecture12

40

Module4: Excesscarriersgeneration&recombination processesandsemiconductordeviceequations. p q

Lecture13

Intrinsic

Doped

Onlyinthermalequilibriumthe relationshipnp=ni2 isvalid. valid Theprocessofintroducingexcesscarriersis calledcarrierinjection. Wecanintroduceexcesscarriersby Optical O i lexcitation i i forwardbiasingapnjunction Electronbombardment

DirectRecombination
Numberofelectronholepairsgenerated percm3 per second:Gth

Lecture13

NumberofelectronholepairsRecombined per cm3 persecond:Rth

andatthermalequilibrium Rth= Gth Thermalequilibrium nn0 nn0 nn=nn0+ nn0

pn0

pn0

pn =pn0+ pn0

DirectRecombination

Lecture13

therateofchangeofholeswithtimeinthisdynamicsystemwillbe

Insteadystate, whereU isthenetrecombinationrate.

Lecture13
B t But And

Forlowlevelinjection

Where

Lecture13
Thephysicalmeaningoflifetimecanbestbe illustratedbythetransientresponseof adeviceafterthesuddenremovalofthelight source.

Consideranntype sample,asshown inFigthatisilluminatedwithlightand inwhichtheelectronholepairsare generateduniformlythroughoutthe samplewithagenerationrateGL

InsteadystateGLmustbeequaltoNet recombinationU

Lecture13

Ifatanarbitrarytime,say t=0,thelightissuddenly turnedoff

Willreduceto

andthesolutionis

Lecture13

Prob:ASisamplewithnn0=1014 cm3 isilluminatedwithlightand1013 electronhole pairs/cm3arecreatedeverymicrosecond.Iftn=tp=1uSec,findthechangeintheminority carrierconcentration. Ifthelightisturnedoffatt=0sec,i.e GL =0att=0,thenfindtheholeconcentrationat t=1usec,t=2usec,t=4usecandt=10usec

IndirectRecombination
recombinationcenters

Lecture14

Traplevel

NetRecombinationrate(U)depends onthe th electron l t orhole h l capture t cross section.

Augerrecombination

Lecture14

Usually,Augerrecombinationisimportantwhenthecarrierconcentrationisveryhigh asaresultofeitherhighdopingorhighinjectionlevel.BecausetheAugerprocess involvesthreeparticles, particles therateofAugerrecombinationcanbeexpressedas

TheproportionalityconstantBhasastrongtemperaturedependence

CONTINUITYEQUATION

Lecture14

Inthepreviouslecturesweconsideredindividualeffectssuchasdriftduetoan electricfield,diffusionduetoaconcentrationgradient,andrecombinationof carriersthroughintermediatelevelrecombinationcenters Wenowconsidertheoveralleffectwhendrift,diffusion,andrecombinationoccur simultaneouslyinasemiconductormaterial.Thegoverningequationiscalledthe continuityequation.

Lecture14 CONTINUITYEQUATION Toderivetheonedimensionalcontinuityequationforelectrons,consideraninfinitesimal slicewithathicknessdx locatedatx showninFig

Thenumberofelectronsintheslicemay increaseduetothenetcurrentflowinto thesliceandthenet carriergeneration intheslice Theoverallrateofelectron increaseisthealgebraicsumof fourcomponents:thenumberof electronsflowingintothesliceatx, x minus thenumberofelectrons flowingoutatx+dx, plustherate atwhichelectronsaregenerated, minus therateatwhichtheyare recombinedwithholesintheslice.

CONTINUITYEQUATION Expandingtheexpressionforthecurrent atx+dx inTaylorseriesyields

Lecture14

Wethusobtainthebasiccontinuityequation forelectrons:

Asimilarcontinuityequationcanbederived forholes,

CONTINUITYEQUATION

Lecture14

Intermsofmobilityanddiffusiontheonedimensionalcaseunderlowinjection condition,continuityequationsforminoritycarriersbecomes

YouMustkeepinmindthebasic requirementofPoissonsEquation

SteadyStateInjectionfromOneSide
IntheFigureanntypesemiconductor whereexcesscarriersareinjectedfrom onesideasaresultofillumination.Itis assumedthatlight penetrationisnegligibly small (i.e.,theassumptionsofzerofield andzerogenerationforx>0). thereisaconcentrationgradientnearthe surface f and ditwill illsatisfy ti f C Continuity ti it equationgivenby.

Lecture15

Atsteadystatesolutionofthedifferentialequationfor the h minority i i carriers i i inside id the h semiconductor i d is i

Lecture15

S l ti of Solution fth the2nd order d diff differential ti lequation ti is i

Thelength p isequalto p p andiscalledthediffusionlength.

MinorityCarriersattheSurface

Lecture15

Lecture15
Assignment1
Dateofsubmission:onorbefore23rdofFebruary

Answer

Lecture15

UniquenessofFermilevelinbulksemiconductor