2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev.

B
HGTG12N60A4D, HGTP12N60A4D,
HGT1S12N60A4DS
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49337.
Symbol
Features
>100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
Low Conduction Loss
Temperature Compensating SABER Model
www.fairchildsermi.com
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC TO-263AB
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG12N60A4D TO-247 12N60A4D
HGTP12N60A4D TO-220AB 12N60A4D
HGT1S12N60A4DS TO-263AB 12N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(FLANGE)
C
E
G
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600 V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
54 A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
23 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30 V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
167 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
= 250A, V
GE
= 0V 600 - - V
Collector to Emitter Leakage Current I
CES
V
CE
= 600V T
J
= 25
o
C - - 250 A
T
J
= 125
o
C - - 2.0 mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= 12A,
V
GE
= 15V
T
J
= 25
o
C - 2.0 2.7 V
T
J
= 125
o
C - 1.6 2.0 V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 250A, V
CE
= 600V - 5.6 - V
Gate to Emitter Leakage Current I
GES
V
GE
= 20V - - 250 nA
Switching SOA SSOA T
J
= 150
o
C, R
G
= 10, V
GE
= 15V,
L = 100H, V
CE
= 600V
60 - - A
Gate to Emitter Plateau Voltage V
GEP
I
C
= 12A, V
CE
= 300V - 8 - V
On-State Gate Charge Q
g(ON)
I
C
= 12A,
V
CE
= 300V
V
GE
= 15V - 78 96 nC
V
GE
= 20V - 97 120 nC
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 12A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 10,
L = 500H,
Test Circuit (Figure 24)
- 17 - ns
Current Rise Time t
rI
- 8 - ns
Current Turn-Off Delay Time t
d(OFF)I
- 96 - ns
Current Fall Time t
fI
- 18 - ns
Turn-On Energy (Note 3) E
ON1
- 55 - J
Turn-On Energy (Note 3) E
ON2
- 160 - J
Turn-Off Energy (Note 2) E
OFF
- 50 - J
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 12A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 10,
L = 500H,
Test Circuit (Figure 24)
- 17 - ns
Current Rise Time t
rI
- 16 - ns
Current Turn-Off Delay Time t
d(OFF)I
- 110 170 ns
Current Fall Time t
fI
- 70 95 ns
Turn-On Energy (Note3) E
ON1
- 55 - J
Turn-On Energy (Note 3) E
ON2
- 250 350 J
Turn-Off Energy (Note 2) E
OFF
- 175 285 J
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
Diode Forward Voltage V
EC
I
EC
= 12A - 2.2 - V
Diode Reverse Recovery Time t
rr
I
EC
= 12A, dI
EC
/dt = 200A/s - 30 - ns
I
EC
= 1A, dI
EC
/dt = 200A/s - 18 - ns
Thermal Resistance Junction To Case R
JC
IGBT - - 0.75
o
C/W
Diode - - 2.0
o
C/W
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
E
,

D
C

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

(
A
)
50
10
0
40
20
30
25 75 100 125 150
60
50
V
GE
= 15V,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
40
0
I
C
E
,

C
O
L
L
E
C
T
O
R

T
O

E
M
I
T
T
E
R

C
U
R
R
E
N
T

(
A
)
10
20
300 400 200 100 500 600
0
50
60
30
70
T
J
= 150
o
C, R
G
= 10, V
GE
= 15V, L = 200H
T
C
V
GE
15V 75
o
C
f
M
A
X
,

O
P
E
R
A
T
I
N
G

F
R
E
Q
U
E
N
C
Y

(
k
H
z
)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
3
300
30 10 20
500
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.75
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
J
= 125
o
C, R
G
= 10, L = 500H, V
CE
= 390V
100
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
C
,

P
E
A
K

S
H
O
R
T

C
I
R
C
U
I
T

C
U
R
R
E
N
T

(
A
)
t
S
C
,

S
H
O
R
T

C
I
R
C
U
I
T

W
I
T
H
S
T
A
N
D

T
I
M
E

(

s
)
9 10 11 12 15
0
2
10
16
50
125
175
300
t
SC
I
SC
20
250
13 14
4
6
8
12
14
18
75
100
150
200
225
275
V
CE
= 390V, R
G
= 10, T
J
= 125
o
C
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
0 0.5 1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
E
,

C
O
L
L
E
C
T
O
R

T
O

E
M
I
T
T
E
R

C
U
R
R
E
N
T

(
A
)
0
4
8
1.5 2 2.5
16
20
12
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250s
DUTY CYCLE < 0.5%, V
GE
= 12V
24
T
J
= 25
o
C
I
C
E
,

C
O
L
L
E
C
T
O
R

T
O

E
M
I
T
T
E
R

C
U
R
R
E
N
T

(
A
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250s
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0 0.5 1.0 1.5 2 2.5
4
8
16
12
20
24
0
E
O
N
2
,

T
U
R
N
-
O
N

E
N
E
R
G
Y

L
O
S
S

(

J
)
500
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
400
200
600
0
700
6 4 10 12 14 16 8 18 20 22 24
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 10, L = 500H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V 100
2
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
F
F
,

T
U
R
N
-
O
F
F

E
N
E
R
G
Y

L
O
S
S

(

J
)
0
50
200
100
250
350
400
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
150
6 4 2 10 12 14 16 8 18 20 22 24
R
G
= 10, L = 500H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
(
O
N
)
I
,
T
U
R
N
-
O
N

D
E
L
A
Y

T
I
M
E
(
n
s
)
10
11
12
13
14
15
6 4 2 10 12 14 16 8 18 20 22 24
16
17
18
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
R
G
= 10, L = 500H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
I
,
R
I
S
E

T
I
M
E
(
n
s
)
0
4
16
12
8
6 4 2 10 12 14 16 8 18 20 22 24
20
32
28
24
R
G
= 10, L = 500H, V
CE
= 390V
T
J
= 125
o
C OR T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (Continued)
4 8 2
95
6
85
90
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
(
O
F
F
)
I
,

T
U
R
N
-
O
F
F

D
E
L
A
Y

T
I
M
E
(
n
s
)
12
115
16 14
105
110
10
100
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 10, L = 500H, V
CE
= 390V
18 20 22 24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
I
,

F
A
L
L

T
I
M
E
(
n
s
)
10
30
20
50
70
40
60
R
G
= 10, L = 500H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
4 8 2 6 12 16 14 10 18 20 22 24
80
90
I
C
E
,

C
O
L
L
E
C
T
O
R

T
O

E
M
I
T
T
E
R

C
U
R
R
E
N
T

(
A
)
0
50
100
13 7 8 9 10 12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
14 15
250
6
PULSE DURATION = 250s
DUTY CYCLE < 0.5%, V
CE
= 10V
16
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
V
G
E
,

G
A
T
E

T
O

E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
)
Q
G
, GATE CHARGE (nC)
2
14
0
0 20 10 30
4
10
40
I
G(REF)
= 1mA, R
L
= 25, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
50 60 70 80
6
8
12
16
V
CE
= 600V
I
CE
= 24A
I
CE
= 12A
I
CE
= 6A
0
0.2
0.4
50 75 100
T
C
, CASE TEMPERATURE (
o
C)
0.6
1.0
125 25 150
1.2
0.8
E
T
O
T
A
L
,

T
O
T
A
L

S
W
I
T
C
H
I
N
G

R
G
= 10, L = 500H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
E
N
E
R
G
Y

L
O
S
S

(
m
J
)
0.1
10 100
R
G
, GATE RESISTANCE ()
1
5 1000
I
CE
= 12A
I
CE
= 24A
I
CE
= 6A
10
T
J
= 125
o
C, L = 500H,
E
TOTAL
= E
ON2
+ E
OFF
E
T
O
T
A
L
,

T
O
T
A
L

S
W
I
T
C
H
I
N
G

E
N
E
R
G
Y

L
O
S
S

(
m
J
)
V
CE
= 390V, V
GE
= 15V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
,

C
A
P
A
C
I
T
A
N
C
E

(
n
F
)
C
RES
0 5 10 15 20 25
0
0.5
1.0
2.0
2.5
3.0
1.5
FREQUENCY = 1MHz
C
OES
C
IES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8 9
1.9
10 12
2.0
2.2
2.1
11 13 14 15 16
2.3
2.4
V
C
E
,

C
O
L
L
E
C
T
O
R

T
O

E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
)
I
CE
= 18A
I
CE
= 12A
I
CE
= 6A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250s, T
J
= 25
o
C
0.5 1.0 1.5 2.5
I
E
C
,

F
O
R
W
A
R
D

C
U
R
R
E
N
T

(
A
)
V
EC
, FORWARD VOLTAGE (V)
0 2.0
0
4
6
8
10
25
o
C 125
o
C
2
14
12
PULSE DURATION = 250s
DUTY CYCLE < 0.5%,
60
40
20
0
t
r
r
,

R
E
C
O
V
E
R
Y

T
I
M
E
S

(
n
s
)
I
EC
, FORWARD CURRENT (A)
1 12 11 8
70
50
30
10
2 3 4 5 6 7 9 10
80
90
25
o
C t
rr
25
o
C t
a
25
o
C t
b
125
o
C t
b
125
o
C t
a
dI
EC
/dt = 200A/s
125
o
C t
rr
300 400 500 700 800
t
r
r
,

R
E
C
O
V
E
R
Y

T
I
M
E
S

(
n
s
)

di
EC
/dt, RATE OF CHANGE OF CURRENT (A/s)
200 600
10
5
25
35
45
55
15
20
30
40
50
60
65
900 1000
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 12A, V
CE
= 390V
300
200
100
0
Q
r
r
,

R
E
V
E
R
S
E

R
E
C
O
V
E
R
Y

C
H
A
R
G
E

(
n
c
)
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/s)
1000 500
350
250
150
50
200 300 400 900
400
600 700 800
125
o
C I
EC
= 12A
125
o
C I
EC
= 6A
25
o
C I
EC
= 6A
25
o
C I
EC
= 12A
V
CE
= 390V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves Unless Otherwise Specified (Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z

J
C
,
N
O
R
M
A
L
I
Z
E
D

T
H
E
R
M
A
L

R
E
S
P
O
N
S
E
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
0.10
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS
R
G
= 10
L = 500H
V
DD
= 390V

+
-
HGTP12N60A4D
DUT
DIODE TA49371
t
fI
t
d(OFF)I t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handlers body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as ECCOSORBD LD26 or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V
GEM
. Exceeding the rated V
GE
can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
CE
) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
MAX1
or f
MAX2
; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t
d(ON)I
are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JM
. t
d(OFF)I

is important when controlling output ripple under a lightly
loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON2
). The
allowable dissipation (P
D
) is defined by P
D
= (T
JM
- T
C
)/R
JC
.
The sum of device switching and conduction losses must
not exceed P
D
. A 50% duty factor was used (Figure 3) and
the conduction losses (P
C
) are approximated by
P
C
= (V
CE
x I
CE
)/2.
E
ON2
and E
OFF
are defined in the switching waveforms
shown in Figure 25. E
ON2
is the integral of the
instantaneous power loss (I
CE
x V
CE
) during turn-on and
E
OFF
is the integral of the instantaneous power loss
(I
CE
x V
CE
) during turn-off. All tail losses are included in the
calculation for E
OFF
; i.e., the collector current equals zero
(I
CE
= 0).
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS