AMPLIFIERS WITH TRANSISTORS

DC TRANSISTORS BIASING
in active region aF

Op-amp amplifier revisited VTC

Remark: input signal - low

enough for the amplifier to work in a linear region around the OP
2/13

Necessity for dc transistor biasing

transistor utilization as amplifier (CS, CE) in active region (aF), the transistor operates around the dc operating point (OP)

VPS dc supply

VI set the OP: (VO, IO) vi input voltage (to be amplified) vo output voltage (amplified voltage) superposition of the variable signal over the dc regime

Operation of the amplifier (CS, CE)

VPS

Who is responsible for the gain ?

Voltage transfer characteristic vO(vI ), inverting amplifier

slope voltage gain

Small signal: operation of the amplifier in the narrow linear region around the OP

Maximum swing of the input signal:

often determined based on the linearity considerations

DC biasing setting the OP

Operation of the transistor as amplifier:
the transistor biased as close as possible to the middle of the aF the instantaneous (mobile) operating point - in the active region the input variable signal kept small (linear region around OP)

OP: stabile and predictibile independent of the transistor parameters

MOSFET biasing
1st variant 3 resistors,
single supply

VGS

RG 2 VPS = RG1 + RG 2

I D = (VGS VTh ) 2

V DS = V PS R D I D

RD

OP (VDS , I D )
simple the current in the OP, ID, depends on the transistor parameters, and VTh cannot assure the stability of the quiescent point.

Example 1

RG1=7.6M; RG2=2.4M; RD=29.1K; VPS=5V VTh =0.8V; =500A/V2. OP ?

RD

VGS

RG 2 2.4 = VPS = 5 = 1.2V RG1 + RG 2 7.6 + 2.4

2

I D = (VGS VTh ) 2 = 500 (1.2 0.8) = 80A

VDS = VPS RD I D = 5 29.1 0.08 = 2.67 V VDSsat = VGS VTh = 1.2 0.8 = 0.4V VDS > VDSsat the transisto r is in a F

(VPS + VDSsat ) / 2 = (5 + 0.4 ) / 2 = 2.7 V VDS = 2.67 V

The transistor is biased in the middle of its active region

Q ( 2.67 V, 80A)

Resize the circuit to have the transistor in the middle of its active region for ID=120A

MOSFET biasing
2nd variant 4 resistors, single supply
VGG

OPTIONAL

RG 2 VPS = RG1 + RG 2

VGS = VGG R S I D

I D = (VGS VTh ) 2

VDS = VPS ( RD + RS ) I D
unknown: VGS and ID 2nd degree equations system. choose the suitable ID value.

MOSFET biasing
2nd variant 4 resistors, single supply

OPTIONAL
- cont.

VGS = VGG R S I D

I D = (VGS VTh ) 2
VGS depends also on the drain current ID ID , RSID , VGS , ID the circuit withstands to the variation tendency of ID negative feedback due to RS
ensure the OP stability for variation of certain parameters

increases the complexity of computational relations

Example 2

OPTIONAL
RG1=3M; RG2=1M; RD=3K; RS=1K; VPS=20V VTh =2V; =0,5mA/V2.
? What is the OP ?

VGG

RG 2 1 = VPS = 20 = 5V RG1 + RG 2 3 +1
VGS = VGG I D RS
ID1 is not suitable; results VGS<0

I D = (VGS VTh ) 2
ID2-8ID+9=0; ID in mA
VDS = VPS I D ( RD + RS ) = = 20 1,35(3 + 1) = 14,6V
ID1=6,65mA and ID2=1,35mA

ID=ID2=1,35mA

VD =?

VS =?

Q(14,6V; 1,35mA)

Example 3
MOSFET:

OPTIONAL
VTh =2V; =0,25mA/V2; VPS=20V
? Choose the resistances to obtain ID=1mA in the OP .

I D = (VGS VTh ) 2
VGG

VGS = VTh +

ID

1 = 2+ = 4V 0,25

VDSsat=VGS-VTh=2V
T- active region VDS(2V; 20V).

Q : We chose VDS=9V
VDS = VPS ( RD + RS ) I D
VPS VDS 20 9 = = 11K RD + RS = 1 ID

Example 3 cont.
MOSFET:

OPTIONAL
VTh =2V; =0,25mA/V2 ? Choose the resistances to obtain ID=1mA in the OP

RD, RS also sets the gain. For now we can consider VS=4V across RS :
VS 4 = = 4K RS = ID 1
RD = 11 4 = 7 K VGG = VGS + VS = 4 + 4 = 8V

RG1 = 300 K; RG 2 = 200 K

MOSFET biasing
3rd variant current source, single and differential supply
Usual in integrated circuits: biasing with current sources ID independent of the transistor parameters

VDS = VPS RD I + VGS VGG

Voltage across the current source: VGG-VGS

VDS = VPS RD I + VGS

BJT biasing, usual variant in discrete circuits

oppositely to MOSFET, for BJT appears: - base current IB different from zero - through collector and emitter do not flow exactly the same current

+1 I E = I C + I B = ( + 1) I B = IC One can approximate I C I E

precise calculation: make use of IB approximate calculation: neglecting IB compared to the current through the resistive voltage divider in the base of the transistor

I C = I B

OP (VCE , I C )

 Approximate calculation

VBB

RB 2 = VPS RB1 + RB 2

VBB VBE IC I E = RE
VCE = VPS I C RC I E RE VPS I C ( RC + RE )
RE is very important for setting and stabilizing the OP, through a negative feedback mechanism

IB much smaller than the

current flowing through the base divider

IC; IE; VRE; VBE; IC

Precise calculation

IC=IE+IB IE

VCE = VPS I C RC I E RE VPS I C ( RC + RE )

IE insensitive to variations:

RB RB R > 10 RE >> E ( + 1) RB1, RB2 small values for the independence of OP on

Thevenin theorem: VBB, RB

VBB = RB I B + VBE + RE I E
IE=(+1)IB

RB1, RB2 high values for the high input resistance IE insensitive to temperature variations due to VBE

VBB VBE IE = RE + RB /( + 1)

VBB >> 0.1V

a VBE variation of 0,1V can be neglected vis a vis the VBB=35V

Example 4

VPS=15V; RB1=10k; RB2=4.7k; RE =1.5k; RC=1.8k; =150 Approximate calculation IC = ? VCE =? VC = ? VE = ? Exact calculation IC = ? IC = 2.7mA IC = 2.73mA VCE = 6V VC = 10.1V VE = 4.1V

Example 5
RE =

Usually we choose:

VBB

1 1 = VAl = 12 = 4V 3 3

VBB
RE > 10

VBB VBE (1/ 3) 12 0.7 = = 1.65k IE 2 RB 2 1 = VPS = VPS R B1 = 2 R B 2 RB1 + RB 2 3

RB

RB1 RB 2 < 10 RE RB1 + RB 2

RB 2 < 24.75k

Verification: Values of the resistances VBB VBE 4 0.7 I = = = 1.84mA E so that T is biased in aF RE + RB /( + 1) 1.65 + 14.7 /(100 + 1) @ IC=2mA ? R E = 1 .5 k Adjust I E = 2mA VPS=12V, =100

RB2=22K; RB1=44K

BJT biasing,

differential supply

IE = I
VPS VBE IE = RE + RB /( + 1) VCE = 2VPS RC I C RE I E

VCE

RB = VPS RC I C + VBE + I +1

Voltage across the current source:

VPS VBE

RB I +1