Académique Documents
Professionnel Documents
Culture Documents
A2
DESCRIPTION The Z01xxxN series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume applications using surface mount technology. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360 conductionangle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 50 mA Ttab= 90 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Value 1 8.5 8 0.35 10 50 - 40, + 150 - 40, + 125 260 C C A2s A/s Unit A A SOT223 (Plastic)
I2 t dI/dt
Unit V
1/6
Z01xxxN
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-t) Rth(j-t) Junction to ambient Junction to leads for D.C Junction to leads for A.C 360 conduction angle (F=50Hz) Parameter Value 60 30 25 Unit C/W C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=140 Tj= 25C Quadrant 03 I-II-III IV VGT VGD tgt VD=12V (DC) RL=140 VD=VDRM RL=3.3k VD=VDRM IG = 40mA IT = 1.4A dIG/dt = 0.5A/s IT= 50 mA Gate open IG= 1.2 IGT Tj= 25C I-II-III-IV MAX MAX MAX MIN TYP 3 5 Sensitivity 07 5 7 1.5 0.2 2 09 10 10 10 25 25 V V s mA Unit IGM = 1 A (tp = 20 s)
IH * IL
7 7 14
10 10 20 1.8 10
10 10 20
25 25 50
mA mA
ITM= 1.4A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 0.44 A/ms
Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C
V A
* For either polarity of electrode A2 voltage with reference to electrodeA 1 ORDERING INFORMATION
Z
TRIAC TOP GLASS CURRENT
2/6
01
07
SENSITIVITY
N
PACKAGE : N = SOT223 VOLTAGE
Z01xxxN
Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Ttab).
P(W) 1.6
180
O
P (W)
Ttab (oC)
1.6
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4
= 180 = 120 = 90 = 60 = 30
o o o o
-90
Rth(j-t) oC/W
I T(RMS) (A)
0.5 0.6 0.7 0.8 0.9 1.0
0.2 0.0 0
Tamb (oC)
20
40
Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a) 1.00
0.10
Stan dar d foo t print , e(Cu) =35 m
tp( s)
1 E+2 5 E +2
Fig.5 : Relativevariation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
8
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt
Tj initial = 25oC
Ih
2
Tj(oC)
Number of cycles
-40
-20
20
40
60
80
100
120 140
10
100
1000
3/6
Z01xxxN
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A2 s)
I TM (A)
10 Tj initial = 25 oC
Tj initial o 25 C
100
I TSM
10
1
Tj max
1
I2t
tp(ms)
0.1 1
10
0.1
4/6
Z01xxxN
PACKAGE MECHANICAL DATA SOT223 (Plastic) DIMENSIONS REF.
V1
Millimeters
1.50 0.02 2.95 0.65 0.25 6.30 2.3 4.6 3.30 6.70 0.63 0.85 1.10 0.65 3.70 7.30 0.67 1.05 1.30 0.130 0.264 1.70 0.10 3.15 0.85 0.35 6.70 0.059 0.001 0.090 0.026 0.010 0.248
Inches
0.067 0.004 0.124 0.033 0.014 0.264 0.091 0.181 0.146 0.287 0.026 0.041 0.051
B B1 C D e e1 E H
H E
O S t V
e S
V1 V2
Weight : 0.11 g
FOOT PRINT
5/6
Z01xxxN
MARKING Type Z0103DN Z0103MN Z0103SN Z0103NN Z0107DN Z0107MN Z0107SN Z0107NN Z0109DN Z0109MN Z0109SN Z0109NN Z0110DN Z0110MN Z0110SN Z0110NN Marking Z3D Z3M Z3S Z3N Z7D Z7M Z7S Z7N Z9D Z9M Z9S Z9N Z0D Z0M Z0S Z0N
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
6/6