BANASTHALI VIDYAPITH PERIODICAL TEST II (Oct-2013) CLASS: M.TECH I SEM.

VLSI DESIGN

SUBJECT: SOLID STATE DEVICE MODELLING & SIMUALTION

NUMBER OF STUDENTS = 70

Note: attempt any 4 questions. All questions carry equal marks. Write specific answers, unnecessary long answer can deduct your marks. You19can -3 use the following parameters for silicon at 300 K: Eg=1.12 eV; Nc=2.8 X1019 cm-3; NV=1.04 X10 cm MAX. MARKS: 10 TIME: 1:30 Hrs.

Q.1. Plot (i) Energy band diagram (ii) the charge distribution, (iii) electric-field distribution, and (iv) potential distribution of an ideal MOS diode with n-type substrate under inversion. (1+0.5+0.5+0.5) Q.2. (a) C-V curves measured for two MOS capacitors (a and b) with the same gate area are compared below.

(i) Is the semiconductor n-type or p-type? (0.25) (ii) How do the gate oxide thicknesses for the two capacitors compare? Explain. (0.50) (iii) Which capacitor has higher doping in the semiconductor? Explain. (0.75) (b) When the linear dimensions of MOSFET are scaled down by a factor of 10 based on the constant field scaling, what is the scaling factor for the corresponding power dissipation per circuit and circuit delay time? (1) 16 -3 Q.3. For an ideal Si-Si02 MOS diode with d = 10 nm, NA = 5 X 10 cm , find the maximum width of surface depletion region. Also find the applied Voltage and the electric field at the interface required to bring about strong inversion. Q.4. A Si transistor has Dp of 10 cm2/s, W of 0.5 m and common base current gain equal to 0.998. Find the cut-off frequencies of the transistor for common emitter and common base configurations. Neglect the emitter and collector delays. Q.5 A silicon p-n-p transistor has impurity concentrations of 5 x 10l8, 2 x 10l7and 1016 cm-3 in the emitter, base, and collector, respectively and the diffusion constants of minority carriers in the emitter, base, and collector are 52, 40, and 115 cm2/s, respectively; and the corresponding lifetimes are 10-8, 10-7 , 10-6 s . The base width is 1.0 m, and the device cross-sectional area is 0.2 mm2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5 V, calculate emitter efficiency of the transistor.

P.T.O.

Q.6 (a) The power generated internally within a double-heterojunction LED is 28.4 mW at a drive current of 60 mA. Determine the peak emission wavelength from the device when the radiative and nonradioactive recombination lifetimes of the minority carriers in the active region are equal. (1.5) (b) Calculate the ratio of the stimulated emission rate to the spontaneous emission rate for an incandescent lamp operating at a temperature of 1000 K. It may be assumed that the average operating wavelength is 0.5 m. (1) Q.7 Discuss the mechanism of optical feedback to provide oscillation and hence amplification within the laser. Indicate how this provides a distinctive spectral output from the device. The longitudinal modes of a gallium arsenide injection laser emitting at a wavelength of 0.87 m are separated in frequency by 278 GHz. Determine the length of the optical cavity and the number of longitudinal modes emitted. The refractive index of gallium arsenide is 3.6. (1+1.5) *************