BST82

N-channel enhancement mode eld-effect transistor

Rev. 03 26 July 2000 Product specication

1. Description
N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: BST82 in SOT23.

2. Features
I I I I TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.

3. Applications
I Relay driver I High speed line driver I Logic level translator.

c c

4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23, simplied outline and symbol Description gate (g)
3

Simplied outline

Symbol
d

source (s) drain (d)

g
03ab44

03ab30

SOT23

N-channel MOSFET

1.

TrenchMOS is a trademark of Royal Philips Electronics.

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

5. Quick reference data

Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 C Tsp = 25 C; VGS = 5 V Tsp = 25 C VGS = 5 V; ID = 150 mA Typ 5 Max 100 190 0.83 150 10 Unit V mA W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter

6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s Tsp = 25 C; VGS = 5 V; Figure 2 and 3 Tsp = 100 C; VGS = 5 V; Figure 2 Tsp = 25 C; pulsed; tp 10 s; Figure 3 Tsp = 25 C; Figure 1 Conditions Tj = 25 to 150 C Tj = 25 to 150 C; RGS = 20 k Min 65 65 Max 100 100 20 190 120 0.8 0.83 +150 +150 190 0.8 Unit V V V mA mA A W C C mA A

Source-drain diode

9397 750 07223

Philips Electronics N.V. 2000. All rights reserved.

Product specication

Rev. 03 26 July 2000

2 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

03aa17

120
P der (%) 100

03aa25

120
Ider (%) 100

80

80

60

60

40

40

20

20

0 0 25 50 75 100 125
Tsp

150 (oC)

175

25

50

75

100

125

150 175 Tsp (oC)

P tot P der = ---------------------- 100 % P

tot ( 25 C )

VGS 5 V ID I der = ------------------ 100 % I

D ( 25 C )

Fig 1. Normalized total power dissipation as a function of solder point temperature.

1 ID (A) 10-1 RDSon = VDS/ ID

Fig 2. Normalized continuous drain current as a function of solder point temperature.

03aa60

tp = 10 s 100 s

1 ms 10 ms D.C.
P

10-2

tp T

100 ms

tp T

10-3 1 10 102

Tsp = 25oC VDS (V) 103

Tsp = 25 C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 07223

Philips Electronics N.V. 2000. All rights reserved.

Product specication

Rev. 03 26 July 2000

3 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

7. Thermal characteristics
Table 4: Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions mounted on a metal clad substrate; Figure 4 mounted on a printed circuit board; minimum footprint Value 150 350 Unit K/W K/W

7.1 Transient thermal impedance

103 Zth(j-sp) (K/W) 102 = 0.5 0.2 0.1 10 0.05 0.02 1 single pulse
tp T t P tp T
03aa57

0.1 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10

Mounted on a metal substrate.

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

9397 750 07223

Philips Electronics N.V. 2000. All rights reserved.

Product specication

Rev. 03 26 July 2000

4 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specied Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 10 A; VGS = 0 V Tj = 25 C Tj = 55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150 C Tj = 55 C IDSS drain-source leakage current VDS = 60 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 5 V; ID = 150 mA; Figure 7 and 8 Tj = 25 C Tj = 150 C Dynamic characteristics gfs Ciss Coss Crss ton toff forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time VDD = 50 V; RD = 250 ; VGS = 10 V; RG = 50 ; RGS = 50 IS = 300 mA; VGS = 0 V; Figure 13 IS = 300 mA; dIS/dt = 100 A/s; VGS = 0 V; VDS = 25 V VDS = 5 V; ID = 175 mA; Figure 11 VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 350 25 8.5 5 3 12 40 15 10 10 15 mS pF pF pF ns ns 5 10 23 0.01 10 1.0 10 100 A A nA 1 0.6 2 3.5 V V V 100 89 130 V V Min Typ Max Unit Static characteristics

Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.95 30 30 1.5 V ns nC

9397 750 07223

Philips Electronics N.V. 2000. All rights reserved.

Product specication

Rev. 03 26 July 2000

5 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

03aa63

03aa65

0.5 ID (A) 0.45 0.4 0.35 0.3 0.25 0.2

0.7 Tj = 25oC VGS = 10V 5V ID (A) 0.6 0.5 0.4 0.3 3.5 V 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS (V) 2 0 1 2 3 4 5 6 7 VGS (V) 8 Tj = 25oC 150oC VDS > ID X RDSon

4V

0.15 0.1 0.05 0 3V

Tj = 25 C

Tj = 25 C and 150 C; VDS > ID RDSon

Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
03aa64

Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
03aa29

12 RDSon 11 () 10 9 8 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 3V 3.5V

Tj = 25oC

3 a 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 140 180 Tj (oC)

4V

5V

VGS = 10V

0.4 ID (A)

0.5

Tj = 25 C

R DSon a = --------------------------R DSon ( 25 C )

Fig 7. Drain-source on-state resistance as a function of drain current; typical values.

Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.

9397 750 07223

Philips Electronics N.V. 2000. All rights reserved.

Product specication

Rev. 03 26 July 2000

6 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

3
VGS(th) (V) 2.5 typ

03aa34

10-1 I D
(A) 10-2

03aa37

10-3

min

typ

1.5
min

10-4

1
10-5

0.5

0 -60 -20 20 60 100 140 180 Tj (oC)

10-6
0 0.5 1 1.5 2 2.5 3 VGS (V)

ID = 1 mA; VDS = VGS

Tj = 25 C; VDS = 5 V

Fig 9. Gate-source threshold voltage as a function of junction temperature.

03aa66

Fig 10. Sub-threshold drain current as a function of gate-source voltage.

03aa68

0.5 gfs 0.45 (S) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0

102 VDS > ID X RDSon Tj = 25oC Ciss, Coss, Crss (pF)

Ciss

150oC

10

Coss

Crss 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) 0.7 1 10-1 1 10 VDS (V) 102

Tj = 25 C and 150 C; VDS > ID RDSon

VGS = 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of drain current; typical values.

Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 07223

Philips Electronics N.V. 2000. All rights reserved.

Product specication

Rev. 03 26 July 2000

7 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

03aa67

1 IS (A) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0

VGS = 0 V

150oC

Tj = 25oC

0.2

0.4

0.6

0.8

1.2 VSD (V)

1.4

Tj = 25 C and 150 C; VGS = 0 V

Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

9397 750 07223

Philips Electronics N.V. 2000. All rights reserved.

Product specication

Rev. 03 26 July 2000

8 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

9. Package outline
Plastic surface mounted package; 3 leads SOT23

HE

v M A

Q A A1

1
e1 e bp

2
w M B detail X Lp

1 scale

2 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1

OUTLINE VERSION SOT23

REFERENCES IEC JEDEC TO-236AB EIAJ

EUROPEAN PROJECTION

ISSUE DATE 97-02-28 99-09-13

Fig 14. SOT23.

9397 750 07223 Philips Electronics N.V. 2000. All rights reserved.

Product specication

Rev. 03 26 July 2000

9 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

10. Revision history

Table 6: 03 02 01 Revision history CPCN HZG303 Description Product specication; third version; supersedes BST82_CNV_2 of 970623. Converted from VDMOS (Nijmegen) to TrenchMOS technology (Hazel Grove). 19970623 19901031 Product specication; second version. Product specication; initial version.

Rev Date 20000726

9397 750 07223

Philips Electronics N.V. 2000. All rights reserved.

Product specication

Rev. 03 26 July 2000

10 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

11. Data sheet status

Datasheet status Objective specication Preliminary specication Product status Development Qualication Denition [1] This data sheet contains the design target or goal specications for product development. Specication may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains nal specications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

Product specication

Production

[1]

Please consult the most recently issued data sheet before initiating or completing a design.

12. Denitions
Short-form specication The data in a short-form specication is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values denition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specied use without further testing or modication.

13. Disclaimers
Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specied.

9397 750 07223

Philips Electronics N.V. 2000 All rights reserved.

Product specication

Rev. 03 26 July 2000

11 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

Philips Semiconductors - a worldwide company

Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 14 099 6161, Fax. +33 14 099 6427 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: see Austria India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553

For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825

Internet: http://www.semiconductors.philips.com

(SCA70)

9397 750 07223

Philips Electronics N.V. 2000. All rights reserved.

Product specication

Rev. 03 26 July 2000

12 of 13

Philips Semiconductors

BST82
N-channel enhancement mode eld-effect transistor

Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Philips Electronics N.V. 2000.

Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 July 2000 Document order number: 9397 750 07223