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2SC4927

Silicon NPN Triple Diffused

Application
TV/character display horizontal deflection output

Features
High breakdown voltage VCES = 1500 V Built-in damper diode type Isolated package TO-3PFM

Outline
TO-3PFM

1. Base 2. Collector 3. Emitter

1 ID

2SC4927
Absolute Maximum Ratings (Ta = 25C)
Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25C. Symbol VCES VEBO IC IC(peak) IC(surge) PC* Tj Tstg ID
1

Ratings 1500 6 8 9 18 50 150 55 to +150 8

Unit V V A A A W C C A

Electrical Characteristics (Ta = 25C)


Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Fall time Symbol V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf Min 6 Typ Max 500 25 5 1.5 2.0 0.5 Unit V A V V V s Test conditions IE = 500 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 6 A, IB = 1.2 A IC = 6 A, IB = 1.2 A IF = 8 A ICP = 6 A, IB1 = 1.2 A, IB2 2.4 A, fH = 31.5 kHz

2SC4927
Maximum Collector Power Dissipation Curve 80 Pc (W) 60 Collector Power Dissipation 40 20 0

50

100

150 Tc (C)

200

Case Temperature

Area of Safe Operation 20 (100 V, 18 A) I C (A) 16 f = 15.75 kHz Ta = 25 C

For picture tube arcing

Collector Current

12

8 (800 V, 4 A) 0.5 mA 0 800 1200 1600 2000 400 Collector to Emitter Voltage V CE (V)

Typical Output Characteristics 10


2.0 A 1.4 A 1.8 A 1.6 A

I C (A)

1.2 A 1.0 A 0.8 A

Collector Current

0.6 A

0.4 A
0.2 A

Tc = 25C 0

IB = 0 10 V CE (V)

5 Collector to Emitter Voltage

2SC4927
DC Current Transfer Ratio vs. Collector Current 100 h FE 50 75C 20 10 5 Tc = 25C 25C V CE = 5 V

DC Current Transfer Ratio

2 1 0.1

0.2 0.5 1 2 5 Collector Current I C (A)

10

Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 5 2 1 0.5 0.2 0.1 Tc = 25C 25C 75C 0.2 0.5 1 2 5 Collector Current I C (A) 10 IC / IB = 5

0.05 0.1

2SC4927
Base to Emitter Saturation Voltage vs. Collector Current 10 Base to Emitter Saturation Voltage V BE(sat) (V) 5 IC / I B = 5

2 1 0.5 75C 0.2

Tc = 25C

25C

0.1

0.2 0.5 1 2 5 Collector Current I C (A)

10

Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10

8 IC = 4 A 6A 8A

2 0 Tc = 25C 0.1 0.2 0.5 1 2 Base Current I B (A)

2SC4927

When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachis permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachis semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachis products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachis sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachis products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.

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