Ordering number : ENN7912

FW342

N-Channel and P-Channel Silicon MOSFETs

FW342
Features

General-Purpose Switching Device Applications

For motor drives, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting.

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW100ms) Drain Current (PW10s) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg duty cycle1% duty cycle1% duty cycle1% Mounted on a ceramic board (1500mm20.8mm)1unit, PW10s Mounted on a ceramic board (1500mm20.8mm), PW10s Conditions N-channel 30 20 6 7 10 24 1.8 2.2 150 --55 to +150 P-channel --30 20 --5 --5.5 --9 --20 Unit V V A A A A W W C C

Electrical Characteristics at Ta=25C

Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=3A, VGS=4.5V ID=3A, VGS=4V 1.2 4.6 7.8 25 35 37 33 49 52 30 1 10 2.6 V A A V S m m m Symbol Conditions Ratings min typ max Unit

Marking : W342

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004 TS IM TA-101197 No.7912-1/6

FW342
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain Miller Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain Miller Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0 VDS=-30V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-5A ID=-5A, VGS=-10V ID=-3A, VGS=-4.5V ID=-3A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-10V, VGS=--10V, ID=-5A VDS=-10V, VGS=--10V, ID=-5A VDS=-10V, VGS=--10V, ID=-5A IS=--5A, VGS=0 --30 --1 10 --1.2 4.5 7.5 41 62 70 1000 195 150 13 82 87 55 16.5 2.5 2.5 -0.85 --1.5 53 87 98 --2.6 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A IS=6A, VGS=0 Ratings min typ 850 170 125 12.5 108 77 61 16 3.4 2.4 0.84 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V

Package Dimensions unit : mm 2129

8 5
0.3

Electrical Connection

1.8max

1 5.0

0.2

1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8

1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1

1 2 3 4

4.4

6.0

Top view

0.595

1.27

0.43

0.1

1.5

No.7912-2/6

FW342
Switching Time Test Circuit
[N-channel]
VIN 10V 0V VIN PW=10s D.C.1% ID=6A RL=2.5 VDD=15V 0V --10V VIN PW=10s D.C.1% ID= --5A RL=3

[P-channel]
VIN VDD= --15V

VOUT

VOUT

FW342 P.G 50

FW342 P.G 50

6.0

ID -- VDS
10.0V

[Nch]

6.0

ID -- VGS
VDS=10V

[Nch]

4.5V

3.5

5.0

4.0

3.0

V
Drain Current, ID -- A

5.0

Drain Current, ID -- A

4.0

4.0

3.0

6.0V

3.0

2.0

2.0

25C
0 0.5 1.0 1.5 2.0

1.0

1.0

0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

0 2.5 3.0 3.5 4.0

Drain-to-Source Voltage, VDS -- V

100

IT07380

RDS(on) -- VGS

Gate-to-Source Voltage, VGS -- V

70

--25

VGS=2.5V

Ta= 7 5C

IT07381

[Nch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m

RDS(on) -- Ta

[Nch]

Static Drain-to-Source On-State Resistance, RDS(on) -- m

90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16

60

50

40

ID=6A

3A I D=

=4V , VGS

ID=3A

30

A, I D=3

=4.5 VGS

20

=10V A, V GS 6 = ID

10 10 --60

--40

--20

20

40

60

80

100

120

140

160

Gate-to-Source Voltage, VGS -- V

IT07382

Ambient Temperature, Ta -- C

IT07383

No.7912-3/6

FW342
10

yfs -- ID
VDS=10V

[Nch]

Forward Transfer Admittance, yfs -- S

7 5

10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2

IF -- VSD

[Nch] VGS=0

3 2

C 5 --2
= Ta

75

1.0 7 5

3 0.1

0.01 2 3 5 7 1.0 2 3 5

Drain Current, ID -- A
7 5

7 10 IT07384

0.2

0.4

Ta=7 5C 25C
0.6

--25C
0.8

C 25

Forward Current, IF -- A

1.0

1.2 IT07385

SW Time -- ID

[Nch] VDD=15V VGS=10V

3 2

Ciss, Coss, Crss -- VDS

Diode Forward Voltage, VSD -- V

[Nch] f=1MHz

Switching Time, SW Time -- ns

3 2

Ciss, Coss, Crss -- pF

100 7 5 3 2 10 7 5 3 2 0.1

td(off)

1000 7 5 3 2

Ciss

tf
tr

td(on)

Coss
Crss

100 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 0 5 10

15

20

25

30 IT07387

Drain Current, ID -- A
10 9

IT07386

Drain-to-Source Voltage, VDS -- V

VGS -- Qg

[Nch]
5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2

ASO

[Nch] 10s 10 0 1m s s

Gate-to-Source Voltage, VGS -- V

VDS=10V ID=6A

IDP=24A ID=6A

Drain Current, ID -- A

7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18

10

ms

10
Operation in this area is limited by RDS(on).

0m

DC

10

op

era

tio

0.01 0.1

Ta=25C Single pulse Mounted on a ceramic board (1500mm20.8mm) 1unit

2 3 5 7 1.0 2 3 5 7 10 2 3 5

Total Gate Charge, Qg -- nC

--5.0

IT07388

ID -- VDS
V --10 .0
--3 .5V

Drain-to-Source Voltage, VDS -- V

--5

IT07389

[Pch]

ID -- VGS

[Pch]

VDS= --10V
--4

--4.0

--6. 0V

Drain Current, ID -- A

0V

--3.0

--3.0V

Drain Current, ID -- A

5V -4.

--3

--4 .

--2.0

--2

Ta=7 5C
0 --0.5 --1.0 --1.5 --2.0

--1.0

VGS= --2.5V

--1

0 0

0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --2.5 --3.0 --3.5 --4.0

Drain-to-Source Voltage, VDS -- V

IT07390

Gate-to-Source Voltage, VGS -- V

25 C

--25C

IT07391

No.7912-4/6

FW342
140

RDS(on) -- VGS
ID= --5A

[Pch] Ta=25C

140

RDS(on) -- Ta

[Pch]

Static Drain-to-Source On-State Resistance, RDS(on) -- m

120

Static Drain-to-Source On-State Resistance, RDS(on) -- m

120

ID= --3A
100

100

80

80

60

60

40

40

V = --4 , VGS A 3 V I D= --4.5 S= VG , --3A I D= V = --10 5A, V GS I D= --

20 0 0 --2 --4 --6 --8 --10 --12 --14 --16

20 0 --60

--40

--20

20

40

60

80

100

120

140

160

Gate-to-Source Voltage, VGS -- V

10

yfs -- ID

IT07392

Ambient Temperature, Ta -- C
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2

IT07393

[Pch]

IF -- VSD

[Pch] VGS=0

Forward Transfer Admittance, yfs -- S

VDS= --10V

5C 25C

C 25

1.0 7 5 --0.1

--1.0

Drain Current, ID -- A
3 2

7 --10 IT07394

--0.01 --0.2

--0.4

Ta= 7

--0.6

--25 C
--0.8

= Ta

--2

C 75

Forward Current, IF -- A

C 5

--1.0

--1.2 IT07395

SW Time -- ID
VDD= --15V VGS= --10V
td(off)

[Pch]

3 2

Ciss, Coss, Crss -- VDS

Diode Forward Voltage, VSD -- V

[Pch] f=1MHz

Switching Time, SW Time -- ns

7 5 3 2

Ciss, Coss, Crss -- pF

100

1000 7 5 3 2

Ciss

tf
tr

Coss
Crss

10 7 5 3 --0.1

td(on)

100 7 5

--1.0

Drain Current, ID -- A
--10 --9

--10 IT07396

--5

--10

--15

--20

--25

--30 IT07397

Drain-to-Source Voltage, VDS -- V

5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2

VGS -- Qg
VDS= --10V ID= --5A

[Pch]

ASO
IDP= --20A ID= --5A
10

[Pch] 10s 10 0 s 1m s

Gate-to-Source Voltage, VGS -- V

--8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 16 18

Drain Current, ID -- A

10
Operation in this area is limited by RDS(on).

ms

DC

10
op era

0m

s
n

tio

--0.01 --0.1

Ta=25C Single pulse Mounted on a ceramic board (1500mm20.8mm) 1unit

2 3 5 7 --1.0 2 3 5 7 --10 2 3 5

Total Gate Charge, Qg -- nC

IT07398

Drain-to-Source Voltage, VDS -- V

IT07399

No.7912-5/6

FW342
Allowable Power Dissipation(FET 1), PD -- W
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

PD(FET 1) -- PD(FET 2)

[Nch, Pch]

Allowable Power Dissipation, PD -- W

Mounted on a ceramic board (1500mm20.8mm), PW10s

2.5 2.2 2.0 1.8 1.5

PD -- Ta [Nch, Pch] Mounted on a ceramic board (1500mm20.8mm), PW10s

To t

al

di

ss

ip

1.0

1u

ni

ati

on

0.5

0 0 20 40 60 80 100 120 140 160

Allowable Power Dissipation(FET 2), PD -- W

IT07400

Ambient Temperature, Ta -- C

IT07401

Note on usage : Since the FW342 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customers products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice.
PS No.7912-6/6