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April 2008
FDD8896 / FDU8896
N-Channel PowerTrench MOSFET 30V, 94A, 5.7m
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
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Features
rDS(ON) = 5.7m , VGS = 10V, ID = 35A , VGS = 4.5V, ID = 35A rDS(ON) = 6.8m High performance trench technology for extremely low rDS(ON) Low gate charge
Applications
DC/DC converters
D G S
I-PAK (TO-251AA) G D S
G
Ratings 30 20
Units V V
Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 1.88 100 52
o o
C/W C/W
oC/W
FDD8896 / FDU8896
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TC = 150oC 30 1 250 100 V A nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 35A, VGS = 10V rDS(ON) Drain to Source On Resistance ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC 1.2 2.5 V 0.0047 0.0057 0.0057 0.0068 0.0075 0.0092
Dynamic Characteristics
CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain Miller Charge (VGS = 10V) VDD = 15V, ID = 35A VGS = 10V, RGS = 6.2 9 106 53 41 171 143 ns ns ns ns ns ns VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 35A Ig = 1.0mA 2525 490 300 2.1 46 24 2.3 6.9 4.6 9.8 60 32 3.0 pF pF pF nC nC nC nC nC nC
Switching Characteristics
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
Notes: 1: Package current limitation is 35A. 2: Starting TJ = 25C, L = 0.43mH, IAS = 28A, VDD = 27V, VGS = 10V.
FDD8896 / FDU8896
1.0
0.8
0.6
50
0.4
25
0.2
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 t, RECTANGULAR PULSE DURATION (s) 10-1 100 101
100
30 10-5 10-4 10-3 10-2 t, PULSE WIDTH (s) 10-1 100 101
FDD8896 / FDU8896
100
STARTING TJ = 25oC 10
1ms 10ms DC
1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
100
100
60 TJ = 25oC 40
20 TJ = 175oC 0 1.5 2.0 2.5 3.0 VGS , GATE TO SOURCE VOLTAGE (V) 3.5 TJ = -55oC
20 VGS = 2.5V 0 0 0.2 0.4 0.6 0.8 VDS , DRAIN TO SOURCE VOLTAGE (V)
1.4
10
1.2
1.0
ID = 1A
0.6 -80
-40
160
200
FDD8896 / FDU8896
1.0
1.1
0.8
1.0
0.6
0.4 -80
-40
40
80
120
160
200
0.9 -80
-40
40
80
120
160
200
C, CAPACITANCE (pF)
VGS = 0V, f = 1MHz 100 0.1 0 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 30
FDD8896 / FDU8896
VDS VDD L VGS VDS Qg(5) VDD DUT Ig(REF) VGS = 1V 0 Qg(TH) Qgs Ig(REF) 0 Qgd Qgs2 VGS = 5V Qg(TOT) VGS VGS = 10V
+
VDS
VGS
VDD DUT 0
10%
10%
90% 50%
FDD8896 / FDU8896
75
(EQ. 1)
50
In using surface mount devices such as the TO-252 package, the environment in which it is applied will have a significant influence on the parts current and maximum power dissipation ratings. Precise determination of PDM is complex and influenced by many factors: 1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. The number of copper layers and the thickness of the board. 3. The use of external heat sinks. 4. The use of thermal vias. 5. Air flow and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the designers preliminary application evaluation. Figure 21 defines the RJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Fairchild device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve. Thermal resistances corresponding to other copper areas can be obtained from Figure 21 or by calculation using Equation 2 or 3. Equation 2 is used for copper area defined in inches square and equation 3 is for area in centimeters square. The area, in square inches or square centimeters is the top copper area including the gate and source pads.
25 0.01 (0.0645)
0.1 (0.645)
1 (6.45)
10 (64.5)
(EQ. 2)
Area in Inches Squared
R JA = 33.32 + ---------------------------------
(EQ. 3)
Area in Centimeters Squared
FDD8896 / FDU8896
RSLC2
5 51 -
RLgate 1 9 46 RLdrain 2 5 10 RLsource 3 7 17 Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMOD Mweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 2.2e-3 Rgate 9 20 2.1 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 2e-3 Rvthres 22 8 RvthresMOD 1 Rvtemp 18 19 RvtempMOD 1 S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),10))} .MODEL DbodyMOD D (IS=5E-12 IKF=10 N=1.01 RS=2.6e-3 TRS1=8e-4 TRS2=2e-7 + CJO=8.8e-10 M=0.57 TT=1e-16 XTI=0.9) .MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6) .MODEL DplcapMOD D (CJO=9.4e-10 IS=1e-30 N=10 M=0.4) .MODEL MmedMOD NMOS (VTO=1.85 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.1 T_ABS=25) .MODEL MstroMOD NMOS (VTO=2.34 KP=350 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25) .MODEL MweakMOD NMOS (VTO=1.55 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=21 RS=0.1 T_ABS=25) .MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-4e-7) .MODEL RdrainMOD RES (TC1=1e-4 TC2=8e-6) .MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6) .MODEL RsourceMOD RES (TC1=7.5e-3 TC2=1e-6) .MODEL RvthresMOD RES (TC1=-1.7e-3 TC2=-8.8e-6) .MODEL RvtempMOD RES (TC1=-2.6e-3 TC2=2e-7) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3 VOFF=-4) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-0.5) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=-2) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
DBODY
FDD8896 / FDU8896
DRAIN 2
RLGATE
LSOURCE 7 RLSOURCE
SOURCE 3
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u, temp=m_temp m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u, temp=m_temp m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u, temp=m_temp res.rbreak n17 n18 = 1, tc1=8.3e-4,tc2=-4e-7 res.rdrain n50 n16 = 2.2e-3, tc1=1e-4,tc2=8e-6 res.rgate n9 n20 = 2.1 res.rslc1 n5 n51 = 1e-6, tc1=9e-4,tc2=1e-6 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 2e-3, tc1=7.5e-3,tc2=1e-6 res.rvthres n22 n8 = 1, tc1=-1.7e-3,tc2=-8.8e-6 res.rvtemp n18 n19 = 1, tc1=-2.6e-3,tc2=2e-7 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/500))** 10)) } }
FDD8896 / FDU8896
th
JUNCTION
RTHERM1
CTHERM1
RTHERM2
CTHERM2
RTHERM4
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
tl
CASE
FDD8896 / FDU8896
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH *
Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter *
FPS F-PFS FRFET Global Power ResourceSM Green FPS Green FPS e-Series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR
tm
PDP-SPM Power-SPM PowerTrench Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world 1mW at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SuperMOS
TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire SerDes UHC Ultra FRFET UniFET VCX VisualMax
* EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
2008 Fairchild Semiconductor Corporation FDD8896 / FDU8896 Rev. C2
Preliminary
First Production