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PG-TO247-3
CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward)
Type SPW17N80C3
Package PG-TO247-3
Marking 17N80C3
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.9 P tot T j, T stg M2.5 screws page 1 T C=25 C T C=25 C I D=3.4 A, V DD=50 V I D=17 A, V DD=50 V Value 17 11 51 670 0.5 17 50 20 30 227 -55 ... 150 50 W C Ncm 2008-10-15 A V/ns V mJ Unit A
SPW17N80C3
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 17 51 4 V/ns Unit A
Parameter
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10s 0.55 62 K/W
260
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 A V (BR)DS V GS(th) I DSS V GS=0 V, I D=17 A V DS=V GS, I D=1.0 mA V DS=800 V, V GS=0 V, T j=25 C V DS=800 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=11 A, T j=25 C V GS=10 V, I D=11 A, T j=150 C Gate resistance RG f =1 MHz, open drain 800 2.1 870 3 3.9 25 A V
150 0.25
100 0.29 nA
0.67 0.85
Rev. 2.9
page 2
2008-10-15
SPW17N80C3
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance C iss C oss V GS=0 V, V DS=100 V, f =1 MHz 2300 94 72 pF Values typ. max. Unit
Effective output capacitance, energy C o(er) related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current
1) 2) 3) 4) 5) 6)
210 25 15 72 12
ns
12 45 88 5.5
117 -
nC
V SD t rr Q rr I rrm
V GS=0 V, I F=I S=17 A, T j=25 C V R=400 V, I F=I S=17 A, di F/dt =100 A/s
1 550 15 51
1.2 -
V ns C A
J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD=ID, di/dt=200A/s, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.9
page 3
2008-10-15
SPW17N80C3
1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
240 102
limited by on-state resistance
200
10 s
1 s
160
101
100 s 1 ms
P tot [W]
120
I D [A]
DC 10 ms
80
100
40
T C [C]
V DS [V]
50
10 V 0.5
40
Z thJC [K/W]
0.2
10-1
0.1 0.05 0.02
I D [A]
30
6V
20
5.5 V
5V
10
4.5 V
0 0 5 10 15 20 25
t p [s]
V DS [V]
Rev. 2.9
page 4
2008-10-15
SPW17N80C3
5 Typ. output characteristics I D=f(V DS); T j=150 C; t p=10 s parameter: V GS
35
20 V
30
10 V
1.3
25
6V
1.2
1.1 20
5.5 V
R DS(on) [ ]
I D [A]
1
6.5 V 6V
10 V
15
5V
0.9
10
4.5 V
0.8
4 V 4.5 V 5V
5.5 V
0.7
0 0 5 10 15 20 25
0.6 0 10 20 30 40 50
V DS [V]
I D [A]
8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 s parameter: T j
0.8
60
25 C
50 0.6 40
R DS(on) [ ]
I D [A]
0.4
98 % typ
30
150 C
20
0.2 10
0 0 2 4 6 8 10
T j [C]
V GS [V]
Rev. 2.9
page 5
2008-10-15
SPW17N80C3
9 Typ. gate charge V GS=f(Q gate); I D=17 A pulsed parameter: V DD
10
8
160 V 25 C
150C (98%)
101 6
640 V 150 C
V GS [V]
4 100
I F [A]
0 0 20 40 60 80 100 10-1 0 0.5 1 1.5 2
Q gate [nC]
V SD [V]
700
960
600
920
500
880
V BR(DSS) [V]
E AS [mJ]
400
840
300
800
200
760
100
720
T j [C]
T j [C]
Rev. 2.9
page 6
2008-10-15
SPW17N80C3
13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS)
104
Ciss
18 16 14 12
103
E oss [J]
300 400 500 600 700 800
C [pF]
10 8 6
102
Coss
101
Crss
4 2
V DS [V]
V DS [V]
Rev. 2.9
page 7
2008-10-15
SPW17N80C3
Definition of diode switching characteristics
Rev. 2.9
page 8
2008-10-15
SPW17N80C3
PG-TO247-3: Outline
Dimensions in mm/inches
Rev. 2.9
page 9
2008-10-15
SPW17N80C3
Published by Infineon Technologies AG 81726 Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please
Rev. 2.9
page 10
2008-10-15
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1