2N5086/2N5087/MMBT5087

2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA.
1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 1 Mark: 2Q 1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings* Ta=25C unless otherwise noted

Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value -50 -50 -3.0 -100 -55 ~ +150 Units V V V mA C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta=25C unless otherwise noted

Symbol Parameter Test Condition IC = -1.0mA, IB = 0 IC = -100A, IE = 0 VCB = -10V, IE = 0 VCB = -35V, IE = 0 VEB = -3.0V, IC = 0 IC = -100A, VCE = -5.0V IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V VCE(sat) VBE(on) fT Ccb hfe NF Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Noise Figure IC = -10mA, IB = -1.0mA IC = -1.0mA, VCE = -5.0V IC = -500A, VCE = -5.0V, f = 20MHz VCB = -5.0V, IE = 0, f = 100KHz IC = -1.0mA, VCE = -5.0V, f = 1.0KHz IC = -100A, VCE = -5.0V RS = 3.0k, f = 1.0KHz IC = -20A, VCE = -5.0V RS = 10k f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%

Min. -50 -50

Max.

Units V V

Off Characteristics Collector-Emitter Breakdown Voltage * V(BR)CEO V(BR)CBO ICEO ICBO hFE Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain

-10 -50 -50 5086 5087 5086 5087 5086 5087 150 250 150 250 150 250 500 800

nA nA nA

On Characteristics

-0.3 -0.85 40 4.0 5086 5087 5086 5087 5086 5087 150 250 600 900 3.0 2.0 3.0 2.0

V V MHz pF

Small Signal Characteristics

dB dB dB dB

2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Thermal Characteristics Ta=25C unless otherwise noted

Max. Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5086 2N5087 625 5.0 83.3 200 357 *MMBT5087 350 2.8 Units mW mW/C C/W C/W

* Device mounted on FR-4 PCB 1.6 1.6 0.06."

2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Typical Characteristics
VCESAT - COLLECTOR EMITTER VOLTAGE (V)

h F E- TYPICAL PULSED CURRENT GAIN

0.3 0.25 0.2 0.15

350
V CB = 5V

300 250 200 150 100

125 C

= 10

25 C

25 C

0.1 0.05 0 0.1

125 C - 40 C

- 40 C

50 0.01 0.03

0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA)

100

1 10 I C - COLLECTOR CURRENT (mA)

Figure 1. Typical Pulsed Current Gain vs Collector Current

Figure 2. Collector-Emitter Saturation Voltage vs Collector Current

1 0.8
- 40 C

V BEON - BAS E EMITTER ON VOLTAGE (V)

V BESAT - BASE EMITTE R VOLTAGE (V)

0.8
- 40 C 25 C 125 C

0.6 0.4 0.2 0 0.1

25 C 125 C

0.6 0.4 0.2 0 0.1

= 10

V CE = 5V

1 10 I C - COLLECTOR CURRENT (mA)

50

1 10 I C - COLLECTOR CURRE NT (mA)

25

Figure 3. Base-Emitter Saturation Voltage vs Collector Current

Figure 4. Base-Emitter On Voltage vs Collector Current

I CBO - COLLECTOR CURRENT (nA)

100
V CB = 40V

20 f = 1 MHz CAPACITANCE (pF) 16 12 8

C ibo

10

0.1

4 0

C obo

0.01 25

50 75 100 TA - AMBIENT TEMP ERATURE ( C)

125

8 12 16 REVERSE BIAS VOLTAGE (V)

20

Figure 5. Collector Cutoff Current vs Ambient Temperature

Figure 6. Input and Output Capacitance vs Reverse Voltag

2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Typical Characteristics(Continuce)
- GAIN BANDWIDTH PRODUCT (MHz)
5

350
NF - NOISE FIGURE (dB)

V CE = 5V

300 250 200 150 100 50 0 0.1

V CE = 5V

R = 5.0 k I C = - 250 A, S I C = - 500 A, R S = 1.0 k

R I C = - 20 A, = 10 k S
1000 10000 f - FREQUENCY (Hz) 1000000

1 10 I C - COLLECTOR CURRENT (mA)

100

0 100

Figure 7. Gain Bandwidth Product vs Collector Current

Figure 8. Noise Figure vs Frequency

8 V CE = 5V
P D - POWER DISSIPATION (mW)

625
BANDWIDTH = 15.7 kHz

NF - NOISE FIGURE (dB)

TO-92
500 375 250 125 0

6
A I C = 10

SOT-23

4
I C = 100 A

1,000

2,000

5,000

10,000

R S - SOURCE RESISTANCE ) (

20,000

50,000

100,000

25

50 75 100 TEMPERATURE ( o C)

125

150

Figure 9. Wideband Noise Frequency vs Source Resistance

n - EQUIVALENT INPUT NOISE CURRENT (pA/ Hz)
- EQUIVALENT INPUT NOISE VOLTAGE ( V/ Hz)

Figure 10. Power Dissipation vs Ambient Temperature

10 5 2 1 0.5 0.2 0.1 0.001 0.01 0.1 I C - COLLECTOR CURRENT (mA) 1 V CE = - 5.0V
,f= 1 00 Hz

0.1 V CE = - 5.0V

0.05 0.02 0.01

in

z kH 1.0 z i n kH 10 ,f= i n ,f=

e n , f = 100 Hz

0.005
e n , f = 1.0 kHz e n , f = 10 kHz

0.002 0.001 0.001

2 n

0.01 0.1 I C - COLLECTOR CURRENT (mA)

Figure 11. Equivalent Input Noise Current vs Collector Current

Figure 12. Equivalent Input Noise Voltage vs Collector Current

2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Typical Characteristics
1,000,000

(Continuce)

R S - SOURCE RESISTANCE ( )

) R S - SOURCE RESISTANCE (

1,000,000

100,000

1.0 dB
10,000

10 dB 6.0 dB 4.0 dB 2.0 dB

100,000

12 dB 8.0 dB 5.0 dB 3.0 dB

5.0 dB 8.0 dB 12 dB

V CE = - 5V f = 100 Hz BANDWIDTH = 15 Hz

4.0 dB 6.0 dB 10 dB
V CE = - 5V f = 10 kHz BANDWIDTH = 1.5 kHz

10,000 1,000 100

1,000

100

0.001

0.01 0.1 I C - COLLECTOR CURRENT (mA)

0.001

0.01 0.1 I C - COLLECTOR CURRENT (mA)

Figure 13. Contours of Constanct Narrow Band Noise Figure

Figure 14. Contours of Constanct Narrow Band Noise Figure

R S - SOURCE RESISTANCE ( )

10
6.0

dB

100,000

dB 4.0 dB

V CE = - 5V f = 1.0 kHz BANDWIDTH = 150 Hz

) R S - SOURCE RESISTANCE (

1,000,000

10,000

0 6. dB
0 4.

5,000

dB

0 2. dB

2,000 1,000 500

4. 0
6.0 dB

10,000

4.0

dB

dB
6.0 dB dB

1,000

10

V CE = - 5V f = 10 MHz 200 BANDWIDTH = - 2 kHz

100

100

0.001

0.01 0.1 I C - COLLECTOR CURRENT (mA)

0.01

0.1 1 I C - COLLECTOR CURRENT (mA)

10

Figure 15. BContours of Constant Narrow Band Noise Figure

Figure 16. Contours of Constant Narrow Band Noisd Figure

2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Typical Common Emitter Characteristics

HARACTERIS TICS REL. TO VALUE, VCE=-5.0V
HARACTERISTICS REL. TO VALUE , I C =1.0mA

(f = 1.0KHz)

1.6 1.4 1.2 1 h oe 0.8 f = 1.0 kHz 0.6 I C = 1.0 mA TA = -25C 0.4 0 -5 -10 -15 -20 V CE- COLLECTOR-EMITTE R VOLTAGE (V) -25 h fe and h ie

100 h oe 10 h fe 1

0.1

f = 1.0 kHz VCE = -5.0V TA = -25C

h ie

0.01 0.1

0.2 0.5 1 2 5 I C - COLLECTOR CURRE NT (mA)

10

Typical Common Emitter Characteristics

Typical Common Emitter Characteristics

CHARACTERIS TICS REL. TO VALUE, TA= 25C

2 1.8 1.6 1.4 1.2 1 0.8 0.6

VCE = -5.0V I C = 1.0 mA f = 1.0 kHz

h ie

h fe h fe and h oe

h oe

h ie -40 -20 0 20 40 60 80 T A - AMBIE NT TEMP ERATURE ( C) 100

0.4 -60

Typical Common Emitter Characteristics

2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Package Dimensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Package Dimensions (Continued)

SOT-23
0.20 MIN 2.40
0.10

0.40 0.03

1.30

0.10

0.45~0.60

0.03~0.10 0.38 REF

0.40 0.03 0.96~1.14 2.90 0.10

0.12 0.023

+0.05

0.95 0.03 0.95 0.03 1.90 0.03 0.508REF

0.97REF

Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation Rev. B1, September 2003

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2003 Fairchild Semiconductor Corporation

Rev. I5