SS9014

SS9014
Pre-Amplifier, Low Level & Low Noise
High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 50 45 5 100 450 150 -55 ~ 150 Units V V V mA mW C C

Electrical Characteristics Ta=25C unless otherwise noted

Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) VBE (on) Cob fT NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure Test Condition IC =100A, IE =0 IC =1mA, IB =0 IE =100A, IC =0 VCB =50V, IE =0 VEB =5V, IC =0 VCE =5V, IC =1mA IC =100mA, IB =5mA IC =100mA, IB =5mA VCE =5V, IC =2mA VCB =10V, IE =0 f=1MHz VCE =5V, IC =10mA VCE =5V, IC =0.2mA f=1KHz, RS=2K 150 0.58 60 280 0.14 0.84 0.63 2.2 270 0.9 10 Min. 50 45 5 50 50 1000 0.3 1.0 0.7 3.5 V V pF MHz dB Typ. Max. Units V V V nA nA

hFE Classification
Classification hFE A 60 ~ 150 B 100 ~ 300 C 200 ~ 600 D 400 ~ 1000

2002 Fairchild Semiconductor Corporation

Rev. A4, November 2002

SS9014

Typical Characteristics
100 90

1000

IC [mA], COLLECTOR CURRENT

80 70 60 50 40 30 20 10 0 0

IB = 100A IB = 80A IB = 60A IB = 40A IB = 20A

hFE, DC CURRENT GAIN

IB = 160A IB = 140A IB = 120A

VCE = 5V

100

10

10

20

30

40

50

10

100

1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

IC [mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE

1000

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

1000

VBE (sat)

VCE = 5V

100

100

VCE (sat)

IC = 20 IB
10 1 10 100 1000

10 1 10 100 1000

IC [mA], COLLECTOR CURRENT

IC [mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Current Gain Bandwidth Product

2002 Fairchild Semiconductor Corporation

Rev. A4, November 2002

SS9014

Package Dimensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A4, November 2002

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2002 Fairchild Semiconductor Corporation

Rev. I1