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KSD5072
High Collector-Base Voltage (VCBO=1500V) High Switching Speed (tF. max=0.4s)

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

COLOR TV HORIZONTAL OUTPUT APPLICATION (DAMPER DIODE BUILT IN)

TO-3PF

ABSOLUTE MIXIMUM RATING


Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Peak)

Symbol

Rating 1500 800 6 5 16 60 150 -55 ~ 150

Unit V V V A A W

Collector Dissipation (TC=250C) Junction Temperature Storage Temperature

ELECTRICAL CHARACTERISTICS (TC=25C)


Characteristic Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Current Gain Bandwidth Product Damper Diode Turn On Voltage Fall Time ICBO IEBO hFE VCE(sat) VBE(sat) fT VF tF

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C C 1.Base 2.Collector 3.Emitter Test Condition Min 40 8 Typ Max 10 200 5 1.5 2 0.4 Unit VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 1A IF = 5A IC = 4A, IB1 = 0.8A IB2 = - 1.6A, VCC = 200V RL = 50 3 3 A mA V V MHz V s Rev B.

VCBO VCEO VEBO IC IC PC TJ T STG

1999 Fairchild Semiconductor Corporation

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KSD5072

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

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KSD5072

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

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DISCLAIMER

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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