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Transistor can be grouped into two families:

1. Bipolar Junction Transistor (BJT) 2. Unipolar Junction Transistor (UJT)

The First BJT

Transistor Size (3/8L X 5/32W X 7/32H) No Date Codes. No Packaging.

Modern Transistors

Example of BJT Specification Sheet

Fig. 3.32 Type Q2T2905 Texas Instruments quad pnp silicon transistor: (a) appearance; (b) pin connections. (Courtesy Texas Instruments Incorporated.)

Robert L. Boylestad Electronic Devices and Circuit Theory, 9e

Copyright 2006 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 All rights reserved.

Transistor Terminal Identification

Definition
A three terminal device in which current flowing between two terminals can be controlled by a signal on the third terminal. There are two types of transistors:
pnp npn

Symbol & Construction

Transistor Operation
Forward bias, base to emitter narrows the BE depletion region.

Transistor Operation

Reverse bias, base to collector widen the BC depletion region.

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Forward and Reverse bias of a BJT.

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Transistor currents.

Thomas L. Floyd Electronic Devices, 6e and Electronic Devices: Electron Flow Version, 4e

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Copyright 2002 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 All rights reserved.

Currents in a Transistor
By Kirchhoffs current law; ( 4.1)

I E IC I B
dc

The current gain of the transistor;

IC IB

( 4.2)

The ratio of the collector current to the emitter current;

dc

IC IE

( 4.3)

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Currents in a Transistor
Relationship of dc and

dc
(4.4)

I E IC I B
Dividing the Eq 4.1 by IC; Eq.4.4

Substitute Eq.4.2 and Eq.4.3 into

IE IC I B IC IC IC

dc

dc

Rearrange the above expression;

dc

dc 1 dc

and

dc

dc 1 dc
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General Bias Modes

Forward active mode VBE > 0v ( BE at FB) ; VBC < 0v ( BC at RB)

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General Bias Modes

Reverse active mode VBE < 0v ( BE at RB ) ; VBC > 0v ( BC at FB )

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General Bias Modes

Saturation mode VBE > 0v ( BE at FB ) ; VBC > 0v ( BC at FB

Thomas L. Floyd Electronic Devices, 6e and Electronic Devices: Electron Flow Version, 4e

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Copyright 2002 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 All rights reserved.

General Bias Modes

Cut off mode VBE < 0v ( BE at RB ) ; VBC < 0v ( BC at RB )

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Operation Mode

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Operation Mode
Active:
Most importance mode, e.g. for amplifier operation. The region where current curves are practically flat.

Saturation:
Barrier potential of the junctions cancel each other out causing a virtual short. Ideal transistor behaves like a closed switch.

Cutoff:
Current reduced to zero Ideal transistor behaves like an open switch.
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Operation Mode

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Transistor currents and voltages.

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DC load line on a family of collector characteristic curves illustrating the cutoff and saturation conditions.

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TRANSISTOR CONFIGURATION CIRCUIT.


Common Emitter Configuration Common Base Configuration Common Collector Configuration
The way a transistor is connected with the specific terminal become common terminal for both input and output loops.

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Circuit Configuration

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Common Emitter Configuration

The Emitter is common to both input (base-emitter) and output (collector-emitter). The input is on the Base and the output is on the Collector.
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Common-Emitter Configuration
It is called common-emitter configuration since : - emitter is common or reference to both input and output terminals. - emitter is usually the terminal closest to or at ground potential. Almost amplifier design is using connection of CE due to the high gain for current and voltage. Two set of characteristics are necessary to describe the behavior for CE ;input (base terminal) and output (collector terminal) parameters.

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Common-Emitter Configuration

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Characteristics of Common-Emitter
IB is microamperes compared to miliamperes of IC. IB will flow when VBE > 0.7V for silicon and 0.3V for germanium Before this value IB is very small and no IB. Base-emitter junction is forward bias Increasing VCE will reduce IB for different values.
Collector characteristics = output characteristics. Base characteristics = input characteristics.
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Characteristics of Common-Emitter
Collector characteristics = output characteristics. Base characteristics = input characteristics.

VCE < VCESAT, IC increase linearly with increasing of VCE VCE > VCESAT, IC not totally depends on VCE constant IC IB(uA) is very small compare to IC (mA). Small increase in IB cause big increase in IC IB=0 A ICEO occur. Noticing the value when IC=0A. There is still some value of current 30 flows.

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Beta ()

In DC mode:

IC dc IB
IC ac IB VCE constant

[Formula 3.10]

In AC mode:

[Formula 3.11]

indicates the amplification factor of a transistor. ( is sometimes referred to as hfe, a term used in transistor modeling calculations)

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Example
From output characteristics of common emitter configuration, find ac and dc with an Operating point at IB=25 A and VCE =7.5V.

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Solution:

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Determining ac and dc from the collector characteristics.

Robert L. Boylestad Electronic Devices and Circuit Theory, 9e

Copyright 2006 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 All rights reserved.

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Common Base Configuration


The base is common to both input (emitter base) and output (collector base) of the transistor.

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Common-Base Configuration
Common-base terminology is derived from the fact that the :

- base is common to both input and output of the


configuration. - base is usually the terminal closest to or at ground potential. All current directions will refer to conventional (hole) flow and the arrows in all electronic symbols have a direction defined by this convention.

Note that the applied biasing (voltage sources) are such


as to establish current in the direction indicated for each branch.
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Common-Base Configuration

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Input Characteristics for a Common-Base Amplifier


Ic(mA)

This demonstrates the input current IE to input voltage VBE for various levels of output voltage VCB.

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Alpha ()
In the dc mode the level of IC and IE due to the majority carriers are related by a quantity called alpha IC =

IE

IC = IE + ICBO It can then be summarize to IC = IE (ignore ICBO due to small value) For ac situations where the point of operation moves on the characteristics curve, an ac alpha defined by

IC
IE
Alpha a common base current gain factor that shows the efficiency by calculating the current percent from current flow from emitter to collector.The value of is typical from 0.9 ~ 0.998.

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Biasing
Proper biasing CB configuration in active region by approximation IC IE (IB 0 uA)

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Transistor as an amplifier

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Simulation of transistor as an amplifier

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Common Collector Configuration

The input on the Base and the output is on the Emitter.


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Common Collector Configuration


Also called emitter-follower (EF). It is called common-emitter configuration since both the signal source and the load share the collector terminal as a common connection point. The output voltage is obtained at emitter terminal. The input characteristic of common-collector configuration is similar with common-emitter. configuration. Common-collector circuit configuration is provided with the load resistor connected from emitter to ground. It is used primarily for impedance-matching purpose since it has high input impedance and low output impedance.
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Common Collector Configuration

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Limits of Operation
Many BJT transistor used as an amplifier. Thus it is important to notice the limits of operations. At least 3 maximum values is mentioned in data sheet.

There are:
a) Maximum power dissipation at collector: PCmax or PD b) Maximum collector-emitter voltage: VCEmax sometimes named as VBR(CEO) or VCEO. c) Maximum collector current: ICmax There are few rules that need to be followed for BJT transistor used as an amplifier. The rules are: i) transistor need to be operate in active region! ii) IC < ICmax ii) PC < PCmax
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Limitations of Operation for Each Configuration

Note:

VCE is at maximum and IC is at minimum (ICmax=ICEO) in the cutoff region. IC is at maximum and VCE is at minimum (VCE max = VCEsat = VCEO) in the saturation region. The transistor operates in the active region between saturation and cutoff.

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Power of Dissipation
Common Base:

PCmax VCBIC
PCmax VCEIC PCmax VCEIE

[Formula 3.18]

Common Emitter:

[Formula 3.16]

Common Collector: a

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Refer to the fig. Step1: The maximum collector power dissipation, PD=ICmax x VCEmax (1) = 18m x 20 = 360 mW Step 2: At any point on the characteristics the product of and must be equal to 360 mW. Ex. 1. If choose ICmax= 5 mA, subtitute into the (1), we get VCEmaxICmax= 360 mW VCEmax(5 m)=360/5=7.2 V
Ex.2. If choose VCEmax=18 V, subtitute into (1), we get VCEmaxICmax= 360 mW (10) ICmax=360m/18=20 mA
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Derating PDmax
PDmax is usually specified at 25C.

The higher temperature goes, the less is PDmax


Example; A derating factor of 2mW/C indicates the power

dissipation is reduced 2mW each degree centigrade


increase of temperature.

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Example
Transistor 2N3904 used in the circuit with VCE=20 V. This circuit used at temperature 1250C. Calculate the new maximum IC. Transistor 2N3904 have maximum power dissipation is 625 mW. Derating factor is 5mW/0C.

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Solution
Step 1: Temperature increase : 1250C 250C = 1000C Step 2: Derate transistor : 5 mW/0C x 1000C = 500 mW Step 3: Maximum power dissipation at 1250C = 625 mW500 mW=125 mW. Step 4: Thus ICmax = PCmax / VCE=125m/20 = 6.25 mA. Step 5:

Draw the new line of power dissipation at 1250C .

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Example
The parameters of transistor 2N3055 as follows:

- Maximum power dissipation @ 250C=115 W


- Derate factor=0.66 mW/0C. This transistor used at temperature 780C.

Find the new maximum value of power dissipation.


Find the set of new maximum of IC if VCE=10V, 20V and 40 V.

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Solution
Step 1: Temperature increase : 780C 250C = 530C Step 2: Derate transistor : 0.66mW/0C x 530C = 35 mW Step 3:

Maximum power dissipation at 780C = 115W 35W=80 mW.


Step 4: ICmax = PCmax / VCE=80m/10 = 8 mA (point C)

ICmax = PCmax / VCE=80m/20 = 4 mA. (point B)


ICmax = PCmax / VCE=80m/40 = 2 mA (point A)
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Step 5:

Draw the new line of power dissipation at 780C .

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Transistor Testing
1. Curve Tracer Provides a graph of the characteristic curves. 2. DMM Some DMMs will measure DC or HFE. 3. Ohmmeter

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Partial transistor data sheet.

Thomas L. Floyd Electronic Devices, 6e and Electronic Devices: Electron Flow Version, 4e

59
Copyright 2002 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 All rights reserved.

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