Surface Engineering PJM1

Surface Engineering Leibniz-Institute for Surface Modification - IOM -
with Ion Beams and Plasma Jets

Chemical Department Field of work:
Non–Thermal Modification of Surfaces and Thin Films and
Thin Film Deposition
With the help of
Electron-, Ion-, Plasma- and UV-Photon-Beams
Staff:48 permanent
~ 50 %
~ 90 in projects (2..3 y.) Scientists
~ 140 employees in total
Plasma Source Annual budget:

~ 6 Mio. € Basic Financing
+ ~ 3...5 Mio. € Projects + Orders
~ 9...11 Mio. €in total
Optic
ße 1 5
Permoserstra Board of Directors:
04303 Leipzig; Germany
Prof. Dr. B. Rauschenbach
Tel:+49 341 235 2308 NN
Axel Schindler and Thomas Arnold Fax:+49 341 235 2313
e-mail: bernd.rauschenbach@iom-
Leibniz Institute of Surface Modification, Leipzig, Germany www.iom-leipzig.de Physical Department leipzig.deInternet: -
http://www.iomleipzig.de
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Outline
bersicht E x p e r t i s e o f
i
I O M i i n l - i
ultra-precision surface processing
...applied to optics
IOM‘s R&D activities in

News on Ion Beam Figuring IBF - Ion Beam and Plasma Jet Surface Processing 
more than 35 years experience in (R)IBE - PT

Other ion beam surface processing techniques

since 1986 in IBF for optics fabrication OpticIon Source
Atmospheric Plasma Jet Machining PJM -

 Since 1993 in PACE and PJM for optics fabrication
PlasmaSource
> Ion Beam Figuring > Ion Beam
Assisted Deposition
IonBeam
>
Planarization > Low Energy

Ion Implantation
> Ion Beam Smoothing Optic
> Ion Beam Patterning > Plasma Jet CNC

machining – etching and
> Ion Beam Proportional deposition
Transfer
Expertise of IOM in ultra-

precision surface processing Effective wavelength range
> Basic Research and Development of: - Spatial wavelength size of surface features [m]
Processing
10-110-210-310-410-510-610-710-8
- Software
- Components Ion beam
Ion beam and Plasma jet ?
nano structuring/
- Systems deterministic figuring smoothing
Surface topology Mid Spatial Frequency Roughness - MSFR High Spatial FrequencyRoughness HSFR
References: µm
100mm 160µm 1µm
Optical / tactile profiler White light and AFM

Interferometry Micro-interferometer SEM
... and others
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5 für Oberflächenmodifizierung Paris, France 25th - 26th November 2010 6
Space Optics ion beam finished by IOM Ion beam-figuring of synchrotron-optics
SOFIA Secondary mirror IBF in IOM 2001: 352 mm SiC, 39 nm rms 110
100 Plano-Elliptical Focusing Mirror
90
250
80
70 Ausgangsfläche
60 > 40 mm Kaufman-Source 1.Bearbeitung
50 200
40 > Hot Filament-Neutralisation 3.Bearbeitung
30
800 V / 20mA 2.Bearbeitung
Profilhohe mnrn/
>
20
10 150
100
50
0 50 100 150 200
mm
SR Spot size
(FWHM) Surface status
RMS PV RMS PV FWHM
(arcsec] (arcsec] (nm] (nm] (mm]
42µm 17µm
initial state 1.49 5.02 47.3 191.1
1 st run 0.44 2.43 13.3 58.1 4

2 nd run
0.26 1.51 2.9 14.3 4
SR beam spots
3 rd run (final 0.138
state) 0138 0.85 1.4 8.8 2
and horizontal
Intensity profiles
1,49 arcsec
before
Synchrotron beam line grating –

New ideas for improving ion beam figuring performances
by large area uniform dwell time etching
Disadvantages of standard dwell time ion beam figuring using
Pitch = p cw ion beam:
p Duty cycle = t/p
t Etching depth = h 1. Fixed beam size constrains effective
h
figuring to spatial wavelength equal or
larger then about the beam size,
1. CW ion beam current regime together
Si-subsrate
Si- 190mm with the maximum motion velocity
substrate
and upper limits of the dynamics
(accell. + decell.) of the mechanical
motion system cause inefficiency with
respect to local depth resolution (steep
X-ray grating specification surface gradients) and the waste material
removal at the “zero surface error”
Parameter type 1 type 5
Substrate size 90mm x 30mm - 40mm thick 200mm x 30mm - 30mm thick
Line Density 700 l/mm 700 l/mm 1400 mm-1 1400 mm-1 position,
track 1 track 2 track 1 track 2
Energy range 10 - 20 eV 15 - 25 eV 150-400 eV 600-1600 eV 1. Only sequential processing of surfaces
Groove depth ±10% 900 A 800 A 130 to 140 A 55 to 60 A by raster scan and no parallel processing.
Duty cycle (groove/period) 0.55 0.55 0.55 to 0.6 0.55
Useful area 80 x 10mm2 80 x 10mm2 110 × 10 mm2 190 × 10 mm2
New!
Ion source technology = key for UPSP IBF using motion synchronized PWM ion beam control
Base source: 40 mm RF Source, Hidden Hot Filament Neutralisation
100mm Parameter
Beam switching-Parameters:
DtCalc
f = 10 kHz;
Initial and Final tpuls = 2 ... 98 µs
Surface Data tmech , tpwm
-* PWM = 2 ... 98%
Beam Profile Data
CNanotec
Beam switching unit

CAM-Table Beam on /off
Ø2mm Ø1mm Ø0.5mm

Ubeam
PWM (EIA485) Uacc
Working distance [mm]: 55 15 10 6 Ion source
3-(5-)Axes-
PC I/O: Firewire Motion Control

Removal spot Axes- 3-(5-)Axes-
controller, Motion System
FWHM [mm]: 8 2.1 1.10.6 -amplifier
(Aerotech)
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Paris, France 25th - 26th November 2010
Improved ion beam figuring using PWM of a RF-ion source New! Segmented grid linear ion source with PWL controlled ion beam
Results: Parameters of axis-system:

Max. axis velocity vmax : 40 mm/sMin.
Prin ciple
vmaxv* max = >90•vmax
 Base removal dwell time: 1,27
At = 100µs = const.
5 nm
dwell time tmin : 2 ms
Range for PWM = 2...98 %
I = const I = f(TV) Max. acceleration
time foramax : 0.5 m/s
2
 Base removal dwell time+PWM: 0,02 5acceleration

nm ta: 2 ms
Assumed
 IEIR-19Dcessing time-dwell timPtiM:= 10% 50% 90% 3:46 h

Ar ion beam:
 Processing time dwell time+PWM: 2:25 Removal rate r: 2 nm/s
IBF-Simulation for dwell time [nm][nm]
scanning + synchronized PWM h
FWHM:1.5 mm
Initial After IBF Volume removal rate: 3,06*10-4mm3/min
Standard IBF + PWM
4 Reduction of the Base removal to 2 %

4 Reduction of the Processing time to 64% Standard IBF
V: motion synchronized, PiAlivisbeam control enables:

 minimal material removal
5
[ms]
[ms]
 in certain cases strong reduction of the processing time

 low acceleration /deceleration of the axes system PWM = 0.02 ... 0.98 %
 precision figuring of partial areas of the surface tpulse = 0.05 ... 0.2 ms
Effective dwell time distribution f = 0.5 ... 20 kHz
Local distribution of the “PWM- dwell times”Local distribution of the “mechanical dwell times”
Scholze et al. Rev.Sci.Instrum. 77, 03C107 (2006)
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Ion beam profile shaping of a linear ion source by PWM Efficient IBF of systematic surface shape distortions
2,8
800
2,6 mean edge cross section
Simulation study
optimized gassian ion beam profile
2,4 edge error profile parallel to the edge
600 residual error of the edge cross section 4500
2500
2,2
[nm]
1/mA
mA/cm2
2,0 4000 4500

400 2000
4000
'Beam 1,8
3500
'Acc 1500
profileheight[nm]
3500
profileheight [nm]
200
j 1,6 3000
1000 2500
1,4
0
3000
2000
400 600 800 1000 1200 1400 1600
500 1500
Modular2.45Ghzdrivenion source withsegmentedgrid UBeam / V
2500 A 1000
system for ion beam PWM control of each single grid
Total ion current 'Beam, ion current density at the maximum of the beam crosssection j
segment. 0 500
and the ion current measured on the accelerator grid 'Acc in dependence of the
beam votage UBeam of the linear ion source. 2000 0
0 5 10 15 20 -60 -40 -20B 0 20 40 60
Y [mm] (distance from the edge of the lens) X [mm] (parallel to the edge)
1.00 1.2 0.60
Part of the systematic edge figure error
[mA/cm2]
0.75 0.9 0.45 Optimized parameter of linear ion beam source

(e.g. length ≈ 1m):
Ion current
0.50 0.6 0.30 Ion source position: parallel to the edge of an optic with
systematic edge contour error - In situ PWM ion beam shaping of a linear
0.25 0.3 0.15 segmented grid ion source enables:
density
Systematic edge error = 3.6 µm PV

0.000 200 400 600 0.00200 400 600 0.000 2 0 0 4 0 0 6 0 0
Ion beam FWHM = 9.9 -11.9 mm - efficient surface figuring of large optics esp. for
Length[mm]
Length [mm]
Length [mm] systematic surface errors
Removal rate at ≈ 1 mAcm-2 = 1 nm/s (=3.6 µm/h)
Different beam profiles along the segmented ion source axis by PWM of every segment measure by a Faraday-cup line array Resulting etching time ≈ 1h - after continuing development probably efficient
with 30 cups, distance 200 mm. figuring arbitary shaped surfaces
Residual error (rms) = 250 nm
Ion beam smoothing of ion beam etched Zerodur Ion beam smoothing of a SiC surface
Multi step process with Si coating step (patented by Schott) Ion beam direct smoothing - IBS Ion beam planarization - IBP
10 nm
(a): Rq = 2.15 nm (b): Rq = 0.81 nm 8 nm (a): Rq = 4.16 nm (b): Rq = 0.88 nm
105
Zerodur surface after IBF
3 nm coated with Si thin film
Rq = 0.142 ± 0.007 nm 104
after smoothing
0 nm
powerspectral density PSD[nli
0 nm
103
0 nm 750 nm 750 nm
2000 nm 2000 nm
102 106
(c): Rq = 0.54 nm (d)
105
1st step: photo resist layer 50–80nm spray coating
101 104
2nd step Ark, 700eV, 200mAcm-2, iia 30°
PSD[nm4]
103
100 102
101
SiC as polished
10-1 IBS step#1 100
IBS step#2
750 nm
250 nm 10-310-210-1
10-1
10-410-310-210-1 spatial frequency f [nm-1]
Ark, Eion =800eV, jion =250 mAcm–2, simultaneous sample rotation, a) before
-1]
spatial frequency f [nm IBS, b) 1st step iia 70°, c) 2nd step iia 0°

Leibniz-Institut Manufacturing Technologies to Support Large Science Projects für Oberflächenmodifizierung Paris, France 25th - 26th November 2010
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Nano optics made by nature... and ... by ion beam Self-assembling nanostructures by ion beam bombardment
InP-surface structure after ion beam bombardment
Eion = 2000 eV, Xe+ Si
500 nm
500 m
Facet eye of a moth
10 m
500 nm
Facets
 ion = 25°  ion = 26°
Ion beam direction

1 m
Structured facet surface F. Frost, ... Appl. Phys. Lett. 92, 063102 (2008); Appl. Phys. Lett. 88, 173115 (2006)
Anti reflecting surface by self assembling nano-structures

Precision Atmospheric Plasma Jet Machining (PJM)
z=100nm
Ar+-Ion Beam
(500 eV)
IBE-nano structures
on GaSb surface,
Au-coated GaSb
1000nm 125nm
100
GaSb IBE nano structured + Au

80 GaSb polished + Au
Reflectivity [%]
60
polished nano-structured
40
20
~ 5 cm 200 300 400 500 600 700 800 900 1000
Wavelength [nm]
Reflectivity Measurement: Dr. M. Schubert, Uni Leipzig
Introduction - Plasma Jet Machining (PJM) Plasma Jet Machining (PJM) - Principle
Central gas inlet
PJM – a fast and highly efficient technology for surface figuring (e.g. Ar + CF4 )
Plasma jet source
(100-1000 faster than ion beam figuring) Shieldgas (e.g. N2 )
Grounded shield
 Reactive plasma jet etching / deposition / surface modification HF
 Deep asphere fabrication, figure error correction Pipe electrode
Plasma jet
 Process in ambient air, normal pressure
Extended shield
 No mechanical forces applied to surface Lens
 Sub-surface damage free Plasma jet

(ions + electrons + neutrals)
 Capability of sub-surface damage removal

F Radical jet
(e.g. Atomic fluorine F)  Chemical material removal
 Gaussian jet tool function
Substrate
 Process in normal environment (air)
 No vacuum
-Chemical reaction on
surface:  Materials: silicon, fused silica, SiC,
ULE, (Zerodur)
Si + 4F SiF 4   
Lithography Telescopes Space Optics Synchrotron Radiation G. Boehm, W. Frank, A. Schindler, et al. , Plasma jet chemical etching - a tool for the figuring of optical precision aspheres, Precision
Science and Technology for Perfect Surfaces, eds. Y.Furukawa, Y. Mori & T. Kataoka , The Japan Society for Precision Engineering, Tokyo
(1999) 231-236 (Proc. of the 9th ICPE, Osaka/Japan, 29.08.-01.09.1999)
2.45 GHz Plasma jet sources of IOM Range of applications for PJM
High-power source Compact source Mini source Volume removal PJM Tool Removal rate
rate (mm3/h) Materials Application
Excitation Tool width
3x103 “Wild” and large size

asphere and free
High Power 1 – 10 µm/s Fused Silica form fabrication
ULETM
Microwave 4 – 10 mm Silicon Damage layer
removal
“Mild ” and medium

size asphere and free
Medium Power Fused Silica
0.1 2 µm/s form fabrication
with aperture
–
ULETM
Figure error
Microwave 1 - 4 mm Silicon
correction
Mass ca. [kg]: 15 2 0.1
Power max [W] : <600 150 60 Low Power Fused Silica
Jet FWHM [mm]: 2 - 12 0.2 - 2 0.2 - 1 ULETM
Microwave or Small size asphere
3 – 300 nm/s Silicon and free form
Etching rate max. [µms-1]: 10 * 1 0.1 RF
Silicon Carbide fabrication
Volume removal rate 0.3 – 1.5 mm
[mm3min-1]: 30 * 1 0.1 3x10-3 some Metals
(e.g. Tungsten)
MSFR reduction
* for fused silica
PJM - Technological conditions PJM - fine tool machining

Surface roughening Auxiliary processes  Etched sine test structures on SiO2-on-Si-Wafer: optical thin film measurement
 0.41 mm Gaussian FWHM beam
Expl. groove profile on quartz glass
High rate machining 0 0
0 -
0 Fine machining -2 - -2 -
4 - 4 -6 5 -10
very well „normally“ 6 - -8 -
Depth [nm]
Depth[nm]
-15 -
Depth [nm]
polished polished 8 - 10 -
10 - 12 - 20 -
CCP constant
12 - 14 -
removal 14 - 16 -
25 -
PM
-20 16 - 30
18
18
0 10 20 30 0 10 20 30 20 40 60 80 100 120
X [mm] X [mm]
X[mm]
-40
4 4 4
0369 2 2 2
Depth[nm]
mm
Depth[nm]
Depth[nm]
 High rate machining requires 0

Λ=2.0 mm 0
Λ=1.0 mm 0
Λ=0.5 mm
well polished and clean -2 -2 -2
starting surfaces
-4 -4 -4
 Sub-surface damages from Form measurement e.g. by interferometry or

0 2 4 6 8 10 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
X [mm] X [mm] X [mm]

mechanical pre-machining (grinding) profilometry
can lead to increased roughness PV = 7.8 nm PV = 7.9 nm PV = 6.7 nm
Leibniz-Institut Leibniz-Institut Manufacturing Technologies to Support Large Science Projects

Manufacturing Technologies to Support Large Science Projects
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Silicon Carbide Machining for “GAIA” BAM PJM - Results – Silicon Carbide Machining
Correction of 3 strongly curved small  Combined PJM / CCP
off axis parabolas made of sintered SiC  PJM: form error correction
 CCP: shape maintaining polishing for
roughness reduction
Setup for Plasma Jet

10mm Machining PV 5321 nm (RMS 1030 nm) PV 27.6 nm (RMS 4.3 nm)
(active area
10 mm) 1.0 mm Tool
10 mm
(10 PJM cycles)

Single mirror
10mm
3in1 setup for 3
offaxis- mirrors
Initial surface error after grinding/polishing PJM improved surface
PJM - high rate removal on workpiece edges PJM - high rate removal on workpiece edges
Results
Simulation study 2.5
Problem: reduced removal on workpiece edges at mechanical sub-aperture techniques

2
2.5
Velocity [mm/s] Groove position [mm]
edge profile
Typical edge cross section 1.5 6.5049 -1.000
2
]
9.2770 0.9020
m
1 grooves
p
7.9587 2.6521
1.5
[
Height [pm]
8.8137 4.9964
h t
0.5
1 12.1257 7.4343
g
19.3919 9.9505
i
0
0 2 4 6 8 10 12 14 16
e
0.5 X [mm]
Assumed material: fused silica
H
.03
-
0
0 2 4 6 8 10 12 14 16
Plasma jet edge machining Theoretical residual error
.02
-
X[mm]
- Volume removal rate: 2.5 mm3/min
_
.01
Residual error [pm]

0
 Sim strategy: Approximation of edge cross section profile by discrete Gaussian grooves - Effective correction rate: 1.6 mm/s
I -
0
 Parameters: Horizontal position of groove, scan velocity - Plasma jet machining is a potential technology
.01
-0
for effective treatment of edges
 Constraints: Velocity (temperature) dependent FWHM and removal rate -0.02
RMS: 0.009 µm
-0.03
0 2 4 6 8 10 12 14 16
X [mm]
Nanometer PJM shape correction with sub-mm spatial resolution Summary - PJM
Fused Silica Concave Asphere, 134 mm 
Processing Parameter:  PJM is very efficient for deterministic surface shaping with nanometric
 Plasmajet Gaussian fit FWHM 0.67 mm
 Removal Rate 0.0014 mm3/min accuracy and high spatial resolution
 Pixel size 146 µm
 Average Scan Velocity 6 mm/s  PJM works at atmospheric pressure
 Overall Machining time 4h 10 min
 Base Removal 8.1 nm 5-Axes-CNC-Plasma-Jet-Figuring  PJM requires less polishing afterwards because no SSD occur
35 nm 35 nm  PJM covers a wide range of applications like

- Fabrication of aspheres and free forms with lateral dimensions from 5 to 500 mm and machining
depths up to some millimeters
- Reduction of figure and/or mid spatial errors (> 0.5 mm) -
Damage layer removal and surface preparation
0 nm 0 nm  PJM works currently on Fused Silica, ULE, Silicon, Silicon Carbide, and Zerodur
Before PJM After PJM Correction
RMS 2.81 nm, PV 32.77 nm RMS 1.20 nm, PV 17.71 nm
Acknowledgements Thank You !

T. Hänsel, A. Nickel, F. Frost, R. Fechner, G. Böhm, H. Paetzelt, F. Pietag, D. Flamm, D. Hirsch, H. Neumann, I. Herold, H.
Beck, P. Hertel, G. Gleisberg, E. Salamatin, K. Ohndorf, A. Mill, T. Freyer, H. Bucsi, S. Daum, P. Seidel, M. Eichentopf, Major Equipment for Ion Beam Figuring and Plasma Jet Machining at IOM
H. Neumann, F. Scholze, S. Mießler, J. Meister
Thanks for Collaboration
IBF and PJM device and equipment

development and manufacturing
ISARA400Tactile CMM
5-Axes Ion Beam available 2011
Financial support by: Figuring Machine Aspheric Stitching
Young Researchers Group: Interferometer (ASI®)
Project-No.:
“Ultra precision manufacturing using
13N16011 and 13 N 7016/0 and
atomic particle beams”
+ Project-No.: 5950/914
contracts FOR 365/1-1/2; SCHI 434/11-1

5-Axes 1-Axis 60 cm Linear Variable Beam
is gratefully acknowledged. AtmosphericPJM Ion Source Machine Diameter RF Ion source
Figuring Machine
für Oberflächenmodifizierung Paris, France 25th - 26th November 2010 35 36
für Oberflächenmodifizierung Paris, France 25th - 26th November 2010

Surface Engineering PJM1

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Surface Engineering Leibniz-Institute for Surface Modification - IOM -

with Ion Beams and Plasma Jets

Plasma Source Annual budget:

ultra-precision surface processing

IOM‘s R&D activities in

more than 35 years experience in (R)IBE - PT

since 1986 in IBF for optics fabrication OpticIon Source

Atmospheric Plasma Jet Machining PJM -

Planarization > Low Energy

> Ion Beam Patterning > Plasma Jet CNC

Expertise of IOM in ultra-

100mm 160µm 1µm

Optical / tactile profiler White light and AFM

Leibniz-Institut Manufacturing Technologies to Support Large Science Projects

0 50 100 150 200

1 st run 0.44 2.43 13.3 58.1 4

Synchrotron beam line grating –

Beam switching unit

Ø2mm Ø1mm Ø0.5mm

PC I/O: Firewire Motion Control

Results: Parameters of axis-system:

 Base removal dwell time+PWM: 0,02 5acceleration

 IEIR-19Dcessing time-dwell timPtiM:= 10% 50% 90% 3:46 h

Standard IBF + PWM

4 Reduction of the Base removal to 2 %

V: motion synchronized, PiAlivisbeam control enables:

 in certain cases strong reduction of the processing time

2,0 4000 4500

0.75 0.9 0.45 Optimized parameter of linear ion beam source

Systematic edge error = 3.6 µm PV

10-410-310-210-1 spatial frequency f [nm-1]

Leibniz-Institut Manufacturing Technologies to Support Large Science Projects

Facet eye of a moth

Ion beam direction

Anti reflecting surface by self assembling nano-structures

GaSb IBE nano structured + Au

~ 5 cm 200 300 400 500 600 700 800 900 1000

 Sub-surface damage free Plasma jet

 Capability of sub-surface damage removal

3x103 “Wild” and large size

“Mild ” and medium

* for fused silica

PJM - Technological conditions PJM - fine tool machining

 High rate machining requires 0

 Sub-surface damages from Form measurement e.g. by interferometry or

X [mm] X [mm] X [mm]

Leibniz-Institut Leibniz-Institut Manufacturing Technologies to Support Large Science Projects

Setup for Plasma Jet

(10 PJM cycles)

Problem: reduced removal on workpiece edges at mechanical sub-aperture techniques

Residual error [pm]

35 nm 35 nm  PJM covers a wide range of applications like

- Reduction of figure and/or mid spatial errors (> 0.5 mm) -

Damage layer removal and surface preparation

Acknowledgements Thank You !

Thanks for Collaboration

IBF and PJM device and equipment

contracts FOR 365/1-1/2; SCHI 434/11-1

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