2N3442 HighPower Industrial Transistors

NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.
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Collector Emitter Sustaining Voltage VCEO(sus) = 140 Vdc (Min) Excellent Second Breakdown Capability PbFree Package is Available*
MAXIMUM RATINGS (Note 1)
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Base Current Continuous Peak Continuous Peak Symbol VCEO VCB VEB IC IB PD TJ, Tstg Value 140 160 7.0 10 15 7.0 117 0.67 65 to +200 Unit Vdc Vdc Vdc Adc Adc W W/_C _C

10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS

TO204AA (TO3) CASE 107 STYLE 1

Total Device Dissipation @ TC = 25_C Derate above 25_C (Note 2) Operating and Storage Junction Temperature Range

MARKING DIAGRAM

THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, JunctiontoCase Symbol RqJC Max 1.17 Unit _C/W 2N3442G AYWW MEX

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. This data guaranteed in addition to JEDEC registered data. 2N3442 G A Y WW MEX

= Device Code = PbFree Package = Assembly Location = Year = Work Week = Country of Origin

ORDERING INFORMATION
Device 2N3442 2N3442G *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006

Package TO204 TO204 (PbFree)

Shipping 100 Units / Tray 100 Units / Tray

February, 2006 Rev. 11

Publication Order Number: 2N3442/D


ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 140 Vdc, IB = 0) VCEO(sus) ICEO ICEX 140 Vdc 200 mAdc mAdc Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) 5.0 30 5.0 IEBO mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE 20 7.5 70 CollectorEmitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc) BaseEmitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc) VCE(sat) VBE(on) 5.0 5.7 Vdc Vdc DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) (IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz) SmallSignal Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) fT 80 12 kHz hfe 72 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| ftest PD /PD(MAX), POWER DISSIPATION (NORMALIZED) 1.0 0.8

2N3442

0.6

0.4

0.2

25

50 75 100 125 150 TC, CASE TEMPERATURE (C)

175

200

Figure 1. Power Derating

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2N3442
ACTIVE REGION SAFE OPERATING AREA INFORMATION
20 10 ms IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 2.0 3.0 TJ = 200C dc 30 ms 50 ms 100 ms 1.0 ms 100 ms

CURRENT LIMIT THERMAL LIMIT @ TC = 25C SINGLE PULSE SECOND BREAKDOWN LIMIT

There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 200_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
200

50 70 100 5.0 7.0 10 20 30 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 2. 2N3442

400 200 hFE , DC CURRENT GAIN 100 60 40 20 10 6.0 4.0 0.1 0.2 25C

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

TJ = 150C

1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 2.0 TJ = 25C 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1.0 k 2.0 k IC = 1.0 A 2.0 A 4.0 A 8.0 A

VCE = 4.0 V

55 C

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP)

5.0 7.0 10

Figure 3. DC Current Gain

Figure 4. CollectorSaturation Region

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2N3442
PACKAGE DIMENSIONS

TO204 (TO3) CASE 107 ISSUE Z

A N C T E D
2 PL SEATING PLANE

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 21.08 3.84 4.19 30.15 BSC 3.33 4.77

K
M

0.13 (0.005) U V
2

T Q

L G
1

Q 0.13 (0.005)

T Y

STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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2N3442/D