EE210: Microelectronics-I

Lecture-27 : MOSFET-1

B. Mazhari Dept. of EE, IIT Kanpur

B. Mazhari, IITK 1G-Number

Transistor

IO + VIN + Vo -

C Current t IO is i much h more sensitive iti t to VIN than th VO

I O I O Vin Vo

Field Effect Principle -2V

I O I O Vin Vo

5V

- - - - - - - - - -- - - - - - +

+ +

+ +

+ +

+ +

+ +

+ +

+ +

N-Type

Modulation of conductivity using electric field Transconductance

N-Type yp

Oxide

N-Type

Transistors
Transistor

BipolarJunction Transistor(BJT)

FieldEffectTransistor (FET)

MetalOxidesemiconductor fieldeffecttransistor (MOSFET)

Depletion-Mode Transistor
1V -1V

Gate Drain
Oxide

Source
0V

5V

n+

N-type

n+

p type p-type
0V

Body
In a depletion-mode p transistor, a channel exists without any y gate g voltage g being g applied and current flows when drain voltage is applied. Negative gate voltage is applied to deplete the channel of carriers and cause current to reduce.

Channel exists at zero gate voltage and is depleted by gate voltage -1V -3V

Gate
-2V

Source

Drain

Oxide

n+

n+

p-type Body
Channel is completely pinched off and current ~zero

NMOS Enhancement mode transistor: Inversion Mode

Transistor
G

Metal /Poly /Poly-Si Si SiO2

Al
N
+

Al
N
+

P-Silicon

Gate S Source
0V

Drain
5V

Oxide

n+

n+

p-type
0V

Body

No channel exists when gate voltage is zero and current is zero as well. ll

0.2V 0 2V Gate Source + + + + + + + + + + + 0V

Oxide

Drain +5V 5V

+ n+ + + + p-type + +

+ + + +
0V

+ + + +

+ n+ + + + + +

Body

Depletion Region is formed near the Si/SiO2 interface

0.4V 0 4V Gate Source + + + + + + + + + + + 0V

Oxide

Drain +5V 5V

- n+ + + + + + + p-type + +
Depletion width increases

- n+ + + + + + + + + +
Body

0V

n p n

2 i

But something interesting happens: electron density at the surface also increases

At a sufficiently large voltage (>VTHN) a channel of electrons forms at the Si/SiO2 interface.

Gate Source + + + + + + + + + + + + + +
Oxide

Drain

n+

------------------

n+

p-type Body
Depletion charge Sheet of electrons (inversion layer)

Conductivity modulation at the surface?

MOS capacitor constitutes the heart of a MOSFET

VG Gate
Oxide

+ + + + + + p-type +
p N A 10 cm
16 3

+ + + +

+ + + +

+ + + +

+ + + +

+ + + +

Body

ni2 n 104 cm 3 NA

Field Effect

ns ps n 10 cm
2 1 20

VG

0V

VT

Ps: 10 10
4

16

15

10 10

10

10 10

10 10

ns: 10 10

10

12

16

Inverted Surface P-Type Intrinsic Surface N-Type

10 Strong . Inversion

17

Surface carrier density can be changed from P-type to N-type

Surface Carrier Density

ps ns

NA

ps

ni ns VGB VT

Flat band condition

VG VFB
VG Gate
Whenever two different material are brought into contact contact, an internal potential difference develops like in a pn j junction. ti Th Thus even when no gate voltage is applied, there is a voltage across the mos capacitor.

Oxide

+ + + + + + + + + p-type + +

+ + + +

+ + + +

+ + + +

+ + + +

Body
VG = VFB ; Flat Flat-band band condition meaning no NET voltage across the capacitor. Uniform hole density everywhere

Depletion

VG VFB but VG VTHN

Gate
Oxide

+ + + + + + + + + + p-type + + + +
Body
Holes are depleted from the surface

+ + + + + +

Depletion region

pS pB

Although n S nB electron density is also very small

Strong Inversion

VG VTHN
Gate
Oxide

------------------------ + + + + + + + p-type + + + + + +
Body
Electrons are accumulated at the surface

Depletion region

nS N A

Accumulation

VG VFB
Gate
Oxide

++ + ++ + + + + + + + p-type + +

+ + + + +

+ + + +

++ + + + +

+ + + +

extra holes

Body

Holes are accumulated at the surface

pS pB

MetalOxideSemiconductorFieldEffectTransistor:
MOSFET

Depletion Mode

Enhancement Mode

N-Channel

P-Channel N-Channel

P-Channel

D G B

D B

B S

G S

Simplified Symbols and structure

D D

NMOS

S/B

Gate Source
Oxide

D i Drain
Body Source

Gate
Oxide

Drain

n+

n+

p+

n+

n+

p-type Body

p-type

Simplified Symbols and structure

Gate Source
D D

Drain

Oxide

B PMOS S

p+ p

p+ p

S/B

n-type n type Body

Gate Body n+ Source

Oxide

Drain

p+ p n-type yp

p+ p

G B p+ S D n+ B n+ S

G
Oxide

D p+ n-type

n+

p+

p-type

Body potential of NMOS transistors is same and is normally connected to the most negative voltage in the circuit to ensure that VBS < 0 and thus body-source PN junction is reverse biased. Each E h PMOS can b be f fabricated bi di in a separate i individual di id l N N-well ll and d thus h each pmos body terminal can have a distinct voltage. Normally body and source terminals of PMOS are shorted together.

G B p+ S
Oxide

G D n+ B p+ S
Oxide

D n+

n+

n+

p-type

Two NMOS side-by-side

G B n+ S
O id Oxide

G D p+ B n+ S
O id Oxide

D p+ n-type

p+

p+

Two PMOS side-by-side side by side in different n n-wells wells

p-type