MPS2907A

Preferred Device

General Purpose Transistors

PNP Silicon
http://onsemi.com
COLLECTOR 3 Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg 55 to +150 Watts mW/C C 1 2 3 mW mW/C TO92 CASE 29 STYLES 1, 14 Value 60 60 5.0 600 Unit Vdc Vdc Vdc mAdc 1 EMITTER STYLE 1 2 BASE

MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range

MARKING DIAGRAMS
Unit C/W C/W Y WW = Year = Work Week MPS2 907A YWW

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RJA RJC Max 200 83.3

ORDERING INFORMATION
Device MPS2907A MPS2907ARLRA MPS2907ARLRE MPS2907ARLRM MPS2907ARLRP Package TO92 TO92 TO92 TO92 TO92 Shipping 5000 Units/Box 2000/Tape & Reel 2000/Ammo Pack 2000/Ammo Pack 2000/Ammo Pack

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

October, 2001 Rev. 0

Publication Order Number: MPS2907A/D

MPS2907A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1.) (IC = 10 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 mAdc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 150C) Base Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) V(BR)CEO 60 V(BR)CBO V(BR)EBO ICEX ICBO IB 0.01 10 50 nAdc 60 5.0 50 Vdc Vdc nAdc Adc Vdc

ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1.) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1.) CollectorEmitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) BaseEmitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 75 100 100 100 50 VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc 300 Vdc

SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Notes 1. and 2.), (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 8.0 30 MHz pF pF

SWITCHING CHARACTERISTICS
TurnOn Time Delay Time Rise Time TurnOff Time Storage Time Fall Time 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. (VCC = 6.0 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) Ad ) (Figure (Fi 2) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 15 mAdc) Ad ) (Figures (Fi 1 and d 5) ton td tr toff ts tf 45 10 40 100 80 30 ns ns ns ns ns ns

http://onsemi.com
2

MPS2907A
INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k -30 V 200 TO OSCILLOSCOPE RISE TIME 5.0 ns INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -30 V 200 ns +15 V -6.0 V 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916

1.0 k 1.0 k 50

Figure 1. Delay and Rise Time Test Circuit

Figure 2. Storage and Fall Time Test Circuit

TYPICAL CHARACTERISTICS
3.0 hFE , NORMALIZED CURRENT GAIN 2.0

VCE = -1.0 V VCE = -10 V

TJ = 125C 25C

1.0 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -55C

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

-1.0 -0.8 -0.6 -0.4 -0.2 0 -0.005

IC = -1.0 mA

-10 mA

-100 mA

-500 mA

-0.01

-0.02 -0.03 -0.05 -0.07 -0.1

-0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA)

-2.0

-3.0

-5.0 -7.0 -10

-20 -30

-50

Figure 4. Collector Saturation Region

http://onsemi.com
3

MPS2907A
TYPICAL CHARACTERISTICS

300 200 100 70 50 30 20 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT td @ VBE(off) = 0 V tr

500 VCC = -30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 100 70 50 30 20 2.0 V -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C

t, TIME (ns)

ts = ts - 1/8 tf

-20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA)

Figure 5. TurnOn Time

Figure 6. TurnOff Time

TYPICAL SMALLSIGNAL CHARACTERISTICS

NOISE FIGURE VCE = 10 Vdc, TA = 25C
10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 10 f = 1.0 kHz NF, NOISE FIGURE (dB) 8.0 6.0 4.0 2.0 0

IC = -50 A -100 A -500 A -1.0 mA

0.5 1.0 2.0

5.0 10

20

50

100

50

100

200

500 1.0 k 2.0 k

5.0 k 10 k

20 k

50 k

f, FREQUENCY (kHz)

Rs, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects

Figure 8. Source Resistance Effects

http://onsemi.com
4

MPS2907A
TYPICAL SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C
30 20 C, CAPACITANCE (pF) Ceb f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 400 300 200

10 7.0 5.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 Ccb

100 80 60 40 30 20 -1.0 -2.0

VCE = -20 V TJ = 25C

-5.0

-10

-20

-50

-100 -200

-500 -1000

REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 9. Capacitances

Figure 10. CurrentGain Bandwidth Product

-1.0 TJ = 25C -0.8 V, VOLTAGE (VOLTS) -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = -10 V

+0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 RqVB for VBE -5.0 -10 -20 -50 -100 -200 -500 RqVC for VCE(sat)

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 11. On Voltage

Figure 12. Temperature Coefficients

http://onsemi.com
5

MPS2907A
PACKAGE DIMENSIONS TO92 TO226AA CASE 2911 ISSUE AL
A R P L
SEATING PLANE

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE

X X G H V
1

D J C SECTION XX N N

DIM A B C D G H J K L N P R V

STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR

http://onsemi.com
6

MPS2907A

Notes

http://onsemi.com
7

MPS2907A

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 8002829855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031 Phone: 81357402700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.

http://onsemi.com
8

MPS2907A/D

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.