2SD768(K)

Silicon NPN Epitaxial

Application
Medium speed and power switching complementary pair with 2SB727(K)

Outline
TO-220AB

1 1. Base 2. Collector (Flange) 3. Emitter

2 3

3 k (Typ)

200 (Typ) 3

Absolute Maximum Ratings (Ta = 25C)

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1

Ratings 120 120 7 6 10 40 150 55 to +150

Unit V V V A A W C C

2SD768(K)
Electrical Characteristics (Ta = 25C)
Item Symbol Min 120 7 1000 Typ 1.0 3.0 Max 100 10 20000 1.5 3 2 3.5 V V V V s s Unit V V A A Test conditions I C = 25 mA, RBE = I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE= VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 6A, IB = 60 mA*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 I C = 3 A, IB1 = IB2 = 6 mA I C = 3 A, IB1 = IB2 = 6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t off

Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 30 Collector current IC (A) 10 3 1.0 0.3 0.1 0.03 0 50 100 Case temperature TC (C) 150 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V) iC(peak) IC(max) 1 s Area of Safe Operation

10 0

40

PW
era

DC

5C s =2 1 m 0 ms C n(T tio

=1

Op

20

Ta = 25C 1 shot pulse

2SD768(K)
Typical Output Characteristics 10 10,000 TC = 25C DC current transfer ratio hFE 3,000 DC Current Transfer Ratio vs. Collector Current

Collector current IC (A)

6
1.2 1.0 0.8 0.6

Ta
1,000

C 75

25

C
C 5

0.4
2 0.2 mA
IB = 0

VCE = 3 V Pulse

300

1 2 3 4 5 Collector to emitter voltage VCE (V)

100 0.1

0.3 1.0 3 Collector current IC (A)

10

Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Base to emitter sauration voltage VBE(sat) (V) 10 TC = 25C 3 VBE(sat) 1.0
IC/IB = 200 500 00 5 = I C/I B 200

Switching Time vs. Collector Current 10 3 Switching time t (s) 1.0 0.3 0.1 0.03 tstg ton tf VCC = 30V IC = 500 IB1 = 500 IB2 Ta = 25C

VCE(sat) 0.3

0.1 0.1

1.0 3 0.3 Collector current IC (A)

10

0.01 0.1

3 0.3 1.0 Collector current IC (A)

10

2SD768(K)
Transient Thermal Resistance 10 Thermal resistance j-c (C/W) 3 1.0 0.3 0.1 0.03 0.01 1 1 10 10 Time t 100 100 1,000 (s) 1,000 (ms) TC = 25C 1 to 1,000 s 1 to 1,000 ms

Unit: mm

11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08
+0.1

4.44 0.2 1.26 0.15

6.4

+0.2 0.1

18.5 0.5

15.0 0.3

1.27

2.7 MAX 14.0 0.5 1.5 MAX

7.8 0.5

0.76 0.1

2.54 0.5

2.54 0.5

0.5 0.1

Hitachi Code JEDEC EIAJ Weight (reference value)

TO-220AB Conforms Conforms 1.8 g

Cautions
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