Dept.

of Printed Electronics Engineering YUTAKA MAJIMA 2012 WCU program

9. Drift Current and Diffusion Current

Key Points To learn two current conduction mechanisms of drift current and diffusion current, and Einstein relation (the relationship between diffusion constant and mobility in thermal equilibrium).

Conduction systems in semiconductor

Drift current Diffusion current Drift current: Carriers drift by electric field In low electric field

je = qnv = qn e F p-type j h = qpv = qp h F

n-type Diffusion current: Carriers diffuse to the area at lower carrier concentration Not doped semiconductor: pn = ni2p = n Carrier density ni1010 cm-3 Doped semiconductor: Carrier density 10161019~20 cm-3 Carrier concentration gradient exists in semiconductor. (Huge number of free electron exists in metal. Therefore, the gradient does not exist In high electric field, the carrier velocity cannot follow the relationship v = F because of lattice vibration.(Velocity is saturated)

Holes diffuse from higher concentration area to lower one. Electrical current: the amount of charge through in unit time [A] = [C/s] Diffusion moves carrier. Diffusion current

Solid-State Physics and Electronics [9]

1/4

Dept. of Printed Electronics Engineering YUTAKA MAJIMA 2012 WCU program

Hole diffusion the number of diffused holehole concentration gradient Let proportionality coefficient Dh,Dhdiffusion constant [cm2/s]

j h = !qD h

dp dx

Electron diffusion Current direction is opposite to the direction which electrons move in. Let electron proportionality coefficient De,

je = qDe

dn dx

Total electrical current in semiconductor is the sum of drift current and diffusion current.

dn # & ! dx " % dp # & hole current j h = q$ p h F ' Dh ! dx " %

electron current j e = q$ n e F + De

Solid-State Physics and Electronics [9]

2/4

Dept. of Printed Electronics Engineering YUTAKA MAJIMA 2012 WCU program Einstein relationRelationship between diffusion constant and mobility
Diffusion constant: the parameter that shows how easy the carrier moves. related to the carrier mobility. Considering the case that the carrier is hole. The electric field at the position x is,

F =!

dV ( x) dx
(Fermi level EF is the base of energy level)

Suppose the x is,

Maxwell-Boltzmann distribution is available, the carrier density at the position

& qV ( x) # p = N V exp$ ' ! kT " %

v

Therefore,

dp dp dV q dV qp = =! p = F dx dV dx kT dx kT
In thermal equilibrium state, no electrical current flows in semiconductor. j h = q$ p h F ' Dh

& %

dp # !=0 dx "

As a result, the Einstein relation can be derived. Dh =

kT h q

In the case that the carrier is electron, the Einstein relation can be derived in the same manner as hole. De =

kT e q

In inorganic semiconductor, diffusion constant D is proportional to mobility

Solid-State Physics and Electronics [9]

3/4

Dept. of Printed Electronics Engineering YUTAKA MAJIMA 2012 WCU program Majority carrier injection
Carrier injection: To increase the carrier density from thermal equilibrium state (Thermal diffusion, ion injection etc.) In the case of majority carrier (hole) injection.

Inject hole in p-type semiconductor

the amount of injected hole is less than that of initial density Excess holes are spread in a short period of time (~ 1 ps [10-12 s]). Dielectric relaxation phenomena (Supplement: the derivation of dielectric relaxation phenomena by using vector formula) Time variation of excess carrier density !p can be written as q

"#p = !divi "t

(i: current density)

Suppose V is the potential by excess carrier, current density i derived from Ohms law is,

i = "! gradV (In one dimensional x: i = "#

q"p

dV = #F ) dx

The potential V can be written from Poissons equation as $ 2V = #

! r! 0

By using vector formula " 2V

= div ! (grad V ),

%#p "#p =$ %t ! r! 0

!p can be written as a time-dependent function, ,p (t ) = ,p (0) exp( +

" " * t ' %, # $ = r 0 (!: dielectric relaxation time) ! ) #$&

Suppose p-type Si carrier density is 1018 cm-3, ! is calculated as below. ( ! r =11.7" =10 S/cm =1000 S/m)

$# =

11.7 " 8.854 " 10 !12 = 1.04 " 10 !13 s 1000

Solid-State Physics and Electronics [9]

4/4