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BFP640

NPN Silicon Germanium RF Transistor High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz High maximum stable gain Gms = 24 dB at 1.8 GHz Gold metallization for extra high reliability 70 GHz fT -Silicon Germanium technology Pb-free (RoHS compliant) package 1) Qualified according AEC Q101

3 4 1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type BFP640
1Pb-containing

Marking R4s 1=B

Pin Configuration 2=E 3=C 4=E -

Package SOT343

package may be available upon special request

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BFP640
Maximum Ratings Parameter Collector-emitter voltage TA > 0 C TA 0 C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 90C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value 300 Unit K/W Tj TA T stg 150 -65 ... 150 -65 ... 150 C VCES VCBO VEBO IC IB Ptot Symbol VCEO 4 3.7 13 13 1.2 50 3 200 mW mA Value Unit V

Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 30 mA, VCE = 3 V, pulse measured
1T

Unit max. 30 100 3 270 V A nA A -

typ. 4.5 180

V(BR)CEO ICES ICBO IEBO hFE

4 110

S is measured on the collector lead at the soldering point to the pcb 2For calculation of R thJA please refer to Application Note Thermal Resistance

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BFP640
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 30 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz f = 6 GHz Third order intercept point at output2) VCE = 3 V, I C = 30 mA, ZS =ZL=50 , f = 1.8 GHz 1dB Compression point at output IC = 30 mA, VCE = 3 V, ZS =ZL=50 , f = 1.8 GHz
1/2 ma = |S 21e / S12e| (k-(k-1) ), Gms = |S21e / S12e | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
1G

30 -

40 0.09

0.2

GHz pF

Ccb

Cce

0.23

Ceb

0.5

F G ms 0.65 1.2 24 -

dB

dB

G ma

12.5

dB

|S21e|2 IP 3 P-1dB 21 10.5 26.5 13 -

dB

dBm

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BFP640
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 1.8 2.707 227.6 1.8 0.4 0.6 0.2 0.27 3 2 -0.0065 fA V V fF ps A V ns -

BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = TITF2

450 0.15 55 3.8 3.129 0.6 0.8 10 0 0.5 93.4 -1.42 0.8 7.291E-11 1.0E-5

A mA
V deg fF -

NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM

1.025 21 1 400 1.522 3.061 0.3 1.5 67.43 1 0.6 1.078 298

fA fA mA V fF V eV K

All parameters are ready to use, no scalling is necessary.

Package Equivalent Circuit:


CBS RBS

CBCC

LCC

C BFP640_Chip B S RCS E RES CES CCS LCB

LBB

LBC

CBEC

LEC

CBE I LEB CBEO CCEO

CCEI

T = 25C Itf = 400* ( 1 - 6.5e-3 * (T-25) + 1.0e-5 * (T-25)^2 )

For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com

LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CCEO = CBEO = CCEI = CBEI = RBS = RCS = RES =

120 120 20 696.2 682.4 230.6 98.4 55.9 180 79 75 131.2 102.5 112.6 180.4 1200 1200 300

pH pH pH pH pH pH fF fF fF fF fF fF fF fF fF

Valid up to 6GHz

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BFP640
Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p)

220
mW

10 3

180 160 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150

K/W

RthJS
10 2

Ptot

0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0


10 1 -7 10 10
-6

10

-5

10

-4

10

-3

10

-2

10

TS

tp

Permissible Pulse Load Ptotmax/P totDC = (tp)


10 1

Collector-base capacitance Ccb= (VCB) f = 1MHz

0.25

Ptotmax /PtotDC

pF

D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

CCB
-3 -2

0.15

0.1

0.05

10 0 -7 10

10

-6

10

-5

10

-4

10

10

10

0 0

10

14

tp

VCB

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BFP640
Third order Intercept Point IP3=(IC)
(Output, ZS=ZL=50)

Transition frequency fT= (IC) f = 1GHz VCE = parameter


45
GHz

VCE = parameter, f = 1.8 GHz


30
dBm

24 21
4V

35 30

3V

IP3

18
3V

fT
25 20 15
2V 2V

15 12 9 6 3 0 0 10

1V

5
0.5V

10

20

30

40

mA

60

0 0

10

20

30

40

mA

60

IC

IC

Power gain Gma, Gms = (IC) VCE = 3V f = parameter


30
dB 0.9GHz

Power Gain Gma, Gms = (f),


|S21| = f (f)

VCE = 3V, IC = 30mA


55
dB

26 24

45 40

22 20 18 16
4GHz

G
35

1.8GHz

2.4GHz

30
3GHz

Gms

25 20 15 10 0
|S21| Gma

14
5GHz

12 10 0

6GHz

10

20

30

40

mA

60

GHz

IC

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BFP640
Power gain Gma, Gms = (VCE) IC = 30mA f = parameter
30
0.9GHz dB 1.8GHz
2.4 2.2 2 1.8

Noise figure F = (I C) VCE = 3V, ZS = ZSopt

20

2.4GHz 3GHz
1.6 1.4
F [dB]

15

4GHz 5GHz 6GHz

1.2 1 0.8 0.6


f = 6GHz f = 5GHz f = 4GHz f = 3GHz

10

5
0.4 0.2

f = 2.4GHz f = 1.8GHz f = 0.9GHz

0 0

0.5

1.5

2.5

3.5

0 0 10 20
I [mA]
c

VCE

30

40

50

Noise figure F = (IC ) VCE = 3V, f = 1.8 GHz

Noise figure F = (f) VCE = 3V, ZS = Z Sopt

1.8

1.8

1.6

1.6

1.4

1.4

1.2
F [dB] F [dB]
Z = 50
S

1.2

0.8
Z =Z
S Sopt

0.8
IC = 30mA

0.6

0.6

IC = 5.0mA

0.4

0.4

0.2

0.2

0 0 10 20
I [mA]
c

0 30 40 50 0 1 2 3
f [GHz]

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BFP640
Source impedance for min.
noise figure vs. frequency

VCE = 3 V, I C = 5 mA/ 30 mA

1 1.5 0.5 0.4 0.3 0.2


2.4GHz I = 5.0mA
c

2 3 4 5 10
0.9GHz 1 1.5 5GHz 6GHz 2 3 4 5

0.1 0 0.1 0.2 0.3 0.4 0.5


0.1

1.8GHz

3GHz 0.2 0.3 0.4 0.5 4GHz

10 5 4

I = 30mA c

3 2 1.5 1

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Package SOT343

BFP640

Package Outline
2 0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1
M +0.1 0.6 -0.05

0.9 0.1 0.1 MAX. 0.1 A


1.25 0.1 2.1 0.1

0.1 MIN.

0.15 -0.05 0.2


M

+0.1

Foot Print
0.6
0.8

1.15 0.9

Marking Layout (Example)


Manufacturer

1.6

2005, June Date code (YM)

Pin 1

BGA420 Type code

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.2

Pin 1

2.15

2.3

1.1

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BFP640
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Mnchen, Germany Infineon Technologies AG 2007. All Rights Reserved.

Attention please!
The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ).

Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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