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Course: Nanotechnology Pham Huy Tuan (Ph.D)

MARCH 23, 201

Introduction Silicon Optical lithography Deposition Thermal oxidation, diffusion, ion implantation

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1. Cubic-crystal unit cells

Figure. Three cubic-crystal unit cells. (a) Simple cubic. (b) Bodycentered cubic. (c) Face-centered cubic.

Silicon crystal structure

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Czochralski crystal growth

Simplified schematic drawing of the Czochralski puller. Clockwise (CW), counterclockwise (CCW).

Crystal growing

http://www.fullman.com/

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Silicon crystal plane !""#

z z <100> plane x x z <110> plane x
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<100> plane

<111 > y plane

2! Manu"actur#ng $rocess "or %C

$as%&'eticle $anufacture

,ircuit Design Data5ase

$elt ,rystal +ro1th

*lectronic +rade (olysilicon

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Single ,rystal Silicon -.oule and /afers0
2ilm Deposition -,3D, (*,3D, etc0 (attern -(hotolithography0

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*tch -'I*,(lasma,etc0

'epeat ,ycle for *ach 4ayer

(ac%age ) Test

Test ) Dice

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&ther $rocesses a"ter l#thogra$hy

Etching

Deposition

(hysical 3apor Deposition ,hemical 3apor Deposition Other Deposition Techni6ues

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7 (3D is the method for metallic thin8film deposition9 7 $aterial is in:ected from a solid target material and transport in ;acuum to the su5strate surface9
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(hysical 3apor Deposition

7 <toms can 5e e:ected from the target 5y=
Open source resisti;e heating *lectron 5eam heating *6uili5rium source heating <rgon ion 5om5ardment 4aser 5eam 5om5ardment Thermal e;aporation *85eam e;aporation $olecular 5eam epitaxy Sputtering <5lation

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*;aporation and $olecular 5eam epitaxy

Evaporation
7 >eated metals ha;e high ;apor pressure and in high ;acuum9 7 The e;aporated atoms 1ill 5e transported to the su5strate9 7 There is no 5om5ardment9 7 ?niformity is fixed9 7 4o1 melting8point metal -<u, <l, 990 can easily 5e e;aporated9 7 'efractory metals re6uire more sophisticated heating methods9 7 The molten metal reacts 1ith the cruci5le -$o, Ta, /, graphite, .@, SiOA, BrOA09
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*;aporation and $olecular 5eam epitaxy

$olecular 5eam epitaxy
7 The source material is heated in an e6uili5rium source -Cnudsen cell09 7 <n atomic 5eam exits the cell through an orifice9 7 $ore sta5le than open sources9 7 ,ompound e;aporation is difficult

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Sputtering
7 <toms are e:ected from a solid target material due to 5om5ardment of the target 5y energetic particles li%e atoms or ions9 7 <dhesion to a su5strate is high 7 The only film deposition method that an alloy film can form 7 The high melting point ra1 materials 1hich are difficult 1ith ;acuum deposition method can form a film 7 It is easy to control attri5utions of a film 7 < clean film formation method
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Sputter system

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Sputter

,ooling system

Sputtering cham5er

,ontrolling system

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$echanical pump

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Sputter

Diffusion pump

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7 The source materials are 5rought in gas phase into the ;icinity of the su5strate9 7 They decompose and react to deposit film9 7 +aseous 5y8products are pumped a1ay9

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,hemical 3apor Deposition

7 Decomposition of source gas is induced either 5y Temperature -thermal ,3D0 (lasma -(lasma8enhanced ,3D, (*,3D0 7 Thermal ,3D= D"" to E""o, 7 (*,3D= !"" to F""o,9

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,3D 3ariants

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(*,3D
7 /afers are placed on a heated 5ottom electrode9 7 Source gases are introduced from the top, and pumped a1ay around the 5ottom electrode9

7 In thermal ,3D, pressure, temperature, flo1 rate and flo1 rate ratio are main ;aria5les9 7 In (*,3D, additional ;aria5le is '2 po1er9
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*lectroless deposition *lectroplating Spin coating Sol8gel

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*lectroplating system

7 /afer is connected to a cathode in metal8ion containing electrolyte solution9 7 ,ounterelectrode is either passi;e, li%e platinum, or made of the metal to 5e deposited9 7 'eduction reaction= ,uAG G Ae8 ,u -s0, electrolyte solution ,uSOF9
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Spin coating

7 The main parameters for film thic%ness control are ;iscosity, sol;ent e;aporation rate and spin speed control9 -50 Slo1 rotation of ca9 D""rpm9 -c0 <cceleration to ca9 H"""rpm spreads the li6uid to1ards the edges9
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'eferences
!9 Sami 2ranssila, IIntroduction to $icro 2a5ricationJ /iley, A""F9 A9 http=&&1119memsnet9org&a5out&fa5rication9html D9 http=&&1119:udyla59org&do%u9phpKidLacademics=classes=eeMcm!H"l=1ee%M" F9 N9>9 4 i n and /9 >su, I(olymer as the protecting passi;aton layer in fa5ricating suspended S,S structures in 5oth,J J. Micromech. Microeng., 3ol9 AA -A"!A0, p9"FH"!H9 H9 Shin, S9O9 et al., I2iring fre6uency impro;ement of 5ac% shooting in%8:et print head 5y thermal management,J Transducers03 -A""D0, p9 DP"9

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A novel CMOS out-of-plane accelerometer

CHUANWEI WANG ET AL., JOURNAL OF MICROMECHANICS AND MICROENGINEERING. VOL. 17 (2007) 1275-1280

Nanotechnology

Introduction Schematic of devices Sensing principle Fabrication process Testing Conclusions

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OUTLINE

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Nanotechnology

J. Micromech. Microeng.

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Introduction
An accelerometer is a device that measures proper acceleration. It is the acceleration associated with the phenomenon of weight experienced by any test mass at rest in the frame of reference of the accelerometer device.
Gap-closing sensing electrodes Parallel vertical comb sensing electrodes

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Nanotechnology

Introduction

Accelerometer applications:

Automotive industry. Cell phone. Digital still camera (DSC) Laptops and video games.
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Introduction

Previous accelerometers: sensing circuits and mechanical devices are separated. The use of standard CMOS process to fabricate MEMS devices to have the monolithic integration of IC and MEMS components

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CIC CMOS MEMS SCHEMATIC

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Schematic of the CMOS accelerometer

The sensing electrodes attached to Proof mass act as moving electrodes Supporting frame act as stationary electrodes.
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Sensing principle
Gap-closing sensing electrodes Parallel vertical comb sensing electrodes

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Design concept
Critical design considerations:

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Sensing area is increased. Sub-micron gap of 0.65mm. Fully differential sensing electrodes.

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Fabrication process steps

After the TSMC 0.35mm 2P4M CMOS process
Metal wet etching for a sub-micron gap Remove silicon oxide by RIE, M4 is mask. Release structure by XeF2 isotropic etching
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Details of metal wet etching

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SEM image of fabricated accelerometer

The SEM (scanning electron microscopy) photos. The reinforced rib is exploited to prevent the sensing electrodes from bending by residual stress.
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The test setup

The shaker and function generator were used to specify a base motion to excite the packaged accelerometer.

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Testing results

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Output voltage vs. input acceleration

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Conclusions
The CMOS accelerometer has been demonstrated using the standard TSMC CMOS-MEMS 2P4M process plus the post-release technique.

A post-CMOS wet-etching process has been established to realize a sub-micron sensing gap. The present design is ready to integrate with the existing in-plane CMOS accelerometers, a monolithic three-axis CMOS accelerometer can be realized.

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Thank you!

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