FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

July 2001

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits

Features
100kHz Operation at 390V, 14A 200kHZ Operation at 390V, 9A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC Low Gate Charge . . . . . . . . . 23nC at VGE = 15V Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ Low Conduction Loss

IGBT formerly Developmental Type TA49336 Diode formerly Developmental Type TA49390

Package
JEDEC STYLE TO-247

Symbol
C

C G

JEDEC STYLE TO-220AB

JEDEC STYLE TO-263AB

G C G E
G

Device Maximum Ratings TC= 25C unless otherwise noted

Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25C Collector Current Continuous, TC = 110C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150C, Figure 2 Pulsed Avalanche Energy, ICE = 12A, L = 2mH, VDD = 50V Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Ratings 600 45 20 108 20 30 60A at 600V 150 167 1.33 -55 to 150 -55 to 150 mJ W W/C C C Units V A A A V V

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: 1. Pulse width limited by maximum junction temperature.

2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

Package Marking and Ordering Information

Device Marking 30N6S2D 30N6S2D 30N6S2D Device FGB30N6S2D FGP30N6S2D FGH30N6S2D Package TO-263AB TO-220AB TO-247 Tape Width 24mm Quantity 800 -

Electrical Characteristics TJ = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current IC = 250A, VGE = 0 VCE = 600V TJ = 25C TJ = 125C VGE = 20V 600 250 2 250 V A mA nA

On State Characteristics
VCE(SAT) VEC Collector to Emitter Saturation Voltage Diode Forward Voltage IC = 12A, VGE = 15V IEC = 12A TJ = 25C TJ = 125C 1.95 1.8 2.1 2.5 2.0 2.5 V V V

Dynamic Characteristics
QG(ON) VGE(TH) VGEP Gate Charge Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage IC = 12A, VCE = 300V VGE = 15V VGE = 20V IC = 250A, VCE = 600V IC = 12A, VCE = 300V 3.5 23 26 4.3 6.5 29 33 5.0 8.0 nC nC V V

Switching Characteristics
SSOA td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF trr Switching SOA Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Diode Reverse Recovery Time TJ = 150C, RG = 10, VGE = 15V, L = 100H, VCE = 600V IGBT and Diode at TJ = 25C, ICE =12A, VCE = 390V, VGE = 15V, RG =10 L = 500H Test Circuit - Figure 26 IGBT and Diode at TJ = 125C ICE = 12A, VCE = 390V, VGE = 15V, RG = 10 L = 500H Test Circuit - Figure 26 IEC = 12A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s 60 6 10 40 53 55 110 100 11 17 73 90 55 160 250 35 25 150 100 100 200 350 46 32 A ns ns ns ns J J J ns ns ns ns J J J ns ns

Thermal Characteristics
RJC
NOTE: 2. Values

Thermal Resistance Junction-Case

IGBT Diode

0.75 2.0

C/W C/W

for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 26.
3. Turn-Off

Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

2001 Fairchild Semiconductor Corporation

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

Typical Performance Curves

ICE, COLLECTOR TO EMITTER CURRENT (A) 50 ICE , DC COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC, RG = 10, VGE = 15V, L = 100mH

40

30

20

10

0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC)

Figure 1. DC Collector Current vs Case Temperature

1000 fMAX, OPERATING FREQUENCY (kHz) TC 75oC

Figure 2. Minimum Switching Safe Operating Area

tSC , SHORT CIRCUIT WITHSTAND TIME (s)

VCE = 390V, RG = 10, TJ = 125oC 10 300

VGE = 10V

VGE = 15V

8 tSC 6 ISC

250

100

fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.49oC/W, SEE NOTES TJ = 125oC, RG = 3, L = 200mH, V CE = 390V

200

150

2 9 10 11 12 13 14 15

100 16

10

10 ICE, COLLECTOR TO EMITTER CURRENT (A)

20

30

VGE , GATE TO EMITTER VOLTAGE (V)

Figure 3. Operating Frequency vs Collector to Emitter Current

ICE, COLLECTOR TO EMITTER CURRENT (A) 18 16 14 12 10 8 6 TJ = 150oC 4 2 0 0.50 TJ = 25oC TJ = 125oC DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250ms ICE, COLLECTOR TO EMITTER CURRENT (A)

Figure 4. Short Circuit Withstand Time

18 16 14 12 10 8 6 4 2 0 .5 .75 1 1.25 1.50 TJ = 25oC 1.75 2.0 2.25 TJ = 150oC DUTY CYCLE < 0.5%, VGE =15V PULSE DURATION = 250ms

TJ = 125oC

0.75

1.00

1.25

1.50

1.75

2.00

2.25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector to Emitter On-State Voltage

Figure 6. Collector to Emitter On-State Voltage

2001 Fairchild Semiconductor Corporation

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

ISC, PEAK SHORT CIRCUIT CURRENT (A)

12

350

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

Typical Performance Curves (Continued)

400 350 300 TJ = 125oC, VGE = 10V, VGE = 15V 250 200 150 100 TJ = 25oC, VGE = 10V, VGE = 15V 50 0 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) EOFF TURN-OFF ENERGY LOSS (J) EON2 , TURN-ON ENERGY LOSS (J) RG = 10, L = 500mH, VCE = 390V 600 RG = 10, L = 500mH, VCE = 390V 500

400 TJ = 125oC, VGE = 10V, VGE = 15V 300

200

100 TJ = 25oC, VGE = 10V, VGE = 15V 0 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A)

Figure 7. Turn-On Energy Loss vs Collector to Emitter Current

16 td(ON)I, TURN-ON DELAY TIME (ns) RG = 10, L = 500H, VCE = 390V 14

Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current

30 RG = 10, L = 500mH, VCE = 390V 25 trI , RISE TIME (ns)

12 10 TJ = 25oC, TJ = 125oC, VGE = 10V 8 6 4 TJ = 25oC, TJ = 125oC, VGE = 15V 2 0

20 TJ = 125oC, VGE = 15V, VGE = 10V 15

10 TJ = 25oC, VGE = 10V, VGE =15V 5

10

15

20

25

10

15

20

25

ICE , COLLECTOR TO EMITTER CURRENT (A)

ICE , COLLECTOR TO EMITTER CURRENT (A)

Figure 9. Turn-On Delay Time vs Collector to Emitter Current

90 td(OFF) TURN-OFF DELAY TIME (ns) RG = 10, L = 500H, VCE = 390V 80 70 60 50 40 30 20 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A)

Figure 10. Turn-On Rise Time vs Collector to Emitter Current

120 RG = 10, L = 500H, VCE = 390V

tfI , FALL TIME (ns)

100 TJ = 125oC, VGE = 10V OR 15V 80

60 TJ = 25oC, VGE = 10V OR 15V 40

10

15

20

25

ICE , COLLECTOR TO EMITTER CURRENT (A)

Figure 11. Turn-Off Delay Time vs Collector to Emitter Current

Figure 12. Fall Time vs Collector to Emitter Current

2001 Fairchild Semiconductor Corporation

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

Typical Performance Curves (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A) 175 150 125 TJ = 25 C 100 75 50 25 0 5 6 7 8 9 10 11 12 13 14 15 16 VGE , GATE TO EMITTER VOLTAGE (V) TJ = 125oC TJ = -55 C
o o

16
PULSE DURATION = 250s
VGE, GATE TO EMITTER VOLTAGE (V)

DUTY CYCLE < 0.5%, VCE = 10V

IG(REF) = 1mA, RL = 25, TJ = 25oC

14 12
VCE = 600V

10 8 6
VCE = 400V

4
VCE = 200V

2 0 0 2 4 6 8 10 12 14 16 18 20 22 24

QG , GATE CHARGE (nC)

Figure 13. Transfer Characteristic

ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)

Figure 14. Gate Charge

1.2
RG = 10 , L = 500mH, VCE = 390V, VGE = 15V

10 TJ = 125oC, L = 500H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF

1.0

ETOTAL = EON2 + EOFF ICE = 24A

0.8

0.6

ICE = 24A

0.4

ICE = 12A

ICE = 12A

0.2

ICE = 6A

ICE = 6A 0.1

0 25 50 75 100
o

125

150

1.0

10

100

1000

TC , CASE TEMPERATURE ( C)

RG, GATE RESISTANCE ()

Figure 15. Total Switching Loss vs Case Temperature

VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.4 FREQUENCY = 1MHz 1.2 C, CAPACITANCE (nF) 1.0 0.8 CIES 0.6 0.4 0.2 CRES 0.0 0 10 20 30 40 50 60 70 80 90 100

Figure 16. Total Switching Loss vs Gate Resistance

3.5 DUTY CYCLE < 0.5% PULSE DURATION = 250s, TJ = 25oC 3.0

2.5

ICE = 24A

ICE = 12A 2.0 ICE = 6A

COES

1.5 6 7 8 9 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 17. Capacitance vs Collector to Emitter Voltage

Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage

2001 Fairchild Semiconductor Corporation

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

Typical Performance Curves (Continued)

24 trr, REVERSE RECOVERY TIMES (ns) DUTY CYCLE < 0.5%, PULSE DURATION = 250s IEC , FORWARD CURRENT (A) 20 200 dIEC/dt = 200A/s, VCE = 390V 175 150 125 100 75 50 25 25oC ta 0 0 0.5 1.0 1.5 2.0 2.5 3.0 2 4 6 8 10 12 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A) 125oC tb 25oC trr 125oC trr

16 125oC 12 25oC

25oC tb 125oC ta

Figure 19. Diode Forward Current vs Forward Voltage Drop

175 trr , REVERSE RECOVERY TIMES (ns) IEC = 12A, VCE = 390V 150 125 100 75 50 125oC ta 25 25oC ta 0 200 300 400 500 600 700 800 900 1000 25 C tb
o

Figure 20. Recovery Times vs Forward Current

300 Qrr , REVERSE RECOVERY CHARGE (nC) VCE = 390V 250 125oC, IEC = 12A

125oC tb

200 125oC, IEC = 6A 25oC, IEC = 12A

150

100

50

25oC, IEC = 6A

0 200

300

400

500

600

700

800

900

1000

dIEC/dt, RATE OF CHANGE OF CURRENT (A/ms)

dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)

Figure 21. Recovery Times vs Rate of Change of Current

S, REVERSE RECOVERY SOFTNESS FACTOR 7.0 VCE = 390V, TJ = 125C 6.5 6.0 IEC = 12A 5.5 5.0 4.5 4.0 3.5 3.0 200 IEC = 6A

Figure 22. Stored Charge vs Rate of Change of Current

IRRM, MAX REVERSE RECOVERY CURRENT (A)

10 9 8

VCE = 390V, TJ = 125C IEC = 12A

IEC = 6A 7 6 5 4 3 200

300

400

500

600

700

800

900

1000

300

400

500

600

700

800

900

1000

dI EC/dt, CURRENT RATE OF CHANGE (A/s)

dIEC/dt, CURRENT RATE OF CHANGE (A/s)

Figure 23. Reverse Recovery Softness Factor vs Rate of Change of Current

Figure 24. Maximum Reverse Recovery Current vs Rate of Change of Current

2001 Fairchild Semiconductor Corporation

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

Typical Performance Curves (Continued)

ZqJC , NORMALIZED THERMAL RESPONSE

100 0.50

0.20 0.10 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 t1 , RECTANGULAR PULSE DURATION (s) 10-1 PD

t1

t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZqJC X RqJC) + TC

100

101

Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case

Test Circuit and Waveforms

FGH30N6S2D DIODE TA49390

90% VGE
L = 500H

10% EON2 EOFF

VCE
RG = 10

90%
+

ICE
VDD = 390V

10% td(OFF)I tfI trI td(ON)I

FGH30N6S2D -

Figure 26. Inductive Switching Test Circuit

Figure 27. Switching Test Waveforms

2001 Fairchild Semiconductor Corporation

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handlers body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.

Operating Frequency Information

Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/ 2. EON2 and EOFF are defined in the switching waveforms shown in Figure 27. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0)

ECCOSORBD is a Trademark of Emerson and Cumming, Inc.

2001 Fairchild Semiconductor Corporation

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
E A S Q R D TERM. 4 P

INCHES SYMBOL A b b1 b2 c D MIN 0.180 0.046 0.060 0.095 0.020 0.800 0.605 MAX 0.190 0.051 0.070 0.105 0.026 0.820 0.625

MILLIMETERS MIN 4.58 1.17 1.53 2.42 0.51 20.32 15.37 MAX 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES 2, 3 1, 2 1, 2 1, 2, 3 4 4 5 1 -

L1 L

b1 b2 c b
1 2 3 J1 3 2 1

E e e1 J1 L L1 P Q R S

0.219 TYP 0.438 BSC 0.090 0.620 0.145 0.138 0.210 0.195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270

5.56 TYP 11.12 BSC 2.29 15.75 3.69 3.51 5.34 4.96 6.61 2.66 16.25 3.93 3.65 5.58 5.20 6.85

e e1

BACK VIEW

NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93.

2001 Fairchild Semiconductor Corporation

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
A P Q H1 D E1 45o D1 TERM. 4 E A1

INCHES SYMBOL A A1 b b1 c D D1 E MIN 0.170 0.048 0.030 0.045 0.014 0.590 0.395 MAX 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 TYP 0.200 BSC 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112

MILLIMETERS MIN 4.32 1.22 0.77 1.15 0.36 14.99 10.04 MAX 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 TYP 5.08 BSC 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES 3, 4 2, 3 2, 3, 4 5 5 6 2 -

L1

b1 b c

L 60o 1 2 3

E1 e e1
J1

e e1

H1 J1 L L1 P Q

NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 2 dated 7-97.

2001 Fairchild Semiconductor Corporation

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

TO-263AB
H1

SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE

E A A1 TERM. 4

INCHES SYMBOL A A1 b MIN 0.170 0.048 0.030 0.045 0.310 0.018 0.405 0.395 MAX 0.180 0.052 0.034 0.055 0.022 0.425 0.405

MILLIMETERS MIN 4.32 1.22 0.77 1.15 7.88 0.46 10.29 10.04 MAX 4.57 1.32 0.86 1.39 0.55 10.79 10.28 NOTES 4, 5 4, 5 4, 5 2 4, 5 7 7 4, 6 3 2

L2 L1 1 3

b1 b2 c D E e e1 H1 J1 L L1 L2
0.150 (3.81)

b e e1
TERM. 4

b1
J1 0.450 (11.43)

0.100 TYP 0.200 BSC 0.045 0.095 0.175 0.090 0.050 0.315 0.055 0.105 0.195 0.110 0.070 -

2.54 TYP 5.08 BSC 1.15 2.42 4.45 2.29 1.27 8.01 1.39 2.66 4.95 2.79 1.77 -

L3

b2

0.350 (8.89) 0.700 (17.78)

L3

1 0.080 TYP (2.03) 0.062 TYP (1.58)

MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS

NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-263AB outline dated 2-92. 2. L3 and b2 dimensions established a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L1 is the terminal length for soldering. 7. Position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 10 dated 5-99.

1.5mm DIA. HOLE

4.0mm USER DIRECTION OF FEED 2.0mm 1.75mm C L

TO263AB
24mm TAPE AND REEL
24mm

16mm
COVER TAPE

40mm MIN. ACCESS HOLE 30.4mm

13mm 330mm 100mm

GENERAL INFORMATION 1. 800 PIECES PER REEL. 2. ORDER IN MULTIPLES OF FULL REELS ONLY. 3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.

24.4mm

2001 Fairchild Semiconductor Corporation

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

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LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H3