J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch

August 2012

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch

Features
This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.

J111 J112 J113

MMBFJ111 MMBFJ112 MMBFJ112_SB51338 MMBFJ113

G

S G S TO-92 D SOT-23
Mark: MMBFJ111 - 6P D MMBFJ112 - 6R NOTE: Source & Drain MMBFJ112_SB51338 - 6R are interchangeable. MMBFJ113 - 6S

Absolute Maximum Ratings* Ta = 25C unless otherwise noted

Symbol
VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range

Parameter

Value
35 -35 50 -55 to +150

Units
V V mA C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

Ta = 25C unless otherwise noted

Parameter
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max.
J111-113 625 5.0 125 357 556 *MMBFJ111-113 350 2.8

Units
mW mW/C C/W C/W

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

2012 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 1

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch

Electrical Characteristics
Symbol
Off Characteristics

Ta = 25C unless otherwise noted

Parameter

Test Condition

Min.
-35

Typ.

Max.

Units
V

BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0A, VDS = 0 IGSS VGS(off) Gate Reverse Current Gate-Source Cutoff Voltage VGS = -15V, VDS = 0 VDS = 5.0V, ID = 1.0A 111 112 MMBFJ112_SB51338 113

-1.0 -3.0 -1.0 -3.0 -0.5 -10 -5.0 -5.0 -3.0 1.0 111 112 113 111 112 113 20 5.0 2.0 30 50 100 28 5.0 5.0

nA V V V V nA mA mA mA pF pF pF

ID(off) IDSS

Drain Cutoff Leakage Current Zero-Gate Voltage Drain Current* Drain-Source On Resistance

VDS = 5.0V, VGS = -10V VDS = 15V, IGS = 0

On Characteristics

rDS(on)

VDS 0.1V, VGS = 0

Small Signal Characteristics Cdg(on) Csg(on) Cdg(off) Csg(off) Drain Gate & Source Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS = 0, VGS = 0, f = 1.0MHz VDS = 0, VGS = -10V, f = 1.0MHz VDS = 0, VGS = -10V, f = 1.0MHz

* Pulse Test: Pulse Width 300s, Duty Cycle 3.0%

Typical Performance Characteristics

Common Drain-Source
10 - DRAIN CURRENT (mA)
V GS = 0 V
- 0.2 V

Parameter Interactions
r
- TRANSCONDUCTANCE (mmhos) 100
r DS

T A = 25C TYP V GS(off) = - 2.0 V

100

DS

- DRAIN "ON" RESISTANCE ()

8
- 0.4 V

50

50

6
- 0.6 V

20

fs I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA _

20

4
- 0.8 V

2
- 1.4 V

- 1.0 V - 1.2 V

10
I DSS

10

fs

0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V)

5 _

0.5

_ _ 1 2 5 V GS (OFF) - GATE CUTOFF VOLTAGE (V)

5 10

2012 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 2

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch

Typical Performance Characteristics (continued)

Transfer Characteristics
40 - DRAIN CURRENT (mA)
VGS(off) = - 3.0 V - 55C

Transfer Characteristics
16 - DRAIN CURRENT (mA)
VGS(off) = - 1.6 V - 55C 25C 125C

V DS = 15 V

30

25C 125C VGS(off) = - 2.0 V

12

20

125C 25C - 55C

VGS(off) = - 1.1 V 125C 25C - 55C

10

V DS = 15 V

I 0 -1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V) 0 0

-0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V)

Transfer Characteristics
g fs - TRANSCONDUCTANCE (mmhos) 30 - TRANSCONDUCTANCE (mmhos)
VGS(off) = - 3.0 V - 55C 25C 125C

Transfer Characteristics
30
V GS(off) = - 1.6 V - 55C

20

VGS(off) = - 2.0 V - 55C 25C 125C

20

25C 125C

VGS(off) = - 1.1 V

10

10

- 55C 25C 125C

V DS = 15 V

V DS = 15 V

-1 -2 VGS - GATE-SOURCE VOLTAGE (V)

-3

fs

-0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V)

100
125C V GS(off) TYP = - 2.0V

r DS - NORMALIZED RESISTANCE ( )

r DS - DRAIN "ON" RESISTANCE ()

On Resistance vs Drain Current

Normalized Drain Resistance vs Bias Voltage

100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) 1
V GS(off) @ 5.0V, 10 A

50

25C 125C - 55C V GS(off) TYP = - 7.0V

r DS r DS = V GS ________ 1 V GS(off)

20

25C

r DS @ V GS = 0

- 55C

10

2 ID

5 10 20 - DRAIN CURRENT (mA)

50

100

2012 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 3

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch

Typical Performance Characteristics (continued)

g fs - TRANSCONDUCTANCE (mmhos)

100

- OUTPUT CONDUCTANCE ( mhos)

Transconductance vs Drain Current

TA = 25C V DG = 15V f = 1.0 kHz

Output Conductance vs Drain Current

100
T A = 25C f = 1.0 kHz V DG = 5.0V
10V 15V 20V 20V 5.0V 5.0V 10V 15V 10V 15V 20V

10

V GS(off) = - 5.0V

10

V GS(off) = - 1.4V

V GS(off) = - 3.0V

1
V GS(off) = - 0.85V

V GS(off) = - 2.0V

1 0.1

1 I D - DRAIN CURRENT (mA)

10

Capacitance vs Voltage
100

os

0.1 0.01

0.1 I D - DRAIN CURRENT (mA)

10

Noise Voltage vs Frequency

100 e n - NOISE VOLTAGE (nV / Hz)

C is (C rs ) - CAPACITANCE (pF)

V DG = 15V = 0.21 @ f 1.0 kHz

50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz

f = 0.1 - 1.0 MHz

10

10 5
I D = 10 mA I D = 1.0 mA

C is (V DS = 0) C is (V DS = 20) C rs (V DS = 0)

-4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V)

-20

1 0.01

1 10 f - FREQUENCY (kHz)

100

Noise Voltage vs Current

100 e n - NOISE VOLTAGE (nV / Hz)
V DG = 15V

Power Dissipation vs Ambient Temperature

P D - POWER DISSIPATION (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150

f = 10 Hz f = 100 Hz f = 1.0 kHz

TO-92 SOT-23

10

f = 10 kHz f = 100 kHz

1 0.01 I
D

0.1 1 - DRAIN CURRENT (mA)

10

2012 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 4

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch

Typical Performance Characteristics (continued)

Switching Turn-On Time vs Gate-Source Voltage

25 20 15 10 5 0
t r (ON)

Switching Turn-Off Time vs Drain Current

t d(OFF) ,t OFF - TURN-OFF TIME (ns) 100 80
VGS(off)= -2.2V - 4.0V t (off) T A = 25C V DD = 3.0V V GS = -12V t d(off) DEVICE V GS(off) INDEPENDENT

t r(ON) ,t d(ON)- TURN-ON TIME (ns)

V DD = 3.0V t r APPROX. I D INDEPENDENT VGS(off) = 3.0V T A = 25C I D = 6.6 mA 2.5 mA - 6.0V t d (ON) V GS = -12V

60 - 7.5V 40 20 0
t d(off)

0 V GS(off)

-2 -4 -6 -8 -10 - GATE-SOURCE CUTOFF VOLTAGE (V)

4 6 8 I D - DRAIN CURRENT (mA)

10

2012 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev. B0 5

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Rev. I61

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