Deploying COTS GaN and SMT Laminate Module Technology to traditional and latest phased array RADAR applications

Damian McCann, Director of Engineering MACOM - Long Beach Design Center damian.mccann@macomtech.com

MACOM Supports Multiple Advanced Radar Systems

Weather Systems (MPAR) Defense

Surveillance

Marine Radar

Air Traffic Control

with Complete RF Solutions

T/R Core Chips and Modules Phase Shifter

High Power Limiter

Attenuator

SPDT LNA Power Limiter

Switch Limiter

CMOS Drivers
Driver Amplifier Power Amp

The best technology for each RF functional component

GaAs Power Amp GaN Power Module

The GaN Opportunity

Percentage share of RF power device technology

GaN is the fastest growing segment of the $1.3B RF power transistor market GaN is expected to be approximately 25% of the overall RF power device market in 2016

Source: ABI Research

High Power RF GaN is Expected to be Adopted Across Many Market Segments

General Purpose Transistors General Purpose MMICs ISM Applications
Networks (32%) Standard Products (17%) Aerospace & Defense (51%)

Radar Satcom

SSPA
EW Jammer Avionics

LTE Macro LTE Small Cell CATV Infra. Wireless Backhaul

Expected 2016 GaN TAM = $325M

A&D GaN Use

Airborne & Shipborne RADAR Systems
Surveillance and Reconnaissance
GaNs higher power per element gives;
Longer Range & better performance in weather Lighter weight and smaller package Higher Efficiency reduces Power and Cooling needs

Missile Systems
High Power and Frequency needs Lower Cost required one time use Tough Thermal demands need higher PAE

A&D GaN Use

EW, Comms and Multifunction Systems EW Transmit
Wideband, Tube Replacments Tough Thermals due to size and CW operation

EW Receive
High RF survivable LNAs

Comms Transmit
Linearity and Efficiency at mm-Wave freqs

Comms Receive
mmW, wideband, Linearity and survivability

A&D - Comms and Multifunction Systems Trends:

Highly complex secure communication of

voice, data, video Interoperability with emergency response, police, and friendly forces Increasing bandwidth Improved receiver dynamic range to operate in RF saturated arena Functional Convergence iPhone features and economics Reduce size, weight, and power consumption
Company Confidential

The push towards High Duty/CW Operation Three major market drivers for CW GaN in A&D power modules:
New systems need to be multi-purpose with comms, EW & datalinks etc.. These systems will require higher power, linear, high duty/CW solutions New program funding will most likely be based upon upgrades to current systems with aggressive cost targets and small form factors using GaN to replace aging TWT, Silicon or GaAs based power modules Size, weight, performance and cost become critical parameters for A&D system upgrades (SWaPC .!)

Challenge for future Radar Systems

Budget cuts are placing enormous cost pressure on defense markets Greater emphasis on system upgrades of current platforms RADAR engineers are being asked to do more with less. Defense programs still require next gen radar systems to have: 1. 2. 3. 4. Performance improvements Increased functionality Faster time-to-market Total System cost reductions

SWaPc

Why is GaN a Disruptive Technology?

High Operating Temperature (Tjmax) Wide Bandgap High Potential Barrier High Frequency/BW Operation Fmax Maximum Oscillation Frequency High Saturation Velocity Low Parasitic Capacitance
150

Degs C 400 300 200 100 0

High Voltage Operation High Power Density Breakdown Field 200 Wide Bandgap
V/um

GaN
1.4 A/mm Imax

GaAs Si

Low Noise Figure Less Carrier Scatter Low RF loss Higher Efficiency

NF dB

Max Drain Current High Carrier Density High Electron Mobility Higher Power Smaller Size

Wider Bandwidth

Multi-function Capability

GaN - The Potential to Realize the Ideal Amplifier Load Line

Current New Devices with much Higher currents Higher Impedance Smaller Energy Storage Caps (1/2*CV2) For Pulsed RADAR apps Extend Present Devices to much Higher voltages Much Higher Impedance
Load = Vcc2 / (2 * Pout) Or Pout = Vcc2 / (2 * Load)

Present Device Load Line

Generally speaking Half the Impedance Transformation Ratio, Voltage Double the BW
Company Confidential

MAGX-000912-1K1000 Critical Voltage is key element.

50-65V/800mA operation, 32uS/2%, F=1.09GHz
1400 1300 1200 1100 1000 75 70 65 60 55 50 45 40 35 Pout, 65V 500 Pout, 55V 400 300 200 1 2 3 4 5 6 7 8 9 10 11 12 Eff, 65V Eff, 55V Pout, 50V Eff, 60V Eff, 50V 25 20 15 Pout, 60V 30

Pout (watts)

900 800 700 600

Pin (watts)

Drain Efficiency (%)

Realizing the Size, weight and Performance (SWaP) advantage that GaN enables
While its clear that high-voltage GaN semiconductor technology sets a new standard in power, efficiency and bandwidth performance to enable new multi-function RADAR systems. Meaningful forward progress on reducing size and weights hinges on our ability to develop and manufacture
smaller, wider bandwidth, lighter and functionally more flexible power transistors modules that promote multifunction integration.

Whats needed in all of these cases

a new approach to power transistor design and packaging technology provide greater overall power performance in a smaller form factor with the greatest possible ease of assembly

AESA T/R Module Requirements

Next Gen. AESA Radar T/R Modules Requirements 1. Size, Weight and Power 2. Higher Efficiency 3. Reliability 4. Surface-Mount Assembly 5. Faster Time-to-Market

Shrinking Form Factor for High Power

Existing L-Band and S-Band systems often use Si BJT transistors and pallets

800Wpk Single Stage Mode-S L-Band Pallet

Next generation AESA radars need smaller packaged power transistors to reduce size, weight and cost, while maintaining optimal performance and reliability

Radar photo: Lockheed Martin

High Power GaN in Space-Saving Plastic Packaging

Automatic: die placement die attach wire-bond dispense of die coat over-mold Results in True SMT assembly with MSL 1 moisture sensitivity level

90Wpk power transistor in 3 x 6 mm DFN package

Learning From other Applications Helps Guide Best Practices in Stress, Humidity and Temperature
GaN LED used in lighting and automotive applications MACOM plastic packaging approach

Thermal Measurement of 90W Device Shows Tj=113C for 80C Stage Temp
Thermal Balance approx 6degs

113 deg C junction temperature represents a very low risk for thermal reliability. Devices can operate at even higher temperatures The calculated MTTF at 200 deg C is roughly 600 years.

Solder Temperature Approx 90degs with 80 base

Pulse =1mS, Duty Cycle = 10%

Company Confidential

MAGX-000035-09000P Eval Board Thermal Data

Thermal Transient Data 1mS/10%, Pout=95W

Hottest Die Thermal Data Average temps

For transient thermal characterization, a single pixel, high-speed temperature detector is used in conjunction with the steady-state microscope.

Company Confidential

High Power GaN in Small Packages Fully matched multi-stage amplifier modules
Wide bandwidth (DC-3.5GHz) GaN Transistors

14 mm x 24 mm laminate module

Fully Matched GaN Modules

1.2-1.4 GHz MAGX-001214-090PSM 2.7-3.5 GHz MAGX-002735-085PSM 2.7-2.9 GHz MAGX-002731-090PSM 960-1215 MHz MAGX000912-090PSM

Creating a Common Amplifier Module Platform for Total System cost savings
L-Band Avionics Band S-Band

IN

GaN

OUT

VPOT VTEMP DAC -8VDC PWM

2 4 5

MABC-001000-000DPM
6

10 9 8

50VDC

Module Assembly Scalable and Repeatable

20 up, 12mil Laminate Panel RO4003C ENEPIG Plating

(LCP) molded lid

Tested KGD

All SMT assembly Final Assembly also includes a conformal coating for enhanced environmental ruggedness

MAMG-001214-090PSM 90W L-Band Matched 2-Stage

L-Band AESA Example - 3-Stage Balanced SMT 150W PA 2.1 in

Straightforward design due to modular approach. All SMT assembly Overall size is 2.1x1.5 in2. Plug-and-Play

25

But will the SMT module not get hot sitting on a Laminate board ?
Vision: Develop device compatible materials and packaging techniques
to provide localized thermal management within the packaged device Increase thermal heat spreading and reduce heat flow barriers
GaN die Cu Leadframe Overmold Dense Solid Cu Via Hole Array Thermally Enhanced Ag Epoxy Tmax=141.3 C Even More Dense Via Hole Array MODULE PCB Epoxy Attach

Tbase=88 C

MODULE PCB

Latest Sintered Ag Epoxy Tmax=128.5 C

Tbase=89 C

Actual Rise in Temperature at base of Plastic GaN device is just 17degs < 1.1deg/W at 750uS and 15%

Total System Cost Reduction enabled by COTS GaN and High Power Laminate Based TRMs
Multi-stage L-Band Laminate Based Power Module Realize S-Band Version

Putting All The Technologies Together to Realize Affordable, High Power T/R Module and Planar Array Technology
S-Band Laminate Base >90W Power Building Block S-Band Laminate Based Surface Mount TRM Commercial Plastic Packaging and PCB Technologies for SWAPC

Driving Down the Cost for Future Radar Systems by Shifting the Paradigm of Design and Manufacturing
Integrating Laminate Based LGA Surface Mount TRM

TRM - GaN enable PA section results

60 58 56 PAE (%) 54 52 50 48 46 2.7 0.5 2.8 2.9 3 3.1 3.2 3.3 Frequency (GHz) 3.4 3.5

Thick Multilayer Board

110

0.4 Pulse Droop (dB) 100 Pout (Wpk)

0.3

Negligibe Pulse Droop A true measure of the thermal capability

90

0.2

80

0.1

70 2.7 2.8 2.9 3.0 3.1 3.2 3.3 Frequency (GHz) 3.4 3.5

0 2.7 2.8 2.9 3 3.1 3.2 3.3 Frequency (GHz) 3.4 3.5

Pulse Duration 1mS/10% Duty

In Summary

High performing and innovative GaN in space saving plastic enables radar system designers to take full advantage of GaN technology and achieve new levels of power density while significantly reducing system size and weight. Using existing SMT technology capacity and best commercial practices we are also able to reduce the size, weight and affordibility of integrated Plugand-play modular power solutions. These scalable and highly manufacturable modules, when used in a True SMT assembly with additional RF SMT components, form complete TRMs in AESA RADAR systems. Leading the way towards a truly modular RF solution for future AESA RADAR and multi-function systems. The ability to offer a COTS solution using GaN combines the best of advanced military power technologies and high-volume commercial manufacturing expertise, breaks through current boundaries of SWaP, resulting in total overall system cost savings.

Thank you for your attention, any questions?