Final Exam ECE 315 Spring 2006

Open Book and two pages of notes

1. 10pts. Below is a semiconductor which has been patterned into the shape
illustrated. The thickness of the material is 1um with a mobility of 1000 cm2/V-
sec. Assume the fields transform abruptly at the interface. The doping in region 1
and region 3 is 1x1017cm-3 the doping in region 2 is 1x1016cm3
L1=10um, L2=50um, L3=20um and W1=100um, W2=10um, W3=50um

a. Calculate the total resistance of each layer.

b. What is the current in each layer if a voltage of 1V is applied to as shown
c. What is the electron drift velocity in each layer
d. If the voltage is increased and the saturation velocity is 1x107cm/sec.
What is the voltage VA where saturation velocity is achieved in the materia

L1 Contact
L2

W1
W3
V
W2
L3
Region 2 Region 1
Region 3

2. 15pts. For a MOS Capacitor biased as shown below Vtn =1V.

 a. Sketch the charge vs distance for (VA=1V and VB=0) and (VA=1V and
VB=.5V)
b. Sketch the Electic Field vs distance. for (VA=1V and VB=0) and(VA=1V
and VB=.5V)
c. Sketch the Potential vs distance. for (VA=1V and VB=0) and (VA=1V and
VB=.5V)
d. Sketch the carrier densisty (n, p) verses distance. for, (VA=1V and VB=0)
and (VA=1V and VB=.5V)
For all graphs use the scale shown below indicate the different conditions by solid
or dotted lines.

Metal n+
poly Si

Semiconductor
Oxide
(p type)

V V
F, (n, p), Φ
A
B

X
-tOx 0

Solid line is case 1 inversion

Dotted line is case 2
3. 10pts A MOS transistor has a threshold voltage (Vtn) of +1V the gate voltage is 2V
and the Drain voltage is 5V if COx=5x10-8F/cm2 and u=100 cm2/V-sec. Assume the source
and the body are connected to the ground potential. If W/L=100 and W=100um L=1um.

a. What is the value of the carrier density n (number of carriers/cm2) at the

source of the transistor for a drain voltage of 1V.
b. For a drain voltage of 1V, and 5V calculate the carrier velocity at the source.
c. For the gate voltage of 2V and if the satauration velocity of Si 1x107cm/sec
approximate the carrier density at the drain termininal

4. 10pts Consider the bipolar circuit shown below the ac voltage is (.002)sin(106ωt)V
calculate the current I required to make the voltage across the capacitor have a phase
angle of -45degrees with respect to the input ac voltage. β=100, C=10nF

5. 10pts For a standard CMOS inverter circuit as shown VDD=5Volts.

 If Vtn= -Vtp=1V, and λn=λp=.1V-1 µCOx=50uA/V2 for the NMOS transistor and
25uA/V2for the PMOS transistor. Calculate the gate length (Ln and Lp) and
W/L ratio for each device to produce a symetric transfer curve and a Noise
Margin (NMH= NML) of greater than or equal to 2.4V. Neglect channel
modulation effects

6. 15pts a. Consider the NMOS CS amplifier shown below Cgs=1pF, Cgd=1pF,

Rs=100ohms, For I=500uA, roc(current source) =500K, ro of transistor=2Meg
ohms
a. Draw the small signal diagram
b. Calculate the transistion frequency ft.(do not use Miller approx)
c. Using the Miller approximation calculate the transfer function
(Vout/Vin). What is ω3dB

RS
Vout

~
 10pts b. An additional transistor with the same equivalent circuit elements
is added to form a cascode configuration shown below. Vg2 is high enough
to bias the device in saturation.
a. Draw the small signal diagram
b. Using the Miller techniques calculate the transfer function
c. What is the ratio of ω3dB cascode/ω3db CS?

Vout
Vg2

RS

7. 10pts Plot the Bode plot both phase and magnitude for the following function

T(s)  10 5  
1  s /102
  
 1  s / .1 1  s /104 1  s /107
8. 10pts Consider the differential amplifier circuit shown below with acitve
loads. Assume Vb is above the NMOS threshold Vtn. What is the minimal
common-mode voltage that can keep the bias transistor Qb saturated? Use

VDD

Q3 Q4
vout

vcm+ Q1 Q2 vcm-

Vb
Qb

only Vb and Vth in your expression