The University of Asia Pacific

Department of Computer Science & Engineering

ECE 202
Expt. No: 01
Name of the Experiment: Study of Diode Characteristics.
Objective:
To study the I- characteristics of p-n !unction semiconductor diodes.
Theory:
" diode is a t#o termina$ de%ice that acts as an one-#ay conductor. It&s action depends on the
po$arity at #hich it is connected in circuit. 'hen the diode is connected across a %o$tage source
#ith positi%e po$arity of the source connected to p-side of the diode and negati%e po$arity to n-
side( the diode is said to )e for#ard )iased. It acts $i*e a c$osed +short circuit, s#itch and idea$$y
it offers no resistance to the current path as sho#n in fig.1+a,. If the po$arity is re%ersed ( the
diode is said to )e re%ersed )iased and it acts $i*e open s#itch and idea$$y it does not a$$o# any
current to pass through.
-o#e%er( a practica$ diode does not comp$y #ith the idea$ one. The genera$ characteristics of a
diode can )e e.pressed )y an e/uation *no#n as Shoc*$ey diode e/uation( and it is gi%en )y
I
D
0 I
S
1e.p +*
D
2T
3
,-14
'here( I
D
is the for#ard current through diode5
D
is the app$ied for#ard %o$tage5 I
S
is the
$ea*age or re%erse saturation current5 *0116002 #here is the idea$$y factor and 12 and T
3
is the a)so$ute room temperature. If the %o$tage across the diode is %aried and the current through
diode corresponding to each %o$tage are ta*en( the p$ot of current +I
D
, %s. %o$tage +
D
, #i$$ )e as
sho#n in fig.1+),.
7rom the characteristics the fo$$o#ing can )e o)ser%ed:
The right side of the cur%e +
D
80, represents the 9for#ard )iased& mode.
The $eft side of the cur%e +
D
:0, represents the 9re%ersed )iased& mode.
In 9for#ard )iased& mode( the diode current increases gradua$$y at $o# %a$ues of
D
( then
rises sharp$y after a particu$ar %a$ue of
D
. This suggests that( #e can thin* a for#ard )iased
diode as a c$osed s#itch on$y )eyond that particu$ar %o$tage. This %o$tage #hich is
represented )y the *nee portion of the cur%e is *no#n as 9cut-in& or 9thresho$d& %o$tage(
T.
;ractica$$y(

T
0

0.< +for Si,
0 0.= +for >e,
In the 9re%erse )ias portion& the diode current is a$most ?ero up to a modest range of %o$tage.
@eyond that the current increases a$most indefinite$y due to )rea*do#n. This situation is
*no#n as 9re%erse )rea*do#n of diode& and is a$#ays a%oided. The current can )e $imited
)y using resistor in diode circuit. If the s$ope +dI
D
2d
D
, is %ery steep( Aener diode can )e
used in regu$ator circuit.
7or a gi%en app$ied %o$tage diode #i$$ operate on a particu$ar point on the characteristic cur%e(
ca$$ed B point or /uiescent point.
"pp$ied dc %o$tage to a circuit containing a semiconductor diode #i$$ resu$t in an operating point
on the characteristic cur%e that #i$$ not change #ith time +sho#n in fig.2, . The resistance of the
diode at that operating point is ca$$ed static resistance( Cd

and gi%en )y(
C
d
0
D
2I
D
If ac %o$tage is app$ied( B point #i$$ change #ith the app$ied %o$tage as in fig. 2. " straight $ine
dra#n tangent to the cur%e through the B point #i$$ define a particu$ar change in %o$tage and
current that can )e used to determine the dynamic resistance( r
d
as(
r
d
0
D
2

I
D

Equipments:
+i, p-n !unction diode D1 pc. +ii, ?ener diode-1 pc. +iii, resistor +13,-1pc. +i%, dc po#er sup$y
+%, Eu$timeter.
Circuit ia!rams:
Proce"ure:
1. Eeasure resistance accurate$y using mu$timeter. Construct the circuit as sho#n in
fig.=+a,.ary input %o$tage +
DC
, and measure
D
(
C
for %a$ues of
DC
0 0.1(0.2( 0.F(
0.6( 0.<( 0.G( 1( H( 10( 1H and so on. +Iote that I
D
0
C
2 C,. 7i$$ the Ta)$e 1.
2. Construct the circuit as sho#n in fig. =+),. Cepeat step. 1 for %a$ues
DC
0 0.H(1.0(
1.H(2.0( 2.H( =.0 and so on up to the ma.imum %a$ue o)taina)$e #ithout increasing

DC
)eyond 2H.
#imu$ation:
1. Jsing ;S;ICE Te.t Editor simu$ate the I- characteristics of the diode sho#n in fig. =+a, )y
s#eeping the DC input %o$tage from DH to 1H #ith 0.01 increment. ;ro)e the p$ot for
operating temperature 0 C( 100 C & 1H0 C +use diode mode$ no. D1IK1F,.
2. Jsing ;S;ICE Te.t Editor simu$ate the ?ener region characteristics of the ?ener diode as in
fig. =+), )y s#eeping the DC %o$tage from 0 to D F0 +Jse Aener diode mode$ no.
D1I<H0,.
=. 7or the diode sho#n in fig. F simu$ate the I- characteristics using ;S;ICE Te.t Editor.
%#ubmit the report part at the &ab'
Course Io: ECE 202 E.pt. Io: 01
Cegistration Io: Semester:
Co$$ Io: Date:
(eport:
1. 'rite the %a$ue of the resistance C in fig. =+a,:
2. 7i$$ up the Ta)$e 1.
#$. No. )
C
%vo$t' )

%vo$t' )
(
%vo$t' *

+)
(
,(%mA'
=. ;$ot *-) characteristics of the diode +attach the graph,.
F. Ca$cu$ate static and dynamic resistance for I
D
0H m"( 10 m" for circuit in 7ig. =+a,.
LStatic rsistance( C
d
0 d 2 Id( at any point in the characteristics cur%e(
Dynamic resistance( r
d
0 +
D1
-
D2
,2+I
D1
-I
D2
,M
H. Determine the B-point for the circuit in 7ig. =+a, #hen
DC
01H .
+
DC
0
D
NI
D
C( this is the e/uation for $oad $ine. Ta*e t#o points from this e/uation. Connect
these t#o points to find $oad $ine. The intersection of $oad $ine and the characteristic cur%e is the
B point,
6. 'hat is the Aener o$tage of the diode of fig. =+),O
<. 'rite the ;spice te.t editor coding used in simu$ation +#i$$ )e discussed in the $a),.
G. iscussion: