ON Semiconductor

NPN

Darlington Complementary
Silicon Power Transistors

BDX33B
BDX33C*

. . . designed for general purpose and low speed switching

applications.

PNP

BDX34B
*
BDX34C

High DC Current Gain

hFE = 2500 (typ.) at IC = 4.0

CollectorEmitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min.) BDX33B, 34B
100 Vdc (min.) BDX33C, 34C
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B,
33C/34B, 34C
Monolithic Construction with BuildIn BaseEmitter Shunt resistors
TO220AB Compact Package

*ON Semiconductor Preferred Device

DARLINGTON
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80100 VOLTS
70 WATTS

MAXIMUM RATINGS

Symbol

BDX33B
BDX34B

BDX33C
BDX34C

Unit

VCEO

80

100

Vdc

CollectorBase Voltage

VCB

80

100

Vdc

EmitterBase Voltage

Rating

CollectorEmitter Voltage

VEB

5.0

Vdc

Collector Current Continuous

Peak

IC

10
15

Adc

Base Current

IB

0.25

Adc

Total Device Dissipation

@ TC = 25
C
Derate above 25
C

PD

Operating and Storage Junction

Temperature Range

TJ, Tstg

70
0.56

Watts
W/
C

65 to +150

C

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

3
CASE 221A09
TO220AB

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RJC

1.78

C/W

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 10

Publication Order Number:

BDX33B/D

BDX33B BDX33C BDX34B BDX34C

PD, POWER DISSIPATION (WATTS)

80

60

40

20

20

40

60
80
100
120
TC, CASE TEMPERATURE (C)

Figure 1. Power Derating

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140

160

BDX33B BDX33C BDX34B BDX34C

ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

80
100

80
100

80
100

0.5
10

1.0
5.0

IEBO

10

mAdc

hFE

750

VCE(sat)

2.5

Vdc

VBE(on)

2.5

Vdc

VF

4.0

Vdc

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage1

(IC = 100 mAdc, IB = 0)

CollectorEmitter Sustaining Voltage1

(IC = 100 mAdc, IB = 0, RBE = 100)

CollectorEmitter Sustaining Voltage1

(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc)
Collector Cutoff Current
(VCE = 1/2 rated VCEO, IB = 0)
Collector Cutoff Current
(VCB = rated VCBO, IE = 0)

VCEO(sus)

BDX33B/BDX34B
BDX33C/BDX34C

VCER(sus)

BDX33B/BDX34B
BDX33C/BDX33C

Vdc

VCEX(sus)

BDX33B/BDX34B
BDX33C/BDX34C

Vdc

ICEO

TC = 25
C
TC = 100
C

mAdc

ICBO

TC = 25
C
TC = 100
C

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS
DC Current Gain1
(IC = 3.0 Adc, VCE = 3.0 Vdc)

Vdc

mAdc

BDX33B, 33C/34B, 34C

CollectorEmitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc)

BDX33B, 33C/34B, 34C

BaseEmitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)

BDX33B, 33C/34B, 34C

Diode Forward Voltage

(IC = 8.0 Adc)

1 Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.

2 Pulse Test non repetitive: Pulse Width = 0.25 s.

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3

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

BDX33B BDX33C BDX34B BDX34C

1.0
0.7
0.5

D = 0.5

0.3

0.2

0.2

0.1

P(pk)

0.05

0.1
0.07
0.05

0.02
t1

0.03

0.01

0.02
0.01
0.01

0.02 0.03

SINGLE PULSE

SINGLE
PULSE

t2

DUTY CYCLE, D = t1/t2

0.05

0.1

0.2 0.3

0.5

1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)

20

30

RJC(t) = r(t) RJC

RJC = 1.92C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RJC(t)
50

100

200 300

500

1000

Figure 1. Thermal Response

IC, COLLECTOR CURRENT (AMP)

10
5.0
2.0
1.0
0.5
0.2
0.1

0.05
0.02
1.0

TC = 25C

5.0 ms
1.0 ms

500 s

20

100
s
IC, COLLECTOR CURRENT (AMP)

20

dc

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO

5.0
2.0
1.0
0.5
0.2
0.1

TC = 25C

0.02
1.0

70 100

100
s

dc

BDX33B
BDX33C
2.0 3.0
5.0 7.0
10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. ActiveRegion Safe Operating Area

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5.0 ms
1.0 ms

500 s

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO

0.05

BDX34B
BDX34C
2.0 3.0
5.0 7.0
10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

70 100

BDX33B BDX33C BDX34B BDX34C

conditions. Second breakdown pulse limits are valid for
duty cycles to 10% provided TJ(pk) = 150
C. TJ(pk) may be
calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 3 is
based on TJ(pk) = 150
C; TC is variable depending on

300
TJ = 25C

5000
3000
2000

200
C, CAPACITANCE (pF)

hFE, SMALL-SIGNAL CURRENT GAIN

10,000

1000
500
300
200

TJ = 25C
VCE = 4.0 Vdc
IC = 3.0 Adc

100
50
30
20
10

2.0

5.0

Cib

70
50

PNP
NPN
1.0

Cob

100

10
20
50 100
f, FREQUENCY (kHz)

200

30
0.1

500 1000

PNP
NPN
0.2

0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

Figure 3. SmallSignal Current Gain

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5

50

100

BDX33B BDX33C BDX34B BDX34C

NPN
BDX33B, 33C

PNP
BDX34B, 34C

20,000

TJ = 150C

5000
3000
2000

25C

1000
-
55C

5000
2000

300
200

300
200

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

25C

1000
500

0.2

TJ = 150C

3000

500

0.1

VCE = 4.0 V

10,000
hFE, DC CURRENT GAIN

10,000
hFE, DC CURRENT GAIN

20,000

VCE = 4.0 V

5.0 7.0 10

-
55C

0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

0.1

5.0 7.0 10

3.0

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. DC Current Gain

TJ = 25C
2.6
IC = 2.0 A

4.0 A

6.0 A

2.2
1.8
1.4
1.0

0.3

0.5 0.7 1.0

2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)

20

30

3.0
TJ = 25C
2.6
IC = 2.0 A

4.0 A

6.0 A

2.2
1.8
1.4
1.0

0.5 0.7 1.0

0.3

2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)

10

20

30

Figure 6. Collector Saturation Region

3.0

3.0

TJ = 25C

2.5

V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

TJ = 25C

2.0
VBE(sat) @ IC/IB = 250

1.5

VBE @ VCE = 4.0 V

1.0
0.5

VCE(sat) @ IC/IB = 250

0.1

0.2 0.3

0.5 0.7

1.0

2.0 3.0

5.0 7.0

2.5
2.0
1.5

VBE @ VCE = 4.0 V

1.0

VBE(sat) @ IC/IB = 250

0.5

10

VCE(sat) @ IC/IB = 250

0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3

0.5 0.7

1.0

2.0 3.0

IC, COLLECTOR CURRENT (AMP)

Figure 7. On Voltages

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5.0 7.0

10

BDX33B BDX33C BDX34B BDX34C

PACKAGE DIMENSIONS

TO220AB
CASE 221A09
ISSUE AA
T
B

SEATING
PLANE

F
T

Q
1 2 3

H
K
Z
L

G
D
N

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

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7

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

BDX33B BDX33C BDX34B BDX34C

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
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BDX33B/D

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