Powermos Transistor Buk200-50Y Topfet High Side Switch: Description Quick Reference Data

Philips Semiconductors Product specification
PowerMOS transistor BUK200-50Y

TOPFET high side switch
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MIN. UNIT
overload protected power switch
based on MOSFET technology in a I
L
Nominal load current (ISO) 3.5 A
5 pin plastic envelope, configured
as a single high side switch.
SYMBOL PARAMETER MAX. UNIT
APPLICATIONS
V
BG
Continuous off-state supply voltage 50 V
General controller for driving I
L
Continuous load current 10 A
lamps, motors, solenoids, heaters. T
j
Continuous junction temperature 150 C
R
ON
On-state resistance 100 m
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT263 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 Ground
2 Input
3 Battery (+ve supply)
4 Status
5 Load
Fig. 2. Fig. 3.
tab connected to pin 3
BATT
LOAD
INPUT
GROUND
STATUS
POWER
MOSFET
RG
CONTROL &
PROTECTION
CIRCUITS
1 2 3 4 5
263-01
leadform
tab
B
G
L
I
S
HSS
TOPFET
April 1995 1 Rev 1.000
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Battery voltages
V
BG
Continuous off-state supply voltage - 0 50 V
Reverse battery voltages
1
External resistors:
-V
BG
Repetitive peak supply voltage R
I
= R
S
4.7 k, 0.1 - 32 V
-V
BG
Continuous reverse supply voltage R
I
= R
S
4.7 k - 16 V
I
L
Continuous load current T
mb

115 C - 10 A
P
D
Total power dissipation T
mb

25 C - 62.5 W
T
stg
Storage temperature - -55 175 C
T
j
Continuous junction temperature
2
- - 150 C
T
sold
Lead temperature during soldering - 250 C
Input and status
I
I
Continuous input current - -5 5 mA
I
S
Continuous status current - -5 5 mA
I
I
Repetitive peak input current 0.1 -20 20 mA
I
S
Repetitive peak status current 0.1 -20 20 mA
Inductive load clamping
E
BL
Non-repetitive clamping energy T
mb
= 150 C prior to turn-off - 1.2 J
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 k
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
3
R
th j-mb
Junction to mounting base - - 1.5 2 K/W
R
th j-a
Junction to ambient in free air - 60 75 K/W
1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2 For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
3 Of the output Power MOS transistor.
April 1995 2 Rev 1.000
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise stated
Clamping voltages
V
BG
Battery to ground I
G
= 1 mA 50 55 65 V
V
BL
Battery to load I
L
= I
G
= 1 mA 50 55 65 V
-V
LG
Negative load to ground I
L
= 1 mA 12 17 21 V
Supply voltage battery to ground
V
BG
Operating range
1
- 5 - 40 V
Currents V
BG
= 13 V
I
L
Nominal load current
2
V
BL
= 0.5 V; T
mb
= 85 C 3.5 - - A
I
B
Quiescent current
3
V
IG
= 0 V; V
LG
= 0 V - 0.1 2 A
I
G
Operating current
4
V
IG
= 5 V; I
L
= 0 A 1.5 2.2 4 mA
I
L
Off-state load current
5
V
BL
= 13 V; V
IG
= 0 V - 0.1 1 A
Resistances
R
ON
On-state resistance
6
V
BG
= 13 V; I
L
= 5 A; t
p
= 300 s - 77 100 m
R
ON
On-state resistance V
BG
= 5 V; I
L
= 1 A; t
p
= 300 s - 116 150 m
R
G
Internal ground resistance I
G
= 10 mA - 150 -
INPUT CHARACTERISTICS
T
mb
= 25 C; V
BG
= 13 V
I
I
Input current V
IG
= 5 V 35 60 100 A
V
IG
Input clamping voltage I
I
= 200 A 6 7.5 8.5 V
V
IG(ON)
Input turn-on threshold voltage - 2.1 2.7 V
V
IG(OFF)
Input turn-off threshold voltage 1.5 2 - V
1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
April 1995 3 Rev 1.000
PROTECTION FUNCTIONS AND STATUS INDICATIONS
Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS TRUTH TABLE THRESHOLD
SYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT
Normal on-state 1 1 1
Normal off-state 0 1 0
I
L(OC)
Open circuit load
1
1 0 1 50 200 350 mA
Open circuit load 0 1 0
T
j(TO)
Over temperature
2
1 0 0 150 175 - C
Over temperature
3
0 0 0
V
BL(TO)
Short circuit load
4
1 0 0 8.5 10.3 12 V
Short circuit load 0 1 0
V
BG(TO)
Low supply voltage
5
X 1 0 3 4 5 V
V
BG(LP)
High supply voltage
6
X 1 0 40 45 50 V
For input 0 equals low, 1 equals high, X equals dont care.
For status 0 equals low, 1 equals open or high.
For output switch 0 equals off, 1 equals on.
STATUS CHARACTERISTICS
T
mb
= 25 C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
V
SG
Status clamping voltage I
S
= 100 A; V
IG
= 0 V 6 7 8 V
V
SG
Status low voltage I
S
= 50 A; V
BG
= 13 V; V
IG
= 5 V - 0.7 0.8 V
I
S
Status leakage current V
SG
= 5 V - 0.1 1 A
I
S
Status saturation current
7
V
SS
= 5 V; R
S
= 0 ; V
BG
= 13 V - 5 - mA
Application information
R
S
External pull-up resistor
8
V
SS
= 5 V - 100 - k
1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication
only. Typical hysteresis equals 80 mA. The thresholds are specified for supply voltage within the normal working range.
2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by
typically 10 C.
3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,
providing the device has not cooled below the reset temperature.
4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V.
6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V.
7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8 The pull-up resistor also protects the status pin during reverse battery conditions.
April 1995 4 Rev 1.000
DYNAMIC CHARACTERISTICS
T
mb
= 25 C; V
BG
= 13 V
Inductive load turn-off
-V
LG
Negative load voltage
1
V
IG
= 0 V; I
L
= 5 A; t
p
= 300 s 15 20 25 V
Short circuit load protection
2
V
IG
= 5 V; R
L
10 m
t
d sc
Response time - 90 - s
I
L
Load current prior to turn-off t < t
d sc
- 35 - A
Overload protection
3
I
L(lim)
Load current limiting V
BL
= 8.5 V; t
p
= 300 s 23 33 43 A
SWITCHING CHARACTERISTICS
T
mb
= 25 C, V
BG
= 13 V, for resistive load R
L
= 13 .
During turn-on to V
IG
= 5 V
t
d on
Delay time to 10% V
L
- 16 - s
dV/dt
on
Rate of rise of load voltage - 1 2.5 V/s
t
on
Total switching time to 90% V
L
- 40 - s
During turn-off to V
IG
= 0 V
t
d off
Delay time to 90% V
L
- 30 - s
dV/dt
off
Rate of fall of load voltage - 1.2 2.5 V/s
t
off
Total switching time to 10% V
L
- 50 - s
CAPACITANCES
T
mb
= 25 C; f = 1 MHz; V
IG
= 0 V
C
ig
Input capacitance V
BG
= 13 V - 15 20 pF
C
bl
Output capacitance V
BL
= V
BG
= 13 V - 330 460 pF
C
sg
Status capacitance V
SG
= 5 V - 11 15 pF
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V
BL(TO)
, the device remains in
current limiting until the overtemperature protection operates.
April 1995 5 Rev 1.000
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.
P
D
% = 100P
D
/P
D
(25 C) = f(T
mb
)
Fig.6. Limiting continuous on-state load current.
I
L
= f(T
mb
); conditions: V
IG
= 5 V, V
BG
= 13 V
Fig.7. Typical on-state characteristics, T
j
= 25 C.
I
L
= f(V
BL
); parameter V
BG
; t
p
= 250 s
Fig.8. Typical on-state resistance, T
j
= 25 C.
R
ON
= f(V
BG
); conditions: I
L
= 5 A; t
p
= 300 s
Fig.9. Typical on-state resistance, t
p
= 300 s.
R
ON
= f(T
j
); parameter V
BG
; condition I
L
= 1 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
L
O
A
D
VBL
0 1 2
VBL / V
IL / A BUK200-50Y
20
15
10
5
0
0.5 1.5
VBG / V = 13
5
6
7
0 20 40 60 80 100 120 140
Tmb / C
PD% Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1 10 100
VBG / V
RON / mO BUK200-50Y
150
100
50
0
0 20 40 60 80 100 120 140
Tmb / C
IL / A BUK200-50Y
15
10
5
0
-60 -20 20 60 100 140 180
Tj / C
RON / mOhm BUK200-50Y
200
150
100
50
0
VBG =
5 V
13 V
typ.
April 1995 6 Rev 1.000
Fig.10. Typical supply characteristics, 25 C.
I
G
= f(V
BG
); parameter V
IG
Fig.11. Typical operating supply current.
I
G
= f(T
j
); parameter V
BG
; condition V
IG
= 5 V
Fig.12. Typical supply quiescent current.
I
B
= f(T
j
); condition V
BG
= 13 V, V
IG
= 0 V, V
LG
= 0 V
Fig.13. Typical off-state leakage current.
I
L
= f(T
j
); conditions: V
BL
= 13 V = V
BG
; V
IG
= 0 V.
Fig.14. Typical input characteristics, T
j
= 25 C.
I
I
= f(V
IG
); parameter V
BG
Fig.15. Typical input current, T
j
= 25 C.
I
I
= f(V
BG
); condition V
IG
= 5 V
0 20 40 60
VBG / V
IG / mA BUK200-50Y
5
4
3
2
1
0
OPERATING
QUIESCENT
CLAMPING
HIGH VOLTAGE
10 30 50
VIG = 3 V
VIG = 0 V
-60 -20 20 60 100 140 180
Tj / C
IL BUK200-50Y
100 uA
10 uA
1 uA
100 nA
10 nA
1 nA
-60 -20 20 60 100 140 180
Tj / C
IG / mA BUK200-50Y
3
2
1
0
VBG / V =
13
50
0 2 4 6 8
VIG / V
II / uA BUK200-50Y
200
150
100
50
0
VBG / V = 5
7
13
-60 -20 20 60 100 140 180
Tj / C
IB BUK200-50Y
100 uA
10 uA
1 uA
100 nA
10 nA
0 20 40
VBG / V
II / uA BUK200-50Y
100
80
60
40
20
0
10 30 50
April 1995 7 Rev 1.000
Fig.16. Typical input threshold voltages.
V
IG
= f(T
j
); conditions V
BG
= 13 V, I
L
= 50 mA
Fig.17. Typical input clamping voltage.
V
IG
= f(T
j
); conditions I
I
= 200 A, V
BG
= 13 V
Fig.18. Typical status characteristic, T
j
= 25 C.
I
S
= f(V
SG
); conditions V
IG
= V
BG
= 0 V
Fig.19. Typical status leakage current.
I
S
= f(T
j
); conditions V
SG
= 5 V, V
IG
= V
BG
= 0 V
Fig.20. Typical status low characteristic, T
j
= 25 C.
I
S
= f(V
SG
); conditions V
IG
= 5 V, V
BG
= 13 V, I
L
= 0 A
Fig.21. Typical status low voltage, V
SG
= f(T
j
).
conditions I
S
= 50 A, V
IG
= 5 V, V
BG
= 13 V, I
L
= 0 A
-60 -20 20 60 100 140 180
Tj / C
VIG / V BUK200-50Y
3.0
2.5
2.0
1.5
1.0
VIG(ON)
VIG(OFF)
-60 -20 20 60 100 140 180
Tj / C
IS BUK200-50Y
10 uA
1 uA
100 nA
10 nA
-60 -20 20 60 100 140 180
Tj / C
VIG / V BUK200-50Y
8.0
7.5
7.0
6.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VSG / V
IS / uA BUK200-50Y
500
400
300
200
100
0
0 2 4 6 8 10
VSG / V
IS / mA BUK200-50Y
20
15
10
5
0
-60 -20 20 60 100 140 180
Tj / C
VSG / V BUK200-50Y
1
0.8
0.6
0.4
0.2
0
April 1995 8 Rev 1.000
Fig.22. Typical status clamping voltage, V
SG
= f(T
j
).
parameter V
IG
; conditions I
S
= 100 A, V
BG
= 13 V
Fig.23. Low load current detection threshold.
I
L(OC)
= f(T
j
); conditions V
IG
= 5 V; V
BG
= 13 V
Fig.24. Supply typical undervoltage thresholds.
V
BG(TO)
= f(T
j
); conditions V
IG
= 3 V; I
L
= 50 mA
Fig.25. Supply typical overvoltage thresholds.
V
BG(LP)
= f(T
j
); conditions V
IG
= 5 V; I
L
= 50 mA
Fig.26. Typical battery to ground clamping voltage.
V
BG
= f(T
j
); parameter I
G
Fig.27. Typical negative load clamping characteristic.
I
L
= f(V
LG
); conditions V
IG
= 0 V, t
p
= 300 s, 25 C
-60 -20 20 60 100 140 180
Tj / C
VSG / V BUK200-50Y
8.0
7.5
7.0
6.5
5
VIG / V =
0
-60 -20 20 60 100 140 180
Tj / C
VBG(LP) / V BUK200-50Y
47
46
45
44
43
on
off
-60 -20 20 60 100 140 180
Tj / C
BUK200-50Y
500
400
300
200
100
0
IL(OC) / mA
typ.
max.
min.
-60 -20 20 60 100 140 180
Tj / C
VBG / V BUK200-50Y
65
60
55
50
10 uA
1 mA
IG =
-60 -20 20 60 100 140 180
Tj / C
VBG(TO) / V BUK200-50Y
5
4
3
2
1
0
on
off
-24 -20 -16 -12 -8 -4 0
VLG / V
IL / A BUK200-50Y
20
15
10
5
0
April 1995 9 Rev 1.000
Fig.28. Typical negative load clamping voltage.
V
LG
= f(T
j
); parameter I
L
; condition V
IG
= 0 V.
Fig.29. Typical battery to load clamping voltage.
V
BL
= f(T
j
); parameter I
L
; condition I
G
= 5 mA.
Fig.30. Typical reverse battery characteristic.
I
G
= f(V
BG
); conditions I
L
= 0 A, T
j
= 25 C
Fig.31. Typical reverse diode characteristic.
I
L
= f(V
BL
); conditions V
IG
= 0 V, T
j
= 25 C
Fig.32. Typical output capacitance. T
mb
= 25 C
C
bl
= f(V
BL
); conditions f = 1 MHz, V
IG
= 0 V
Fig.33. Typical overload characteristic, T
mb
= 25 C.
I
L
= f(V
BL
); condition V
BG
= 13 V; parameter t
p
-60 -20 20 60 100 140 180
Tj / C
VLG / V BUK200-50Y
-22
-20
-18
-16
-14
-12
-10
5 A
1 mA
IL =
tp = 300 us
-1.1 -0.9 -0.7 -0.5 -0.3 -0.1
VBL / V
IL / A BUK200-50Y
0
-5
-10
-15
-20
-60 -20 20 60 100 140 180
Tj / C
VBL / V BUK200-50Y
65
60
55
50
100 uA
1 mA
2.5 A
IL =
tp = 300 us
0 20 40
VBL / V
Cbl / pF BUK200-50Y
1000
100
10 30 50
-20 -10 0
VBG / V
IG / mA BUK200-50Y
0
-50
-100
-150
-15 -5 0 2 4 6 8 10 12 14 16 18 20
VBL / V
IL / A BUK200-50Y
50
40
30
20
10
0
tp =
300 us
VBL(TO) typ.
current limiting
i.e. before short
circuit load trip
50 us
April 1995 10 Rev 1.000
Fig.34. Typical overload current, V
BL
= 8.5 V.
I
L
= f(T
mb
); conditions V
BG
= 13 V; t
p
= 300 s
Fig.35. Typical short circuit load threshold voltage.
V
BL(TO)
= f(V
BG
); condition T
mb
= 25 C
Fig.36. Typical short circuit load threshold voltage.
V
BL(TO)
= f(T
mb
); condition V
BG
= 13 V
Fig.37. Transient thermal impedance.
Z
th

j-mb
= f(t); parameter D = t
p
/T
-60 -20 20 60 100 140 180
Tmb / C
IL(LIM) / A BUK200-50Y
45
40
35
30
25
20
15
10
5
0
-60 -20 20 60 100 140 180
Tmb / C
VBL(TO) / V BUK200-50Y
15
14
13
12
11
10
9
8
7
6
5
0 10 20 30 40
VBG / V
VBL(TO) / V BUK200-50Y
12
11
10
9
8
0
0.5
0.2
0.1
0.05
0.02
100n 10u 1m 100m 10
t / s
Zth j-mb / (K/W) BUK200-50Y
10
1
0.1
0.01
1 10m 100u 1u
D =
tp
tp
T
T
P
t
D
D =
April 1995 11 Rev 1.000
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.38. SOT263 leadform 263-01;
pin 3 connected to mounting base.
Note
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.6
2.8
3.5 max
not tinned
2.4
0.6
4.5
max
5.9
min
15.8
max
1.3
1.7
(4 x)
0.9 max
(5 x)
2.4
max
0.6
min
1 2 3 4 5
(1)
(1)
mounting
base
positional accuracy of the terminals
is controlled in this zone only.
0.5
(1)
(2)
(2) terminal dimensions in this zone
are uncontrolled.
NOTES
(4 x)
8.2
4.5
9.75
5.6
5
R

0
.
5

m
i
n
R

0
.
5

m
i
n
0.4
M
April 1995 12 Rev 1.000
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1995 13 Rev 1.000

Powermos Transistor Buk200-50Y Topfet High Side Switch: Description Quick Reference Data

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Powermos Transistor Buk200-50Y Topfet High Side Switch: Description Quick Reference Data

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Philips Semiconductors Product specification

PowerMOS transistor BUK200-50Y

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