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2V
IN
N
1
N
P
V
B
N
3
N
L
B
V
D
8
(1)
where N
1
, N
P
, and N
L
B
are the number of turns of the feedback
winding, primary winding of the yback transformer, and the
boost-inductor winding, respectively. A proper number of turns
N
3
(N
3
= 2) is chosen so that the voltage across capacitor C
1
turns on Zener diode ZD
1
(V
ZD
1
= 10 V) only at high line (180
270 V
rms
). When ZD
1
is turned on, switch Q
4
is turned on and
switch Q
3
is turned off. As a result, the gate-to-source voltage of
MOSFETQ
2
is high and Q
2
is turned on. The load current ows
through switch Q
2
and the bias current of control winding N
C
is approximately zero. Therefore, the boost inductance remains
unchanged. It should be noted that the turn-on resistance of
switch Q
2
needs to be negligible compared to the resistance
of control winding N
C
to prevent a substantial current owing
through the control winding at high line. Otherwise, the effective
boost inductance would become lower and voltage V
B
would
increase to an undesirable level. At low line, the voltage across
capacitor C
1
is lower than the turn-on voltage of ZD
1
, Q
4
is
turned off and Q
3
is turned on. As a result, the gate-to-source
voltage of MOSFET Q
2
is low and Q
2
is turned off. The entire
load current ows through the control winding. Therefore, the
boost inductance is reduced.
C. Design Considerations
The design of the yback circuit in Fig. 10 without the PFC
part is basically the same as the design of the conventional
yback circuit. Key design parameters of the PFC part of the
yback circuit in Fig. 10 are number of turns N
1
and boost
inductance L
B
. The design goal is to achieve a proper PFC
operation, i.e., the line current to meet the IEC 61000-3-2 and
JIS C 61000-3-2 class C current harmonic limits, and to limit
bulk-capacitor voltage V
B
below 400 V.
It was shown in [13] that bulk-capacitor voltage V
B
is a
function of input voltage v
IN
, ratio of inductances L
B
/L
M
,
Fig. 11. Calculated voltage V
B
versus ratio N
1
/N
P
.
ratio of number of turns N
1
/N
P
, and output voltage V
O
, i.e.,
V
B
= f(v
IN
, L
B
/L
M
, N
1
/N
P
, V
O
). (2)
The bulk-capacitor voltage increases with increasing rms
value of the line voltage, and it decreases with increasing turns
ratio N
1
/N
P
and increasing ratio L
B
/L
M
of inductances, as il-
lustrated in Figs. 11 and 12, respectively. It should be noted
that V
B
does not depend on the load current as explained
in [6].
For proper PFCoperation, in order to meet the IEC61000-3-2
and JIS C 61000-3-2 class C limits, the zero-crossing distortion
of the line current due to the tapping of the primary winding
should be optimized, and the boost inductor should be prevented
from operating in CCM.
Following the same procedure for the analysis of the bulk-
capacitor voltage as in [13], the line-current waveform and the
corresponding THD can be obtained. For example, calculated
line-current waveforms at three different turns ratios N
1
/N
P
,
at nominal low line (V
IN
= 120 V
rms
) are shown in Fig. 13. It
follows from Fig. 13 that with increasing turns ratio N
1
/N
P
the
dead-angle of the line current around zero crossing increases,
resulting in an increased THD. As another example, Fig. 14
1584 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27, NO. 3, MARCH 2012
Fig. 12. Calculated voltage V
B
versus ratio L
B
/L
M
.
Fig. 13. Calculated line-current waveforms for different ratios N
1
/N
P
.
Fig. 14. Calculated THD versus ratio N
1
/N
P
at V
IN
= 230 V
rms
.
shows calculated THD versus N
1
/N
P
for three different values
of L
B
, at nominal high line (V
IN
= 230 V
rms
). It follows from
Fig. 14 that THD signicantly increases with increasing ratio
N
1
/N
P
, whereas the presented variation of L
B
does not have
signicant effect on THD. It can be seen in Fig. 14 that for a
Fig. 15. Desired range for ratio L
B
/L
M
versus ratio N
1
/N
P
: (a) in low
line-voltage range; (b) in high line-voltage range.
THDlower than 20%, which is a typical requirement for lighting
applications, turns ratio N
1
/N
P
should be smaller than 0.15.
In order to ensure DCM operation of boost inductor L
B
,
the time to completely reset the boost-inductor core should be
shorter than the turn-off time of switch Q
1
around the peak of
the line voltage (worst case), i.e.,
T
RES LB
T
OFF Q1
. (3)
In this way, the current owing through the boost inductor
decreases to zero before switch Q
1
is turned on, ensuring a high
power factor and a low THD.
The time to completely reset the boost-inductor core and the
turn-off time of switch Q
1
operating at DCM/CCM boundary
can be, respectively, expressed as
T
RES LB
=
(v
rec
IN
N
1
V
B
/N
P
)N
P
V
O
/N
S
[V
B
+ (1 N
1
/N
P
)N
P
V
O
/N
S
v
rec
IN
](V
B
+N
P
V
O
/N
S
)
T
S
(4)
and
T
OFF Q1
=
1
V
O
N
P
/N
S
V
B
+V
O
N
P
/N
S
T
S
(5)
where T
S
is the switching period of switch Q
1
and v
rec
IN
is the
instantaneous rectied line voltage.
HU et al.: SINGLE-STAGE, UNIVERSAL-INPUT AC/DC LED DRIVER WITH CURRENT-CONTROLLED VARIABLE PFC BOOST INDUCTOR 1585
Fig. 16. Proposed variable boost inductor.
Using (2)(5), the maximum ratio L
B
/L
M
versus N
1
/N
P
that will ensure DCM operation of L
B
can be obtained. In
Fig. 15(a), the calculated maximumratio L
B
/L
M
versus N
1
/N
P
that ensures DCM operation of L
B
is presented at nominal low
line (120 V
rms
). Fig. 15(a) also includes the calculated minimum
L
B
/L
M
versus N
1
/N
P
that ensures limiting the bulk-capacitor
voltage below 400 V at the upper end of the low line-voltage
range (i.e., 140 V
rms
).
The calculated maximumand minimumratios L
B
/L
M
versus
N
1
/N
P
in the high line-voltage range are presented in Fig. 15(b).
As follows from Fig. 15(b), in the high line-voltage range, the
possible range of ratio L
B
/L
M
is much narrower than in the
low line-voltage range. It also follows from Fig. 15(b) that the
minimum possible turns ratio N
1
/N
P
is 0.1.
It can be clearly seen fromFig. 15 that different ratios L
B
/L
M
are required in the low line-voltage range and in the high line-
voltage range, i.e., that a variable boost inductance is required
in the universal line-voltage range.
Based on the calculated results presented in Figs. 1114, turns
ratio N
1
/N
P
= 0.13 (N
1
=4, N
P
=30) is selected for the nal
design. It follows from Fig. 15(b) that for N
1
/N
P
= 0.13 in the
high line-voltage range, ratio L
B
/L
M
should be around 0.6,
i.e., the desired boost inductance is 390 H for the selected
L
M
= 645 H.
Finally, it follows from Fig. 15(a) that for N
1
/N
P
= 0.13 in
the low line-voltage range, ratio L
B
/L
M
should be smaller than
0.32, i.e., the desired boost inductance should be smaller than
206H for the selected L
M
= 645 H.
IV. EXPERIMENTAL RESULTS
To verify the proposed variable boost-inductance technique,
a 24-V/91-W single-stage PFC yback prototype for HB LED
applications was built. The control circuit is based on the quasi-
resonant controller NCP1207 from On Semiconductor. Fig. 16
Fig. 17. Measured boost inductance versus dc-bias current.
Fig. 18. Measured voltage v
Cc
[50 mV/div] across capacitor C
C
and mea-
sured current i
C
[2 A/div] through control winding at nominal low line (120
V
rms
) and full load (I
O
= 3.8 A). Two bottom traces obtained by zooming in
around peak value of current i
C
.
shows a photograph of the proposed current-controlled variable
boost inductor, while Fig. 17 shows the measured inductance
versus dc-bias current. As shown in Fig. 17, the effective induc-
tance drops faster with increasing dc-bias current when the turns
number N
C
of the control winding is higher, and therefore, it
requires a lower dc-bias current. However, a higher turns num-
ber N
C
leads to a higher resistance, hence, higher winding loss
at the same load current. Moreover, a lower boost inductance
generally results in a lower overall efciency of the LED driver.
Therefore, turns number N
C
should be minimized to ensure
low-enough boost inductance and DCM operation at low line
while maintaining relatively high efciency. A turns number
N
C
= 12 was selected for the nal design. The dc resistance
of winding N
C
is 20 m, while the turn-ON resistance of bias
switch Q
2
is 1.8 m (<<20 m). At low line, switch Q
2
is
turned off, and the entire load current I
O
= 3.8 Aows through
the control winding resulting in a power loss of 0.29 W, i.e.,
a 0.3% decrease of efciency. At high line, bias switch Q
2
is
turned on and control winding N
C
is essentially shorted since
1586 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27, NO. 3, MARCH 2012
Fig. 19. Measured line-current (500 mA/div) and line-voltage (100 V/div)
waveforms: (a) V
IN
= 120 V
rms
; (b) V
IN
= 230 V
rms
.
its dc resistance is much higher than the turn-ON resistance of
switch Q
2
, resulting in a power loss of 22 mW at I
O
= 3.8 A.
The measured voltage across capacitor C
C
and the mea-
sured current through the control winding at nominal low line
(120 V
rms
) and full load (I
O
= 3.8 A) are shown in Fig. 18.
In the worst case (maximum ripple current), the peak-to-peak
value of capacitor C
C
voltage is around 100 mV (neglecting the
high-frequency noise), whereas the peak-to-peak value of the
ac ripple current is 3.4 A. Without the external inductor L
C
, the
peak-to-peak value of the ac ripple current increases to 7 A.
The measured line-voltage and line-current waveforms at full
load are shown in Fig. 19. At nominal low line (120 V
rms
),
THD = 15%, PF = 0.985, V
B
= 171 V, and efciency = 88%;
while at nominal high line (230 V
rms
), THD = 10.39%, PF
= 0.947, V
B
= 327 V, and efciency = 91% were obtained.
It should be noted that THD = 15% measured at 120 V
rms
is
Fig. 20. Measured line-current harmonics at (a) V
IN
= 120 V
rms
; (b) V
IN
=
230 V
rms
.
in good agreement with the calculated value (13.1%) shown in
Fig. 13. It should be also noted that THD = 10.39% measured
at 230 V
rms
is in good agreement with the calculated value
(10%) shown in Fig. 14 at N
1
/N
P
= 0.1 and L
B
= 400 H.
Measured line-current harmonics at full load are shown in
Fig. 20. It can be seen that the line-current harmonics are below
the IEC 61000-3-2 and JIS C 61000-3-2 class C limits with
enough margin. The measured efciency versus output power
is shown in Fig. 21. It should be noted that the measured ef-
ciency at full load is well above 85%, which is the typical
requirement at full load. The maximum bulk-capacitor voltage,
obtained at V
IN
= 270 V
rms
, is V
B max
= 398 V, which is in
good agreement with the calculated value shown in Fig. 12 at
L
B
/L
M
= 0.6.
Measurements with an actual LED load were also performed.
Four LED strings each with 7 series-connected white LEDs
(Philips Lumileds, LXHL-LW3 C) were paralleled and directly
driven by the proposed PFC yback prototype with an output
voltage of 24 V. The measured waveform of the LED current at
nominal low line (120 V
rms
) and full load is shown in Fig. 22.
The peak-to-peak value of the ac ripple current is 4.6% of the
full load current (3.8 A). At nominal high line (230 V
rms
), the
measured peak-to-peak ac ripple current is 2.8% of the full load
current.
HU et al.: SINGLE-STAGE, UNIVERSAL-INPUT AC/DC LED DRIVER WITH CURRENT-CONTROLLED VARIABLE PFC BOOST INDUCTOR 1587
Fig. 21. Measured efciency versus output power.
Fig. 22. Measured waveform of LED current at nominal low line (120 V
rms
)
and full load. Top trace: I
O
[1 A/div, 2 ms/div]; bottom trace: I
O RIPPLE
[50 mA/div, 10 s/div].
V. SUMMARY
A single-stage PFC yback with a variable boost inductance
for HB LED applications for the universal input voltage is pre-
sented in this paper. The boost inductance has a constant high
value at high line, while at low line it is reduced proportionally
to the load current. Experimental results obtained on a 24-V/91-
W prototype show that the proposed PFC converter achieves an
efciency of 88%, a power factor of 0.985 and a THD of 15%
at nominal low line (120 V
rms
), and an efciency of 91%, a
power factor of 0.947 and a THD of 10.39% at nominal high
line (230 V
rms
). Line-current harmonics satisfy the IEC 61000-
3-2 and corresponding Japanese JIS C 61000-3-2 class C limits
with enough margin. The maximum bulk-capacitor voltage is
slightly less than 400 V.
Therefore, the proposed PFC yback circuit is suitable for
directly driving LED strings, and no post-regulators are nec-
essary, which is a signicant advantage over the conventional
PFC yback circuit without an energy-storage capacitor at the
primary side.
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Yuequan Hu received the Bachelors and Masters
degrees in mechanical engineering, and the Ph.D. de-
gree in electrical engineering from the University of
Science and Technology of China, Hefei, China, in
1989, 1992, and 1999, respectively.
From May 2003 to Oct. 2010, he was an R&D
member of the Power Electronics Laboratory, Delta
Products Corporation. Since November 2010, he has
been a Senior Design Engineer at Cree Inc., a market-
leading innovator and manufacturer of lighting-class
LEDs, indoor and outdoor lighting, and semiconduc-
tor solutions for wireless and power applications. His main research interests
focus on high-intensity discharge (HID) lamp ballasts and advanced LED light-
ing solutions.
1588 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27, NO. 3, MARCH 2012
Laszlo Huber (M86) was born in Novi Sad, Yu-
goslavia, in 1953. He received the Dipl. Eng. de-
gree from the University of Novi Sad, Novi Sad, in
1977, the M.S. degree from the University of Ni s,
Ni s, Yugoslavia, in 1977, and the Ph.D. degree from
the University of Novi Sad in 1992, all in electrical
engineering.
From 1977 to 1992, he was an Instructor at the In-
stitute for Power and Electronics, University of Novi
Sad. In 1992, he joined the Virginia Power Electron-
ics Center, Virginia Tech, Blacksburg, as a Visiting
Professor. From1993 to 1994, he was a Research Scientist at the Virginia Power
Electronics Center. Since 1994, he has been a Senior Member of the R&D Staff,
Power Electronics Laboratory, Delta Products Corporation, Research Triangle
Park, NC, the Advanced R&D unit of Delta Electronics, Inc., Taiwan, one of
the worlds largest manufacturers of power supplies. His 33-year experience
includes the analysis, simulation, and design of high-frequency, high-power-
density, single-phase and three-phase power processors; modeling, simulation,
evaluation, and application of high-power semiconductor devices; and model-
ing, simulation, analysis, and design of analog and digital electronics circuits.
He has authored or coauthored 80 technical papers. He holds ve U.S. patents.
Dr. Huber is the recipient of the IEEE Power Electronics Society (PELS)
Transactions Prize Paper Award for the best paper published in 2009 and the
Yugoslav Conference on Electronics, Telecommunication, Automation, and Nu-
clear Technique (ETAN) Best Paper Award in 1990.
Milan M. Jovanovi c (S85M88SM89F01)
was born in Belgrade, Serbia. He received the Dipl.
Ing. degree in electrical engineering fromthe Univer-
sity of Belgrade, Belgrade.
He is currently the Chief Technology Ofcer of the
Power Systems Business Group, Delta Electronics,
Inc., Taiwan, one of the worlds largest manufactur-
ers of power supplies, and Vice President for R&D of
Delta Products Corporation, Research Triangle Park,
NC.