3 2 1 Fundamental Mechanisms of Planar EBG Structures For PISI Applications

F d t l M h i Fundamental Mechanisms
f of
Pl EBG St t PlanarEBGStructures
f PI/SI A li ti for PI/SIApplications
LeoRaimondo,FrancescodePaulis,AntonioOrlandi
March2009
Goal
1. Understanding thefundamental
mechanisms that governs theEBGs
behaviour (Power Integrity)
2 Understanding the fundamental 2. Understanding thefundamental
mechanisms of thecoupling
between signals lines and EBG between signal slines andEBG
(Signal Integrity)
2 EBG Fundamental Mechanisms
All simulations have been performed by CSTStudioSuite2008/09
Outline
1. Introduction to Electromagnetic BandGapStructures (EBGs)
2 Specific Planar EBG Structures 2. Specific PlanarEBGStructures
3. EBGs Characterization for Power Integrity Analysis
3.1Impactof Port Position
3.2EBGFrequency Regions
4. EBGsCharacterizationforSignalIntegrityAnalysis
4 1 Analysis of Microstrip Line Position 4.1AnalysisofMicrostrip LinePosition
4.2TestWithoutBridges
4.3DifferentialMicrostrip Line
5. IRDropandStaticThermalAnalysis
6. DesignGuidelines
1. Introduction to Electromagnetic
BandGapStructures
What is an EBGSurface?
Metallization of periodic patches!!
Thebasicideatomimicthebehaviorofphotonicbandgapstructures.
D. Sievenpiper, High-impedance electromagnetic surfaces, Ph.D. dissertation,
Dept. Elect. Eng., Univ. California at Los Angeles, Los p g , g ,
Angeles, CA, 1999.
EBGs CanTakeVarious Shapes
3DMUSHROOMTYPE
2DPLANAR
Interpretation andAnalysis
=
1
2
res
f
LC
Surfacewavepropagation
TM waves at low Freq
Resonancecomesfromlumped
behavior of vias and patches TMwavesatlowFreq.
Nopropagationaroundf
res
TEwavesathighFreq.
behaviorofviasandpatches
Periodmustbemuchsmallerthan
wavelength
Interpretation andAnalysis
2
1
LC
j L
Z
LC
( )
1 2
1
2
res
f
L C C
=
+
EBGas an EMWave Suppressor
2 Specific Planar EBG Structures 2. SpecificPlanarEBGStructures
Overview
In this Section are introduced InthisSectionareintroduced
theequivalentcircuitandtheformulasfor
quantifyingthecircuitparametersofaplanarEBG
structure;
Thedispersiondiagramasatoolforinvestigating
thebehaviorofaplanarEBG. e be a o o a p a a G
APlanarEBGStructure
w = bridges width
g
b
d
a
Schematic andEquivalent Circuit
Ki Hyuk Kim Jos E Schutt Ain Analysis and Modeling of Hybrid Planar Type Electromagnetic Bandgap Structures and Feasibility Study on Ki Hyuk Kim,JosE.SchuttAin, Analysis andModeling of Hybrid PlanarType ElectromagneticBandgap Structures andFeasibility Study on
Power Distribution NetworkApplications,IEEETransaction onMicrowave Theory andTechniques,vol.56,no.1,January 2008
Formulas
L d

Startingfrequencyofthe
bandgap
0
2
0
Low
1
f
p
r
p
L d
b
C
d

=
=

( )
( )
Low
0 1
8
0
1
cosh
f ; 3 10 m/s
p
p p bridge
r
gap
d
C L L
b
a
C
c
g c

+

+

=

= =

High 0
7
1 1
f ; 3 10 m/s
2
ln 2 ; 2 10 H/m
r
bridge
g c
b
d
L k g k
w

= =

= =

Ending frequency of the
w

Ki Hyuk Kim Jos E Schutt Ain Analysis and Modeling of Hybrid Planar Type Electromagnetic Bandgap Structures and Feasibility Study on
Endingfrequencyofthe
bandgap
Ki Hyuk Kim,JosE.SchuttAin, Analysis andModeling of Hybrid PlanarType ElectromagneticBandgap Structures andFeasibility Study on
Power Distribution NetworkApplications,IEEETransaction onMicrowave Theory andTechniques,vol.56,no.1,January 2008
Formulas f
Low
( )
= =
+
Low
2
1 1
f
b g d C L L
( )

+
+ +
2
1 1
2
1.8379 2
ln(2 ) ln( )
p p bridge
b g d C L L
k b k g
c d w
f
Low
dependsonalmostallgeometricparametersoftheboard.
d
1 1
k
= = If then ln( ) 0
d
d w
w

=
=
=

=
+ +
2
Low
3 1
2 3 1
1 1
f = with
2
2
d w
k
k k
g g
b k k b k
d d d d
Formulas f
High
=
Low
1
limf lim =
c
c = propagation speed in the
di l t i

= +
Low
0 0
1
limf lim
2
g g
d d
d w
b
g
b k
d
0 no more EBG patterned plane g

g
dielectric
0nomoreEBGpatternedplane
0
thereisnomorecavity
g
g
d d

=
=
+
Low
1
1
limf lim =0
2
g g
d d
d w
g
b k +
1
2 d w b k
d
itexistsonlyONEpatch
h di l i i hi
g
g
d
0thedielectricisverythin d d
Formulas f
High

= =

0 0
f = f
c c m

=
= =

01
High
1
f =f
2 2
TM
r r
m
b
b
f
High
isthefrequencyofthelowerresonantmodeofthevirtual
cavitygivenbythesinglepatch&thecontinuousplane underneath
it.
f
High
dependsonlyonthedimensionofthepatch
Unit Cell PatchDimensions
Threereference configurations are
considered.
Themodel of the
elementary patch (or cell) is
considered.
They arenamed:
3 2
elementary patch(orcell)is
always thesame
3x2
3x4
3x2L
b
3x2L
Config. b
1
dimension
b
2
dimension
a
1
dimension
a
2
dimension
b
2 a
2
3x2 13.7mm 13.7mm 15mm 15mm
3x4 9.95mm 8.7mm 11.25mm 10mm
3x2L 17.9mm 18mm 19.2mm 19.3mm
Unit Cell BridgeDimensions
Thebridge
d
Zoomin
W
bridge
dimensionsare
alwaysthesamefor
all the three
Zoom in
L
bridge
allthethree
configurations
L
bridge
dimension
W
bridge
dimension
1 3 mm 0 4 mm 1.3mm 0.4mm
Unit Cell Lateral Dimensions
r
= 4.4
tg() 0 02
FR4
Thickness
tg()=0.02
Thickness Fr4=0.4mm
Thickness PEC = 0 017 mm
PEC
PEC
Thickness PEC 0.017mm
PEC
Thickness
Thickness
Zoom in
Dispersion Diagram
What is thedispersion diagram ?
AUNIVERSITYPROFESSOR:
It represents thevalues of the
ANENGINEER:
It represents thefrequencies
propagation factor = +j (e
j
)
compatible with thestructure under
l i ( t t i l ) f
for which it exists real values
of (j is immaginary,and
th th i EM fi ld analysis (geometry,materials)for
every given frequency
is real j is imm prop
then there is EMfield
propagation)compatible with
the structure under analysis is real j is imm.prop.
is imm.j is real noprop.
thestructure underanalysis
(geometry,materials)
Dispersion Diagram
AUNIVERSITYPROFESSOR ANENGINEER
2
k
2
c
k
a
=
k

=
c
k
a
=
Real & immaginary values Only real values

Dispersion Diagram
Theoreticalcalculation
1 1
1 1
n n n
d
n n n
V V V A B
e
I C D I I
+ +
+ +

= =

1
0
0
0
d
n
d
V A B
e
C D I
+

=

( )
2
0
d
d d
A e B
AD BC A D
1
0
d
n
C D I
e
+

( )
2
0
d d
d
AD BC e e A D
C D e

= + + =
( )
h
A D
d
+
( )
cosh
2
A D
d
+
=
Dispersion Diagram BlochModes
x
min
,x
max
,y
min
,y
max
:periodic
K
e
c
t
i
o
n
z
min
=z
max
:Electric (E
t
=0)TEModes
z
min
=z
max
:Magnetic (H
t
=0)TMModes
K
Y
-
D
i
r
e
Blochsmodes
Thecompletedispersion diagram of a
periodic structure is fully given by the
dispersion diagrams along thethree
Blochs directions
Bloch sdirections
Numerical calculation by using CST
Eigenmode Solver (E!)
Dispersion Diagram for Config.3x2Original
8
Dispersion Diagram
6
7
Second band-gap region
BW=1.4GHz
4
5
q
u
e
n
c
y

(
G
H
z
)
First band-gap region
BW=2.3GHz
2
3
F
r
e
q
0
1
K
Y-Direction
X-Direction XY-Direction
Dispersion Diagram for Config.3x4
12
Dispersion Diagram
8
10
BW=1.5GHz
6
e
q
u
e
n
c
y

(
G
H
z
)
First band-gap region
BW=2.4GHz
4
F
r
e
0
2
K
K
Y-Direction
Dispersion Diagram for Config.3x2Large
6
Dispersion Diagram
4
5
BW=1GHz
3
e
q
u
e
n
c
y

(
G
H
z
)
First band-gap region BW=1.8GHz
2
F
r
e
0
1
0
K
Y-Direction
Notes
The formulas for identifying the bandgap limits (f
high
and f ) are related to the geometric parameters of and f
low
) are related to the geometric parameters of
the single patch, bridge and gap.
The dispersion diagram is able to accurately compute p g y p
the PASS and STOPband. It is less time consuming
than a frequency or time domain simulation. Suitable
than a frequency or time domain simulation. Suitable

for optimization processes
3. EBGsCharacterizationfor
PowerIntegrityAnalysis
Overview
The behavior of a planar EBG structure is presented The behavior of a planar EBG structure is presented
in this section from the power integrity point of view.
Three different EBG are introduced; they differs by
the number and the dimensions of the patches.
A validation of the numerical simulations is shown
for one of these structures (3x2 original). ( g )
Power Integrity:Propagation Pointof View
Currentsflowingthroughvias thatpassthroughpower g g p g p
planesactasantennascausingradiation.
Othervias (powerorsignal)actasantennasand
receivethesignalasnoise.
Overall Picture
Efficacy range of different switching noise suppression methods Efficacyrangeofdifferentswitchingnoisesuppressionmethods
What is theResult of Using EBGs ?
S P t
-10
0
S
21
Parameter
d
B
]
-30
-20
I
n
s
e
r
t
i
o
n

L
o
s
s

[
d
S Parameter
0 1 2 3 4 5 6
-50
-40
Frequency [GHz]
-20
-10
0
S
21
Parameter

[
d
B
]
-50
-40
-30
M
a
g
n
i
t
u
d
e

o
f

S
2
1
0 1 2 3 4 5 6
-70
-60
Frequency [GHz]
M
Simulated Structures:3x2Original
0
2
0.503
p
L d nH = =
( )
2
0
0 1
18.3
1
r
p
b
C pF
d
b
a

= =
+
( )
0 1
1
cosh 0.65
ln 2 0 48
r
gap
b
a
C pF
g
d
L k g nH

+

= =

= =

( )
1
ln 2 0.48
1
2.37
bridge
low
L k g nH
w
f GHz
= =

= =
( )
5.22
2
p p bridge
high
C L L
c
f GHz
b
+
= =
2
r
b
3x2Original:PPvsPI
-10
0

Bandgap region is
considered at 30dB,so
f =2 7GHz and f =5GHz
-20
10
X: 2.7
f
low
=2.7GHzandf
high
=5GHz.
Atlowfrequencies,the
power planes structure and
-40
-30
|
S
2
1
|

[
d
B
]
Y: -30
X: 5
Y: -30
theEBGstructure,having
thesame external
dimension,showthesame
-50
capacitivebehavior.
Resonant modes of power plane
structure shift to lower
0 1 2 3 4 5 6 7 8 9 10
-70
-60

Power Planes
PI
frequencies (violet arrow)inthe
EBGstructure.This is dueto the
additional inductance
0 1 2 3 4 5 6 7 8 9 10
Frequency [GHz]
additional inductance
introduced by gaps andbridges.
ADSModel:3x2Original
5-port network from EZpp (4 bridges + 1 external port);
4-port network from EZpp (4 bridges);
B id i d t
Term
Term1
5
1
4
3
2
4
1 2
4
1 2
Bridge inductance.
Term1
Z=50 Ohm
Num=1
L
L9
R=
L=Lb
L
L8
R=
L=Lb
S5P
SNP2
Fi l e="Si ngl ePatch_5Ports_EZpp_13p7x13p7mm.s5p"
Ref 2
S4P
SNP3
Fi l e="Si ngl ePatch_4Ports_EZp
3 Ref
S4P
SNP1
Fi l e="Si ngl ePatch_4Ports_EZpp_13p7x13p7mm.s4p"
3 Ref
VAR
VAR1
Lb=0 nH {t}
Eqn
Var
Term
Term2
L
L7
R=
L=Lb
L
L6
R=
L=Lb
L
L5
R=
L=Lb
Z=50 Ohm
Num=2
L
L11
R=
L=Lb
L
L10
R=
L=Lb
S4P
SNP4
4
1 2
3 Ref
S4P
SNP5
4
1 2
3 Ref
S5P
SNP6
5
1
4
3
Ref 2
Fi l e="Si ngl ePatch_4Ports_EZpp_13p7x13p7mm.s4p" Fi l e="Si ngl ePatch_4Ports_EZpp_13p7x13p7mm.s4p"
SNP6
Fi l e="Si ngl ePatch_5Ports_EZp
3x2Original:S
21
Comparison
0
-20
-40
Original 3x2 CST model;
-60
g
ADS & EZpp (L
bridge
= 0.2nH);
ADS & EZpp (L
bridge
= 0.4nH);
1 2 3 4 5 0 6
-80 ADS & EZpp (L
bridge
= 0.8nH);
freq, GHz
3x2Orig.:CSTvs ADS(L
bridge
=0.2nH)by FSV
IEEEStandardP1597.1
Recommended Practice for Validation of Computational Electromagnetic
Computer Modeling and Simulation
0.6
0.7
ADMc
ADMtot = 0.24992 ADMconf = 2.45000 ADMpw = 3.25459
0.2
0.25
FDMc
FDMtot = 0.43944 FDMconf = 2.77500 FDMpw = 4.10111
03
0.35
0.4
GDMc
GDMtot = 0.55146 GDMconf = 3.39000 GDMpw = 4.38115 Kadm = 1.00
Kfdm = 1.00
ComputerModeling andSimulation
0.3
0.4
0.5
n
t
o
o
d
o
o
r
0.1
0.15
e
n
t
G
o
o
d
P
o
o
r
0.15
0.2
0.25
0.3
n
t
o
o
d
o
o
r
1 2 3 4 5 6
0
0.1
0.2
E
x
c
e
l
l
e
n
V
e
r
y

G
o
G
o
o
d
F
a
i
r
P
o
o
r
V
e
r
y

P
o
1 2 3 4 5 6
0
0.05
E
x
c
e
l
l
e
V
e
r
y

G
G
o
o
d
F
a
i
r
P
o
o
r
V
e
r
y

P
o
1 2 3 4 5 6
0
0.05
0.1
E
x
c
e
l
l
e
n
V
e
r
y

G
o
G
o
o
d
F
a
i
r
P
o
o
r
V
e
r
y

P
o
1 2 3 4 5 6
Grade=4
Spread=3
Grade=4
Spread=4
Grade=5
Spread=4
3x2Original:S
21
Comparison
-10
0
-30
-20
-50
-40
|
S
2
1
|

[
d
B
]
-70
-60
r
=3
0 1 2 3 4 5 6 7 8 9 10
-90
-80

Measurements
MWS
r
tg=0.0015
d=0.508
0 1 2 3 4 5 6 7 8 9 10
Frequency [GHz]
3x2Original:CSTvs Measurement by FIT
0.35
ADMc
ADMt ot = 0 26102 ADMconf = 2 35478 ADMpw = 3 31008
0.35
FDMc
FDMt ot = 0 43043 FDMconf = 2 60150 FDMpw = 4 07858
0.35
GDMc
GDMt t 0 54767 GDM f 3 11243 GDM 4 37167 K d 1 00
0.2
0.25
0.3
ADMt ot = 0.26102 ADMconf = 2.35478 ADMpw = 3.31008
0.2
0.25
0.3
FDMt ot = 0.43043 FDMconf = 2.60150 FDMpw = 4.07858
0.2
0.25
0.3
GDMt ot = 0.54767 GDMconf = 3.11243 GDMpw = 4.37167 Kadm = 1.00
Kfdm = 1.00
0.05
0.1
0.15
x
c
e
l
l
e
n
t
e
r
y

G
o
o
d
o
o
d
a
i
r
o
o
r
e
r
y

P
o
o
r
0.05
0.1
0.15
x
c
e
l
l
e
n
t
e
r
y

G
o
o
d
o
o
d
a
i
r
o
o
r
e
r
y

P
o
o
r
0.05
0.1
0.15
x
c
e
l
l
e
n
t
e
r
y

G
o
o
d
o
o
d
a
i
r
o
o
r
e
r
y

P
o
o
r
1 2 3 4 5 6
0
E
x
V
e
GF
a
P
o
V
e
1 2 3 4 5 6
0
E
x
V
e
G
o
F
a
P
o
V
e
1 2 3 4 5 6
0
E
x
V
e
G
o
F
a
P
o
V
e
Grade=4 Grade=4 Grade=5
Spread=4 Spread=4 Spread=5
Simulated Structures:3x2Large
0
0 1 2
0.503
31 4
p
r
L d nH
b b
C pF

= =
= =
( )
1 0 1
1
,1
31.4
1
cosh 0.93
p
r
gap
C pF
d
b
a
C pF
g

= =
+

= =

( )
2 0 1
2
,2
1
cosh 0.92
r
gap
g
b
a
C pF
g

+

= =

1
ln 2 0.48
1
bridge
d
L k g nH
w

= =

( )
1
1.81
low
p p bridge
f GHz
C L L
c
= =
+
1 2
3.99
2max{ , }
high
r
c
f GHz
b b
= =
3x2Large:PPvsPI
-10
0

Bandgap region is
considered at30dB,so
f =2GHz and f =3 9GHz
30
-20
X: 2
Y: -30
f
low
=2GHzandf
high
=3.9GHz.
-40
-30
|
S
2
1
|

[
d
B
]
X: 3.9
Y: -29
thesame external
-60
-50
capacitivebehavior.
0 1 2 3 4 5 6 7 8 9 10
-80
-70

Power Planes
PI
addition of inductance
0 1 2 3 4 5 6 7 8 9 10
Frequency [GHz]
introducedby gaps andbridges.
Simulated Structures:3x4
0
0 1 2
0.503
8 43
p
r
L d nH
b b
C pF

= =
= =
( )
1 0 1
1
,1
8.43
1
cosh 0.43
p
r
gap
C pF
d
b
a
C pF
g

= =
+

= =

( )
2 0 1
2
,2
1
cosh 0.36
r
gap
g
b
a
C pF
g

+

= =

1
ln 2 0.48
1
bridge
d
L k g nH
w

= =

( )
1
3.5
low
p p bridge
f GHz
C L L
c
= =
+
1 2
7.19
2max{ , }
high
r
c
f GHz
b b
= =
3x4:PPvsPI
-10
0

Bandgap region is
considered at30dB,so
f =4 4GHz and f =8 5GHz
-30
-20
X: 4.4
Y 30
X: 8.5
Y: -30
f
low
=4.4GHzandf
high
=8.5GHz.
60
-50
-40
|
S
2
1
|

[
d
B
]
Y: -30
thesame external
-80
-70
-60
capacitivebehavior.
0 1 2 3 4 5 6 7 8 9 10
-100
-90

Power Planes
PI
0 1 2 3 4 5 6 7 8 9 10
Frequency [GHz]
introducedby gaps andbridges.
Notes
The modification of the individual patch size leads to a change in
the bandgap region. In particular: the band gap region. In particular:
f
low
becomes lower if either the patch dimensions or the
bridge inductance increase;
f
high
, instead, depends only by the patch dimensions; a larger
patch leads to a lower f
high
and viceversa.
The power integrity peaks (due to resonant modes) correspond to
signal integrity notches; whereas the S parameter of signal signal integrity notches; whereas the S
21
parameter of signal
integrity is close to 0dB in the bandgap region .
3.1Impactof Port Position

The impact of port position and cell number
on power integrity |S
21
| is investigated in this
section ;
Their influence on the |S | behavior is Their influence on the |S
21
| behavior is
highlighted focusing on the resonant
frequencies and on the depth of the bandgap
region.
Simulated Structures
Structure 01
Structure 04
r
e
0
6
Structure 02
S
t
r
u
c
t
u
r
Structure 02
Structure 03
Structure 05
t
u
r
e
0
7
S
t
r
u
c
t
PatchNumber andPort Position:ImpactonPI
-10
0
-30
-20
-50
-40
|
S
2
1
|

[
d
B
]
Th f thi
-70
-60
Thepresence of this
notch is theeffect of the
positionof port 2.
0 1 2 3 4 5 6 7 8 9 10
-90
-80

Structure 01
Structure 02
Structure 03
TheS
21
level inbandgap
region is influenced by the
number of patches
0 1 2 3 4 5 6 7 8 9 10
Frequency [GHz]
number of patches
between port 1andport 2.
Efield Distribution
Structure 02 Structure 02
-10
0
-40
-30
-20
B
]
E field at 0 99GHz (first resonant mode)
-60
-50
|
S
2
1
|

[
d
B
Efield at0.99GHz(firstresonant mode)
-90
-80
-70
Structure 01
Structure 02
Structure 03
0 1 2 3 4 5 6 7 8 9 10
Frequency [GHz]
Efield Distribution
Structure 02
E field at 3GHz Band gap region Efield at3GHz Bandgap region
-10
0
-40
-30
-20
B
]
Structure 03
Efield at3GHz Bandgap region
-60
-50
|
S
2
1
|

[
d
B
-90
-80
-70
Structure 01
Structure 02
Structure 03
0 1 2 3 4 5 6 7 8 9 10
Frequency [GHz]
Other Structures:ImpactonPI
-10
0
-30
-20
-50
-40
|
S
2
1
|

[
d
B
]
-70
-60
Structure 04
Structure 05
0 1 2 3 4 5 6 7 8 9 10
-90
-80

Structure 06
Structure 07
Structure 07 - S
31
Frequency [GHz]
Notes
The number of patches (or unit cells) between port 1 and port 2
affects the |S |level in the band gap region: more cells means affects the |S
21
|level in the bandgap region: more cells means
smaller value of |S
21
|.
Increasing the number of patches does not lead to a significant Increasing the number of patches does not lead to a significant
change in the bandgap region:
The low frequency resonances move because the total size of
the cavity is modified.
In particular, increasing the number of patches, and hence
h b d d l d h l the boards dimensions, lead to increase the plane capacity;
therefore the resonant modes become lower.
3.2EBGFrequency Regions
h h f | | In this section the spectrum of |S
21
| parameter is
investigated investigated.
Analogies and differences among frequency regions
are highlighted.
Identifying theFrequency Regions
0

Below BandGap (BBG)region:
inthis range of frequencies the
-20
-10
S
21
behavior is dominated by
entire boardsresonant
modes;
-40
-30
S
2
1
|

[
d
B
]
BG
ABG
BBG
BandGap (BG)region:inthis
range of frequencies no
propagating modes are
-60
-50
|
p p g g
possible;
Above BandGap (ABG)region:
inthis range of frequencies the
0 2 4 6 8 10
-80
-70
Frequency[GHz]

g q
S
21
behavior is dominated by
resonant modes of thevirtual
cavity singlepatch/continuous
Frequency [GHz]
y g p /
plane.
PIAnalysis:BBGRegion
0
TM
10
TM
01
E
z
field atresonance frequencies
-20
-10
0
TM
10
-40
-30
20
|

[
d
B
]
BG
ABG
BBG
10
-60
-50
|
S
2
1
0 2 4 6 8 10
-80
-70

TM
01
0 2 4 6 8 10
Frequency [GHz]
PIAnalysis:BGRegion
0
E
z
field inbandgapregion
(4GHz)
-20
-10
0
-40
-30
20
|

[
d
B
]
BG
ABG
BBG
-60
-50
|
S
2
1
0 2 4 6 8 10
-80
-70

0 2 4 6 8 10
Frequency [GHz]
PIAnalysis:ABGRegion
0
E
z
field inabove bandgapregion
(7.47GHz)
-20
-10
0
TM TM TM
-40
-30
20
|

[
d
B
]
BG
ABG
BBG
TM
11
TM
11
TM
11
TM TM TM
-60
-50
|
S
2
1
TM
11
TM
11
TM
11
0 2 4 6 8 10
-80
-70

0 2 4 6 8 10
Frequency [GHz]
Plane Resonances:LISvsHIS
Time domainHfield insidethecavity with
acontinuous plane (LIS)
Time domainHfield insidethecavity with
an EBGplane (HIS)
Notes
The spectrum of the S
21
parameter can be divided into three
regions.
Below BandGap (BBG) region: in this range of frequencies the S
21
b h i i d i t d b ti b d t d behavior is dominated by entire board resonant modes.
BandGap (BG) region: in this range of frequencies the
propagation of modes is not possible propagation of modes is not possible.
Above BandGap (ABG) region: in this range of frequencies the S
21
behavior is dominated by resonant modes of the virtual cavity
y y
single patch/continuous plane.
4. EBGsCharacterizationfor
SignalIntegrityAnalysis
Overview
In this section the behavior of an Lshaped In this section the behavior of an L shaped
microstrip line referenced to an EBG plane is
investigated.
In particular, the coupling to the cavity
underneath is highlighted focusing on the underneath is highlighted, focusing on the
resonant frequencies and on the bandgap region.
q g p g
3x2Original with Lshaped Microstrip:PIvsSI
-10
0

-20
-40
-30
|
S
2
1
|

[
d
B
]
-50
40
-70
-60
PI
SI
0 1 2 3 4 5 6 7 8 9 10
-70
Frequency [GHz]
3x2Large with Lshaped Microstrip:PIvsSI
-10
0

30
-20
-40
-30
|
S
2
1
|

[
d
B
]
-60
-50
-80
-70
PI
SI
0 1 2 3 4 5 6 7 8 9 10
-80
Frequency [GHz]
3x4with Lshaped Microstrip:PIvsSI
-10
0

-30
-20
-50
-40
|
S
2
1
|

[
d
B
]
80
-70
-60
-100
-90
-80
PI
SI
0 1 2 3 4 5 6 7 8 9 10
-100
Frequency [GHz]
Efield Analysis:Below BandGapRegion
0
3x2original
-20
-10
-40
-30
|
S
2
1
|

[
d
B
]
Th E fi ld b h i i d
-60
-50
PI
SI
TheEfield between themicrostripand
theEBGplane (onwhich themsl is
referred)couples to thecavity
0 1 2 3 4 5 6 7 8 9 10
-70
Frequency[GHz]

underneath attheresonance
frequencies:
electromagnetic energy is drawn fromthe exterior to the interior of the cavity
electromagnetic energy is drawn fromthe exterior to the interior of the cavity
the effect is a notch in the S
21
parameter.
Efield Quantification:Below BandGap
3 1 2
3x2original
4 5 6
Point E
z
(V/m) V=E
z
h(V)
1 6.5110
4
11.91
Field propagates along the
2 3.8410
4
7.03
3 1.4510
4
2.65
Fieldpropagatesalongthe
structure.
4 1.9910
4
3.64
5 5380 2.15
Inthecavity,aresonant
modeisexcited.
6 743 0.13
Efield Analysis:BandGapRegion
0
3x2original
-20
-10
-40
-30
|
S
2
1
|

[
d
B
]
TheEBG/GNDcavity has avery lowE
field in the band gap region (4 GHz in
-60
-50
PI
SI
field inthebandgapregion (4GHz in
thefigure,black curve),thus thetwo
planes behave like ashortcircuit.
0 1 2 3 4 5 6 7 8 9 10
-70
Frequency[GHz]

Themicrostripcanbe assumed
referenced ontheGNDplane,thus the
S
21
parameter (blue curve) is close to 0 S
21
parameter (blue curve)is close to 0
dB.
Efield Quantification:BandGap
3 1 2
3x2original
4 5
6
4
Point E
z
(V/m) V=E
z
h(V)
1 4 7410
4
8 67 1 4.7410 8.67
2 4.0310
4
7.37
3 2 6610
4
4 88
Fieldpropagatesperfectlyalongthestructure.
3 2.66 10 4.88
4,6 646 0.12
5 6116 1.12
Thereisnopropagationinthecavity
In the gap/bridge regions some current 5 6116 1.12
Inthegap/bridgeregionssomecurrent
flowsinthecavity,fromEBGtoGNDplane.
Efield Quantification:BandGap
3 1 2
3x2original
4 5
6 4
Point E
z
(V/m) V=E
z
h(V)
1 4 7410
4
8 67 1 4.7410 8.67
2 4.0310
4
7.37
3 2 6610
4
4 88
SmallvaluesofE
Z
andV:virtualshortcircuit
3 2.66 10 4.88
4,6 646 0.12
5 6116 1.12
Z
betweenpatternedplaneandcontinuous
onemstrip seesasreferencea
continuous plane
5 6116 1.12
continuousplane
Efield Analysis:Above BandGapRegion
0
3x2original
-20
-10
-40
-30
|
S
2
1
|

[
d
B
]
Above thebandgapregion there is
again a correspondence between the
-60
-50
PI
SI
again acorrespondence between the
S
21,PI
peaks andtheS
21,SI
notches.
This correspondence is dueto the
li b t th i t i d th
0 1 2 3 4 5 6 7 8 9 10
-70
Frequency[GHz]

coupling between themicrostripandthe
virtual cavity singlepatch/ground plane;
Frequencies of these peaks/notches are
theresonant modes of thevirtual cavity.
Efield Quantification:Above BandGap
3 1 2
3x2original
4 5 6 7
Point E
z
(V/m) V=E
z
h(V)
1 410
4
8
Field perfectly propagates along the
2 1.5910
4
3.18
3 8740 1.75
Fieldperfectlypropagatesalongthe
structure.
7 1.710
4
3.4
4,6 1355 0.27
Inthecavityaresonantmodeofthevirtual
cavitysinglepatch/groundplaneisexcited.
5 3445 0.69
SmallcurrentflowsfromEBGtoGND.
Voltage Comparison
3
1 2
4 5
6
3 1 2
4 5
6
3
1 2
4 5
6
7
4 5 6
4 5 6 4 5
6
BBG BG ABG
7
Point BBG BG ABG
3x2original
Point BBG BG ABG
1 11.91 8.67 8
2 7.03 7.37 3.18 2 7.03 7.37 3.18
3 2.65 4.88 1.75
4 3.64 0.12 0.27
5 2.15 1.12 0.69
6 0.13 0.12 0.27
7 / / 3.4
Return Currents:Whole plane vsEBG
Time domainHfield for aMSL
referenced onawhole plane (LIS)
Time domainHfield for aMSL
referenced onaEBGplane (HIS)
Notes
BBG: at the resonance frequencies the Efield between the microstrip and EBG
plane (on which msl is referenced) couples to the cavity underneath; therefore
h i h i h there is a notch in the S
21
parameter.
BG: the EBG/GND cavity has a very low level of Efield and hence of electric
potential difference (voltage): the two planes behave like a virtual short circuit: p g p
the microstrip can be assumed referenced on the GND (continuous) plane;
the S
21
parameter is close to 0dB;
moreover the return path of the current goes at the gap from the EBG to the moreover, the return path of the current goes, at the gap, from the EBG to the
GND plane.
ABG: there is again a correspondence between the S
21,PI
peaks and the S
21,SI
h Thi i d h li b h i i d h i l i notches. This is due to the coupling between the microstrip and the virtual cavity
made by a single patch and his projection on the ground plane; in fact frequencies
of these peaks/notches are the resonant modes of this virtual cavity.
4.1Analysis of MSLPosition
In this section the impact on signal integrity of In this section the impact on signal integrity of
microstrip position is investigated
The impact of the distance between microstrip
and bridges on S
21
behavior is highlighted
f i th t f i d focusing on the resonant frequencies and on
the bandgap region. the band gap region.
Analysis of MSLPosition:S
21
s=0W -10
0

-30
-20
]
s=4W
-40
-30
S
2
1

[
d
B
]
s=12W
-60
-50
On Bridge
Intermediate Position
FarFromBridges
0 1 2 3 4 5 6
-70
Frequency [GHz]

Far FromBridges
PI
s i th t t t di t b t i t i d th t b id s is thecentertocenter distance between microstripandthenearest bridge
W is thewidth of thebridge
Surface Currents
MSLonthebridge
MSLat
intermediate
position position
MSLfar
from bridge
Notes
The center to center distance s between microstrip line The centertocenter distance s between microstrip line
and bridges affects the notch depth both in below band
gap and above bandgap region; in particular, larger is gap and above band gap region; in particular, larger is
the distance deeper is the notch.
In the bandgap region the more the microstrip line is far
from the bridge, the more is the current flowing from
h l the EBG to GND plane.
4.2TestWithout Bridges
In this section the three configurations 3x2 In this section the three configurations, 3x2
original, 3x2 large and 3x4, have been studied
without bridges at all.
Results illustrates analogies and differences
b t th t ( ith d ith t between the two cases (with and without
bridges). b dges)
EBGWithout Bridges:Schematic View
With Bridge With Bridge With Bridge
Without Bridge
With t B id With t B id
Without Bridge
Without Bridge Without Bridge
PIAnalysis:3x2Original
-10
0
g

Without Bridge
-30
-20
-40
-30
|
S
2
1
|

[
d
B
]
With Bridge
-60
-50
| With Bridge
0 2 4 6 8 10
-80
-70

PI - W/O Bridge
PI - W Bridge
0 2 4 6 8 10
Frequency [GHz]
PIAnalysis:3x2Large
20
0

Without Bridge
-40
-20
-60
S
2
1
|

[
d
B
]
With Bridge
100
-80
| With Bridge
0 2 4 6 8 10
-120
-100

PI - W/O Bridge
PI - W Bridge
0 2 4 6 8 10
Frequency [GHz]
PIAnalysis:3x4
0

Without Bridge
-20
60
-40
S
2
1
|

[
d
B
]
With Bridge
-80
-60
|
With Bridge
0 2 4 6 8 10
-100

PI - W/O Bridge
PI - W Bridge
0 2 4 6 8 10
Frequency [GHz]
SIAnalysis:3x2Original
-10
0

Without Bridge
30
-20
-40
-30
S
2
1
|

[
d
B
]
With Bridge
-60
-50
|
S With Bridge
0 2 4 6 8 10
-80
-70
SI - W/O Bridge
SI - W Bridge
0 2 4 6 8 10
Frequency [GHz]
SIAnalysis:3x2Large
0
10

Without Bridge
20
-10
-30
-20
S
2
1
|

[
d
B
]
With Bridge
-50
-40
|
S With Bridge
-70
-60
SI - W/O Bridge
SI - W Bridge
0 2 4 6 8 10
70
Frequency [GHz]
SIAnalysis:3x4
-10
0

Without Bridge
-20
10
-40
-30
S
2
1
|

[
d
B
]
With Bridge
-50
40
|
S With Bridge
-70
-60
SI - W/O Bridge
SI - W Bridge
0 2 4 6 8 10
70
Frequency [GHz]
Without Bridges LowFrequency Circuit
Without bridges S
21,SI ,
in the BBG region, doesnt have the
notches due to the resonances of the entire structure when all notches due to the resonances of the entire structure when all
patches are connected by the bridges
A low frequency equivalent circuit helps in understanding the
mechanisms of microstripline return currents path
Without Bridges LowFrequency Circuit
S
21
Parameter 0<f <2.4GHz
-10
0
3x2 Original

-40
-30
-20
S
2
1
|

[
d
B
]
-70
-60
-50
|
S
SI - W/OBridge
0 2 4 6 8 10
-80
Frequency [GHz]

SI W/O Bridge
SI - W Bridge
CurrentsMagnitude
CurrentsthroughC
p
CurrentsthroughC
g
CurrentsPhase
CurrentsthroughC
p_32
CurrentsthroughC
p_41
Currents through C
41
and C
32
have OPPOSITE phase (one CurrentsthroughC
p_41
andC
p_32
haveOPPOSITEphase(one
goesfrompatchtocont.plane,theotherinoppositesense)
Notes
Without bridges S
21,SI ,
in the BBG region, doesnt have the
notches due to the resonances of the entire structure when all notches due to the resonances of the entire structure when all
patches are connected by the bridges
Its magnitude is close to 0 dB up to the end of BG region
Above the BBG region S
21,SI
is similar to the S
21,SI
of the case with
bridges because, in this frequency region, the bridges do not act
( ) anymore (too inductive)
4.3Differential MicrostripLine
h f h d ff l In this section a configuration with a differential
microstrip line is studied focusing on the microstrip line is studied, focusing on the
differences between common and differential
mode.
SingleEndvs Differential:Schematic View
Z =50 Z =60 ; Z =100 Z
0
=50
r
=4.4
h
dielectric
=0.2mm
Z
0
=60 ;Z
d
=100
r
=4.4
h
dielectric
=0.2mm
SingleEnded vs CommonMode
0
5

-10
-5
-20
-15
|
S
|

[
d
B
]
-30
-25
-40
-35
S
cc21
S
21 - SE
0 1 2 3 4 5 6 7 8 9 10
40
Freq [GHz]

Commonvs Differential:Diff/PIComparison
0
10

20
-10
-30
-20
|
S
|

[
d
B
]
-50
-40
S
-70
-60
S
cc21
S
dd21
PI
0 1 2 3 4 5 6 7 8 9 10
-70
Freq [GHz]

Notes
The S
cc21
and the S
21,SE
parameters are very similar.
There is a correspondence between power integrity peaks and
signal integrity notches also for the commonmode transfer
function (S
cc21
) of the differential microstrip line.
Th S t h d (fl t l t 0 dB) The S
dd21
parameter has a very good (flat, close to 0 dB)
behavior because it is not affected by any type of resonances
(ideally the current loop does not take into account the (ideally the current loop does not take into account the
reference EBG plane).
5 IR Drop and Static Thermal Analysis 5.IRDrop andStatic Thermal Analysis

Overview
In this section are computed:
the IRDrop for the 3x2 Original configuration is computed
by means of CST EMStudio 2008/09 y /
The static thermal distribution for 1 A of injected DC
current.
Potential Distribution with 1ACurrent Source
I = 1A
V = 9.2 mV
TemperatureDistribution:1ACurrent Source
Notes
The limiting factor in EBG design are the bridges
Their presence increase the DC voltage drop and the
temperature increase on the boards plane temperature increase on the board s plane
6 Design Guidelines 6.DesignGuidelines

DesignGuidelines:BBG Region
-20
-10
0
In this range of frequencies the S
21
behavior is dominated
by entire board resonant modes.
Resonant modes of power plane structure move to lower
-50
-40
-30
|
S
2
1
|

[
d
B
]
BBG BG ABG
Resonant modes of power plane structure move to lower
frequencies in the EBG structure with respect to the ull
plane cavity due to the additional inductance of the
bridges
0 1 2 3 4 5 6 7 8 9 10
-70
-60
Frequency[GHz]

PI
SI
bridges.
By increasing the number of patches the resonances move
to lower frequencies because the total size of the cavity is
modified modified.
At the resonance frequencies the Efield between the microstrip and EBG plane (on which
msl is referenced) couples to the cavity underneath; therefore there is a notch in the S
21
parameter parameter.
The centertocenter distance between microstrip line and bridges affects the notch depth
both in below bandgap and above bandgap region; in particular, larger is the distance
deeper is the notch
deeper is the notch.
In the without bridges case the S
21,SI
parameter doesnt have the notches due to resonant
peaks of the power integrity, thus it is very close to 0dB in the below bandgap region.
DesignGuidelines:BG Region
-20
-10
0
In this range of frequencies the propagation of modes is
not possible.
The modification of the individual patch size leads to a
-50
-40
-30
|
S
2
1
|

[
d
B
]
BBG BG ABG
The modification of the individual patch size leads to a
change in the bandgap region. In particular:
f
low
becomes lower if either the patch dimensions or
the bridge inductance increase;
0 1 2 3 4 5 6 7 8 9 10
-70
-60
Frequency[GHz]

PI
SI
the bridge inductance increase;
f
high
, instead, depends only by the patch dimensions;
a larger patch leads to a lower f
high
.
The number of unit cells between port 1 and port 2 affects the S level in the bandgap The number of unit cells between port 1 and port 2 affects the S
21
level in the band gap
region: the more the n umber of cells, lower is S
21
.
Increasing the number of patches does not lead to a significant change in bandgap region.
The S parameter of signal integrity is close to 0dB in the bandgap region The S
21
parameter of signal integrity is close to 0dB in the bandgap region.
The cavity has a very low level of Efield and so the two planes behave like a short circuit:
the microstrip can be assumed referenced on the GND plane (virtual short circuit);
the S parameter is close to 0dB;
the S
21
parameter is close to 0dB;
the return path of the current goes, at the gap, from the EBG to the GND plane.
DesignGuidelines:ABG Region
-20
-10
0
In this range of frequencies the S
21
behavior is dominated
by resonant modes of the virtual cavity single
patch/continuous plane
-50
-40
-30
|
S
2
1
|

[
d
B
]
patch/continuous plane.
There is again a correspondence between the S
21,PI
peaks
and the S
21,SI
notches. This is due to the coupling
between the microstrip and the virtual cavity made by a
BBG BG ABG
0 1 2 3 4 5 6 7 8 9 10
-70
-60
Frequency[GHz]

PI
SI
between the microstrip and the virtual cavity made by a
single patch and his projection on the ground plane; in
fact frequencies of these peaks/notches are the resonant
modes of this virtual cavity modes of this virtual cavity.
The centertocenter distance between microstrip line and bridges affects the notch depth
both in below bandgap and above bandgap region; in particular, larger is the distance
d i th t h deeper is the notch.
Above the BBG region the S
21SI
of the case without bridges is similar to the S
21
of the case
with bridges.

3 2 1 Fundamental Mechanisms of Planar EBG Structures For PISI Applications

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3 2 1 Fundamental Mechanisms of Planar EBG Structures For PISI Applications

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F d t l M h i Fundamental Mechanisms

0 no more EBG patterned plane g

Real & immaginary values Only real values

than a frequency or time domain simulation. Suitable

45 EBG Fundamental Mechanisms

3.1Impactof Port Position

78 EBG Fundamental Mechanisms

92 EBG Fundamental Mechanisms

97 EBG Fundamental Mechanisms

5 IR Drop and Static Thermal Analysis 5.IRDrop andStatic Thermal Analysis

102 EBG Fundamental Mechanisms

6 Design Guidelines 6.DesignGuidelines

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