Symbol Min Typ Max Units

600
700
BV
DSS
/TJ 0.69
V/
o
C
1
10
I
GSS
Gate-Body leakage current 100 n
V
GS(th)
Gate Threshold Voltage 3 4 4.5 V
R
DS(ON)
1.9 2.2
g
FS
7.4 S
V
SD
0.77 1 V
I
S
Maximum Body-Diode Continuous Current 4 A
I
SM
16 A
C
iss
400 511 615 pF
C
oss
40 51 65 pF
C
rss
3.5 4.4 5.3 pF
R
g
3.3 4.2 6.3
Q
g
15 18 nC
Q
gs
3 3.6 nC
Q
gd
7.6 9.1 nC
t
D(on)
20.2 30 ns
t
r
28.7 42 ns
t
D(off)
36 51 ns
t
f
27 40 ns
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=2A Forward Transconductance
Diode Forward Voltage
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
DS
=5V

I
D
=250A
V
DS
=480V, T
J
=125C
Zero Gate Voltage Drain Current
I
DSS
Zero Gate Voltage Drain Current
V
DS
=600V, V
GS
=0V
BV
DSS
ID=250A, VGS=0V
A
V
DS
=0V, V
GS
=30V
V
Drain-Source Breakdown Voltage
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-Off DelayTime
V
GS
=10V, V
DS
=300V, I
D
=4A,
R
G
=25
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Turn-On Rise Time
Reverse Transfer Capacitance
I
D
=250A, V
GS
=0V, T
J
=25C
I
D
=250A, V
GS
=0V, T
J
=150C
Gate Drain Charge
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=4A Gate Source Charge
Static Drain-Source On-Resistance V
GS
=10V, I
D
=2A
t
f
27 40 ns
t
rr
212 254
ns
Q
rr
1.6 1.9 C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=4A,dI/dt=100A/s,V
DS
=100V
Body Diode Reverse Recovery Charge
I
F
=4A,dI/dt=100A/s,V
DS
=100V
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A. The value of R
JA
is measured with the device in a still air environment with T
A
=25C.
B. The power dissipation P
D
is based on T
J(MAX)
=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=2.5A, V
DD
=150V, R
G
=25, Starting T
J
=25C
Rev.10.0: October 2013 www.aosmd.com Page 2 of 6
6N60 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 3 of 6
www.unisonic.com.tw QW-R502-117. K
ELECTRI CAL CHARACTERI STI CS (T
J
=25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=250A 600 V
Drain-Source Leakage Current I
DSS

V
DS
=600V, V
GS
=0V 10 A
V
DS
=480V, V
GS
=0V, T
J
=125C 10 A
Gate- Source Leakage Current
Forward
I
GSS

V
G=
30V, V
DS
=0V 100 nA
Reverse V
GS
=-30V, V
DS
=0V -100 nA
Breakdown Voltage Temperature Coefficient
BV
DSS
/T
J I
D
=250A, Referenced to 25C 0.53 V/C
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
V
DS
=V
GS
, I
D
=250A 2.0 4.0 V
Static Drain-Source On-State Resistance R
DS(ON)
V
GS
=10V, I
D
=3.1A 1.0 1.5
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS

V
DS
=25V, V
GS
=0V, f=1.0 MHz
770 1000 pF
Output Capacitance C
OSS
95 120 pF
Reverse Transfer Capacitance C
RSS
10 13 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
D(ON)

V
DD
=300V, I
D
=6.2A, R
G
=25
(Note 1, 2)
40 50 ns
Turn-On Rise Time t
R
70 150 ns
Turn-Off Delay Time t
D(OFF)
40 90 ns
Turn-Off Fall Time t
F
80 100 ns
Total Gate Charge Q
G

V
DS
=480V, I
D
=6.2A, V
GS
=10V
(Note 1, 2)
20 25 nC
Gate-Source Charge Q
GS
4.9 nC
Gate-Drain Charge Q
GD
9.4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage V
SD
V
GS
=0V, I
S
=6.2 A 1.4 V
Maximum Continuous Drain-Source Diode
Forward Current
I
S
6.2 A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
24.8 A
Reverse Recovery Time t
rr
V
GS
=0V, I
S
=6.2A,
dI
F
/dt =100 A/s (Note 1)
290 ns
Reverse Recovery Charge Q
RR
2.35 C
Notes: 1. Pulse Test: Pulse width 300s, Duty cycle 2%.
2. Essentially independent of operating temperature.